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公开(公告)号：US20050031780A1
公开(公告)日：2005-02-10
申请号：US10873624
申请日：2004-06-23
Applicant: Isao Matsui
Inventor： Isao Matsui
IPC: C01B19/04 , B01J2/00 , B01J2/04 , B01J19/00 , B82Y30/00 , B82Y40/00 , B82Y99/00 , C01B33/027 , C01G23/07 , H01M4/02 , H01M4/36 , H01M4/38 , H01M4/40 , B05D7/00
Abstract: A method of forming a particle comprises the steps of: forming a droplet containing a first material; forming a core portion by heating the droplet to thermally decompose in a reaction vessel; and forming a shell portion which coats the core portion by heating a raw material gas containing a second material which differs from the first material to thermally decompose in the reaction vessel.
Abstract translation: 形成颗粒的方法包括以下步骤：形成包含第一材料的液滴; 通过加热液滴在反应容器中热分解形成核心部分; 并且通过加热含有与第一材料不同的第二材料的原料气体在反应容器中热分解而形成包覆芯部的壳部分。
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12.发明授权Semiconductor device manufacturing method using electrostatic chuck and semiconductor device manufacturing system 有权使用静电卡盘和半导体器件制造系统的半导体器件制造方法公开(公告)号：US06333246B1
公开(公告)日：2001-12-25
申请号：US09604722
申请日：2000-06-28
Applicant: Masaki Narita , Yukimasa Yoshida , Katsuaki Aoki , Hiroshi Fujita , Osamu Yamazaki , Toshimitsu Omine , Isao Matsui , Takashi O
Inventor： Masaki Narita , Yukimasa Yoshida , Katsuaki Aoki , Hiroshi Fujita , Osamu Yamazaki , Toshimitsu Omine , Isao Matsui , Takashi O
IPC: H01L2120
CPC classification number: H01J37/321 , C23C16/4401 , C23C16/50 , H01L21/31116
Abstract: A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the negative voltage, the substrate is stuck onto the electrostatic chuck, a process gas is introduced into the process chamber, discharge plasma is generated, and the substrate is processed as predetermined.
Abstract translation: 半导体器件制造方法包括以下步骤：将处理的基板放置在处理室中的基板支架上的静电卡盘上，并向静电卡盘施加负电压。 在施加负电压之后，将基板粘贴到静电卡盘上，将处理气体引入到处理室中，产生放电等离子体，并且如预定的那样处理基板。
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公开(公告)号：US5403630A
公开(公告)日：1995-04-04
申请号：US141636
申请日：1993-10-27
Applicant: Isao Matsui , Akio Ui
Inventor： Isao Matsui , Akio Ui
IPC: H01L21/205 , C23C16/40 , C23C16/44 , C23C16/452 , H01L21/31 , B05D3/06 , C23C16/00
CPC classification number: C23C16/402 , C23C16/452
Abstract: A vapor-phase growth method comprising the steps of introducing a silicon-containing gas and ozone into a reaction vessel containing a sample, and introducing excited oxygen obtained by exciting an oxygen gas or an oxygen-containing gas, into the reaction vessel at the same the as, before, or after the silicon-containing gas and the ozone are introduced into the reaction vessel. The silicon-containing gas and the ozone react, forming an intermediate product which can readily condense. The intermediate product reacts with the excited oxygen, thereby forming a thin insulating film which excels in step coverage and has good insulating property.
Abstract translation: 一种气相生长方法，包括以下步骤：将含硅气体和臭氧引入含有样品的反应容器中，并将通过将氧气或含氧气体激发而获得的激发氧引入反应容器中 将含硅气体和臭氧引入反应容器中之前，之前或之后。 含硅气体和臭氧反应，形成可以容易冷凝的中间产物。 中间产物与激发的氧反应，从而形成薄的绝缘膜，其具有优异的台阶覆盖性和良好的绝缘性能。
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公开(公告)号：US07999652B2
公开(公告)日：2011-08-16
申请号：US12339036
申请日：2008-12-18
Applicant: Ken Harada , Minoru Sakamaki , Isao Matsui
Inventor： Ken Harada , Minoru Sakamaki , Isao Matsui
IPC: H01C10/00
CPC classification number: H01C3/12
Abstract: In a flat plate type thick film resistor, an insulation performance is improved by excluding the nonuniformity of potential distribution on a wiring plane, which is generated when electric current flows in a resistance wire. Simultaneously, generation of noise depending on potential distribution and variation of stray capacitance around a resistor is suppressed. When the resistance wire having a constant thickness and uniform resistivity, which is formed on an insulating substrate, is connected to a pair electrode conductors that face to each other, in the way that the resistance wire is repetitively bent to the alternate side in zigzags, a potential gradient on the wiring plane, which is generated when electric current flows in the resistance wire, is constant by properly selecting the line width, the bending angle, and the spacing between bending vertexes of a resistance wire.
