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    High-Frequency Switching Circuit
    11.
    发明申请
    High-Frequency Switching Circuit 审中-公开
    高频开关电路

    公开(公告)号：US20130278323A1

    公开(公告)日：2013-10-24

    申请号：US13918319

    申请日：2013-06-14

    Applicant: Infineon Technologies AG

    Inventor： Winfried Bakalski ,  Hans Taddiken ,  Nikolay Ilkov ,  Herbert Kebinger

    IPC: H03K17/16

    CPC classification number: H02M3/07 ,  H03K17/161 ,  H03K17/6871 ,  H03K2217/0018

    Abstract: A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.

    Abstract translation: 高频开关电路包括高频开关晶体管，其中高频信号路径经由高频开关晶体管的沟道路径延伸。 高频开关电路包括控制电路，并且控制电路被配置为根据由控制电路接收的控制信号将至少两个不同的偏置电位施加到高频开关晶体管的衬底。

    System and method for a directional coupler
    13.
    发明授权
    System and method for a directional coupler 有权

    公开(公告)号：US09947985B2

    公开(公告)日：2018-04-17

    申请号：US14804073

    申请日：2015-07-20

    Applicant: Infineon Technologies AG

    Inventor： Valentyn Solomko ,  Winfried Bakalski ,  Nikolay Ilkov

    IPC: H01P5/18 ,  H03H7/38 ,  H03H7/48

    CPC classification number: H01P5/184 ,  H03H7/48

    Abstract: In accordance with an embodiment, a method of operating a directional coupler includes determining a coupled power variation by applying an input signal at an input port of the directional coupler, applying a first impedance at a transmitted port of the directional coupler, measuring a first coupled power at a coupled port of the directional coupler after applying the first impedance, applying a second impedance at the transmitted port of the directional coupler, measuring a second coupled power after applying the second impedance, and determining a difference between the first coupled power and the second coupled power to form the coupled power variation.

    System and method for a radio frequency switch
    15.
    发明授权
    System and method for a radio frequency switch 有权
    无线电频率开关的系统和方法

    公开(公告)号：US09515645B2

    公开(公告)日：2016-12-06

    申请号：US14294757

    申请日：2014-06-03

    Applicant: Infineon Technologies AG

    Inventor： Winfried Bakalski ,  Nikolay Ilkov

    IPC: H04B1/44 ,  H03K17/16 ,  H03K3/012 ,  H04B1/00 ,  H04B1/04 ,  H04B1/18

    CPC classification number: H03K17/161 ,  H03F3/24 ,  H03K3/012 ,  H03K17/16 ,  H04B1/006 ,  H04B1/0458 ,  H04B1/18 ,  H04B1/44 ,  H04B2001/0408

    Abstract: In accordance with an embodiment, a circuit includes a plurality of switching networks coupled between a corresponding plurality of RF ports and a common RF port, and a control circuit. Each of the plurality of switching networks includes a first switch coupled between its corresponding RF port and the common RF port, and at least one of the plurality of switching networks includes a selectable network coupled between the first switch and the common RF port, such that the selectable network provides a DC path in a first state and a series capacitance in a second state.

    Abstract translation: 根据实施例，电路包括耦合在对应的多个RF端口和公共RF端口之间的多个交换网络以及控制电路。 多个交换网络中的每一个包括耦合在其对应的RF端口和公共RF端口之间的第一开关，并且多个交换网络中的至少一个交换网络包括耦合在第一交换机和公共RF端口之间的可选网络，使得 可选择的网络提供处于第一状态的DC路径和处于第二状态的串联电容。

    System and method for a low noise amplifier module
    17.
    发明授权
    System and method for a low noise amplifier module 有权
    低噪声放大器模块的系统和方法

    公开(公告)号：US09337775B1

    公开(公告)日：2016-05-10

    申请号：US14561789

    申请日：2014-12-05

    Applicant: Infineon Technologies AG

    Inventor： Nikolay Ilkov ,  Paulo Oliveira ,  Daniel Kehrer

    IPC: H03F3/181 ,  H03F1/02 ,  H03F3/19

    CPC classification number: H03F3/19 ,  H03F1/0261 ,  H03F3/191 ,  H03F2200/111 ,  H03F2200/249 ,  H03F2200/294 ,  H03F2200/39 ,  H03F2200/451 ,  H04B1/10

