中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

19 records (took 0.017 seconds)

    Differential electro-absorption modulator (EAM) driver
    11.
    发明授权
    Differential electro-absorption modulator (EAM) driver 有权

    公开(公告)号：US09838135B1

    公开(公告)日：2017-12-05

    申请号：US15061994

    申请日：2016-03-04

    Applicant: INPHI CORPORATION

    Inventor： Chao Xu ,  Radhakrishnan L. Nagarajan

    IPC: H04B10/25 ,  H04B10/516 ,  H04B10/50

    CPC classification number: H04B10/516 ,  H04B10/503

    Abstract: Embodiments are directed to a driver circuit for an electro-absorption modulator (EAM). Particular embodiments may employ a single differential electrical driver supplying complementary positive and negative voltage signals to two respective EAMs. DC bias for the EAMs is provided at a common node in the middle. An optical source is split and fed to each of the EAMs. The EAM receiving the positive voltage signal functions to communicate the optical data as output. The other EAM receiving the negative voltage is a dummy device providing a balance load for the differential driver circuit. Signal swing is determined by a termination resistor Rt located between parallel rails of the differential driver circuit. EAM properties such as swing and signal integrity can be traded off by choosing a different value for the termination resistor. In certain embodiments, the optical output of the dummy EAM may be used for device monitoring purposes.

    Hybrid memory blade
    12.
    发明授权
    Hybrid memory blade 有权
    混合内存刀片

    公开(公告)号：US09547610B2

    公开(公告)日：2017-01-17

    申请号：US15073947

    申请日：2016-03-18

    Applicant: INPHI CORPORATION

    Inventor： Christopher Haywood ,  Chao Xu ,  Fouad G. Tamer

    IPC: G06F3/00 ,  G06F13/00 ,  G06F13/28 ,  G11C8/00 ,  H05K7/14 ,  H05K7/20 ,  G06F13/42 ,  G06F13/40

    CPC classification number: G06F13/28 ,  G06F13/4027 ,  G06F13/4282 ,  G11C8/00 ,  H05K7/1487 ,  H05K7/1488 ,  H05K7/1489 ,  H05K7/1491 ,  H05K7/1492 ,  H05K7/20836 ,  Y02D10/14 ,  Y02D10/151

    Abstract: The present invention is directed to server systems and methods thereof. More specifically, embodiments of the present invention provides a memory controller within a server system, where the memory controller is disengageably connected to one or more processors, a plurality of volatile memory modules, and plurality of solid-state memory modules. This memory controller may be connected to other similarly configured memory controllers. The volatile and solid-state memory modules can be removed and/or replaced. There are other embodiments as well.

    Abstract translation: 本发明涉及服务器系统及其方法。 更具体地，本发明的实施例提供了服务器系统内的存储器控​​制器，其中存储器控制器可分离地连接到一个或多个处理器，多个易失性存储器模块和多个固态存储器模块。 该存储器控制器可以连接到其他类似配置的存储器控​​制器。 可以移除和/或更换易失性和固态存储器模块。 还有其它实施例。

    Memory centric computing
    13.
    发明授权
    Memory centric computing 有权
    以内存为中心的计算

    公开(公告)号：US09348539B1

    公开(公告)日：2016-05-24

    申请号：US14194416

    申请日：2014-02-28

    Applicant: INPHI CORPORATION

    Inventor： Nirmal Raj Saxena ,  David Wang ,  Christopher Haywood ,  Eric McDonald ,  Chao Xu

    IPC: G06F3/06

    CPC classification number: G11C11/005 ,  G11C5/04

    Abstract: A hybrid memory system. This system can include a processor coupled to a hybrid memory buffer (HMB) that is coupled to a plurality of DRAM and a plurality of Flash memory modules. The HMB module can include a Memory Storage Controller (MSC) module and a Near-Memory-Processing (NMP) module coupled by a SerDes (Serializer/Deserializer) interface. This system can utilize a hybrid (mixed-memory type) memory system architecture suitable for supporting low-latency DRAM devices and low-cost NAND flash devices within the same memory sub-system for an industry-standard computer system.

    Abstract translation: 混合存储器系统。 该系统可以包括耦合到耦合到多个DRAM和多个闪存模块的混合存储器缓冲器（HMB）的处理器。 HMB模块可以包括由SerDes（串行器/解串器）接口耦合的存储器存储控制器（MSC）模块和近端存储器处理（NMP）模块。 该系统可以利用混合（混合存储器型）存储器系统架构，其适用于在用于工业标准计算机系统的相同存储器子系统中支持低延迟DRAM设备和低成本NAND闪存器件。

Patent Agency Ranking