公开(公告)号：US07790580B2

公开(公告)日：2010-09-07

申请号：US11684447

申请日：2007-03-09

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277

摘要： The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.

摘要翻译： 本发明提供一种形成包括多晶半导体膜的薄膜晶体管的方法。 该方法包括将非晶半导体薄膜的第一层沉积到衬底上; 在第一非晶半导体薄膜层上沉积第二层薄膜; 图案化第二层薄膜，使得第一层非晶半导体薄膜在选定的位置曝光; 将溶液或气相中的第一和第二层薄膜暴露于含镍化合物; 去除第二层薄膜; 以及在升高的温度下使所述第一非晶半导体薄膜层退火，使得所述第一非晶半导体薄膜层转变为多晶半导体薄膜。

公开(公告)号：US08088676B2

公开(公告)日：2012-01-03

申请号：US11413073

申请日：2006-04-27

申请人： Man Wong ,  Hoi-Sing Kwok ,  Zhiguo Meng ,  Dongli Zhang ,  Xuejie Shi

发明人： Man Wong ,  Hoi-Sing Kwok ,  Zhiguo Meng ,  Dongli Zhang ,  Xuejie Shi

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L27/1277 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78675

摘要： Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon “islands”. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.

摘要翻译： 将结晶诱导金属元素引入到非晶硅薄膜上。 第一个低温热处理会引起金属诱导结晶（MIC）的成核，导致形成小的多晶硅“岛”。 在所得部分结晶的薄膜上形成金属吸收层。 第二种低温热处理完成了MIC工艺，同时从部分结晶的薄膜中吸收金属元素。 该工艺产生所需的多晶硅薄膜。

公开(公告)号：US08426865B2

公开(公告)日：2013-04-23

申请号：US12666220

申请日：2008-02-04

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao

IPC分类号： H01L27/108

CPC分类号： H01L29/78696 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/66757

摘要： A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A single gate covering the entire active channel including the doped lines is still used to control the current flow. Using this BG poly-Si as an active layer and making sure the TFT is designed so that the current flows perpendicularly to the parallel lines of grains, grain boundary effects can be reduced.

摘要翻译： 低温多晶硅器件及其制造技术，性能优良。 使用称为桥接晶粒结构（BG）的掺杂多晶硅线，本征或轻掺杂沟道被分离成多个区域。 覆盖包括掺杂线的整个有源沟道的单个栅极仍然用于控制电流。 使用该BG多晶硅作为有源层，并确保TFT被设计成使得电流垂直于平行的晶粒线流动，可以减小晶界效应。

公开(公告)号：US08013957B2

公开(公告)日：2011-09-06

申请号：US11915120

申请日：2005-05-21

申请人： Zhiguo Meng ,  Man Wong ,  Hoi Sing Kwok

发明人： Zhiguo Meng ,  Man Wong ,  Hoi Sing Kwok

IPC分类号： G02F1/1368 ,  G02F1/1343 ,  H01L21/70

CPC分类号： H01L29/78696 ,  G02F1/133555 ,  G02F1/1362 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/66757

摘要： The construction of electrodes for liquid-crystal displays using larger grain lower absorption (LGLA) poly-Si showing an absorptivity below 20% in the visible light region is described. Integration in the manufacturing of substrates for active-matrix LCDs is shown. Source, drain and channel region (108b, 108c, 108d) of the TFTs as well as the pixel-electrode (108e) are formed conjointly in a single poly-Si layer.

摘要翻译： 描述了使用在可见光区域中显示吸收率低于20％的较大颗粒较低吸收（LGLA）多晶硅的液晶显示器电极的构造。 显示了用于有源矩阵LCD的基板制造的集成。 TFT的源极，漏极和沟道区（108b，108c，108d）以及像素电极（108e）共同形成在单个多晶硅层中。

公开(公告)号：US20100171546A1

公开(公告)日：2010-07-08

申请号：US12666220

申请日：2008-02-04

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao

IPC分类号： G05F3/02 ,  H01L29/786 ,  H01L21/335 ,  H01L29/772

CPC分类号： H01L29/78696 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/66757

摘要： A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A single gate covering the entire active channel including the doped lines is still used to control the current flow. Using this BG poly-Si as an active layer and making sure the TFT is designed so that the current flows perpendicularly to the parallel lines of grains, grain boundary effects can be reduced. Reliability, uniformity and the electrical performance of the BG poly-Si TFT are significantly improved compared with the conventional low temperature poly-Si TFT.

摘要翻译： 低温多晶硅器件及其制造技术，性能优良。 使用称为桥接晶粒结构（BG）的掺杂多晶硅线，本征或轻掺杂沟道被分离成多个区域。 覆盖包括掺杂线的整个有源沟道的单个栅极仍然用于控制电流。 使用该BG多晶硅作为有源层，并确保TFT被设计成使得电流垂直于平行的晶粒线流动，可以减小晶界效应。 与传统的低温多晶硅TFT相比，BG多晶硅TFT的可靠性，均匀性和电性能显着提高。

公开(公告)号：US20080204620A1

公开(公告)日：2008-08-28

申请号：US11915120

申请日：2005-05-21

申请人： Zhiguo Meng ,  Man Wong ,  Hoi Sing Kwok

发明人： Zhiguo Meng ,  Man Wong ,  Hoi Sing Kwok

IPC分类号： G02F1/1368 ,  H01L21/70

CPC分类号： H01L29/78696 ,  G02F1/133555 ,  G02F1/1362 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/66757

摘要： The construction of electrodes for liquid-crystal displays using larger grain lower absorption (LGLA) poly-Si showing an absorptivity below 20% in the visible light region is described. Integration in the manufacturing of substrates for active-matrix LCDs is shown. Source, drain and channel region (108b, 108c, 108d) of the TFTs as well as the pixel-electrode (108e) are formed conjointly in a single poly-Si layer.