    Abstract: In accordance with an embodiment, a circuit includes a low noise amplifier transistor disposed on a first integrated circuit, a single pole multi throw (SPMT) switch disposed on a second integrated circuit, and a bypass switch coupled between a control node of the low noise amplifier transistor and an output node of the low noise amplifier transistor. The SPMT switch couples a plurality of module input terminals to a control node of the low noise amplifier transistor, and the bypass switch including a first switch coupled between the control node of the low noise amplifier transistor and an intermediate node, a second switch coupled between the intermediate node and the output node of the low noise amplifier transistor, and a third switch coupled between the intermediate node and a first reference node. The first integrated circuit and the second integrated circuit are disposed on a substrate.

    Abstract translation: 根据实施例，电路包括设置在第一集成电路上的低噪声放大器晶体管，设置在第二集成电路上的单极多掷（SPMT）开关，以及耦合在低噪声控制节点之间的旁路开关 放大器晶体管和低噪声放大器晶体管的输出节点。 SPMT开关将多个模块输入端子耦合到低噪声放大器晶体管的控制节点，并且旁路开关包括耦合在低噪声放大器晶体管的控制节点和中间节点之间的第一开关，第二开关耦合在 低噪声放大器晶体管的中间节点和输出节点，以及耦合在中间节点和第一参考节点之间的第三开关。 第一集成电路和第二集成电路设置在基板上。

    System and Method for a Low Noise Amplifier
    18.
    发明申请
    System and Method for a Low Noise Amplifier 有权
    低噪声放大器的系统和方法

    公开(公告)号：US20160056774A1

    公开(公告)日：2016-02-25

    申请号：US14462793

    申请日：2014-08-19

    Applicant: Infineon Technologies AG

    Inventor： Nikolay Ilkov ,  Paulo Oliveira ,  Winfried Bakalski ,  Daniel Kehrer

    IPC: H03F1/56 ,  H03F3/19

    CPC classification number: H03F1/565 ,  H03F1/0205 ,  H03F3/19 ,  H03F2200/213 ,  H03F2200/222 ,  H03F2200/252 ,  H03F2200/294 ,  H03F2200/421 ,  H03F2200/451

    Abstract: In accordance with an embodiment, a circuit includes a first signal path coupled between an input port and an output port, and a second coupled between the input port and the output port in parallel with the first signal path. The first signal path includes a low noise amplifier (LNA) having an input node coupled to the input port, and the second signal path includes a switch coupled between the input port and the output port.

    Abstract translation: 根据实施例，电路包括耦合在输入端口和输出端口之间的第一信号路径，以及耦合在输入端口和输出端口之间并与第一信号路径连接的第二信号路径。 第一信号路径包括具有耦合到输入端口的输入节点的低噪声放大器（LNA），并且第二信号路径包括耦合在输入端口和输出端口之间的开关。

    System and method for biasing an RF circuit
    20.
    发明授权
    System and method for biasing an RF circuit 有权

    公开(公告)号：US10291194B2

    公开(公告)日：2019-05-14

    申请号：US15728264

    申请日：2017-10-09

    Applicant: Infineon Technologies AG

    Inventor： Nikolay Ilkov ,  Andreas Baenisch ,  Peter Pfann ,  Hans-Dieter Wohlmuth

    IPC: H03G3/30 ,  H03F1/02 ,  H03F1/22 ,  H03F1/56 ,  H03F3/193 ,  H03F3/45 ,  H03B5/12

    Abstract: In accordance with an embodiment, a circuit includes: a replica input transistor, a first replica cascode transistor, an active current source, and an active cascode biasing circuit. The active current source is configured to set a current flowing through the first replica cascode transistor and the replica input transistor to a predetermined value by adjusting a voltage of a control node of the replica input transistor; and an active cascode biasing circuit including a first output coupled to the control node of the first replica cascode transistor, and the active cascode biasing circuit configured to set a drain voltage of the replica input transistor to a predetermined voltage by adjusting a voltage of the control node of the first replica cascode transistor.

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