DISPLAY DEVICE
    11.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号:US20090002615A1

    公开(公告)日:2009-01-01

    申请号:US12137703

    申请日:2008-06-12

    CPC classification number: G02F1/133345

    Abstract: To manufacture display devices with improved image quality and reliability or display devices with a large screen at low cost with high productivity. An electrode layer containing a conductive polymer is used as an electrode layer of a display element in a display device and an inorganic insulating film serving as a passivation film is provided between the electrode layer and a display layer. Ionic impurities in the electrode layer are easily ionized and become mobile ions and thereby deteriorating a liquid crystal material or the like which is included in a display layer in a display element. Ionic impurities in the electrode layer are prevented from moving into a display layer by the inorganic insulating film. Thus, the reliability of the display device can be improved.

    Abstract translation: 制造具有改进的图像质量和可靠性的显示装置,或者以低成本,高生产率显示具有大屏幕的装置。 包含导电聚合物的电极层用作显示装置中的显示元件的电极层,并且在电极层和显示层之间设置用作钝化膜的无机绝缘膜。 电极层中的离子杂质容易电离并成为移动离子,从而使包含在显示元件中的显示层中的液晶材料等劣化。 通过无机绝缘膜防止电极层中的离子杂质移动到显示层。 因此,可以提高显示装置的可靠性。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    12.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20120298989A1

    公开(公告)日:2012-11-29

    申请号:US13567235

    申请日:2012-08-06

    Applicant: Gen FUJII

    Inventor: Gen FUJII

    Abstract: The manufacturing method of the present invention includes steps of selectively forming a photocatalyst material or a material including an amino group by discharging a composition including the photocatalyst material or the material including an amino group; immersing the photocatalyst material or the material including an amino group in a solution including a plating catalyst material so as to adsorb or deposit the plating catalyst material onto the photocatalyst material or the material including an amino group; and immersing the plating catalyst material in a plating solution including a metal material so as to form a metal film on a surface of the photocatalyst material or the material including an amino group adsorbing or depositing the plating catalyst material, thereby manufacturing a semiconductor device. The pH of the solution including the plating catalyst material is adjusted in a range of 3 to 6.

    Abstract translation: 本发明的制造方法包括通过排出包含光催化剂材料的组合物或包含氨基的材料来选择性地形成光催化剂材料或包含氨基的材料的步骤; 将光催化剂材料或包含氨基的材料浸入包括镀催化剂材料的溶液中以将镀催化剂材料吸附或沉积到光催化剂材料或包含氨基的材料上; 以及将镀催化剂材料浸渍在包含金属材料的镀液中,以在光催化剂材料的表面上形成金属膜,或者包含吸附或沉积镀催化剂材料的氨基的材料,从而制造半导体器件。 包括电镀催化剂材料的溶液的pH调节在3至6的范围内。

    THIN FILM TRANSISTOR AND DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THEREOF
    14.
    发明申请
    THIN FILM TRANSISTOR AND DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THEREOF 有权
    薄膜晶体管和显示器件及其制造方法

    公开(公告)号:US20110256702A1

    公开(公告)日:2011-10-20

    申请号:US13098751

    申请日:2011-05-02

    Applicant: Gen FUJII

    Inventor: Gen FUJII

    Abstract: The present invention discloses a display device and a manufacturing method thereof by which a manufacturing process can be simplified. Further, the present invention discloses technique for manufacturing a pattern such as a wiring into a desired shape with good controllability. A method for forming a pattern for constituting the display device according to the present invention comprises the steps of forming a first region and a second region; discharging a composition containing a pattern formation material to a region across the second region and the first region; and flowing a part of the composition discharged to the first region into the second region; wherein wettability with respect to the composition of the first region is lower than that of the second composition.

    Abstract translation: 本发明公开了一种可以简化制造工艺的显示装置及其制造方法。 此外,本发明公开了一种用于将诸如布线的图案制造成具有良好可控性的所需形状的技术。 根据本发明的用于形成用于构成显示装置的图案的方法包括以下步骤:形成第一区域和第二区域; 将含有图案形成材料的组合物排放到横跨第二区域和第一区域的区域; 并将排出到第一区域的组合物的一部分流入第二区域; 其中相对于第一区域的组合物的润湿性低于第二组合物的润湿性。

    FORMING METHOD OF CONTACT HOLE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY DEVICE AND EL DISPLAY DEVICE
    16.
    发明申请
    FORMING METHOD OF CONTACT HOLE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY DEVICE AND EL DISPLAY DEVICE 有权
    接触孔的形成方法和半导体器件的制造方法,液晶显示器件和EL显示器件

    公开(公告)号:US20090148971A1

    公开(公告)日:2009-06-11

    申请号:US12368318

    申请日:2009-02-10

    Abstract: When forming a contact hole by a conventional manufacturing step of a semiconductor device, a resist is required to be formed on almost entire surface of a substrate so as to be applied on a film other than an area in which a contact hole is to be formed, leading to drastically reduced throughput. According to a forming method of a contact hole and a manufacturing method of a semiconductor device, an EL display device and a liquid crystal display device of the invention, an island shape organic film is selectively formed over a semiconductor layer, a conductive layer or an insulating layer, and an insulating film is formed around the island shape organic film to form a contact hole. Therefore, a conventional patterning using a resist is not required, and high throughput and low cost can be achieved.

