公开(公告)号：US10014423B2

公开(公告)日：2018-07-03

申请号：US15281789

申请日：2016-09-30

Applicant: International Business Machines Corporation

Inventor： Priscilla D. Antunez ,  Bruce A. Ek ,  Richard A. Haight ,  Ravin Mankad ,  Saurabh Singh ,  Teodor K. Todorov

IPC: H04L21/00 ,  H01L31/032 ,  H01L31/072 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/0326 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/072 ,  H01L31/1864 ,  H01L31/1868 ,  H01L31/1884 ,  H01L31/1896 ,  Y02E10/50

Abstract: Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

公开(公告)号：US09997655B1

公开(公告)日：2018-06-12

申请号：US15634477

申请日：2017-06-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Talia S. Gershon ,  Richard A. Haight ,  Saurabh Singh ,  Teodor K. Todorov

IPC: H01L31/072 ,  H01L31/032 ,  H01L31/18

CPC classification number: H01L31/0326 ,  H01L31/18

Abstract: A method of preparing a Ag2ZnSn(S,Se)4 compound, including dissolving selenourea (SeC(NH2)2) in an aprotic solvent, and dissolving a silver salt, a zinc salt, and a tin salt in the aprotic solvent with the selenourea to form a metal solution; and coating the metal solution onto a substrate to form an Ag2ZnSn(S,Se)4 compound layer on the substrate.

公开(公告)号：US20170323985A1

公开(公告)日：2017-11-09

申请号：US15658790

申请日：2017-07-25

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Richard A. Haight ,  James B. Hannon ,  Satoshi Oida

IPC: H01L31/0224 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/032

CPC classification number: H01L31/022441 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/0324 ,  H01L31/0326 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/0445 ,  H01L31/072 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/50

Abstract: A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

公开(公告)号：US20160351733A1

公开(公告)日：2016-12-01

申请号：US14727450

申请日：2015-06-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Talia S. Gershon ,  Richard A. Haight ,  Jeehwan Kim ,  Yun Seog Lee

IPC: H01L31/0236 ,  H01L31/036 ,  H01L31/20

CPC classification number: H01L31/02366 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/036 ,  H01L31/03921 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/208 ,  Y02E10/50

Abstract: A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

公开(公告)号：US08564935B2

公开(公告)日：2013-10-22

申请号：US13745221

申请日：2013-01-18

Applicant: International Business Machines Corporation

Inventor： Richard A. Haight ,  Stephen M. Rossnagel

IPC: H01G9/00

CPC classification number: H01G9/145 ,  B82Y99/00 ,  H01G9/004 ,  H01G9/155 ,  Y02E60/13

Abstract: A capacitor includes a plurality of nanochannels formed in a dielectric material. A conductive film is formed over interior surfaces of the nanochannels, and a charge barrier is formed over the conductive film. An electrolytic solution is disposed in the nanochannels. An electrode is coupled to the electrolytic solution in the nanochannels to form the capacitor.

公开(公告)号：US11276796B2

公开(公告)日：2022-03-15

申请号：US16438205

申请日：2019-06-11

Applicant: International Business Machines Corporation

Inventor： Priscilla D. Antunez ,  Arthur W. Ellis ,  Richard A. Haight ,  James B. Hannon ,  Satoshi Oida

IPC: H01L31/044 ,  H01L31/0725 ,  H01L31/032 ,  H01L31/18 ,  H01L31/0352

Abstract: Photovoltaic structures having multiple absorber layers separated by a diffusion barrier are provided. In one aspect, a method of forming an absorber on a substrate includes: depositing a first layer of light absorbing material on the substrate; depositing a diffusion barrier; depositing a second layer of light absorbing material on the diffusion barrier, wherein the first layer of light absorbing material has a different band gap from the second layer of light absorbing material; and annealing the absorber, wherein the diffusion barrier prevents diffusion of elements between the first layer of light absorbing material and the second layer of light absorbing material during the annealing. A solar cell and method for formation thereof are also provided.

公开(公告)号：US10446704B2

公开(公告)日：2019-10-15

申请号：US14984512

申请日：2015-12-30

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Oki Gunawan ,  Richard A. Haight ,  Ravin Mankad

IPC: H01L31/032 ,  H01L31/072 ,  H01L31/0224

Abstract: Techniques for forming an ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO2, ZnO, SnO, ZnSnO, Ga2O3, and combinations thereof. A photovoltaic device is also provided.

公开(公告)号：US10361331B2

公开(公告)日：2019-07-23

申请号：US15409142

申请日：2017-01-18

Applicant: International Business Machines Corporation

Inventor： Priscilla D. Antunez ,  Arthur W. Ellis ,  Richard A. Haight ,  James B. Hannon ,  Satoshi Oida

IPC: H01L31/18 ,  H01L31/0725 ,  H01L31/032 ,  H01L31/0352

Abstract: Photovoltaic structures having multiple absorber layers separated by a diffusion barrier are provided. In one aspect, a method of forming an absorber on a substrate includes: depositing a first layer of light absorbing material on the substrate; depositing a diffusion barrier; depositing a second layer of light absorbing material on the diffusion barrier, wherein the first layer of light absorbing material has a different band gap from the second layer of light absorbing material; and annealing the absorber, wherein the diffusion barrier prevents diffusion of elements between the first layer of light absorbing material and the second layer of light absorbing material during the annealing. A solar cell and method for formation thereof are also provided.

公开(公告)号：US20190140127A1

公开(公告)日：2019-05-09

申请号：US16235713

申请日：2018-12-28

Applicant: International Business Machines Corporation

Inventor： Liang-Yi Chang ,  Talia S. Gershon ,  Richard A. Haight ,  Yun Seog Lee

IPC: H01L31/065 ,  H01L31/032 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0749 ,  H01L31/072 ,  H01L21/02 ,  H01L31/0224 ,  H01L31/0392

Abstract: A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate includes the steps of: depositing a layer of a first kesterite material on the substrate using a vapor phase deposition process, wherein the first kesterite material includes Cu, Zn, Sn, and at least one of S and Se; annealing the first kesterite material to crystallize the first kesterite material; and depositing a layer of a second kesterite material on a side of the first kesterite material opposite the substrate using a solution phase deposition process, wherein the second kesterite material includes Cu, Zn, Sn, and at least one of S and Se, wherein the first kesterite material and the second kesterite material form a multi-layer stack of the absorber material on the substrate. A photovoltaic device and method of formation thereof are also provided.

公开(公告)号：US10270259B2

公开(公告)日：2019-04-23

申请号：US15299631

申请日：2016-10-21

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Richard A. Haight ,  James B. Hannon ,  Teodor K. Todorov

IPC: H02J3/46 ,  H02J7/34 ,  H02J7/35 ,  H05K1/18 ,  H01L31/18 ,  H02S40/38 ,  H01L27/142 ,  H01L31/053 ,  H02J3/38

Abstract: Aspects relate to a system and a method of operating an integrated device is provided. The method includes providing a circuit board that includes one or more on-board electronic components and an upper surface configured as a substrate, providing photovoltaic device layers that include at least a semi-conductor absorber layer, a buffer layer, and a top electrode layer on the upper surface of the circuit board that form a photovoltaic device using the upper surface of the circuit board as a photovoltaic device substrate, wherein the buffer layer is integrally deposited between the semi-conductor absorber layer and the top electrode, generating electricity using the photovoltaic device, and powering one or more of the on-board electronic components using the electricity from the photovoltaic device.