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公开(公告)号：US20120085278A1
公开(公告)日：2012-04-12
申请号：US13157250
申请日：2011-06-09
申请人： Mehrdad M. Moslehi , Karl-Josef Kramer , Jay Ashjaee , George D. Kamian , David Mordo , Takao Yonehara
发明人： Mehrdad M. Moslehi , Karl-Josef Kramer , Jay Ashjaee , George D. Kamian , David Mordo , Takao Yonehara
IPC分类号： C30B23/06 , H01L21/673 , C30B23/02 , C23C16/455 , C23C16/46
CPC分类号： H01L21/67754 , C23C16/45585 , C23C16/481 , C23C16/54 , H01L21/02532 , H01L21/0262 , H01L21/6719 , H01L21/67757
摘要： High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.
摘要翻译： 提供了高生产率薄膜沉积方法和工具，其中厚度在小于1微米至100微米范围内的薄膜半导体材料层沉积在反应器中的多个晶片上。 将晶片装载在分批基座上，并且批量基座位于反应器中，使得在基座和反应器的内壁之间形成锥形气体流动空间。 然后将反应性气体引导到锥形气体空间中并遍及每个晶片，从而改善每个晶片和从晶片到晶片的沉积均匀性。
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12.发明授权公开(公告)号：US09870937B2
公开(公告)日：2018-01-16
申请号：US13157250
申请日：2011-06-09
申请人： Mehrdad M. Moslehi , Karl-Josef Kramer , Jay Ashjaee , George D. Kamian , David Mordo , Takao Yonehara
发明人： Mehrdad M. Moslehi , Karl-Josef Kramer , Jay Ashjaee , George D. Kamian , David Mordo , Takao Yonehara
IPC分类号： C30B25/14 , H01L21/677 , C23C16/455 , C23C16/48 , C23C16/54 , H01L21/67 , H01L21/02
CPC分类号： H01L21/67754 , C23C16/45585 , C23C16/481 , C23C16/54 , H01L21/02532 , H01L21/0262 , H01L21/6719 , H01L21/67757
摘要： High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.
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13.发明授权Apparatus for forming porous silicon layers on at least two surfaces of a plurality of silicon templates 有权用于在多个硅模板的至少两个表面上形成多孔硅层的装置公开(公告)号：US09401276B2
公开(公告)日：2016-07-26
申请号：US13554103
申请日：2012-07-20
申请人： Mehrdad M. Moslehi , Karl-Josef Kramer , David Xuan-Qi Wang , Pawan Kapur , Somnath Nag , George D. Kamian , Jay Ashjaee , Takao Yonehara
发明人： Mehrdad M. Moslehi , Karl-Josef Kramer , David Xuan-Qi Wang , Pawan Kapur , Somnath Nag , George D. Kamian , Jay Ashjaee , Takao Yonehara
CPC分类号： H01L21/20 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An apparatus for forming porous silicon layers on at least two surfaces of a plurality of silicon templates in a batch electrochemical anodic etch process is provided. The apparatus comprises a plurality of edge-sealing template mounts operable to prevent formation of porous silicon at the edges of a plurality of templates. An electrolyte is disposed among the plurality of templates. The apparatus further comprises a power supply operable to switch polarity, change current intensity, and control etching time to produce the porous silicon layers.
