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    PHOTONICS DEVICE AND CMOS DEVICE HAVING A COMMON GATE
    11.
    发明申请
    PHOTONICS DEVICE AND CMOS DEVICE HAVING A COMMON GATE 有权
    光电设备和具有普通门的CMOS器件

    公开(公告)号：US20140191326A1

    公开(公告)日：2014-07-10

    申请号：US14015493

    申请日：2013-08-30

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  William M. J. Green ,  Steven M. Shank ,  Yurii A. Vlasov

    IPC: H01L27/092

    CPC classification number: H01L27/0922 ,  H01L21/28255 ,  H01L21/823437 ,  H01L21/84 ,  H01L27/0617 ,  H01L27/14 ,  H01L31/18 ,  H01L31/1808 ,  Y02E10/50

    Abstract: A semiconductor chip having a photonics device and a CMOS device which includes a photonics device portion and a CMOS device portion on a semiconductor chip; a metal or polysilicon gate on the CMOS device portion, the metal or polysilicon gate having a gate extension that extends toward the photonics device portion; a germanium gate on the photonics device portion such that the germanium gate is coplanar with the metal or polysilicon gate, the germanium gate having a gate extension that extends toward the CMOS device portion, the germanium gate extension and metal or polysilicon gate extension joined together to form a common gate; spacers formed on the germanium gate and the metal or polysilicon gate; and nitride encapsulation formed on the germanium gate.

    Abstract translation: 一种具有光子器件和CMOS器件的半导体芯片，其包括半导体芯片上的光子器件部分和CMOS器件部分; 在CMOS器件部分上的金属或多晶硅栅极，金属或多晶硅栅极具有朝向光子器件部分延伸的栅极延伸; 在光子器件部分上的锗栅极，使得锗栅极与金属或多晶硅栅极共面，锗栅极具有朝向CMOS器件部分延伸的栅极延伸，锗栅极延伸和金属或多晶硅栅极延伸部连接到一起 形成共同门; 在锗栅极和金属或多晶硅栅极上形成的间隔物; 并且在锗栅上形成氮化物封装。

    Germanium Photodetector
    12.
    发明申请
    Germanium Photodetector 有权

    公开(公告)号：US20140134790A1

    公开(公告)日：2014-05-15

    申请号：US14104563

    申请日：2013-12-12

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  Jeehwan Kim ,  Jin-Hong Park ,  Yurii A. Vlasov

    IPC: H01L31/18

    CPC classification number: H01L31/1808 ,  H01L31/1085 ,  Y02E10/50

    Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.

    Germanium Photodetector
    13.
    发明申请
    Germanium Photodetector 有权
    锗光检测器

    公开(公告)号：US20140134789A1

    公开(公告)日：2014-05-15

    申请号：US14104561

    申请日：2013-12-12

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  Jeehwan Kim ,  Jin-Hong Park ,  Yurii A. Vlasov

    IPC: H01L31/18

    CPC classification number: H01L31/1808 ,  H01L31/1085 ,  Y02E10/50

    Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.

    Abstract translation: 一种形成光检测器件的方法包括：在基片上形成绝缘体层，在绝缘体层和一部分基底上形成锗（Ge）层，在Ge层上形成第二绝缘层，构图Ge层，形成 在所述第二绝缘体层上的封盖绝缘体层和所述第一绝缘体层的一部分，加热所述器件以使所述Ge层结晶，得到单晶Ge层，在所述单晶Ge层中注入n型离子，将所述器件加热至 在单晶Ge层中激活n型离子，以及形成电连接到单晶n型Ge层的电极。

    STRESS ENGINEERED MULTI-LAYERS FOR INTEGRATION OF CMOS AND Si NANOPHOTONICS
    14.
    发明申请
    STRESS ENGINEERED MULTI-LAYERS FOR INTEGRATION OF CMOS AND Si NANOPHOTONICS 有权
    用于集成CMOS和Si纳米光子的应力工程多层

    公开(公告)号：US20140091374A1

    公开(公告)日：2014-04-03

    申请号：US13629910

    申请日：2012-09-28

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Solomon Assefa ,  Tymon Barwicz ,  Swetha Kamlapurkar ,  Marwan H. Khater ,  Steven M. Shank ,  Yurii A. Vlasov

    IPC: H01L27/14 ,  H01L31/18

    CPC classification number: H01L31/1136 ,  H01L27/1443

    Abstract: A method of forming an integrated photonic semiconductor structure having a photonic device and a CMOS device may include depositing a first silicon nitride layer having a first stress property over the photonic device, depositing an oxide layer having a stress property over the deposited first silicon nitride layer, and depositing a second silicon nitride layer having a second stress property over the oxide layer. The deposited first silicon nitride layer, the oxide layer, and the second silicon nitride layer encapsulate the photonic device.

    Abstract translation: 形成具有光子器件和CMOS器件的集成光子半导体结构的方法可以包括在光子器件上沉积具有第一应力特性的第一氮化硅层，在沉积的第一氮化硅层上沉积具有应力特性的氧化物层 并且在所述氧化物层上沉积具有第二应力特性的第二氮化硅层。 沉积的第一氮化硅层，氧化物层和第二氮化硅层封装光子器件。

    Predicting Therapeutic Targets for Patients UNresponsive to a Targeted Therapeutic
    19.
    发明申请
    Predicting Therapeutic Targets for Patients UNresponsive to a Targeted Therapeutic 审中-公开

    公开(公告)号：US20180046771A1

    公开(公告)日：2018-02-15

    申请号：US15236495

    申请日：2016-08-15

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  Geoffrey H. Siwo ,  Gustavo A. Stolovitzky

    IPC: G06F19/00 ,  G06N7/00 ,  G06F19/18

    CPC classification number: G16H50/20 ,  G16B20/00 ,  G16B20/30 ,  Y02A90/26

    Abstract: Embodiments may provide the capability to identify genes or biological processes that may be targeted by other therapeutics in a group of individuals who are less likely to benefit from a specific targeted therapeutic. For example, a method may comprise receiving an indication of a biomarker or biological characteristic to be used to stratify patients into those who can benefit from a specified therapy or intervention versus those who have less or no benefit, computing an impact of the genomic state of at least one gene on survival or clinical progression of patients in the two groups, generating a ranking of a differential impact on survival for each of the at least one gene in the two groups, and based on the generated ranking, identifying genes whose state is more important to survival in the group who do not benefit from the therapy or intervention.

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