公开(公告)号：US20180006136A1

公开(公告)日：2018-01-04

申请号：US15709577

申请日：2017-09-20

申请人： FUJIFILM Corporation

发明人： Yoshiki MAEHARA

IPC分类号： H01L29/66 ,  H01L21/311 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L29/66742 ,  H01L21/31105 ,  H01L29/42356 ,  H01L29/78696 ,  H01L51/0558

摘要： Provided are an air up type transistor which has high electrical connection reliability and high productivity, and is capable of exhibiting good transistor characteristics while achieving microfabrication, and a manufacturing method of a transistor. A semiconductor layer is formed on an upper surface of a support precursor layer which becomes a semiconductor layer support and then a part of the semiconductor layer is removed to form one or more opening portions from which the support precursor layer is exposed. Two etching protective layers are formed on the semiconductor layer such that the two etching protective layers are separated from each other and at least a part of the opening portion is positioned in a region between the two etching protective layers. A part of the support precursor layer is removed by bringing an etchant into contact with the support precursor layer through the plurality of opening portions, thereby forming a space at a position corresponding to a region between the two etching protective layers so as to form two semiconductor layer supports that are arranged with the space interposed therebetween.

公开(公告)号：US20150364686A1

公开(公告)日：2015-12-17

申请号：US14835317

申请日：2015-08-25

申请人： FUJIFILM CORPORATION

发明人： Yoshiki MAEHARA ,  Yoshihisa USAMI

IPC分类号： H01L51/00

CPC分类号： H01L51/0026 ,  H01L51/0003 ,  H01L51/0558

摘要： A method for forming an organic semiconductor film includes: forming a solution film by applying a solution containing an organic semiconductor material and a solvent to at least a part of a substrate; and drying the solution film by irradiating at least a part of the solution film with electromagnetic waves with a wavelength of at least 8 μm and an energy density of from 0.1 to 10 J/cm2 on the surface of the solution film before the solution film dries. An organic semiconductor film having good crystallinity can be formed by the method.

摘要翻译： 形成有机半导体膜的方法包括：通过将含有有机半导体材料和溶剂的溶液施加到基板的至少一部分来形成溶液膜; 通过在溶液膜干燥之前，在溶液膜的表面上照射波长至少为8μm，能量密度为0.1〜10J / cm 2的电磁波的溶液膜的至少一部分来干燥溶液膜 。 可以通过该方法形成具有良好结晶度的有机半导体膜。

公开(公告)号：US20140182674A1

公开(公告)日：2014-07-03

申请号：US14196144

申请日：2014-03-04

申请人： FUJIFILM Corporation

发明人： Kohei HIGASHI ,  Yoshiki MAEHARA ,  Jiro TSUKAHARA ,  Yuichi TOMARU

IPC分类号： H05K1/02 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H05K1/0274 ,  G06F2203/04103 ,  H01L31/022466 ,  H01L31/022491 ,  H01L31/1884 ,  H01L51/445 ,  Y02E10/549 ,  Y02P70/521 ,  Y10T29/49155

摘要： A transparent conductive film includes: a conductive stripe formed on a plastic support by a mask deposition process, the conductive stripe including a plurality of conductive lines made of a metal or an alloy having a film thickness of not less than 50 nm and not greater than 500 nm and a line width of not less than 0.3 mm and not greater than 1 mm in plan view and being arranged at an interval of not less than 3 mm and not greater than 20 mm; and a transparent conductive material layer formed to cover the plastic support and the conductive stripe, the transparent conductive material having a specific resistance of not greater than 4×10−3 Ω·cm and a film thickness of not less than 20 ma and not greater than 500 nm.

