公开(公告)号：US4011060A

公开(公告)日：1977-03-08

申请号：US619110

申请日：1975-10-02

申请人： Melvin Berkenblit ,  See Ark Chan ,  Joan B. Landermann ,  Arnold Reisman ,  Takeshi Takamori

发明人： Melvin Berkenblit ,  See Ark Chan ,  Joan B. Landermann ,  Arnold Reisman ,  Takeshi Takamori

IPC分类号： C03C8/24 ,  C03B5/00

CPC分类号： C03C8/245

摘要： A process for controlling the softening point and for providing a preselected softening point of solder glass which comprises bubbling oxygen-containing gas through a homogeneous melt of a solder glass containing copper oxide at a temperature and oxygen partial pressure predetermined to provide the desired preselected softening point of the solder glass and for a time sufficient to achieve equilibrium of the reaction Cu.sub.2 O+1/2O.sub.2 .revreaction.2CuO.

公开(公告)号：US3964942A

公开(公告)日：1976-06-22

申请号：US81610

申请日：1970-10-16

申请人： Melvin Berkenblit ,  Arnold Reisman

发明人： Melvin Berkenblit ,  Arnold Reisman

IPC分类号： C30B29/00 ,  H01L21/00 ,  H01L27/00 ,  C23G1/36

CPC分类号： H01L21/00 ,  C30B29/00 ,  H01L27/00

摘要： A polishing method for single crystal dielectrics such as sapphire and magnesium spinel is disclosed. A single crystal wafer of sapphire or magnesium spinel is immersed in a mixture of sulphuric and phosphoric acid in a range of mixtures of 9 parts sulphuric acid to 1 part phosphoric acid to 1 part sulphuric acid to 9 parts phosphoric acid by volume while the mixture is held at a temperature in the range of 200.degree.-325.degree.C. The rate of polishing as well as the quality of polishing of the wafers of sapphire or magnesium spinel is orientation sensitive and polishing is achieved for magnesium spinel having the orientations (100) and (110). Polishing is achieved for sapphire having the orientations (0001), (1123), (1100), (1124), (1120) and (0112). A wafer to be polished is suspended in the heated solution and may be rotated slowly. Nonpreferential material removal rates of fractions of a micron per minute are obtained. Crystals of both sapphire and spinel having the above-mentioned orientations may be polished in a preferred temperature range of 250.degree.-300.degree.C. The preferred polishing mixture for sapphire is 1 part sulphuric acid to 1 part phosphoric acid by volume at a temperature of 285.degree.C. For magnesium spinel, the preferred mixture is 3 parts sulphuric acid to 1 part phosphoric acid at a temperature of 250.degree.C. The polishing technique of the present invention provides planar, polished surfaces which are free of insoluble residues on the polished surface.

摘要翻译： 公开了诸如蓝宝石和镁尖晶石之类的单晶电介质的抛光方法。 将蓝宝石或镁尖晶石的单晶晶片浸入硫酸和磷酸的混合物中，所述混合物在9份硫酸至1份磷酸与1份硫酸至9份磷酸溶液的混合物的范围内，同时混合物为 保持在200〜-325℃的范围内。抛光速度以及蓝宝石或镁尖晶石晶片的抛光质量是取向敏感的，并且对具有取向（100）的镁尖晶石实现抛光， 和（110）。 对于具有取向（0001），（1123），（1100），（1124），（1120）和（0112）的蓝宝石，实现抛光。 要抛光的晶片悬挂在加热的溶液中并且可以缓慢旋转。 获得每分钟微米分数的非优选材料去除速率。 具有上述取向的蓝宝石和尖晶石的晶体可以在250-300℃的优选温度范围内抛光。对于蓝宝石，优选的抛光混合物是1体积的硫酸至1份磷酸，体积温度为 对于镁尖晶石，优选的混合物是在250℃的温度下为3份硫酸至1份磷酸。本发明的抛光技术提供平面抛光表面，其在抛光后不含不溶残留物 表面。

