公开(公告)号：US20210391489A1

公开(公告)日：2021-12-16

申请号：US16899028

申请日：2020-06-11

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Vibhor JAIN ,  John J. ELLIS-MONAGHAN

IPC: H01L31/107 ,  H01L31/0352 ,  H01L31/18

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one vertical pillar feature within a trench; a photosensitive semiconductor material extending laterally from sidewalls of the at least one vertical pillar feature; and a contact electrically connecting to the photosensitive semiconductor material.

公开(公告)号：US20240297216A1

公开(公告)日：2024-09-05

申请号：US18659282

申请日：2024-05-09

Applicant: GlobalFoundries U.S. Inc.

Inventor： Anthony K. STAMPER ,  Siva P. ADUSUMILLI ,  Bruce W. PORTH ,  John J. ELLIS-MONAGHAN

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/762 ,  H01L21/764

CPC classification number: H01L29/0649 ,  H01L21/02505 ,  H01L21/7624 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor on insulator substrate with cavity structures and methods of manufacture. The structure includes: a bulk substrate with at least one rectilinear cavity structure; an insulator material sealing the at least one rectilinear cavity structure; and a buried insulator layer on the bulk substrate and over the at least one rectilinear cavity structure.

公开(公告)号：US20230378183A1

公开(公告)日：2023-11-23

申请号：US18231322

申请日：2023-08-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anthony K. STAMPER ,  Uzma RANA ,  Siva P. ADUSUMILLI ,  Steven M. SHANK

IPC: H01L27/12 ,  H01L29/45 ,  H01L21/84 ,  H01L21/28 ,  H01L21/285 ,  H01L29/49

CPC classification number: H01L27/1203 ,  H01L29/45 ,  H01L21/84 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/4933

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to field effect transistors and methods of manufacture. The structure includes: at least one gate structure comprising source/drain regions; and at least one isolation structure perpendicular to the at least one gate structure and within the source/drain regions.

公开(公告)号：US20220293811A1

公开(公告)日：2022-09-15

申请号：US17196756

申请日：2021-03-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Siva P. ADUSUMILLI ,  Mark D. LEVY ,  Yusheng BIAN

IPC: H01L31/105 ,  H01L31/0352 ,  H01L31/18

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodetectors used with a broadband signal and methods of manufacture. The structure includes: a first photodetector; a second photodetector adjacent to the first photodetector; a first airgap of a first size under the first photodetector structured to detect a first wavelength of light; and a second airgap of a second size under the second photodetector structured to detect a second wavelength of light.

公开(公告)号：US20220137292A1

公开(公告)日：2022-05-05

申请号：US17084186

申请日：2020-10-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng BIAN ,  Siva P. ADUSUMILLI ,  Bo PENG ,  Kenneth J. GIEWONT

IPC: G02B6/124 ,  G02B6/13

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to grating couplers integrated with one or more airgap and methods of manufacture. The structure includes: a substrate material comprising one or more airgaps; and a grating coupler disposed over the substrate material and the one or more airgaps.

公开(公告)号：US20220028992A1

公开(公告)日：2022-01-27

申请号：US17498241

申请日：2021-10-11

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anthony K. STAMPER ,  Steven M. SHANK ,  Siva P. ADUSUMILLI ,  Michel J. ABOU-KHALIL

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to vertically stacked field effect transistors and methods of manufacture. The structure includes: at least one lower gate structure on a bottom of a trench formed in substrate material; insulator material partially filling trench and over the at least one lower gate structure; an epitaxial material on the insulator material and isolated from sidewalls of the trench; and at least one upper gate structure stacked vertically above the at least one lower gate structure and located on the epitaxial material.

公开(公告)号：US20240162116A1

公开(公告)日：2024-05-16

申请号：US17988335

申请日：2022-11-16

Applicant: GlobalFoundries U.S. Inc.

Inventor： Siva P. ADUSUMILLI ,  Mark D. LEVY ,  Steven M. SHANK

IPC: H01L23/473 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L23/473 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to structures with buried fluidic channels and methods of manufacture. The structure includes: a semiconductor substrate; a device layer with a gradient profile on the semiconductor substrate; a fluidic channel within the device layer comprising the gradient profile; at least one inlet channel in fluid communication with the fluidic channel; and at least one outlet channel in fluid communication with the fluidic channel.

公开(公告)号：US20230187449A1

公开(公告)日：2023-06-15

申请号：US18104504

申请日：2023-02-01

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Alvin J. JOSEPH ,  Ramsey HAZBUN

IPC: H01L27/12 ,  H01L21/762 ,  H01L23/66 ,  H01L21/8234

CPC classification number: H01L27/1207 ,  H01L21/76283 ,  H01L23/66 ,  H01L21/823481 ,  H01L2223/6605

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to switches in a bulk substrate and methods of manufacture. The structure includes: at least one active device having a channel region of a first semiconductor material; a single air gap under the channel region of the at least one active device; and a second semiconductor material being coplanar with and laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the first semiconductor material.

公开(公告)号：US20220093731A1

公开(公告)日：2022-03-24

申请号：US17028178

申请日：2020-09-22

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Anthony K. STAMPER ,  Siva P. ADUSUMILLI ,  Bruce W. PORTH ,  John J. ELLIS-MONAGHAN

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/764 ,  H01L21/762

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor on insulator substrate with cavity structures and methods of manufacture. The structure includes: a bulk substrate with at least one rectilinear cavity structure; an insulator material sealing the at least one rectilinear cavity structure; and a buried insulator layer on the bulk substrate and over the at least one rectilinear cavity structure.

公开(公告)号：US20220068975A1

公开(公告)日：2022-03-03

申请号：US17003179

申请日：2020-08-26

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. ADUSUMILLI ,  Anthony K. STAMPER ,  Bruce W. PORTH ,  John J. ELLIS-MONAGHAN

IPC: H01L27/12 ,  H01L29/06 ,  H01L21/762

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a wafer with localized cavity structures and methods of manufacture. A structure includes a bulk substrate with localized semiconductor on insulator (SOI) regions and bulk device regions, the localized SOI regions includes multiple cavity structures and substrate material of the bulk substrate.