摘要翻译： 提供了一种在批次电化学阳极蚀刻工艺中在多个硅模板的至少两个表面上形成多孔硅层的装置。 该装置包括多个边缘密封模板安装件，其可操作以防止在多个模板的边缘处形成多孔硅。 在多个模板中设置电解质。 该装置还包括可操作以切换极性，改变电流强度和控制蚀刻时间以产生多孔硅层的电源。
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14.发明申请DOUBLE-SIDED REUSABLE TEMPLATE FOR FABRICATION OF SEMICONDUCTOR SUBSTRATES FOR PHOTOVOLTAIC CELL AND MICROELECTRONICS DEVICE MANUFACTURING 有权用于制造用于光电晶体和微电子器件制造的半导体衬底的双面可重复模板公开(公告)号：US20130171808A1
公开(公告)日：2013-07-04
申请号：US13554103
申请日：2012-07-20
申请人： Mehrdad M. Moslehi , Karl-Josef Kramer , David Xuan-Qi Wang , Pawan Kapur , Somnath Nag , George D. Kamian , Jay Ashjaee , Takao Yonehara
发明人： Mehrdad M. Moslehi , Karl-Josef Kramer , David Xuan-Qi Wang , Pawan Kapur , Somnath Nag , George D. Kamian , Jay Ashjaee , Takao Yonehara
IPC分类号： H01L21/20
CPC分类号： H01L21/20 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re-usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.
摘要翻译： 本公开提供了从可再使用的半导体模板的两侧制造TFSS的制造方法和装置设计，从而有效地增加了基板制造的吞吐量并降低了基板的制造成本。 对于给定数量的模板重用周期，这种方法还将每个制造的衬底（TFSS）的平均起始模板成本降低约2倍。
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公开(公告)号：US08282768B1
公开(公告)日：2012-10-09
申请号：US12586175
申请日：2009-09-18
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67115 , H01L21/02041 , H01L21/02203 , H01L21/02348 , H01L21/67017 , H01L21/6719 , H01L21/67207
摘要： An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Methods and systems using a purge ring are particularly useful for purging and cleaning porogens from a UV curing chamber. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.
摘要翻译： 用于清洗处理室中的空间的装置包括净化气体源; 清洗环的入口部分; 入口挡板，其位于入口部分中并且流体连接到吹扫气体源; 和净化环的排气部分。 入口部分和排气部分限定具有360°周边的环孔空间。 入口挡板优选地围绕所述周边不小于180°。 入口挡板可操作以将清洗气体输送到环孔空间中。 排气部分可操作以将净化气体和其它物质输送出环孔空间。 通过使清洁气体流过入口挡板来进行清洁环和处理室中的其它结构的清洁。 使用清洗环的方法和系统特别适用于清洗和清洁紫外线固化室中的致孔剂。 一些实施例包括气体入口增压室和排气通道，但不包括净化环。
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16.发明申请APPARATUS AND METHODS FOR UNIFORMLY FORMING POROUS SEMICONDUCTOR ON A SUBSTRATE 有权在基板上均匀形成多孔半导体的装置和方法公开(公告)号：US20120145553A1
公开(公告)日：2012-06-14
申请号：US13288721
申请日：2011-11-03
申请人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George D. Kamian , Jay Ashjaee , Takao Yonehara
发明人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George D. Kamian , Jay Ashjaee , Takao Yonehara
CPC分类号： C25D11/005 , C25D7/12 , C25D11/022 , C25D11/024 , C25D11/32 , C25D17/001 , C25D17/008 , C25D17/08 , C25D21/04 , C25F7/00
摘要： This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译： 本公开使得能够高生产率控制制造均匀的多孔半导体层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙或多孔层）制成）。 一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。 此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。
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公开(公告)号：US20100267245A1
公开(公告)日：2010-10-21
申请号：US12759820
申请日：2010-04-14
CPC分类号： C23C16/45502 , C23C16/45517 , C23C16/45591 , C23C16/4583 , C23C16/481 , C30B25/12 , C30B25/14
摘要： The present disclosure presents a chemical vapor deposition reactor having improved chemical utilization and cost efficiency. The wafer susceptors of the present disclosure may be used in a stackable configuration for processing many wafers simultaneously. The reactors of the present disclosure may be reverse-flow depletion mode reactors, which tends to provide uniform film thickness and a high degree of chemical utilization.
摘要翻译： 本公开内容提出了具有改进的化学利用和成本效率的化学气相沉积反应器。 本公开的晶片承载体可以以可堆叠的构造使用，以同时处理许多晶片。 本公开的反应器可以是逆流耗尽型反应器，其倾向于提供均匀的膜厚度和高度的化学应用。
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