公开(公告)号：US20230116302A1

公开(公告)日：2023-04-13

申请号：US17948329

申请日：2022-09-20

Applicant: Denso Corporation ,  Toyota Jidosha Kabushiki Kaisha ,  MIRISE Technologies Corporation ,  Hamamatsu Photonics K.K. ,  National University Corporation Tokai National Higher Education and Research System

Inventor： MASATAKE NAGAYA ,  Hiroki Watanabe ,  Junji Ohara ,  Daisuke Kawaguchi ,  Keisuke Hara ,  Chiaki Sasaoka ,  Jun Kojima ,  Shoichi Onda

IPC: H01L23/14 ,  H01L23/13 ,  H01L21/8252

Abstract: A semiconductor chip includes a chip-constituting substrate having one surface, the other surface opposite to the one surface, and two pairs of opposing side surfaces connecting the one surface and the other surface. The one surface and the other surface are along one of a {0001} c-plane, a {1-100} m-plane, and a {11-20} a-plane. One of the two pairs of opposing side surfaces is along another one of the {0001} c-plane, the {1-100} m-plane, and the {11-20} a-plane. The other of the two pairs of opposing side surfaces is along the other of the {0001} c-plane, the {1-100} m-plane, and the {11-20} a-plane. The side surface includes an altered layer containing gallium oxide and gallium metal in a surface layer portion in a depth direction which is a normal direction to the side surface.

公开(公告)号：US20210327757A1

公开(公告)日：2021-10-21

申请号：US17229137

申请日：2021-04-13

Applicant: DENSO CORPORATION ,  HAMAMATSU PHOTONICS K.K. ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Masatake Nagaya ,  Kazukuni Hara ,  Daisuke Kawaguchi ,  Toshiki Yui ,  Chiaki Sasaoka ,  Jun Kojima ,  Shoichi Onda

IPC: H01L21/78 ,  H01L29/20 ,  H01L29/06 ,  H01L21/02 ,  H01L21/268

Abstract: A semiconductor chip includes: an epitaxial film made of gallium nitride; a semiconductor element disposed in the epitaxial film; a chip formation substrate including the epitaxial film and having a first surface, a second surface opposite to the first surface, and a side surface connecting the first surface and the second surface; and a convex and a concavity on the side surface.

公开(公告)号：US09914183B2

公开(公告)日：2018-03-13

申请号：US14778746

申请日：2014-03-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke Kawaguchi ,  Makoto Nakano ,  Ryota Sugio ,  Tsubasa Hirose ,  Keisuke Araki

IPC: B23K26/00 ,  B23K26/06 ,  B23K26/53 ,  G02B3/08 ,  B23K26/073 ,  G02B5/00 ,  B23K26/40 ,  B28D5/00 ,  C03B33/02 ,  B23K103/00 ,  C03B33/07

CPC classification number: B23K26/53 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0736 ,  B23K26/40 ,  B23K2103/50 ,  B28D5/00 ,  C03B33/0222 ,  C03B33/07 ,  G02B3/08 ,  G02B5/001 ,  Y02P40/57

Abstract: A laser processing device converges laser light at an object to be processed so as to form a modified region within the object along a line to cut. The laser processing device comprises a laser light source emitting the laser light, a spatial light modulator modulating the laser light emitted from the laser light source, and a converging optical system converging the laser light modulated by the spatial light modulator at the object. The spatial light modulator displays an axicon lens pattern as a modulation pattern so as to form converging points at a plurality of positions juxtaposed close to each other along a laser light irradiation direction.

公开(公告)号：US09902017B2

公开(公告)日：2018-02-27

申请号：US14778673

申请日：2014-03-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke Kawaguchi ,  Tsubasa Hirose ,  Keisuke Araki

IPC: B23K26/00 ,  B23K26/06 ,  B23K26/53 ,  B23K26/073 ,  B23K26/40 ,  B28D5/00 ,  B23K26/064 ,  C03B33/02 ,  B23K103/00

CPC classification number: B23K26/0057 ,  B23K26/0617 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/0736 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/00 ,  C03B33/0222 ,  Y02P40/57

Abstract: A laser processing device comprises a laser light source emitting the laser light, a spatial light modulator modulating the laser light emitted from the laser light source, and a converging optical system converging the laser light modulated by the spatial light modulator at the object. A plurality of rows of modified regions include at least an entrance-surface-side modified region located on the laser light entrance surface side, an opposite-surface-side modified region located on the opposite surface side of the laser light entrance surface, and a middle modified region located between the entrance-surface-side modified region and opposite-surface-side modified region. When forming the middle modified region, the spatial light modulator displays an axicon lens pattern as a modulation pattern so as to form converging points at a plurality of positions juxtaposed close to each other along a laser light irradiation direction. When forming the entrance-surface-side modified region and opposite-surface-side modified region, the spatial light modulator is restrained from displaying the axicon lens pattern as the modulation pattern.

公开(公告)号：US11810821B2

公开(公告)日：2023-11-07

申请号：US17229137

申请日：2021-04-13

Applicant: DENSO CORPORATION ,  HAMAMATSU PHOTONICS K.K. ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Masatake Nagaya ,  Kazukuni Hara ,  Daisuke Kawaguchi ,  Toshiki Yui ,  Chiaki Sasaoka ,  Jun Kojima ,  Shoichi Onda

IPC: H01L21/78 ,  H01L29/20 ,  H01L21/268 ,  H01L21/02 ,  H01L29/06

CPC classification number: H01L21/78 ,  H01L21/0254 ,  H01L21/02389 ,  H01L21/268 ,  H01L29/0657 ,  H01L29/2003

Abstract: A semiconductor chip includes: an epitaxial film made of gallium nitride; a semiconductor element disposed in the epitaxial film; a chip formation substrate including the epitaxial film and having a first surface, a second surface opposite to the first surface, and a side surface connecting the first surface and the second surface; and a convex and a concavity on the side surface.

公开(公告)号：US10315403B2

公开(公告)日：2019-06-11

申请号：US15051038

申请日：2016-02-23

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hideki Shimoi ,  Naoki Uchiyama ,  Daisuke Kawaguchi

IPC: B32B38/00 ,  B32B37/06 ,  B23K26/53 ,  B28D5/00 ,  H01L21/78 ,  B23K26/40 ,  B23K101/40 ,  B23K103/00

Abstract: A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.

公开(公告)号：US09764421B2

公开(公告)日：2017-09-19

申请号：US14779652

申请日：2014-03-18

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke Kawaguchi

IPC: B23K26/00 ,  B23K26/364 ,  B23K26/57 ,  C03B33/02 ,  C03B33/07 ,  B23K26/38 ,  B23K26/40 ,  B23K103/00

CPC classification number: B23K26/0063 ,  B23K26/00 ,  B23K26/0006 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K26/53 ,  B23K26/57 ,  B23K2103/56 ,  C03B33/0222 ,  C03B33/076

Abstract: It comprises a first step of preparing an object; a second step of forming a modified region in a first member along a line by irradiating the first member with laser light while using a front face of the object as a laser light entrance surface; a third step of forming a processing scar in a bonding layer along the line by irradiating the bonding layer with laser light while using the front face as a laser light entrance surface; and a fourth step, after the first to third steps, of forming a modified region in a second member along the line by irradiating the second member with laser light while using a rear face of the object as a laser light entrance surface; the fourth step uses the processing scar as a reference for alignment of a laser light irradiation position with respect to the second member.