公开(公告)号：US09178006B2

公开(公告)日：2015-11-03

申请号：US14177118

申请日：2014-02-10

Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc.

Inventor： Xiangxin Rui ,  Hanhong Chen ,  Naonori Fujiwara ,  Imran Hashim ,  Kenichi Koyanagi

IPC: H01L49/02 ,  H01L27/108 ,  H01G4/10

CPC classification number: H01L28/40 ,  H01G4/10 ,  H01G4/1236 ,  H01G4/33 ,  H01L27/10805 ,  H01L27/1085 ,  H01L28/56 ,  H01L28/75

Abstract: A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly-doped or non-doped material. The highly doped material will remain amorphous (

Abstract translation: 用于减少DRAM MIM电容器中的漏电流的方法包括从非晶高掺杂材料，非晶高带隙材料和轻掺杂或非掺杂材料形成多层电介质叠层。 退火步骤后，高掺杂材料将保持无定形（<30％结晶）。 在退火步骤之后，高带隙材料将保持无定形（<30％结晶）。 在退火步骤之后，轻掺杂或非掺杂材料将变成晶体（≥30％结晶）。 高带隙材料形成在无定形高掺杂材料和轻掺杂材料和非掺杂材料之间，并提供通过多层电介质叠层的导电的中间屏障。

公开(公告)号：US20140187015A1

公开(公告)日：2014-07-03

申请号：US13727898

申请日：2012-12-27

Applicant: INTERMOLECULAR, INC. ,  ELPIDA MEMORY, INC.

Inventor： Xiangxin Rui ,  Mitsuhiro Horikawa ,  Hiroyuki Ode ,  Karthik Ramani

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75

Abstract: A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and conductive metal oxide layer. In some embodiments, both the first electrode layer and the second electrode layer contain a conductive base layer and conductive metal oxide layer.

公开(公告)号：US20140167221A1

公开(公告)日：2014-06-19

申请号：US13720289

申请日：2012-12-19

Applicant: INTERMOLECULAR, INC. ,  ELPIDA MEMORY, INC.

Inventor： Xiangxin Rui ,  Sergey Barabash

IPC: H01L49/02

CPC classification number: H01L28/75 ,  H01L28/40 ,  H01L28/56 ,  H01L28/60

Abstract: A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capacitor stack including an oxygen donor layer inserted between the dielectric layer and at least one of the two electrode layers. In some embodiments, the dielectric layer may be doped with an oxygen donor dopant. The oxygen donor materials provide oxygen to the dielectric layer and reduce the concentration of oxygen vacancies, thus reducing the leakage current.

Abstract translation: 降低DRAM金属 - 绝缘体 - 金属电容器中的漏电流的方法包括形成电容器堆叠，该电容器堆叠包括介于介电层和两个电极层中的至少一个之间的供氧体层。 在一些实施例中，介电层可以掺杂有氧供体掺杂剂。 氧供体材料为介电层提供氧气并降低氧空位的浓度，从而减少漏电流。

公开(公告)号：US20130217202A1

公开(公告)日：2013-08-22

申请号：US13830282

申请日：2013-03-14

Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc.

Inventor： Sandra G. Malhotra ,  Hanhong Chen ,  Wim Y. Deweerd ,  Mitsuhiro Horikawa ,  Kenichi Koyanagi ,  Hiroyuki Ode ,  Xiangxin Rui

IPC: H01L49/02

CPC classification number: H01L28/60 ,  H01L28/40 ,  H01L28/75

Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.

公开(公告)号：US20150228710A1

公开(公告)日：2015-08-13

申请号：US14177118

申请日：2014-02-10

Applicant: Elpida Memory, Inc ,  Intermolecular, Inc.

Inventor： Xiangxin Rui ,  Hanhong Chen ,  Naonori Fujiwara ,  Imran Hashim ,  Kenichi Koyanagi

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/40 ,  H01G4/10 ,  H01G4/1236 ,  H01G4/33 ,  H01L27/10805 ,  H01L27/1085 ,  H01L28/56 ,  H01L28/75

Abstract: A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly-doped or non-doped material. The highly doped material will remain amorphous (

Abstract translation: 用于减少DRAM MIM电容器中的漏电流的方法包括从非晶高掺杂材料，非晶高带隙材料和轻掺杂或非掺杂材料形成多层电介质叠层。 退火步骤后，高掺杂材料将保持无定形（<30％结晶）。 在退火步骤之后，高带隙材料将保持无定形（<30％结晶）。 在退火步骤之后，轻掺杂或非掺杂材料将变成晶体（≥30％结晶）。 高带隙材料形成在无定形高掺杂材料和轻掺杂材料和非掺杂材料之间，并提供通过多层电介质叠层的导电的中间屏障。

公开(公告)号：US09105646B2

公开(公告)日：2015-08-11

申请号：US13731548

申请日：2012-12-31

Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc

Inventor： Sandra G. Malhotra ,  Hiroyuki Ode ,  Xiangxin Rui

IPC: H01L21/02 ,  H01L49/02

CPC classification number: H01L28/56 ,  H01L28/65 ,  H01L28/75

Abstract: A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer. The flash layer and the capping layer can be formed using an atomic layer deposition (ALD) technique. The precursor materials used for forming the flash layer and the capping layer are selected such they include at least one metal-oxygen bond. Additionally, the precursor materials are selected to also include “bulky” ligands.

