公开(公告)号：US09984917B2

公开(公告)日：2018-05-29

申请号：US14283242

申请日：2014-05-21

Applicant: Infineon Technologies AG

Inventor： Christian Kuehn ,  Martin Bartels ,  Henning Feick ,  Dirk Offenberg ,  Anton Steltenpohl ,  Hans Taddiken ,  Ines Uhlig

IPC: H01L21/76 ,  H01L21/762 ,  H01L29/06 ,  H01L21/265

CPC classification number: H01L21/76237 ,  H01L21/26506 ,  H01L21/2652 ,  H01L21/26586 ,  H01L29/0607 ,  H01L29/0649

Abstract: A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.

公开(公告)号：US20170301721A1

公开(公告)日：2017-10-19

申请号：US15586498

申请日：2017-05-04

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14687 ,  H01L27/14806

Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

公开(公告)号：US12154921B2

公开(公告)日：2024-11-26

申请号：US17398147

申请日：2021-08-10

Applicant: Infineon Technologies AG

Inventor： Ines Uhlig ,  Kerstin Kaemmer ,  Dirk Offenberg ,  Norbert Thyssen

IPC: H01L27/146 ,  G02B5/04 ,  G03B30/00

Abstract: A device for an image sensor is provided. The device includes a semiconductor device having a photo-sensitive region and a metallization stack for electrically contacting the photo-sensitive region. The photo-sensitive region is configured to generate an electric signal based on incident light. Further, the device includes an optical stack formed on a surface of the semiconductor device and configured to guide the incident light towards the photo-sensitive region. The optical stack includes a plurality of regions stacked on top of each other. The plurality of regions includes a filter region configured to selectively transmit the incident light only in a target wavelength range.

公开(公告)号：US20230296994A1

公开(公告)日：2023-09-21

申请号：US17699650

申请日：2022-03-21

Applicant: Infineon Technologies AG

Inventor： Dirk Offenberg

IPC: G03F9/00

CPC classification number: G03F9/7088 ,  G03F9/7069 ,  G03F9/7084

Abstract: A method of aligning a lithographic layer on a semiconductor wafer comprises forming, in a first side of the semiconductor wafer, a first alignment structure from one or more first trenches. In some embodiments, the trenches are formed to a depth reaching to within about three micrometers from the second side of the semiconductor wafer, for example. In others, the wafer is thinned after the first alignment structure is formed, so that the trenches then reach to within about three micrometers from the second side of the semiconductor wafer. At least one lithographic layer is aligned on a second side of the semiconductor wafer by detecting the first alignment structure from the second side, using illumination in the visible spectrum.

公开(公告)号：US20200321388A1

公开(公告)日：2020-10-08

申请号：US16909745

申请日：2020-06-23

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

公开(公告)号：US10707362B2

公开(公告)日：2020-07-07

申请号：US15881100

申请日：2018-01-26

Applicant: Infineon Technologies AG

Inventor： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  Ines Uhlig ,  Thoralf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

IPC: H01L31/0352 ,  G01S7/4914 ,  H01L27/148

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

公开(公告)号：US20180151765A1

公开(公告)日：2018-05-31

申请号：US15881100

申请日：2018-01-26

Applicant: Infineon Technologies AG

Inventor： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  lnes Uhlig ,  ThoraIf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

IPC: H01L31/0352 ,  H01L27/148 ,  G01S7/491

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region

公开(公告)号：US10692921B2

公开(公告)日：2020-06-23

申请号：US16566171

申请日：2019-09-10

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

公开(公告)号：US10411060B2

公开(公告)日：2019-09-10

申请号：US15586498

申请日：2017-05-04

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

公开(公告)号：US09905715B2

公开(公告)日：2018-02-27

申请号：US14093172

申请日：2013-11-29

Applicant: Infineon Technologies AG

Inventor： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  Ines Uhlig ,  Thoralf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

IPC: H01L27/148 ,  H01L31/0352 ,  G01S7/491

CPC classification number: H01L31/035272 ,  G01S7/4914 ,  H01L27/14806

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.