公开(公告)号：US12288720B2

公开(公告)日：2025-04-29

申请号：US17680464

申请日：2022-02-25

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  HAMAMATSU PHOTONICS K.K.

Inventor： Masatake Nagaya ,  Daisuke Kawaguchi

IPC: H01L21/78 ,  H01L21/26 ,  H01L21/784 ,  H01L23/544 ,  H01L29/66 ,  H01L33/00 ,  H10D30/01 ,  H10D89/00 ,  H10H20/01

Abstract: A manufacturing method for a semiconductor chip includes: preparing a GaN wafer; producing a processed wafer by forming an epitaxial film on a surface of the GaN wafer to have chip formation regions adjacent to a first surface of the processed wafer; forming a first surface-side element component of a semiconductor element in each chip formation region; forming a wafer transformation layer along a planar direction of the processed wafer by irradiating an inside of the processed wafer with a laser beam; dividing the processed wafer at the wafer transformation layer into a chip formation wafer and a recycle wafer; extracting a semiconductor chip from the chip formation wafer; and after the preparing the GaN wafer and before the dividing the processed wafer, irradiating an inside of the gallium nitride wafer or the processed wafer with a laser beam to form a mark by deposition of gallium.

公开(公告)号：US11810783B2

公开(公告)日：2023-11-07

申请号：US17229141

申请日：2021-04-13

Applicant: DENSO CORPORATION ,  HAMAMATSU PHOTONICS K.K. ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Chiaki Sasaoka ,  Jun Kojima ,  Shoichi Onda ,  Masatake Nagaya ,  Kazukuni Hara ,  Daisuke Kawaguchi

IPC: H01L33/00 ,  H01L21/02 ,  H01L29/20 ,  H01L29/45 ,  H01L29/40 ,  H01L21/306

CPC classification number: H01L21/02389 ,  H01L21/0254 ,  H01L21/02694 ,  H01L21/30625 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/454

Abstract: A gallium nitride semiconductor device includes: a chip formation substrate made of gallium nitride and having one surface and an other surface opposite to the one surface; a one surface side element component disposed on the one surface and providing a component of an one surface side of a semiconductor element; and a metal film constituting a back surface electrode in contact with the other surface. The other surface has an irregularity provided by a plurality of convex portions with a trapezoidal cross section and a plurality of concave portions located between the convex portions; and an upper base surface of the trapezoidal cross section in each of the plurality of convex portions is opposed to the one surface.

公开(公告)号：US10439363B2

公开(公告)日：2019-10-08

申请号：US16121825

申请日：2018-09-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akio Ito ,  Kazuue Fujita ,  Daisuke Kawaguchi ,  Tatsuo Dougakiuchi ,  Tadataka Edamura

IPC: H01S5/028 ,  H01S5/34 ,  H01S5/22

Abstract: A method of manufacturing a quantum cascade laser beam source (1) includes: preparing a semiconductor stacked body (20); forming a pair of first excavated portions (41 and 42) and a ridge portion which is interposed between the pair of first excavated portions (41 and 42); forming channel structures (51 and 52) and circumferential edge portions (61 and 62) which are formed to interpose the channel structures (51 and 52) between the ridge portion (30) and the circumferential edge portion; forming an electrode pattern (81) in contact with a first area (29a) and forming an electrode pattern (82) in contact with a second area (22a); fixing a crystal growth surface side to a support substrate (91); removing an Fe-doped (semi-insulating) InP single-crystal substrate (21); fixing a Si substrate (93); and peeling the support substrate (91).

公开(公告)号：US10124439B2

公开(公告)日：2018-11-13

申请号：US14778621

申请日：2014-03-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke Kawaguchi ,  Makoto Nakano ,  Ryota Sugio ,  Tsubasa Hirose ,  Keisuke Araki

IPC: B23K26/00 ,  B23K26/06 ,  B23K26/53 ,  B23K26/064 ,  H01L21/30 ,  C03B33/02 ,  C03B33/09 ,  B23K26/0622 ,  B23K26/03 ,  B23K26/08 ,  B23K103/00

Abstract: The laser processing device comprises a laser light source emitting a laser light, a converging optical system converging the laser light at an object to be processed, and an aberration providing part for imparting an aberration to the laser light converged at the object by the converging optical system. In an optical axis direction of the laser light, letting a reference aberration range be a range of a converging-induced aberration as an aberration occurring at a position where the laser light is converged as a result of converging the laser light at the object, the aberration providing part imparts a first aberration to the laser light such that the laser light has an elongated range longer than the reference aberration range in the optical axis direction as an aberration range and an intensity distribution in the optical axis direction with a continuous undulation in the elongated range.

公开(公告)号：US09902016B2

公开(公告)日：2018-02-27

申请号：US14778619

申请日：2014-03-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke Kawaguchi ,  Tsubasa Hirose ,  Keisuke Araki

IPC: B23K26/00 ,  B23K26/067 ,  B23K26/53 ,  B23K26/06 ,  B23K26/073 ,  C03B33/02 ,  H01L21/78 ,  B23K26/40 ,  C03B33/07 ,  B23K103/16 ,  B23K103/00

CPC classification number: B23K26/0057 ,  B23K26/0648 ,  B23K26/0736 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/172 ,  B23K2103/50 ,  B23K2103/54 ,  C03B33/0222 ,  C03B33/07 ,  H01L21/78 ,  Y02P40/57

Abstract: A laser processing device converges laser light at an object to be processed having a silicon part containing silicon mounted on a glass part containing glass with a resin part interposed therebetween so as to form a modified region within the object along a line to cut. The laser processing device comprises a laser light source emitting the laser light, a spatial light modulator modulating the laser light emitted from the laser light source, and a converging optical system converging the laser light modulated by the spatial light modulator at the object. When forming the modified region in the glass part, the spatial light modulator displays an axicon lens pattern as a modulation pattern so as to form converging points at a plurality of positions juxtaposed close to each other along a laser light irradiation direction.