Abstract translation: 一种降低DRAM金属 - 绝缘体 - 金属电容器中的漏电流的方法包括在电介质层和第一电极层之间形成闪电层。 降低DRAM金属 - 绝缘体 - 金属电容器中漏电流的方法包括在电介质层和第二电极层之间形成覆盖层。 闪光层和覆盖层可以使用原子层沉积（ALD）技术形成。 选择用于形成闪光层和覆盖层的前体材料，使得它们包括至少一种金属 - 氧键。 此外，前体材料被选择为也包括“体积大”的配体。

公开(公告)号：US08766346B1

公开(公告)日：2014-07-01

申请号：US13720289

申请日：2012-12-19

Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc.

Inventor： Xiangxin Rui ,  Sergey Barabash

IPC: H01L29/92 ,  H01L49/02

CPC classification number: H01L28/75 ,  H01L28/40 ,  H01L28/56 ,  H01L28/60

Abstract: A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capacitor stack including an oxygen donor layer inserted between the dielectric layer and at least one of the two electrode layers. In some embodiments, the dielectric layer may be doped with an oxygen donor dopant. The oxygen donor materials provide oxygen to the dielectric layer and reduce the concentration of oxygen vacancies, thus reducing the leakage current.

Abstract translation: 降低DRAM金属 - 绝缘体 - 金属电容器中的漏电流的方法包括形成电容器堆叠，该电容器堆叠包括介于介电层和两个电极层中的至少一个之间的供氧体层。 在一些实施例中，介电层可以掺杂有氧供体掺杂剂。 氧供体材料为介电层提供氧气并降低氧空位的浓度，从而减少漏电流。

公开(公告)号：US08569819B1

公开(公告)日：2013-10-29

申请号：US13915050

申请日：2013-06-11

Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc.

Inventor： Xiangxin Rui ,  Hiroyuki Ode

IPC: H01L27/108 ,  H01L29/94 ,  H01L21/8242 ,  H01L21/329

CPC classification number: H01L28/65 ,  H01L28/40 ,  H01L28/60

Abstract: A metal oxide first electrode layer for a MIM DRAM capacitor is formed wherein the first and/or second electrode layers contain one or more dopants up to a total doping concentration that will not prevent the electrode layers from crystallizing during a subsequent anneal step. One or more of the dopants has a work function greater than about 5.0 eV. One or more of the dopants has a resistivity less than about 1000 μΩcm. Advantageously, the electrode layers are conductive molybdenum oxide.

Abstract translation: 形成用于MIM DRAM电容器的金属氧化物第一电极层，其中第一和/或第二电极层含有一个或多个掺杂剂，直到总掺杂浓度，其将不会阻止电极层在随后的退火步骤期间结晶。 一种或多种掺杂剂具有大于约5.0eV的功函数。 一种或多种掺杂剂的电阻率小于约1000μOggacm。 有利地，电极层是导电性氧化钼。

公开(公告)号：US08541283B2

公开(公告)日：2013-09-24

申请号：US13830282

申请日：2013-03-14

Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc

Inventor： Sandra G. Malhotra ,  Hanhong Chen ,  Wim Y. Deweerd ,  Mitsuhiro Horikawa ,  Kenichi Koyanagi ,  Hiroyuki Ode ,  Xiangxin Rui

IPC: H01L21/20 ,  H01L21/31

CPC classification number: H01L28/60 ,  H01L28/40 ,  H01L28/75

Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.

公开(公告)号：US20130071991A1

公开(公告)日：2013-03-21

申请号：US13677239

申请日：2012-11-14

Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc.

Inventor： Xiangxin Rui ,  Takashi Arao ,  Hanhong Chen ,  Naonori Fujiwara ,  Edward Haywood ,  Toshiyuki Hirota ,  Takakazu Kiyomura ,  Kenichi Koyanagi ,  Sandra G. Malhotra

IPC: H01L21/02

CPC classification number: H01L28/60 ,  H01L21/02 ,  H01L27/1085 ,  H01L28/40

Abstract: A method for fabricating a dynamic random access memory capacitor is disclosed. The method may comprise depositing a first titanium nitride (TiN) electrode; creating a first layer of titanium dioxide (TiO2) on the first TiN electrode; depositing a dielectric material on the first layer of titanium dioxide; and depositing a second TiN electrode on the dielectric material.

Abstract translation: 公开了一种用于制造动态随机存取存储器电容器的方法。 该方法可以包括沉积第一氮化钛（TiN）电极; 在第一TiN电极上形成第一层二氧化钛（TiO 2）; 在第一层二氧化钛上沉积电介质材料; 以及在所述电介质材料上沉积第二TiN电极。