公开(公告)号：US09502217B2

公开(公告)日：2016-11-22

申请号：US14609807

申请日：2015-01-30

Applicant: Hitachi High-Technologies Corporation

Inventor： Shunsuke Kanazawa ,  Naoki Yasui ,  Michikazu Morimoto ,  Yasuo Ohgoshi

IPC: C23F1/00 ,  H01J37/32 ,  H01L21/3213 ,  C23F4/00

CPC classification number: H01J37/32311 ,  C23F4/00 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32302 ,  H01L21/32137

Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.

公开(公告)号：US11004658B2

公开(公告)日：2021-05-11

申请号：US16050089

申请日：2018-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Michikazu Morimoto ,  Naoki Yasui ,  Yasuo Ohgoshi

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.

公开(公告)号：US10559481B2

公开(公告)日：2020-02-11

申请号：US15056142

申请日：2016-02-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michikazu Morimoto ,  Yasuo Ohgoshi ,  Yuuzou Oohirabaru ,  Tetsuo Ono

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/762

Abstract: Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus.A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.

公开(公告)号：US20170040143A1

公开(公告)日：2017-02-09

申请号：US15333669

申请日：2016-10-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasuo Ohgoshi ,  Michikazu Morimoto ,  Yuuzou Oohirabaru ,  Tetsuo Ono

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32146 ,  H01J37/32174 ,  H01J37/32192 ,  H01J37/32706 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.

Abstract translation: 等离子体处理装置包括用于处理等离子体的样品的处理室，用于在处理室内产生等离子体的RF电源，用于向安装有样品的样品台提供RF偏置功率的RF偏置电源， 脉冲产生单元，用于产生用于调制来自RF电源的用于产生等离子体的输出的第一脉冲和用于调制来自RF偏置电源的输出的第二脉冲，以及用于提供样品对样品的处理的控制的控制器 。 脉冲发生单元产生基于从控制器发送的脉冲延迟时间同步的第一脉冲和第二脉冲。 建立脉冲延迟时间以延迟相对于第一脉冲的第二脉冲。

公开(公告)号：US09336999B2

公开(公告)日：2016-05-10

申请号：US14183556

申请日：2014-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Michikazu Morimoto ,  Naoki Yasui ,  Yasuo Ohgoshi

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32192 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.

Abstract translation: 在包括在真空室中提供用于产生等离子体的第一高频电力的第一高频电源的等离子体处理装置中，将第二高频电源供给到样品的样品台上的第二高频电源 以及用于第二射频电源的匹配盒，匹配盒在从采样有效期开始之前的经过规定时间后的时间点开始进行匹配的样本信息进行采样， 时间调制的第二射频功率直到接通状态结束，并且在从接通状态结束到下一采样有效期之后的采样有效期间保持匹配状态。

公开(公告)号：US20140363977A1

公开(公告)日：2014-12-11

申请号：US14183556

申请日：2014-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Michikazu Morimoto ,  Naoki Yasui ,  Yasuo Ohgoshi

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32082 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32192 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.

Abstract translation: 在包括在真空室中提供用于产生等离子体的第一高频电力的第一高频电源的等离子体处理装置中，将第二高频电源供给到样品的样品台上的第二高频电源 以及用于第二射频电源的匹配盒，匹配盒在从采样有效期开始之前的经过规定时间后的时间点开始进行匹配的样本信息进行采样， 时间调制的第二射频功率直到接通状态结束，并且在从接通状态结束到下一采样有效期之后的采样有效期间保持匹配状态。

公开(公告)号：US20140148016A1

公开(公告)日：2014-05-29

申请号：US13749784

申请日：2013-01-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Shunsuke Kanazawa ,  Naoki Yasui ,  Michikazu Morimoto ,  Yasuo Ohgoshi

IPC: H01L21/3065

CPC classification number: H01J37/32311 ,  C23F4/00 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32302 ,  H01L21/32137

Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.

Abstract translation: 等离子体处理装置包括对样品进行等离子体处理的处理室，向处理室供给用于等离子体生成的第一高频电力的第一高频电源，提供第二高频电源的第二高频电源 放置样品的样品级的功率和产生用于对第一高频功率进行时间调制的第一脉冲的脉冲产生装置和用于对第二高频功率进行时间调制的第二脉冲。 脉冲发生装置包括控制装置，其控制第一和第二脉冲，使得第一脉冲的频率高于第二脉冲的频率，并且第二脉冲的导通周期包含在第一脉冲的导通周期中 。