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    Low powered activation electronic device
    11.
    发明授权
    Low powered activation electronic device 有权
    低功率激活电子设备

    公开(公告)号：US07405372B2

    公开(公告)日：2008-07-29

    申请号：US11212990

    申请日：2005-08-26

    申请人： Jack Chu

    发明人： Jack Chu

    IPC分类号： H01H9/00

    CPC分类号： H03K17/9645 ,  A63H3/36 ,  H01H2239/074 ,  Y10T307/766

    摘要： A low powered activation electronic device includes a power source, an electronic circuit, having two spaced apart electrodes, electrically connected to the power source to form an opened circuit, and two fabric contacts made of textile material provided at the two electrodes of the electronic circuit, wherein the electronic circuit is formed a closed circuit to activate the electronic device in responsive to a physical touch by a human operator at the two fabric contacts.

    摘要翻译： 低功率激活电子设备包括电源，电子电路，具有两个间隔开的电极，电连接到电源以形成开路，以及由设置在电子电路的两个电极处的纺织材料制成的两个织物触点 ，其中所述电子电路形成闭合电路，以响应于所述两个织物触点处的操作者的物理触摸来激活所述电子设备。

    METHOD OF CREATING DEFECT FREE HIGH Ge CONTENT (> 25%) SiGe-ON-INSULATOR (SGOI) SUBSTRATES USING WAFER BONDING TECHNIQUES
    12.
    发明申请
    METHOD OF CREATING DEFECT FREE HIGH Ge CONTENT (> 25%) SiGe-ON-INSULATOR (SGOI) SUBSTRATES USING WAFER BONDING TECHNIQUES 失效
    使用波形焊接技术创建无缺陷高锗含量（> 25％）SiGe-ON-INSULATOR（SGOI）基板的方法

    公开(公告)号：US20070218647A1

    公开(公告)日：2007-09-20

    申请号：US11744600

    申请日：2007-05-04

    申请人： Jack Chu ,  Michael Cobb ,  Philip Saunders ,  Leathen Shi

    发明人： Jack Chu ,  Michael Cobb ,  Philip Saunders ,  Leathen Shi

    IPC分类号： H01L21/18

    CPC分类号： H01L21/76254 ,  H01L21/0245 ,  H01L21/0251 ,  H01L29/1054

    摘要： A method for achieving a substantially defect free SGOI substrate which includes a SiGe layer that has a high Ge content of greater than about 25 atomic % using a low temperature wafer bonding technique is described. The wafer bonding process described in the present application includes an initial prebonding annealing step that is capable of forming a bonding interface comprising elements of Si, Ge and O, i.e., interfacial SiGeO layer, between a SiGe layer and a low temperature oxide layer. The present invention also provides the SGOI substrate and structure that contains the same.

    摘要翻译： 描述了使用低温晶片接合技术来实现包括具有大于约25原子％的高Ge含量的SiGe层的基本上无缺陷的SGOI衬底的方法。 本申请中描述的晶片接合方法包括初始预结合退火步骤，其能够形成包含SiGe层和低温氧化物层之间的Si，Ge和O元素即界面SiGeO层的键合界面。 本发明还提供了包含其的SGOI衬底和结构。

    Autologous platelet gel on a stent graft
    14.
    发明申请
    Autologous platelet gel on a stent graft 审中-公开
    支架移植物上的自体血小板凝胶

    公开(公告)号：US20060095121A1

    公开(公告)日：2006-05-04

    申请号：US10977545

    申请日：2004-10-28

    申请人： Brian Fernandes ,  Jack Chu

    发明人： Brian Fernandes ,  Jack Chu

    IPC分类号： A61F2/06

    CPC分类号： A61L27/3616 ,  A61L27/3641 ,  A61L27/3645 ,  A61L27/54 ,  A61L2300/414

    摘要： Methods for ameliorating stent graft migration and endoleak using treatment site-specific cell growth promoting compositions in combination with stent grafts are disclosed. Also disclosed are application of cell growth promoting compositions such as, but not limited to, autologous platelet gel compositions directly to treatment sites before, during or after stent graft implantation. Additional embodiments include medical devices having autologous platelet gel coatings and/or autologous platelet gel delivery devices useful for treating aneurysms.

    摘要翻译： 公开了使用处理部位特异性细胞生长促进组合物与支架移植物组合来改善支架移植物迁移和内漏的方法。 还公开了将细胞生长促进组合物（例如但不限于自体血小板凝胶组合物）直接施用于支架移植物植入之前，期间或之后的治疗部位。 另外的实施方案包括具有自体血小板凝胶涂层和/或可用于治疗动脉瘤的自体血小板凝胶递送装置的医疗装置。

    High speed lateral heterojunction MISFETS realized by 2-dimensional bandgap engineering and methods thereof
    16.
    发明申请
    High speed lateral heterojunction MISFETS realized by 2-dimensional bandgap engineering and methods thereof 有权
    通过二维带隙工程实现的高速横向异质结MISFETS及其方法

    公开(公告)号：US20050239241A1

    公开(公告)日：2005-10-27

    申请号：US11158726

    申请日：2005-06-22

    申请人： Qiqing Ouyang ,  Jack Chu

    发明人： Qiqing Ouyang ,  Jack Chu

    IPC分类号： H01L29/78 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/80 ,  H01L21/336

    CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/802 ,  Y10S438/933

    摘要： A method for forming and the structure of a strained lateral channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source region on a single crystal semiconductor substrate wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect the body region. The invention reduces the problem of leakage current from the source region via the hetero-junction and lattice strain while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials and alloy composition.