摘要翻译： 描述了使用在可见光区域中显示吸收率低于20％的较大颗粒较低吸收（LGLA）多晶硅的液晶显示器电极的构造。 显示了用于有源矩阵LCD的基板制造的集成。 TFT的源极，漏极和沟道区域（108b，108c，108d）以及像素电极（108e）共同形成在单个多晶硅层中。

公开(公告)号：US07381600B2

公开(公告)日：2008-06-03

申请号：US11292257

申请日：2005-12-01

申请人： Man Wong ,  Hoi Sing Kwok ,  Zhiguo Meng

发明人： Man Wong ,  Hoi Sing Kwok ,  Zhiguo Meng

IPC分类号： H01L21/324 ,  H01L21/477

CPC分类号： H01L21/02686 ,  H01L21/02672 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757

摘要： The invention provides a method of forming polycrystalline silicon comprising the steps of: forming a layer of amorphous silicon, forming a layer of metal or metal-containing compound on the layer of amorphous silicon, annealing the layer of amorphous silicon and said layer of metal to form a polycrystalline silicon layer, and irradiating the polycrystalline silicon layer with two different harmonics of a pulsed laser. The pulsed laser is preferably a solid-state laser such as a Nd-Yag laser. One harmonic is chosen such that it is preferentially absorbed by defects in the polycrystalline silicon layer, the other harmonic is absorbed by the bulk polycrystalline silicon.

摘要翻译： 本发明提供一种形成多晶硅的方法，包括以下步骤：形成非晶硅层，在非晶硅层上形成金属或含金属化合物层，将非晶硅层和所述金属层退火到 形成多晶硅层，并用脉冲激光的两个不同谐波照射多晶硅层。 脉冲激光器优选为诸如Nd-Yag激光器的固态激光器。 选择一个谐波使得其被多晶硅层中的缺陷优先吸收，另一个谐波被体多晶硅吸收。

公开(公告)号：US20060263957A1

公开(公告)日：2006-11-23

申请号：US11413073

申请日：2006-04-27

申请人： Man Wong ,  Hoi-Sing Kwok ,  Zhiguo Meng ,  Dongli Zhang ,  Xuejie Shi

发明人： Man Wong ,  Hoi-Sing Kwok ,  Zhiguo Meng ,  Dongli Zhang ,  Xuejie Shi

IPC分类号： H01L21/84

CPC分类号： H01L27/1277 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78675

摘要： Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon “islands”. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.

摘要翻译： 将结晶诱导金属元素引入到非晶硅薄膜上。 第一个低温热处理会引起金属诱导结晶（MIC）的成核，导致形成小的多晶硅“岛”。 在所得部分结晶的薄膜上形成金属吸收层。 第二种低温热处理完成了MIC工艺，同时从部分结晶的薄膜中吸收金属元素。 该工艺产生所需的多晶硅薄膜。

公开(公告)号：US20110012124A1

公开(公告)日：2011-01-20

申请号：US12841316

申请日：2010-07-22

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

IPC分类号： H01L33/08 ,  H01L21/8234

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277

摘要： The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase ; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.

摘要翻译： 本发明提供一种形成包括多晶半导体膜的薄膜晶体管的方法。 该方法包括将非晶半导体薄膜的第一层沉积到衬底上; 在第一非晶半导体薄膜层上沉积第二层薄膜; 图案化第二层薄膜，使得第一层非晶半导体薄膜在选定的位置曝光; 将溶液或气相中的第一和第二层薄膜暴露于含镍化合物; 去除第二层薄膜; 以及在升高的温度下使所述第一非晶半导体薄膜层退火，使得所述第一非晶半导体薄膜层转变为多晶半导体薄膜。

公开(公告)号：US06953716B2

公开(公告)日：2005-10-11

申请号：US10740537

申请日：2003-12-22

申请人： Man Wong ,  Hoi Sing Kwok ,  Zhiguo Meng ,  Mingxiang Wang

发明人： Man Wong ,  Hoi Sing Kwok ,  Zhiguo Meng ,  Mingxiang Wang

IPC分类号： H01L21/00 ,  H01L21/04 ,  H01L21/20 ,  H01L21/324 ,  H01L21/36

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022

摘要： A metal induced lateral crystallization (MILC) poly-silicon material is produced by depositing a metal in a predefined pattern on amorphous silicon, and heat treating the silicon at a first temperature to form a MILC poly-Si material. The MILC poly-Si material is further heat treated at a second temperature higher than the first temperature to induce recrystallization. The second high temperature recrystallization step significantly enhances the material structure, and in particular the grain structure, of the poly-Si material with substantial benefits to the performance of semiconductor devices made therefrom.

摘要翻译： 金属诱导横向结晶（MILC）多晶硅材料是通过在非晶硅上以预定图案沉积金属制造的，并在第一温度下热处理硅以形成MILC多晶硅材料。 在高于第一温度的第二温度下进一步对MILC多晶硅材料进行热处理以引发重结晶。 第二高温再结晶步骤显着地提高了多晶硅材料的材料结构，特别是晶粒结构，对由其制成的半导体器件的性能具有实质的益处。