摘要翻译： 透明导电膜包括：通过掩模沉积工艺在塑料支撑体上形成的导电条，所述导电条包括多个由金属或合金制成的导电线，所述金属或合金的膜厚度不小于50nm且不大于 500nm，线宽不小于0.3mm，平面图中不大于1mm，并以不小于3mm和不大于20mm的间隔布置; 以及形成为覆盖塑料支撑体和导电条的透明导电材料层，所述透明导电材料的电阻率不大于4×10-3＆OHgr·cm，膜厚度不小于20ma，而不是 大于500nm。

公开(公告)号：US20170155067A1

公开(公告)日：2017-06-01

申请号：US15430629

申请日：2017-02-13

申请人： FUJIFILM CORPORATION

发明人： Yoshihisa USAMI ,  Kouki TAKAHASHI ,  Yoshiki MAEHARA ,  Seigo NAKAMURA

IPC分类号： H01L51/05 ,  B23K26/351

CPC分类号： H01L51/0512 ,  B23K26/0006 ,  B23K26/066 ,  B23K26/082 ,  B23K26/351 ,  B23K26/359 ,  B23K26/364 ,  B23K26/402 ,  B23K2101/42 ,  B23K2103/50 ,  H01L51/0014 ,  H01L51/0024 ,  H01L51/0558

摘要： Disclosed are a manufacturing method capable of manufacturing a semiconductor device having a plurality of organic semiconductor elements with a simple process and high productivity, and a semiconductor device. This problem is solved by forming, on an insulating substrate, electrodes corresponding to a plurality of semiconductor elements, in which the position of an uppermost portion of each of a source electrode and a drain electrode is higher than that of a gate electrode, forming an organic semiconductor film on a surface of an insulating support, forming grooves in the organic semiconductor film to form divided regions according to the individual semiconductor elements, and aligning and laminating the insulating support and the insulating substrate.

公开(公告)号：US20130180586A1

公开(公告)日：2013-07-18

申请号：US13786027

申请日：2013-03-05

申请人： FUJIFILM Corporation

发明人： Yoshiki MAEHARA

IPC分类号： H01L31/0224

CPC分类号： H01L31/022425 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0047 ,  H01L51/4253 ,  H01L51/441 ,  Y02E10/549 ,  Y02P70/521

摘要： A solar cell 10 has a support 12, a positive electrode 20 disposed on the support, a photoelectric conversion layer 22 disposed on the positive electrode, a translucent metal negative electrode 26 which is disposed on the photoelectric conversion layer and is provided with a positive standard electrode potential, and an additional metal electrode 28 for the negative electrode, the additional metal electrode being disposed so as to be in contact with the metal negative electrode and being provided with a standard electrode potential that is less than the standard electrode potential of the metal negative electrode.

摘要翻译： 太阳能电池10具有支撑体12，设置在支撑体上的正极20，设置在正极上的光电转换层22，设置在光电转换层上的透光性金属负极26，并具有正的标准 电极电位和用于负极的附加金属电极28，附加金属电极设置成与金属负极接触并且具有小于金属的标准电极电位的标准电极电位 负极。

公开(公告)号：US20180366590A1

公开(公告)日：2018-12-20

申请号：US16114610

申请日：2018-08-28

申请人： FUJIFILM Corporation

发明人： Seigo NAKAMURA ,  Yoshiki MAEHARA ,  Yuichiro ITAI ,  Yoshihisa USAMI

IPC分类号： H01L29/786 ,  H01L51/05

摘要： Provided is a method of manufacturing a film, including: a manufacturing step of forming a film by performing movement, in a state in which a blade surface of a coating blade disposed to be spaced so as to face a substrate surface of a substrate is in contact with a solution for forming a film which is provided between the blade surface and the substrate surface, in a first direction in a plane parallel to the substrate surface, in which the solution is stored in a liquid reservoir between the blade surface and the substrate surface, and at least a portion of an outer peripheral end portion of the coating blade which is in contact with the solution is tilted with respect to the first direction in a plane parallel to the substrate surface. Accordingly, a method of manufacturing a film for forming a high quality film with high productivity is provided.

公开(公告)号：US20170179413A1

公开(公告)日：2017-06-22

申请号：US15454247

申请日：2017-03-09

申请人： FUJIFILM CORPORATION

发明人： Yoshihisa USAMI ,  Yoshiki MAEHARA ,  Takahiko ICHIKI

IPC分类号： H01L51/05 ,  H01L51/10

CPC分类号： H01L51/0529 ,  H01L21/283 ,  H01L29/417 ,  H01L29/423 ,  H01L29/42384 ,  H01L29/49 ,  H01L29/4908 ,  H01L29/7869 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： A transistor and a manufacturing method of a transistor which prevents a decrease in mobility, prevents a decrease in a withstand voltage of the insulating layer, and prevents a short circuit between a gate electrode and a semiconductor layer due to curvature. A substrate having insulating properties, a source electrode and a drain electrode disposed in a surface direction of a main surface of the substrate by being separated from each other, a gate electrode disposed between the source electrode and the drain electrode in the surface direction of the substrate, a semiconductor layer disposed in contact with the source electrode and the drain electrode, and an insulating film disposed between the gate electrode and the semiconductor layer in a direction perpendicular to the main surface of the substrate are included, and a gap region is formed between the semiconductor layer and the insulating film.