Abstract translation: 在平板型厚膜电阻器中，通过排除电流在电阻丝中流动时产生的布线面上的电位分布的不均匀性，可以提高绝缘性能。 同时，抑制电阻周围的电位分布和杂散电容的变化产生噪声。 当形成在绝缘基板上的具有恒定厚度和均匀电阻率的电阻线连接到彼此相对的一对电极导体时，电阻线以锯齿形重复弯曲到另一侧， 通过适当地选择线宽，弯曲角度和电阻丝的弯曲顶点之间的间隔，在电阻线中电流产生的布线平面上的电位梯度是恒定的。
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公开(公告)号：US07678326B2
公开(公告)日：2010-03-16
申请号：US11767886
申请日：2007-06-25
Applicant: Isao Matsui
Inventor： Isao Matsui
CPC classification number: B01J19/00 , B01J2219/00123 , B01J2219/00164 , Y10S977/81 , Y10S977/811 , Y10S977/824
Abstract: An apparatus for manufacturing fine particles includes a reactor; a first inlet part including at least one port introducing a reactive gas flow containing a fine particle source material; a second inlet part including at least one port introducing a diluting gas flow; a heater exciting the fine particle source material in the reactive gas flow; a first plate including through-holes which substantially equalize a flow rate of the reactive gas flow with respect to a cross section of a flow channel; a second plate including through-holes which substantially equalize a flow rate of the diluting gas flow with respect to a cross section of a flow channel; a gas exhaust port provided in a merging region where the reactive gas flow passed through the first plate and the diluting gas flow passed through the second plate are merged; and a collector which collects fine particles.
Abstract translation: 制造微粒子的装置包括：反应器; 第一入口部分，其包括引入含有细颗粒源材料的反应气流的至少一个端口; 第二入口部分，其包括引入稀释气体流的至少一个端口; 加热器激发反应性气体流中的细颗粒源材料; 第一板，其包括基本上相等于流动通道的横截面的反应气流的流量的通孔; 第二板，其包括使稀释气体流相对于流路的截面大致相等的通孔; 设置在通过第一板的反应性气体流和通过第二板的稀释气体流的合流区域中的排气口被合并; 和收集细颗粒的收集器。
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Patent Agency Ranking
公开(公告)号：US20090174523A1
公开(公告)日：2009-07-09
申请号：US12339036
申请日：2008-12-18
Applicant: Ken HARADA , Minoru Sakamaki , Isao Matsui
Inventor： Ken HARADA , Minoru Sakamaki , Isao Matsui
IPC: H01C3/18
CPC classification number: H01C3/12
Abstract: In a flat plate type thick film resistor, an insulation performance is improved by excluding the nonuniformity of potential distribution on a wiring plane, which is generated when electric current flows in a resistance wire. Simultaneously, generation of noise depending on potential distribution and variation of stray capacitance around a resistor is suppressed. When the resistance wire having a constant thickness and uniform resistivity, which is formed on an insulating substrate, is connected to a pair electrode conductors that face to each other, in the way that the resistance wire is repetitively bent to the alternate side in zigzags, a potential gradient on the wiring plane, which is generated when electric current flows in the resistance wire, is constant by properly selecting the line width, the bending angle, and the spacing between bending vertexes of a resistance wire.
Abstract translation: 在平板型厚膜电阻器中，通过排除电流在电阻丝中流动时产生的布线面上的电位分布的不均匀性，可以提高绝缘性能。 同时，抑制电阻周围的电位分布和杂散电容的变化产生噪声。 当形成在绝缘基板上的具有恒定厚度和均匀电阻率的电阻线连接到彼此相对的一对电极导体时，电阻线以锯齿形重复弯曲到另一侧， 通过适当地选择线宽，弯曲角度和电阻丝的弯曲顶点之间的间隔，在电阻线中电流产生的布线平面上的电位梯度是恒定的。
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公开(公告)号：US20080075931A1
公开(公告)日：2008-03-27
申请号：US11888510
申请日：2007-08-01
Applicant: Isao Matsui
Inventor： Isao Matsui
CPC classification number: G11B5/7325 , B82Y25/00 , G11B5/653 , G11B5/8404 , H01F1/009 , H01F10/123 , Y10T428/24752
Abstract: A magnetic film comprises a platinum layer having a (001) plane orientation and an island-shaped iron-platinum crystalline arranged on the platinum layer and having a (001) plane orientation parallel to the (001) plane orientation of the platinum layer, wherein the island-shaped iron-platinum crystalline has a composition region consisting of 50 atomic % of each of iron and platinum and exhibits a perpendicular magnetic anisotropy having a high coercive force in a direction perpendicular to the surface of the platinum layer.