公开(公告)号：US3961114A

公开(公告)日：1976-06-01

申请号：US495352

申请日：1974-08-07

申请人： Melvin Berkenblit ,  Robert O. Lussow ,  Arnold Reisman

发明人： Melvin Berkenblit ,  Robert O. Lussow ,  Arnold Reisman

IPC分类号： C03B19/00 ,  C03C3/072 ,  C03C3/102 ,  C03C17/02 ,  B32B9/00 ,  B44C5/08

CPC分类号： C03C3/102 ,  C03B19/00 ,  C03C17/02 ,  C03C3/072 ,  H01J2211/38

摘要： A glass composition comprises a low glass transition temperature glass and a higher glass transition temperature glass, which glasses are uniquely capable of forming together a continuous vitreous phase over their entire compositional range. During thermal cycling, the low glass transition temperature glass flows out and solubilizes the higher glass transition temperature glass to thereby synthesize in situ a new glass. The low glass transition temperature glass is composed of 14.1% SiO.sub.2, 72.8% PbO, 12.5% B.sub.2 O.sub.3, 0.2% Al.sub.2 O.sub.3, 0.1% CaO, 0.2% Na.sub.2 O, and 0.1% MgO, and the higher glass transition temperature glass is composed of 71.11% SiO.sub.2, 2.38% Al.sub.2 O.sub.3, 7.13% CaO, 14.45% Na.sub.2 O, 3.76% MgO, 0.30% of K.sub.2 O, 0.13% B.sub.2 O.sub.3, and 0.74% PbO.

摘要翻译： 玻璃组合物包含低玻璃化转变温度玻璃和较高玻璃化转变温度的玻璃，该玻璃独特地能够在其整个组成范围内形成连续玻璃相。 在热循环期间，低玻璃化转变温度玻璃流出并溶解较高的玻璃化转变温度玻璃，从而原位合成新的玻璃。 低玻璃化转变温度玻璃由14.1％SiO2，72.8％PbO，12.5％B2O3，0.2％Al2O3，0.1％CaO，0.2％Na2O和0.1％MgO组成，玻璃化转变温度较高的玻璃由71.11％ SiO 2，2.38％Al 2 O 3，7.13％CaO，14.45％Na 2 O，3.76％MgO，0.30％K 2 O，0.13％B 2 O 3和0.74％PbO。

公开(公告)号：US5201995A

公开(公告)日：1993-04-13

申请号：US852411

申请日：1992-03-16

申请人： Arnold Reisman ,  Dorota Temple

发明人： Arnold Reisman ,  Dorota Temple

IPC分类号： C23C16/04 ,  C23C16/455 ,  H01L21/20 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/768

CPC分类号： C23C16/04 ,  C23C16/455 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02642 ,  H01L21/28562 ,  H01L21/30655 ,  H01L21/76879

摘要： A novel process for the selective deposition of solid-phase materials is disclosed, which process requires only the modulation of a single auxiliary gas within a suitable reactor assembly. According to the disclosed method, selective area deposition can be obtained on any desired microelectronic substrate by the creation of a vapor-phase chemical equilibrium system capable of deposition and etching the material to be deposited. The vapor-phase system is designed around a single reversible reaction wherein the material to be deposited equilibrates between that solid phase and its vapor-phase constituent species. By modulating an auxiliary gas flow into the reactor assembly, alternating deposition and etching processes can be obtained to yield an overall process which results in net overall selective and uniform deposition.

摘要翻译： 公开了用于选择性沉积固相材料的新方法，该方法仅需要在合适的反应器组件内调节单个辅助气体。 根据所公开的方法，通过产生能够沉积和蚀刻待沉积材料的气相化学平衡系统，可以在任何所需的微电子衬底上获得选择性区域沉积。 气相系统围绕单个可逆反应设计，其中待沉积的材料在该固相与其气相成分物质之间平衡。 通过调节辅助气流进入反应器组件，可以获得交替的沉积和蚀刻工艺，以产生总体选择性和均匀沉积的整体过程。

