公开(公告)号：US20200373739A1

公开(公告)日：2020-11-26

申请号：US16769805

申请日：2018-11-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Yoshitaka KUROSAKA ,  Yuu TAKIGUCHI ,  Takahiro SUGIYAMA

IPC: H01S5/22 ,  H01S5/062 ,  H01S5/042 ,  H01S5/183

Abstract: The embodiment relates to a light-emitting device in which a positional relationship between a modified refractive index region's gravity-center position and the associated lattice point differs from a conventional device, and a production method. In this device, a stacked body including a light-emitting portion and a phase modulation layer optically coupled to the light-emitting portion is on a substrate. The phase modulation layer includes a base layer and plural modified refractive index regions in the base layer. Each modified refractive index region's gravity-center position locates on a virtual straight line passing through a corresponding reference lattice point among lattice points of a virtual square lattice on the base layer's design plane. A distance between the reference lattice point and the modified refractive index region's gravity center along the virtual straight line is individually set such that this device outputs light forming an optical image.

公开(公告)号：US20190312412A1

公开(公告)日：2019-10-10

申请号：US16434789

申请日：2019-06-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshiro NOMOTO

IPC: H01S5/183 ,  H01S5/026 ,  H01S5/028 ,  H01S5/042 ,  H01S5/06 ,  H01S5/343 ,  H01S5/42

Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.

公开(公告)号：US20190312410A1

公开(公告)日：2019-10-10

申请号：US16432198

申请日：2019-06-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Yoshiro NOMOTO ,  Soh UENOYAMA

IPC: H01S5/18 ,  H01S5/42 ,  H01S5/062

Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

公开(公告)号：US20190252856A1

公开(公告)日：2019-08-15

申请号：US16292531

申请日：2019-03-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Yoshitaka KUROSAKA ,  Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshiro NOMOTO

IPC: H01S5/183 ,  H01S5/028 ,  H01S5/42

Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.

公开(公告)号：US20170222399A1

公开(公告)日：2017-08-03

申请号：US15120149

申请日：2015-02-13

Applicant: Kyoto University ,  HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Akiyoshi WATANABE ,  Yoshitaka KUROSAKA ,  Takahiro SUGIYAMA ,  Susumu NODA

IPC: H01S5/10 ,  H01S5/022 ,  H01S5/343 ,  H01S5/042

CPC classification number: H01S5/105 ,  H01L2224/48091 ,  H01S5/005 ,  H01S5/0078 ,  H01S5/02208 ,  H01S5/02276 ,  H01S5/02292 ,  H01S5/02296 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/06216 ,  H01S5/0622 ,  H01S5/0653 ,  H01S5/18 ,  H01S5/34313 ,  H01S5/34353 ,  H01L2924/00014

Abstract: A control circuit in this laser equipment drives a drive circuit of a photonic crystal laser element under a predetermined condition. It was found that a wavelength width of a laser beam to be output from the photonic crystal laser element is dependent on a standardized drive current k and a pulse width T, and had a predetermined relationship with these. By meeting this condition, a laser beam with a plurality of wavelengths can be controlled and output.

公开(公告)号：US20250079792A1

公开(公告)日：2025-03-06

申请号：US18844129

申请日：2023-03-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kibo OTE ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Yuu TAKIGUCHI ,  Takahiro SUGIYAMA ,  Soh UENOYAMA

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/223

Abstract: A semiconductor light-emitting element includes a semiconductor stacked layer, an electrode, and an electrode. The semiconductor stacked layer includes an active layer and a phase modulation layer. The phase modulation layer includes a plurality of phase modulation areas. Each of the plurality of phase modulation areas includes a basic region which has a first refractive index and a plurality of different-refractive-index regions which have a second refractive index different from the first refractive index and which are distributed in a two-dimensional shape. The electrode includes a plurality of electrode parts overlapping the plurality of phase modulation areas when seen in a stacking direction of the semiconductor stacked layer. The plurality of electrode parts are electrically isolated from each other. Laser light oscillating in each of the plurality of phase modulation areas is applied to a common irradiation area as light images according to arrangement of the plurality of different-refractive-index regions.

公开(公告)号：US20220278505A1

公开(公告)日：2022-09-01

申请号：US17749893

申请日：2022-05-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Yoshiro NOMOTO ,  Soh UENOYAMA

IPC: H01S5/11 ,  H01S5/042 ,  H01S5/42

Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

公开(公告)号：US20210391691A1

公开(公告)日：2021-12-16

申请号：US17287149

申请日：2019-10-23

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takahiro SUGIYAMA ,  Akiyoshi WATANABE ,  Hiroki MIYACHI ,  Ryoichi KASHIRO ,  Takeshi KANZAKI

IPC: H01S5/11 ,  H01S5/32 ,  H01S5/02

Abstract: One aspect relates to a light-emitting element having a layer forming a resonance mode. The light-emitting element includes a structure body constituted by a substrate and a semiconductor laminate body including a first cladding layer, a second cladding layer, an active layer, and a resonance-mode forming layer including a basic layer and modified refractive index regions. A laser light output region and a metal electrode film are on opposing surfaces of the structure body. The metal electrode film includes a first layer forming ohmic contact with the structure body, a second layer reflecting light from the resonance-mode forming layer, a third layer, and a fourth layer for solder bonding. The third layer has a different composition from the second layer and the fourth layer, and has a lower diffusion degree than the second layer and the fourth layer to that of a solder material.

公开(公告)号：US20180074226A1

公开(公告)日：2018-03-15

申请号：US15701537

申请日：2017-09-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshiro NOMOTO ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Takahiro SUGIYAMA ,  Soh UENOYAMA

IPC: G02B1/00 ,  G02B5/00 ,  G02F1/19

CPC classification number: G02B1/002 ,  G02B5/008 ,  G02B2207/101 ,  G02F1/19 ,  G02F2202/30

Abstract: A metasurface includes a substrate including a light input surface into which input light is input and a light output surface facing the light input surface, and a plurality of V-shaped antenna elements disposed on the light output surface of the substrate and including a first arm and a second arm continuing on one end of the first arm. The each of the V-shaped antenna elements has a thickness in a range of 100 nm to 400 nm.

公开(公告)号：US20170338624A1

公开(公告)日：2017-11-23

申请号：US15538219

申请日：2015-12-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yuu TAKIGUCHI ,  Kazuyoshi HIROSE ,  Yoshitaka KUROSAKA ,  Takahiro SUGIYAMA ,  Yoshiro NOMOTO

IPC: H01S5/042 ,  H01S5/12 ,  H01S5/022 ,  H01S5/18 ,  H01S5/026 ,  H01S5/343

CPC classification number: H01S5/0425 ,  G02F1/13 ,  H01S3/1065 ,  H01S5/0228 ,  H01S5/026 ,  H01S5/0624 ,  H01S5/06243 ,  H01S5/105 ,  H01S5/12 ,  H01S5/14 ,  H01S5/18 ,  H01S5/18302 ,  H01S5/18361 ,  H01S5/34313 ,  H01S5/34353 ,  H01S2301/02 ,  H01S2301/20

Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.