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    DIELECTRIC RETENTION AND METHOD OF FORMING MEMORY PILLAR
    14.
    发明申请
    DIELECTRIC RETENTION AND METHOD OF FORMING MEMORY PILLAR 有权

    公开(公告)号：US20210399212A1

    公开(公告)日：2021-12-23

    申请号：US16903516

    申请日：2020-06-17

    Applicant: International Business Machines Corporation

    Inventor： Saba Zare ,  Michael Rizzolo ,  Mona A. Ebrish ,  Theodorus E. Standaert

    IPC: H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01F41/34

    Abstract: A method of manufacturing a magnetic random access memory device includes depositing a liner on an intermediate device including an opening in a sacrificial dielectric layer, depositing a conductive metal over the liner and in the opening, removing a portion of the conductive metal while preserving the liner and a thickness of the sacrificial dielectric layer, removing a first portion of the liner by etching, wherein the liner is recessed into the opening, depositing a plurality of metallic tunnel junction layers, forming a hardmask on the plurality of metallic tunnel junction layers, and patterning the metallic tunnel junction layers to form a metallic tunnel junction stack and simultaneously clear a second portion of the liner and a portion the sacrificial dielectric layer.

    Sacrificial buffer layer for metal removal at a bevel edge of a substrate
    15.
    发明授权
    Sacrificial buffer layer for metal removal at a bevel edge of a substrate 有权

    公开(公告)号：US10892404B1

    公开(公告)日：2021-01-12

    申请号：US16506459

    申请日：2019-07-09

    Applicant: International Business Machines Corporation

    Inventor： Ashim Dutta ,  Saba Zare ,  Michael Rizzolo ,  Theodorus E. Standaert ,  Daniel Charles Edelstein

    IPC: H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/10

    Abstract: A method of forming a semiconductor structure includes forming a dielectric layer surrounding contacts over a top surface and bevel edge of a substrate, forming a sacrificial buffer layer over the dielectric layer, removing portions of the sacrificial buffer layer formed over the dielectric layer on the top surface of the substrate, and patterning device structures including one or more metal layers over the contacts, wherein patterning the device structures removes portions of the metal layers formed over the top surface of the substrate leaving the metal layers on the bevel edge. The method also includes forming an encapsulation layer and performing a bevel dry etch to remove the encapsulation layer and the metal layers on the bevel edge. The bevel dry etch damages the sacrificial buffer layer on the bevel edge underneath the metal layers. The method further includes removing the damaged sacrificial buffer layer from the bevel edge.

    Dielectric retention and method of forming memory pillar
    17.
    发明授权
    Dielectric retention and method of forming memory pillar 有权

    公开(公告)号：US11569442B2

    公开(公告)日：2023-01-31

    申请号：US16903516

    申请日：2020-06-17

    Applicant: International Business Machines Corporation

    Inventor： Saba Zare ,  Michael Rizzolo ,  Mona A. Ebrish ,  Theodorus E. Standaert

    IPC: H01L43/12 ,  H01F41/34 ,  G11C11/16 ,  H01L43/02

    Abstract: A method of manufacturing a magnetic random access memory device includes depositing a liner on an intermediate device including an opening in a sacrificial dielectric layer, depositing a conductive metal over the liner and in the opening, removing a portion of the conductive metal while preserving the liner and a thickness of the sacrificial dielectric layer, removing a first portion of the liner by etching, wherein the liner is recessed into the opening, depositing a plurality of metallic tunnel junction layers, forming a hardmask on the plurality of metallic tunnel junction layers, and patterning the metallic tunnel junction layers to form a metallic tunnel junction stack and simultaneously clear a second portion of the liner and a portion the sacrificial dielectric layer.

    SACRIFICIAL BUFFER LAYER FOR METAL REMOVAL AT A BEVEL EDGE OF A SUBSTRATE
    20.
    发明申请
    SACRIFICIAL BUFFER LAYER FOR METAL REMOVAL AT A BEVEL EDGE OF A SUBSTRATE 有权

    公开(公告)号：US20210013400A1

    公开(公告)日：2021-01-14

    申请号：US16506459

    申请日：2019-07-09

    Applicant: International Business Machines Corporation

    Inventor： Ashim Dutta ,  Saba Zare ,  Michael Rizzolo ,  Theodorus E. Standaert ,  Daniel Charles Edelstein

    IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16

    Abstract: A method of forming a semiconductor structure includes forming a dielectric layer surrounding contacts over a top surface and bevel edge of a substrate, forming a sacrificial buffer layer over the dielectric layer, removing portions of the sacrificial buffer layer formed over the dielectric layer on the top surface of the substrate, and patterning device structures including one or more metal layers over the contacts, wherein patterning the device structures removes portions of the metal layers formed over the top surface of the substrate leaving the metal layers on the bevel edge. The method also includes forming an encapsulation layer and performing a bevel dry etch to remove the encapsulation layer and the metal layers on the bevel edge. The bevel dry etch damages the sacrificial buffer layer on the bevel edge underneath the metal layers. The method further includes removing the damaged sacrificial buffer layer from the bevel edge.

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