公开(公告)号：US5009360A

公开(公告)日：1991-04-23

申请号：US486064

申请日：1990-02-27

申请人： Arnold Reisman ,  Deepak Nayak ,  Iwona Turlik

发明人： Arnold Reisman ,  Deepak Nayak ,  Iwona Turlik

IPC分类号： B23K20/16

CPC分类号： B23K20/16

摘要： A method and resulting structure is disclosed in which a metal-to-metal bond is formed by heating the surfaces to be bonded in an oxidizing ambient atmosphere until the desired bond is achieved. Heating takes place at 700.degree. C.-1200.degree. C. and bonding may be enhanced by applying pressure between the surfaces while heating.

摘要翻译： 公开了一种方法和结果，其中通过在氧化环境气氛中加热要结合的表面直到达到所需的粘结而形成金属 - 金属键。 加热在700℃-1200℃下进行，加热时可在表面之间施加压力来增强粘结。

公开(公告)号：US4449580A

公开(公告)日：1984-05-22

申请号：US280149

申请日：1981-06-30

申请人： Arnold Reisman ,  Melvin Berkenblit ,  Charles J. Merz, III

发明人： Arnold Reisman ,  Melvin Berkenblit ,  Charles J. Merz, III

IPC分类号： H01L23/42 ,  H01L23/44 ,  H01L23/473 ,  F28D15/00 ,  H01L23/46

CPC分类号： H01L23/44 ,  H01L23/42 ,  H01L2924/0002

摘要： A heat dissipating system for cooling circuit chips or modules is described. The disclosed system includes circuit chips or modules which are vertically mounted, a gas at an elevated pressure being contained within an encased module for providing an enhanced thermal coupling between the chips or modules contained therein, and the walls of the encased module, whereby heat removal from the chips or modules is increased. This enhanced thermal coupling is combined with a reduction in the temperature of the walls of the encased modules so as to reduce the thermal resistance between the surrounding gas and the chips or modules to be cooled, whereby heat removal from the circuit chips or modules is substantially increased.

摘要翻译： 描述了用于冷却电路芯片或模块的散热系统。 所公开的系统包括垂直安装的电路芯片或模块，处于高压下的气体被包含在封装的模块内，用于在包含在其中的芯片或模块之间提供增强的热耦合以及封装模块的壁，由此除热 从芯片或模块增加。 这种增强的热耦合与封装模块的壁的温度降低相结合，以便降低周围气体和待冷却的芯片或模块之间的热阻，从而从电路芯片或模块的热量基本上 增加。

公开(公告)号：US4316209A

公开(公告)日：1982-02-16

申请号：US071528

申请日：1979-08-31

申请人： Paul S. Ho ,  Uwe Koster ,  Tung-Sheng Kuan ,  Iwao Ohdomari ,  Arnold Reisman

发明人： Paul S. Ho ,  Uwe Koster ,  Tung-Sheng Kuan ,  Iwao Ohdomari ,  Arnold Reisman

IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/285 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872 ,  H01L23/48 ,  H01L29/46 ,  H01L29/62

CPC分类号： H01L21/28518 ,  H01L21/28537 ,  H01L29/456 ,  H01L29/47

摘要： Methods and resulting structures for thermally stable metal/silicon contacts are described. The resulting contacts are aluminum which is alloyed with at least one noble metal from the group of Pd and Pt wherein at least one region of the contact is further alloyed with silicon.

摘要翻译： 描述了用于热稳定的金属/硅接触的方法和结果。 所得到的触点是铝，其与至少一种来自Pd和Pt的贵金属合金化，其中接触的至少一个区域进一步与硅合金化。

公开(公告)号：US4187140A

公开(公告)日：1980-02-05

申请号：US950340

申请日：1978-10-11

申请人： Melvin Berkenblit ,  Arnold Reisman

发明人： Melvin Berkenblit ,  Arnold Reisman

IPC分类号： C09K13/06 ,  C23F1/00 ,  C30B33/00 ,  C30B33/10 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3213 ,  C09K13/00

CPC分类号： H01L21/02019 ,  H01L21/30608 ,  H01L21/32134

摘要： There are provided quaternary etchants comprising ethylenediamine, pyrocatechol, water and a diazine as catalyst for the etching of polycrystalline or single crystal silicon over a wide temperature and etch rate range. The etchants provide residue free dissolution, and have etch rates which are essentially unchanged when exposed to oxygen. The etch rate of the etchants can be modulated by the change in concentrations of water and/or pyrocatechol.There is also provided a method for etching polycrystalline or single crystal silicon using the etchants of this invention.