公开(公告)号：US20140239156A1

公开(公告)日：2014-08-28

申请号：US14275308

申请日：2014-05-12

申请人： FUJIFILM Corporation

发明人： Masayuki HAYASHI ,  Yoshiki MAEHARA ,  Tetsuro MITSUI

IPC分类号： H01L27/146

CPC分类号： H01L27/14605 ,  C09B57/00 ,  C09B57/008 ,  H01L27/14647 ,  H01L27/307 ,  H01L51/0059 ,  H01L51/0067 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/4246 ,  Y02E10/549

摘要： A photoelectric conversion element comprises a photoelectric conversion section that includes: a pair of electrodes; and a photoelectric conversion layer disposed between the pair of electrodes, wherein the photoelectric conversion section further comprises between one of the pair of electrodes and the photoelectric conversion layer a first charge-blocking layer that restrains injection of charges from the one of the electrodes into the photoelectric conversion layer when a voltage is applied to the pair of electrodes, and the first charge-blocking layer comprises a plurality of layers.

摘要翻译： 光电转换元件包括光电转换部分，其包括：一对电极; 以及设置在所述一对电极之间的光电转换层，其中所述光电转换部还包括所述一对电极中的一个和所述光电转换层之间的第一电荷阻挡层，所述第一电荷阻挡层抑制从所述一个电极注入电荷 当向一对电极施加电压时，光电转换层，并且第一电荷阻挡层包括多个层。

公开(公告)号：US20180331289A1

公开(公告)日：2018-11-15

申请号：US16041766

申请日：2018-07-21

申请人： FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

发明人： Seigo NAKAMURA ,  Yoshiki MAEHARA ,  Yuichiro ITAI ,  Yoshihisa USAMI ,  Junichi TAKEYA

IPC分类号： H01L51/00 ,  H01L51/10 ,  H01L51/05

CPC分类号： H01L51/0003 ,  B05C11/045 ,  H01L29/786 ,  H01L51/05 ,  H01L51/0512 ,  H01L51/105

摘要： A method of manufacturing an organic semiconductor film, including a step of moving a coating blade surface positioned to face a substrate surface in a first direction parallel to the substrate surface, while in contact with an organic semiconductor solution supplied to a portion between the blade surface and the substrate surface to form the organic semiconductor film in the first direction. The coating blade is disposed to have first and second gaps having different separation gap sizes with the substrate surface in a region where the blade surface and the organic semiconductor solution are in contact. The first gap is positioned on an upstream side of the first direction and the second gap, which is smaller than the first gap, is provided on a downstream side. A second gap size is a minimum distance between the substrate surface and the blade surface and is 40 μm or less.

公开(公告)号：US20180326447A1

公开(公告)日：2018-11-15

申请号：US16041769

申请日：2018-07-21

申请人： FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

发明人： Seigo NAKAMURA ,  Yoshiki MAEHARA ,  Yuichiro ITAI ,  Yoshihisa USAMI ,  Junichi TAKEYA

IPC分类号： B05C11/04 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10

摘要： A device for manufacturing an organic semiconductor film, including a coating member disposed to face a substrate surface while spaced therefrom for forming the film, and forming a liquid reservoir of an organic semiconductor solution between the coating member and the substrate; a supply portion that supplies the solution; and a cover portion that covers at least a crystal growth portion of the solution. The cover portion includes a guide that guides a deposit formed of an evaporated solvent of the solution to a film-unformed region of the organic semiconductor film. While the solution is supplied between the coating member and the substrate surface by the supply portion, the coating member is moved in a first direction parallel to the substrate surface in a state of being in contact with the solution, to form the film with the crystal growth portion as a starting point.