Abstract translation: 磁性膜包括布置在铂层上并具有（001）面取向平行于铂层的（001）面取向的（001）面取向的铂层和岛状铁 - 铂晶体，其中 岛状铁 - 铂晶体具有由铁和铂各自为50原子％组成的组成区域，并且在垂直于铂层表面的方向上具有高矫顽力的垂直磁各向异性。
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公开(公告)号：US20080053264A1
公开(公告)日：2008-03-06
申请号：US11892904
申请日：2007-08-28
Applicant: Isao Matsui , Yota Uesaka
Inventor： Isao Matsui , Yota Uesaka
IPC: B62D1/187
CPC classification number: B62D1/184
Abstract: An adjustable steering apparatus includes: a movable bracket to which a steering jacket having a steering wheel is fixed and to which a movable telescopic member having a tooth portion is fixedly mounted; a stationary bracket which is disposed externally of the movable bracket and fixed to a vehicle body, and to which a stationary tilt member having a tooth portion is fixedly mounted; a movable tilt member having a tooth portion meshingly engageable with the tooth portion of the stationary tilt member; and a stationary telescopic member having a tooth portion meshingly engageable with the tooth portion of the movable telescopic member. Both the movable tilt member and the stationary tilt member have openings. The tooth portion of the stationary telescopic member is designed to be meshed with the tooth portion of the movable telescopic member as penetrating through the movable tilt member and stationary tilt member.
Abstract translation: 一种可调节转向装置，包括：可移动支架，具有方向盘的转向护套固定到该固定支架上，具有齿部的可移动伸缩构件被固定地安装到该支架上; 固定支架，其设置在所述可移动支架的外部并固定到车体，并且固定地安装有具有齿部的固定倾斜构件; 可移动倾斜构件，其具有与所述固定倾斜构件的齿部可啮合地啮合的齿部; 以及具有与所述可移动伸缩构件的所述齿部啮合的齿部的固定伸缩构件。 可移动倾斜构件和固定倾斜构件都具有开口。 固定伸缩构件的齿部被设计成与可移动的伸缩构件的齿部相啮合，穿过可动倾斜构件和静止倾斜构件。
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公开(公告)号：US20070252313A1
公开(公告)日：2007-11-01
申请号：US11806298
申请日：2007-05-31
Applicant: Isao Matsui
Inventor： Isao Matsui
IPC: C21B7/22
CPC classification number: B82Y30/00 , B01J6/008 , B01J12/02 , B01J23/745 , B01J23/75 , B01J23/755 , B01J37/086 , B01J2219/0009 , B01J2219/00094 , B22F9/305
Abstract: A particle producing apparatus includes a reaction container, an introduction portion for introducing a source gas and a reaction inhibitor generating gas into the reaction container, an inert gas introduction portion for introducing a carrier gas into the reaction container, a heater provided on the reaction container, and an exhaust portion. The growth of particles is controlled using a particle producing reaction and a reverse reaction.
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公开(公告)号：US07247188B2
公开(公告)日：2007-07-24
申请号：US10695788
申请日：2003-10-30
Applicant: Isao Matsui
Inventor： Isao Matsui
CPC classification number: B82Y30/00 , B01J6/008 , B01J12/02 , B01J23/745 , B01J23/75 , B01J23/755 , B01J37/086 , B01J2219/0009 , B01J2219/00094 , B22F9/305
Abstract: A particle producing apparatus includes a reaction container, an introduction portion for introducing a source gas and a reaction inhibitor generating gas into the reaction container, an inert gas introduction portion for introducing a carrier gas into the reaction container, a heater provided on the reaction container, and an exhaust portion. The growth of particles is controlled using a particle producing reaction and a reverse reaction.
Abstract translation: 一种颗粒生产设备包括反应容器，用于将源气体引入的引入部分和产生气体的反应抑制剂引入到反应容器中，用于将载气引入反应容器的惰性气体引入部分，设置在反应容器上的加热器 ，和排气部。 使用产生粒子的反应和反应来控制粒子的生长。
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