利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

24 条记录 (耗时 0.024 秒)

    Ultrathin film multi-crystalline photovoltaic device
    1.
    发明授权
    Ultrathin film multi-crystalline photovoltaic device 有权
    超薄膜多晶光伏器件

    公开(公告)号：US09299863B2

    公开(公告)日：2016-03-29

    申请号：US12437236

    申请日：2009-05-07

    申请人： Hoi Sing Kwok ,  Zhiguo Meng ,  Man Wong

    发明人： Hoi Sing Kwok ,  Zhiguo Meng ,  Man Wong

    IPC分类号： H01L31/0236 ,  H01L31/076 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

    CPC分类号： H01L31/0236 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/076 ,  H01L31/077 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    摘要： A solar cell photovoltaic device using ultrathin films of polycrystalline silicon and deep uneven surface structures is disclosed. According to one embodiment, the uneven structures include one or more pits having a depth of at least 10 microns. According to another embodiment, the uneven structures include one or more cones or columns having a height or at least 10 microns. Because the unevenness of the structures, the photovoltaic device is able to use a very thin layer of polycrystalline silicon to effectively trap and absorb light.

    摘要翻译： 公开了一种使用多晶硅和深凹凸表面结构的超薄膜的太阳能电池光伏器件。 根据一个实施例，不平坦结构包括具有至少10微米深度的一个或多个凹坑。 根据另一个实施例，不平坦结构包括具有高度或至少10微米的一个或多个锥体或柱。 由于结构的不均匀性，光伏器件能够使用非常薄的多晶硅层来有效地捕获和吸收光。

    Metal-induced crystallization of amorphous silicon in thin film transistors
    3.
    发明授权
    Metal-induced crystallization of amorphous silicon in thin film transistors 有权
    薄膜晶体管中非晶硅的金属诱导结晶

    公开(公告)号：US07790580B2

    公开(公告)日：2010-09-07

    申请号：US11684447

    申请日：2007-03-09

    申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

    发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277

    摘要： The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.

    摘要翻译： 本发明提供一种形成包括多晶半导体膜的薄膜晶体管的方法。 该方法包括将非晶半导体薄膜的第一层沉积到衬底上; 在第一非晶半导体薄膜层上沉积第二层薄膜; 图案化第二层薄膜，使得第一层非晶半导体薄膜在选定的位置曝光; 将溶液或气相中的第一和第二层薄膜暴露于含镍化合物; 去除第二层薄膜; 以及在升高的温度下使所述第一非晶半导体薄膜层退火，使得所述第一非晶半导体薄膜层转变为多晶半导体薄膜。

    Polycrystalline silicon thin film transistors with bridged-grain structures
    6.
    发明授权
    Polycrystalline silicon thin film transistors with bridged-grain structures 有权
    具有桥接晶粒结构的多晶硅薄膜晶体管

    公开(公告)号：US08426865B2

    公开(公告)日：2013-04-23

    申请号：US12666220

    申请日：2008-02-04

    申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao

    发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao

    IPC分类号： H01L27/108

    CPC分类号： H01L29/78696 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/66757

    摘要： A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A single gate covering the entire active channel including the doped lines is still used to control the current flow. Using this BG poly-Si as an active layer and making sure the TFT is designed so that the current flows perpendicularly to the parallel lines of grains, grain boundary effects can be reduced.

    摘要翻译： 低温多晶硅器件及其制造技术，性能优良。 使用称为桥接晶粒结构（BG）的掺杂多晶硅线，本征或轻掺杂沟道被分离成多个区域。 覆盖包括掺杂线的整个有源沟道的单个栅极仍然用于控制电流。 使用该BG多晶硅作为有源层，并确保TFT被设计成使得电流垂直于平行的晶粒线流动，可以减小晶界效应。

    Polycrystalline silicon thin film transistors with bridged-grain structures
    8.
    发明申请
    Polycrystalline silicon thin film transistors with bridged-grain structures 有权
    具有桥接晶粒结构的多晶硅薄膜晶体管

    公开(公告)号：US20100171546A1

    公开(公告)日：2010-07-08

    申请号：US12666220

    申请日：2008-02-04

    申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao

    发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao

    IPC分类号： G05F3/02 ,  H01L29/786 ,  H01L21/335 ,  H01L29/772

    CPC分类号： H01L29/78696 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/66757

    摘要： A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A single gate covering the entire active channel including the doped lines is still used to control the current flow. Using this BG poly-Si as an active layer and making sure the TFT is designed so that the current flows perpendicularly to the parallel lines of grains, grain boundary effects can be reduced. Reliability, uniformity and the electrical performance of the BG poly-Si TFT are significantly improved compared with the conventional low temperature poly-Si TFT.

    摘要翻译： 低温多晶硅器件及其制造技术，性能优良。 使用称为桥接晶粒结构（BG）的掺杂多晶硅线，本征或轻掺杂沟道被分离成多个区域。 覆盖包括掺杂线的整个有源沟道的单个栅极仍然用于控制电流。 使用该BG多晶硅作为有源层，并确保TFT被设计成使得电流垂直于平行的晶粒线流动，可以减小晶界效应。 与传统的低温多晶硅TFT相比，BG多晶硅TFT的可靠性，均匀性和电性能显着提高。

    Method of annealing polycrystalline silicon using solid-state laser and devices built thereon
    10.
    发明授权
    Method of annealing polycrystalline silicon using solid-state laser and devices built thereon 有权
    使用固态激光器退火多晶硅的方法和其上构建的器件

    公开(公告)号：US07381600B2

    公开(公告)日：2008-06-03

    申请号：US11292257

    申请日：2005-12-01

    申请人： Man Wong ,  Hoi Sing Kwok ,  Zhiguo Meng

    发明人： Man Wong ,  Hoi Sing Kwok ,  Zhiguo Meng

    IPC分类号： H01L21/324 ,  H01L21/477

    CPC分类号： H01L21/02686 ,  H01L21/02672 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757

    摘要： The invention provides a method of forming polycrystalline silicon comprising the steps of: forming a layer of amorphous silicon, forming a layer of metal or metal-containing compound on the layer of amorphous silicon, annealing the layer of amorphous silicon and said layer of metal to form a polycrystalline silicon layer, and irradiating the polycrystalline silicon layer with two different harmonics of a pulsed laser. The pulsed laser is preferably a solid-state laser such as a Nd-Yag laser. One harmonic is chosen such that it is preferentially absorbed by defects in the polycrystalline silicon layer, the other harmonic is absorbed by the bulk polycrystalline silicon.

    摘要翻译： 本发明提供一种形成多晶硅的方法，包括以下步骤：形成非晶硅层，在非晶硅层上形成金属或含金属化合物层，将非晶硅层和所述金属层退火到 形成多晶硅层，并用脉冲激光的两个不同谐波照射多晶硅层。 脉冲激光器优选为诸如Nd-Yag激光器的固态激光器。 选择一个谐波使得其被多晶硅层中的缺陷优先吸收，另一个谐波被体多晶硅吸收。