公开(公告)号：US12142553B2

公开(公告)日：2024-11-12

申请号：US18138512

申请日：2023-04-24

Applicant: Intel Corporation

Inventor： Arnab Sarkar ,  Sujit Sharan ,  Dae-Woo Kim

IPC: H01L23/498 ,  H01L21/66 ,  H01L23/00 ,  H01L23/544 ,  H01L23/58 ,  H01L25/065 ,  H01L25/18

Abstract: Guard ring designs enabling in-line testing of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon. A metallization structure is disposed on the insulating layer. The metallization structure incudes conductive routing disposed in a dielectric material stack. The semiconductor structure also includes a first metal guard ring disposed in the dielectric material stack and surrounding the conductive routing. The first metal guard ring includes a plurality of individual guard ring segments. The semiconductor structure also includes a second metal guard ring disposed in the dielectric material stack and surrounding the first metal guard ring. Electrical testing features are disposed in the dielectric material stack, between the first metal guard ring and the second metal guard ring.

公开(公告)号：US20240006332A1

公开(公告)日：2024-01-04

申请号：US17856801

申请日：2022-07-01

Applicant: Intel Corporation

Inventor： Dimitrios Antartis ,  Nitin A. Deshpande ,  Siyan Dong ,  Omkar Karhade ,  Gwang-soo Kim ,  Shawna Liff ,  Siddhartha Mal ,  Debendra Mallik ,  Khant Minn ,  Haris Khan Niazi ,  Arnab Sarkar ,  Yi Shi ,  Botao Zhang

IPC: H01L23/544 ,  H01L23/00 ,  H01L23/48

CPC classification number: H01L23/544 ,  H01L24/08 ,  H01L23/481 ,  H01L2224/08145 ,  H01L2223/54426

Abstract: An integrated circuit (IC) device comprises a host component and an IC die directly bonded to the host component. The IC die comprises a substrate material layer and a die metallization level between the substrate material layer and host component. The IC die includes an upper die alignment fiducial between the die metallization level and host component. The upper die alignment fiducial at least partially overlaps one or more metallization features within the die metallization level. In embodiments, at least two orthogonal edges of the upper die alignment fiducial do not overlap any of the metallization features within the die metallization level. In embodiments, the IC die includes a lower die alignment fiducial between the substrate material layer and the die metallization level. The lower die alignment fiducial may at least partially overlap one or more second metallization features within a second die metallization level of the IC die.

公开(公告)号：US11257745B2

公开(公告)日：2022-02-22

申请号：US16641219

申请日：2017-09-29

Applicant: INTEL CORPORATION

Inventor： Aleksandar Aleksov ,  Veronica Strong ,  Kristof Darmawikarta ,  Arnab Sarkar

IPC: H05K1/00 ,  H05K1/03 ,  H05K1/09 ,  H05K1/11 ,  H05K1/18 ,  H05K3/02 ,  H05K3/10 ,  H05K3/40 ,  H05K3/46 ,  H01L21/00 ,  H01L21/02 ,  H01L21/31 ,  H01L21/44 ,  H01L21/48 ,  H01L21/56 ,  H01L21/66 ,  H01L21/70 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/8246 ,  H01L23/00 ,  H01L23/28 ,  H01L23/31 ,  H01L23/48 ,  H01L23/52 ,  H01L23/58 ,  H01L23/485 ,  H01L23/495 ,  H01L23/498 ,  H01L23/522 ,  G06K19/02 ,  G06K19/077 ,  H05K3/18

Abstract: A package substrate, comprising a package comprising a substrate, the substrate comprising a dielectric layer, a via extending to a top surface of the dielectric layer; and a bond pad stack having a central axis and extending laterally from the via over the first layer. The bond pad stack is structurally integral with the via, wherein the bond pad stack comprises a first layer comprising a first metal disposed on the top of the via and extends laterally from the top of the via over the top surface of the dielectric layer adjacent to the via. The first layer is bonded to the top of the via and the dielectric layer, and a second layer is disposed over the first layer. A third layer is disposed over the second layer. The second layer comprises a second metal and the third layer comprises a third metal. The second layer and the third layer are electrically coupled to the via.

公开(公告)号：US11257743B2

公开(公告)日：2022-02-22

申请号：US16542248

申请日：2019-08-15

Applicant: Intel Corporation

Inventor： Arnab Sarkar ,  Sujit Sharan ,  Dae-Woo Kim

IPC: H01L23/498 ,  H01L23/544 ,  H01L21/66 ,  H01L23/58 ,  H01L25/065 ,  H01L23/00 ,  H01L25/18

Abstract: Guard ring designs enabling in-line testing of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon. A metallization structure is disposed on the insulating layer. The metallization structure includes conductive routing disposed in a dielectric material stack. The semiconductor structure also includes a first metal guard ring disposed in the dielectric material stack and surrounding the conductive routing. The first metal guard ring includes a plurality of individual guard ring segments. The semiconductor structure also includes a second metal guard ring disposed in the dielectric material stack and surrounding the first metal guard ring. Electrical testing features are disposed in the dielectric material stack, between the first metal guard ring and the second metal guard ring.

公开(公告)号：US20190096798A1

公开(公告)日：2019-03-28

申请号：US15718012

申请日：2017-09-28

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Arnab Sarkar ,  Arghya Sain ,  Kristof Darmawikarta ,  Henning Braunisch ,  Prashant D. Parmar ,  Sujit Sharan ,  Johanna M. Swan ,  Feras Eid

IPC: H01L23/50 ,  H01L21/48 ,  H01L23/498

CPC classification number: H01L23/50 ,  G06F17/5068 ,  G06F17/5077 ,  G06F2217/40 ,  H01L21/4853 ,  H01L21/486 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/5225 ,  H01L23/5226 ,  H01L23/5286 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05083 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05164 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Aspects of the embodiments are directed to an IC chip that includes a substrate comprising a first metal layer, a second metal layer, and a ground plane residing on the first metal layer. The second metal layer can include a first signal trace, the first signal trace electrically coupled to a first signal pad residing in the first metal layer by a first signal via. The second metal layer can include a second signal trace, the second signal trace electrically coupled to a second signal pad residing in the first metal layer by a second signal via. The substrate can also include a ground trace residing in the second metal layer between the first signal trace and the second signal trace, the ground trace electrically coupled to the ground plane by a ground via. The vias coupled to the traces can include self-aligned or zero-misaligned vias.