公开(公告)号：US20220093463A1

公开(公告)日：2022-03-24

申请号：US17414428

申请日：2019-12-18

Applicant: National University Corporation Tokai National Higher Education and Research System ,  HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi TANAKA ,  Chiaki SASAOKA ,  Hiroshi AMANO ,  Daisuke KAWAGUCHI ,  Yotaro WANI ,  Yasunori IGASAKI

IPC: H01L21/78 ,  B23K26/53 ,  H01L21/304 ,  H01L21/67

Abstract: There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as not to overlap the plurality of first modified spots, by causing laser light to enter into the semiconductor object from the surface.

公开(公告)号：US20200180082A1

公开(公告)日：2020-06-11

申请号：US16640963

申请日：2018-06-27

Applicant: National University Corporation Nagoya University ,  HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi TANAKA ,  Daisuke KAWAGUCHI

IPC: B23K26/53 ,  B28D5/00

Abstract: A technique related to a substrate manufacturing method is provided. The substrate manufacturing method comprises irradiating laser into an ingot of gallium nitride (GaN) along a direction substantially vertical to a surface of the ingot and forming a reformed layer in which gallium has precipitated and that is substantially parallel to the ingot surface. The substrate manufacturing method comprises separating the ingot into a plurality with a position where the reformed layer has been formed as a boundary by dissolving the reformed layer.

公开(公告)号：US20220055156A1

公开(公告)日：2022-02-24

申请号：US17414668

申请日：2019-12-18

Applicant: National University Corporation Tokai National Higher Education and Research System ,  HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi TANAKA ,  Chiaki SASAOKA ,  Hiroshi AMANO ,  Daisuke KAWAGUCHI ,  Yotaro WANI ,  Yasunori IGASAKI ,  Toshiki YUI

IPC: B23K26/53 ,  B28D5/00

Abstract: There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step.

公开(公告)号：US20190074664A1

公开(公告)日：2019-03-07

申请号：US16121825

申请日：2018-09-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akio ITO ,  Kazuue FUJITA ,  Daisuke KAWAGUCHI ,  Tatsuo DOUGAKIUCHI ,  Tadataka EDAMURA

IPC: H01S5/34 ,  H01S5/22 ,  H01S5/028

CPC classification number: H01S5/3402 ,  H01S5/0201 ,  H01S5/021 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/028 ,  H01S5/0604 ,  H01S5/1096 ,  H01S5/12 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/2275 ,  H01S2301/176 ,  H01S2302/02

Abstract: A method of manufacturing a quantum cascade laser beam source (1) includes: preparing a semiconductor stacked body (20); forming a pair of first excavated portions (41 and 42) and a ridge portion which is interposed between the pair of first excavated portions (41 and 42); forming channel structures (51 and 52) and circumferential edge portions (61 and 62) which are formed to interpose the channel structures (51 and 52) between the ridge portion (30) and the circumferential edge portion; forming an electrode pattern (81) in contact with a first area (29a) and forming an electrode pattern (82) in contact with a second area (22a); fixing a crystal growth surface side to a support substrate (91); removing an Fe-doped (semi-insulating) InP single-crystal substrate (21); fixing a Si substrate (93); and peeling the support substrate (91).

公开(公告)号：US20160052085A1

公开(公告)日：2016-02-25

申请号：US14778746

申请日：2014-03-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke KAWAGUCHI ,  Makoto NAKANO ,  Ryota SUGIO ,  Tsubasa HIROSE ,  Keisuke ARAKI

IPC: B23K26/00 ,  B23K26/53 ,  B23K26/06

CPC classification number: B23K26/53 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0736 ,  B23K26/40 ,  B23K2103/50 ,  B28D5/00 ,  C03B33/0222 ,  C03B33/07 ,  G02B3/08 ,  G02B5/001 ,  Y02P40/57

Abstract: A laser processing device converges laser light at an object to be processed so as to form a modified region within the object along a line to cut. The laser processing device comprises a laser light source emitting the laser light, a spatial light modulator modulating the laser light emitted from the laser light source, and a converging optical system converging the laser light modulated by the spatial light modulator at the object. The spatial light modulator displays an axicon lens pattern as a modulation pattern so as to form converging points at a plurality of positions juxtaposed close to each other along a laser light irradiation direction.

Abstract translation: 激光加工装置将激光会聚在待处理物体上，以沿着切割线在物体内形成改质区域。 激光加工装置包括发射激光的激光光源，调制从激光光源发射的激光的空间光调制器，以及将由空间光调制器调制的激光会聚在物体处的会聚光学系统。 空间光调制器将旋转透镜图案显示为调制图案，以便沿着激光照射方向在彼此靠近并列的多个位置处形成会聚点。

公开(公告)号：US20150075221A1

公开(公告)日：2015-03-19

申请号：US14554502

申请日：2014-11-26

Applicant: HAMAMATSU PHOTONICS K.K. ,  Asahi Glass Company, Limited

Inventor： Daisuke KAWAGUCHI ,  Ikuo NAGASAWA

IPC: B23K26/00 ,  C03B33/02

CPC classification number: B23K26/53 ,  C03B33/0222 ,  C03B33/033 ,  C03B33/04 ,  Y02P40/57

Abstract: A method for cutting a strengthened glass sheet according to a first embodiment of the present invention includes: a step of collecting and scanning laser light in an intermediate layer, thereby forming a first reformed region along a first cutting-scheduled line; and a step of applying an external force to propagate a crack from the first reformed region as a start point in a thickness direction of the strengthened glass sheet, thereby dividing the strengthened glass sheet. In the step of forming the first reformed region, a width d1 (mm) of the first reformed region in the thickness direction is set to d1

Abstract translation: 根据本发明的第一实施例的用于切割加强玻璃板的方法包括：在中间层中收集和扫描激光的步骤，从而沿着第一切割预定线形成第一重整区域; 以及施加外力作为强化玻璃板的厚度方向的起始点的第一重整区域的裂纹传播的步骤，由此分割强化玻璃板。 在形成第一重整区域的步骤中，基于断裂韧度将第一重整区域的厚度方向的宽度d1（mm）设定为d1 <2×103×Kc2 / {＆pgr×（CT）2} 强化玻璃板的Kc（MPa·√m）和残留在中间层中的拉伸应力CT（MPa）。