公开(公告)号：US12194570B2

公开(公告)日：2025-01-14

申请号：US17414428

申请日：2019-12-18

Applicant: National University Corporation Tokai National Higher Education and Research System ,  HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Tanaka ,  Chiaki Sasaoka ,  Hiroshi Amano ,  Daisuke Kawaguchi ,  Yotaro Wani ,  Yasunori Igasaki

IPC: B23K26/53 ,  B28D5/00 ,  H01L21/304 ,  H01L21/67 ,  H01L21/78

Abstract: There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as not to overlap the plurality of first modified spots, by causing laser light to enter into the semiconductor object from the surface.

公开(公告)号：US11784039B2

公开(公告)日：2023-10-10

申请号：US17229356

申请日：2021-04-13

Applicant: DENSO CORPORATION ,  HAMAMATSU PHOTONICS K.K. ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Jun Kojima ,  Chiaki Sasaoka ,  Shoichi Onda ,  Masatake Nagaya ,  Kazukuni Hara ,  Daisuke Kawaguchi

IPC: H01L21/02 ,  H01L21/78 ,  H01L21/8252

CPC classification number: H01L21/02008 ,  H01L21/0254 ,  H01L21/02293 ,  H01L21/02354 ,  H01L21/02389 ,  H01L21/7813 ,  H01L21/8252

Abstract: A method for manufacturing a gallium nitride semiconductor device includes: preparing a gallium nitride wafer; forming an epitaxial growth film on the gallium nitride wafer to provide a processed wafer having chip formation regions; perform a surface side process on a one surface side of the processed wafer; removing the gallium nitride wafer and dividing the processed wafer into a chip formation wafer and a recycle wafer; and forming an other surface side element component on an other surface side of the chip formation wafer.

公开(公告)号：US20220352027A1

公开(公告)日：2022-11-03

申请号：US17708490

申请日：2022-03-30

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  National University Corporation Tokai National Higher Education and Research System ,  HAMAMATSU PHOTONICS K.K.

Inventor： Shinichi Hoshi ,  Masatake Nagaya ,  Chiaki Sasaoka ,  Daisuke Kawaguchi ,  Keisuke Hara

IPC: H01L21/78 ,  H01L29/20 ,  H01L29/778 ,  H01L21/02

Abstract: A semiconductor chip includes a chip constituent substrate having a first surface and a second surface, and including a layer containing gallium nitride. The chip constituent substrate is provided with a semiconductor element, and components constituting the semiconductor element are located more in an area adjacent to the first surface than in an area adjacent to the second surface. The chip constituent substrate is formed with a through hole penetrating the chip constituent substrate from the first surface to the second surface. The through hole defines a first opening adjacent to the first surface and a second opening adjacent to the second surface, and the first opening is larger than the second opening.

公开(公告)号：US10124440B2

公开(公告)日：2018-11-13

申请号：US14778766

申请日：2014-03-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke Kawaguchi ,  Makoto Nakano ,  Ryota Sugio ,  Tsubasa Hirose ,  Keisuke Araki

IPC: B23K26/06 ,  B23K26/00 ,  B23K26/53 ,  B23K26/0622 ,  B23K26/03 ,  B23K26/08 ,  B23K26/064 ,  B23K103/00

Abstract: A laser processing device forms a modified region in an object to be processed by converging ultrashort pulse laser light at the object and comprises a laser light source emitting the laser light, a converging optical system converging the laser light emitted from the laser light source at the object, and an aberration providing part imparting an aberration to the laser light converged at the object by the converging optical system. In an optical axis direction of the laser light, letting a reference aberration range be a range of a converging-induced aberration as an aberration occurring at a position where the laser light is converged as a result of converging the laser light at the object, the aberration providing part imparts a first aberration to the laser light such that the laser light has an elongated range longer than the reference aberration range in the optical axis direction as an aberration range and an intensity distribution in the optical axis direction with a continuous undulation in the elongated range.

公开(公告)号：US12293945B2

公开(公告)日：2025-05-06

申请号：US17708490

申请日：2022-03-30

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  National University Corporation Tokai National Higher Education and Research System ,  HAMAMATSU PHOTONICS K.K.

Inventor： Shinichi Hoshi ,  Masatake Nagaya ,  Chiaki Sasaoka ,  Daisuke Kawaguchi ,  Keisuke Hara

IPC: H01L21/78 ,  H01L21/02 ,  H10D30/47 ,  H10D62/85

Abstract: A semiconductor chip includes a chip constituent substrate having a first surface and a second surface, and including a layer containing gallium nitride. The chip constituent substrate is provided with a semiconductor element, and components constituting the semiconductor element are located more in an area adjacent to the first surface than in an area adjacent to the second surface. The chip constituent substrate is formed with a through hole penetrating the chip constituent substrate from the first surface to the second surface. The through hole defines a first opening adjacent to the first surface and a second opening adjacent to the second surface, and the first opening is larger than the second opening.