摘要翻译： 提供了包含乙二胺，邻苯二酚，水和二嗪作为催化剂的季蚀刻剂，用于在宽的温度和蚀刻速率范围内蚀刻多晶或单晶硅。 蚀刻剂提供无残留的溶解，并且具有当暴露于氧时基本上不变的蚀刻速率。 蚀刻剂的蚀刻速率可以通过水和/或邻苯二酚的浓度变化来调节。 还提供了使用本发明的蚀刻剂蚀刻多晶或单晶硅的方法。

公开(公告)号：US4155866A

公开(公告)日：1979-05-22

申请号：US899051

申请日：1978-04-24

申请人： Melvin Berkenblit ,  Dennis C. Green ,  Frank B. Kaufman ,  Arnold Reisman

发明人： Melvin Berkenblit ,  Dennis C. Green ,  Frank B. Kaufman ,  Arnold Reisman

IPC分类号： C23F1/10 ,  H01L21/306 ,  H01L21/308 ,  H01L21/302 ,  C09K13/00

CPC分类号： H01L21/02019 ,  H01L21/30608

摘要： A method for controlling the etch rate of a quaternary etchant comprising ethylene diamine, water, pyrocatechol and a diazine. The etching rate is catalyzed and controlled by controlling the amount of the diazine present in the etchant. A method for the controlled etching of silicon is also disclosed.

摘要翻译： 一种用于控制包含乙二胺，水，邻苯二酚和二嗪的四元蚀刻剂的蚀刻速率的方法。 通过控制蚀刻剂中存在的二嗪的量来催化和控制蚀刻速率。 还公开了一种用于硅的受控蚀刻的方法。

公开(公告)号：US5317938A

公开(公告)日：1994-06-07

申请号：US822021

申请日：1992-01-16

申请人： Eugene de Juan, Jr. ,  Gary W. Jones ,  Susan K. Jones ,  Arnold Reisman ,  Jon Van Winkle

发明人： Eugene de Juan, Jr. ,  Gary W. Jones ,  Susan K. Jones ,  Arnold Reisman ,  Jon Van Winkle

IPC分类号： A61B17/32 ,  A61F9/007 ,  B23P15/40 ,  B26B9/00 ,  B21K11/00

CPC分类号： A61B17/32 ,  A61F9/00736 ,  B23P15/40 ,  B26B9/00

摘要： A method of making a microsurgical cutter from a flat planar substrate having a top surface and a bottom surface comprises the steps of (a) forming a photoresist mask layer on the top surface in the pattern of the microsurgical instrument, the mask layer having an edge portion formed in a predetermined pattern therein; and then (b) etching isotropically the top surface of the substrate through the top surface to the bottom surface so that the top surface and bottom surface meet at a cutting edge portion, with the cutting edge portion having a configuration corresponding to the edge portion of the mask layer. The substrates may be formed from semiconductor materials such as silicon, silicon carbide, sapphire and diamond.

摘要翻译： 从具有顶表面和底表面的平面平面基底制造显微手术切割器的方法包括以下步骤：（a）在显微外科器械的图案的顶表面上形成光致抗蚀剂掩模层，掩模层具有边缘 在其中以预定图案形成的部分; 然后（b）通过上表面到底面各向同性蚀刻基板的顶表面，使得顶表面和底表面在切割边缘部分相交，其中切割边缘部分具有对应于 掩模层。 衬底可以由诸如硅，碳化硅，蓝宝石和金刚石的半导体材料形成。