中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

19 records (took 0.02 seconds)

    METHOD FOR PRODUCING A BURIED CAVITY STRUCTURE
    11.
    发明申请
    METHOD FOR PRODUCING A BURIED CAVITY STRUCTURE 审中-公开

    公开(公告)号：US20190027399A1

    公开(公告)日：2019-01-24

    申请号：US16029237

    申请日：2018-07-06

    Applicant: Infineon Technologies AG

    Inventor： Ines Uhlig ,  Kerstin Kaemmer ,  Norbert Thyssen

    IPC: H01L21/762 ,  H01L21/306

    Abstract: In accordance with an embodiment, a method for producing a buried cavity structure includes providing a mono-crystalline semiconductor substrate, producing a doped volume region in the mono-crystalline semiconductor substrate, wherein the doped volume region has an increased etching rate for a first etchant by comparison with an adjoining, undoped or more lightly doped material of the monocrystalline semiconductor substrate, forming an access opening to the doped volume region, and removing the doped semiconductor material in the doped volume region using the first etchant through the access opening to obtain the buried cavity structure.

    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    18.
    发明申请
    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
    制造半导体器件和半导体器件的方法

    公开(公告)号：US20150340277A1

    公开(公告)日：2015-11-26

    申请号：US14283242

    申请日：2014-05-21

    Applicant: Infineon Technologies AG

    Inventor： Christian Kuehn ,  Martin Bartels ,  Henning Feick ,  Dirk Offenberg ,  Anton Steltenpohl ,  Hans Taddiken ,  Ines Uhlig

    IPC: H01L21/762 ,  H01L29/06

    CPC classification number: H01L21/76237 ,  H01L21/26506 ,  H01L21/2652 ,  H01L21/26586 ,  H01L29/0607 ,  H01L29/0649

    Abstract: A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.

    Abstract translation: 根据各种实施例的用于制造半导体器件的方法可以包括：在半导体衬底的第一区域中形成开口，所述开口具有至少一个侧壁和底部; 将掺杂剂原子注入到所述开口的至少一个侧壁和底部中; 将所述半导体衬底的与所述第一区域横向相邻的第二区域的至少一部分配置为非晶区域或多晶区域中的至少一个; 以及在半导体衬底的第一和第二区域中的至少一个上形成互连。

    SWITCHING DEVICE, A COMMUNICATION DEVICE, AND A METHOD FOR PROCESSING A CARRIER
    19.
    发明申请
    SWITCHING DEVICE, A COMMUNICATION DEVICE, AND A METHOD FOR PROCESSING A CARRIER 有权
    切换装置，通信装置以及处理载体的方法

    公开(公告)号：US20150222317A1

    公开(公告)日：2015-08-06

    申请号：US14172925

    申请日：2014-02-05

    Applicant: Infineon Technologies AG

    Inventor： Christian Kuehn ,  Martin Bartels ,  Henning Feick ,  Dirk Offenberg ,  Anton Steltenpohl ,  Hans Taddiken ,  Ines Uhlig

    IPC: H04B1/44

    CPC classification number: H04B1/44 ,  H01L21/324 ,  H01L29/1079 ,  H01L29/78

    Abstract: According to various embodiments, a switching device may include: an antenna terminal; a switch including a first switch terminal and a second switch terminal, the first switch terminal coupled to the antenna terminal, the switch including at least one transistor at least one of over or in a silicon region including an oxygen impurity concentration of smaller than about 3×1017 atoms per cm3; and a transceiver terminal coupled to the second switch terminal, wherein the transceiver terminal is at least one of configured to provide a signal received via the antenna terminal or configured to receive a signal to be transmitted via the antenna terminal.

    Abstract translation: 根据各种实施例，开关装置可以包括：天线端子; 包括第一开关端子和第二开关端子的开关，所述第一开关端子耦合到所述天线端子，所述开关包括至少一个晶体管，所述至少一个晶体管至少包括氧区杂质浓度小于约3的硅区域， ×1017原子/ cm3; 以及耦合到所述第二开关终端的收发机终端，其中所述收发机终端被配置为提供经由所述天线终端接收的或被配置为接收经由所述天线终端发送的信号中的至少一个。

Patent Agency Ranking