    Abstract translation: 当通过半导体器件的常规制造步骤形成接触孔时,需要在基板的几乎整个表面上形成抗蚀剂,以便施加在除了要形成接触孔的区域之外的膜上 ,导致吞吐量大幅降低。 根据本发明的接触孔的形成方法和半导体装置的制造方法,EL显示装置和液晶显示装置,在半导体层,导电层或导电层上选择性地形成岛状有机膜 绝缘层,并且在岛状有机膜周围形成绝缘膜以形成接触孔。 因此,不需要使用抗蚀剂的常规图案,可以实现高生产率和低成本。

    MANUFACTURING METHOD OF DISPLAY DEVICE
    17.
    发明申请
    MANUFACTURING METHOD OF DISPLAY DEVICE 审中-公开
    显示装置的制造方法

    公开(公告)号:US20070190675A1

    公开(公告)日:2007-08-16

    申请号:US11671742

    申请日:2007-02-06

    CPC classification number: H01J9/2275 G09G3/30 G09G2300/0426

    Abstract: A highly functional and reliable display device with lower power consumption and higher light-emitting efficiency is provided. A light-emitting material is irradiated with light; the light-emitting material irradiated with light is dispersed in a solution containing a binder, and a solution containing the light-emitting material irradiated with light and the binder is formed; a first electrode layer is formed; the solution is applied on the first electrode layer, and a light-emitting layer containing the light-emitting material irradiated with light and the binder is formed; and a second electrode layer is formed over the light-emitting layer, and a light-emitting element is manufactured. An insulating layer may be provided between the first electrode layer and the light-emitting layer or between the second electrode layer and the light-emitting layer.

    Abstract translation: 提供了具有较低功耗和较高发光效率的高功能可靠的显示装置。 用光照射发光材料; 用光照射的发光材料分散在含有粘合剂的溶液中,形成含有照射光的发光材料和粘合剂的溶液; 形成第一电极层; 将溶液施加在第一电极层上,形成含有照射光的发光材料和粘合剂的发光层; 并且在发光层上形成第二电极层,并且制造发光元件。 可以在第一电极层和发光层之间或第二电极层和发光层之间设置绝缘层。

    METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE
    18.
    发明申请
    METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE 审中-公开
    形成图案的方法,制造发光装置的方法和发光装置

    公开(公告)号:US20110303911A1

    公开(公告)日:2011-12-15

    申请号:US13213255

    申请日:2011-08-19

    Abstract: Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.

    Abstract translation: 对设置有光催化性导电膜和绝缘膜的基板的表面进行氧化处理; 进行硅烷偶联剂的处理,形成硅烷偶联剂膜,将基材的表面改性为疏液性; 并且用能量大于或等于用于形成光催化性导电膜的材料的带隙的能量(小于等于390nm)的光照射衬底的表面,使得只有硅烷偶联 光催化性导电膜的表面上的试剂膜分解,光催化性导电膜的表面可以改性为亲液性的。

    DISPLAY DEVICE, METHOD FOR MANUFACTURING THEREOF, AND TELEVISION DEVICE
    19.
    发明申请
    DISPLAY DEVICE, METHOD FOR MANUFACTURING THEREOF, AND TELEVISION DEVICE 有权
    显示装置,其制造方法和电视装置

    公开(公告)号:US20110165741A1

    公开(公告)日:2011-07-07

    申请号:US13050117

    申请日:2011-03-17

    Abstract: The invention provides a display device and a method for manufacturing thereof by increasing a material efficiently as well as simplifying steps. Also, the invention provides a technique for forming a pattern such as a wiring, that is used for forming a display device, to have a predetermined shape with an excellent controllability. The method for manufacturing a display device includes the steps of: forming a lyophobic region; selectively irradiating laser beam in the lyophobic region to form a lyophilic region; selectively discharging a composition, that contains a conductive material, in the lyophilic region to form a gate electrode layer; forming a gate insulating layer and a semiconductor layer over the gate electrode layer; discharging a composition containing a conductive material over the semiconductor layer to form a source electrode layer and a drain electrode layer; and forming a pixel electrode layer on the source or drain electrode layer.

    Abstract translation: 本发明提供一种显示装置及其制造方法,其通过有效地增加材料以及简化步骤来制造。 此外,本发明提供了一种用于形成用于形成显示装置的布线等图案以具有优异的可控性的预定形状的技术。 制造显示装置的方法包括以下步骤:形成疏液区域; 选择性地将激光束照射在疏液区域以形成亲液性区域; 选择性地将含有导电材料的组合物在亲液区域中排出以形成栅极电极层; 在栅电极层上形成栅极绝缘层和半导体层; 在半导体层上排出含有导电材料的组合物,以形成源电极层和漏电极层; 以及在源极或漏极电极层上形成像素电极层。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    20.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
    半导体器件和半导体器件的制造方法

    公开(公告)号:US20110031494A1

    公开(公告)日:2011-02-10

    申请号:US12911041

    申请日:2010-10-25

    CPC classification number: H01L51/0022 H01L51/0533 H01L51/0545

    Abstract: A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

    Abstract translation: 一种制造半导体器件的方法包括以下步骤:在透光衬底上形成栅电极,在栅电极和衬底上形成含有无机材料的栅极绝缘层,在栅极上形成含有可光聚合反应性基团的有机层 通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层,通过除去除了聚合的有机层的残留物形成有机聚合物层,形成 在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜,通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极,形成 栅电极上的半导体层,源极和漏极。

Patent Agency Ranking