    摘要翻译： 描述了一种用于形成场效应晶体管，场效应晶体管和CMOS电路的应变横向沟道结构的方法，其在单晶半导体衬底上结合了漏极，主体和源极区域，其中在 晶体管的源极和主体，其中源极区域和沟道独立地相对于身体区域进行晶格应变。 本发明通过异质结和晶格应变来减少来自源极区的漏电流的问题，同时通过选择半导体材料和合金组成独立地允许沟道区域中的晶格应变增加迁移率。

    Layer transfer of low defect SiGe using an etch-back process
    17.
    发明申请
    Layer transfer of low defect SiGe using an etch-back process 有权
    使用回蚀工艺对低缺陷SiGe进行层传输

    公开(公告)号：US20050104067A1

    公开(公告)日：2005-05-19

    申请号：US10948421

    申请日：2004-09-23

    申请人： Jack Chu ,  David DiMilia ,  Lijuan Huang

    发明人： Jack Chu ,  David DiMilia ,  Lijuan Huang

    IPC分类号： H01L21/331 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L21/762 ,  H01L27/12 ,  H01L29/161 ,  H01L29/737 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812 ,  H01L29/861 ,  H01L31/10 ,  H01L29/10 ,  C30B1/00 ,  H01L21/48 ,  H01L31/112

    CPC分类号： H01L21/76256 ,  H01L21/2007

    摘要： A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1−yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1−yGey, and strained Si1−yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1−yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.

    摘要翻译： 描述了在松散的SiGe绝缘体上（SGOI）上形成应变Si或SiGe的方法或Si异质结构上的SiGe的方法，该方法包括生长外延Si 1-y Ge层 半导体衬底，通过化学机械抛光的平滑表面，通过热处理将两个衬底结合在一起，并且通过使用SiGe本身作为蚀刻停止层的高选择性蚀刻将SiGe层从一个衬底转移到另一衬底。 转移的SiGe层可以通过CMP平滑其上表面，用于外延沉积弛豫的Si 1-y Ge y Si，并且应变Si 1-y

    Search query user interface
    18.
    发明授权
    Search query user interface 有权

    公开(公告)号：US09836550B2

    公开(公告)日：2017-12-05

    申请号：US12145079

    申请日：2008-06-24

    申请人： Jack Chu ,  Chris Mancini ,  Lawrence Morrisroe

    发明人： Jack Chu ,  Chris Mancini ,  Lawrence Morrisroe

    IPC分类号： G06F3/048 ,  G06F17/30 ,  G06F3/14 ,  G06F5/10

    CPC分类号： G06F17/30899 ,  G06F3/048 ,  G06F3/1438 ,  G06F5/10

    摘要： In a client-server system where a client system presents a browser for user interaction, a browser user interface includes functionality for handling dynamic interface elements received by the browser in connection with received pages, presented as part of the browser user interface and modified in response to selected user input without requiring farther interaction with a server. In addition to, or in place of, dynamic interface elements such as slide sheets, the browser user interface might also include a rotation display area, tool displays that can overlay a page, opaquely or semi-transparently, menu structures, and an ability for the user to modify a page layout without requiring server interaction. The browser might comprise storage for a plurality of rotation display items for storing a summary and a primary presentation for each rotation display item, logic for displaying, by the browser, primary presentations for less all of the plurality of rotation display items in the rotation display area, logic for displaying, by the browser, summaries for items wherein the number of summaries is greater than the number of primary presentations presented at one time, logic for highlighting, among the summaries displayed, the ones of the summaries that correspond to the primary presentations displayed in the rotation display area; and logic for rotating the plurality of rotation display items to display primary presentations for a different subsets of the rotation display items and for updating highlighting of summaries to correspond to the different subsets of rotation display items.

    Low powered activation electronic device
    20.
    发明申请
    Low powered activation electronic device 有权
    低功率激活电子设备

    公开(公告)号：US20110084683A1

    公开(公告)日：2011-04-14

    申请号：US12806460

    申请日：2010-08-13

    申请人： Jack Chu

    发明人： Jack Chu

    IPC分类号： H02J1/00

    CPC分类号： H03K17/9645 ,  A61F13/42 ,  A63H3/36 ,  H01H2239/074

    摘要： A low powered activation electronic device includes a power source, an electronic circuit, having two spaced apart electrodes, electrically connected to the power source to form an opened circuit, and two fabric contacts made of textile material provided at the two electrodes of the electronic circuit, wherein the electronic circuit is formed a closed circuit to activate the electronic device in responsive to a physical touch by a human operator at the two fabric contacts.

    摘要翻译： 低功率激活电子设备包括电源，电子电路，具有两个间隔开的电极，电连接到电源以形成开路，以及由设置在电子电路的两个电极处的纺织材料制成的两个织物触点 ，其中所述电子电路形成闭合电路，以响应于所述两个织物触点处的操作者的物理触摸来激活所述电子设备。