摘要:
Disclosed herein is an organic electroluminescent (EL) device comprising an intermediate layer made of at least one selected from a hole blocking material and an electron blocking material.
摘要:
A system and method are provided for booting a computing device using a NAND flash memory. Boot code stored in the NAND flash memory is transferred to a RAM for execution by the CPU. Operating system program stored in the NAND flash memory is transferred to a system memory for execution therefrom by the CPU after system boot.
摘要:
An anti-miss alarm system, method, and a shoe supporting the anti-miss alarm is provided. The anti-miss alarm method receives a radio signal emitted from a portable article having an interface for a wireless personal area network (WPAN), extracts channel status information from the radio signal, calculates a relative distance from the portable article based on the channel status information, and outputs alarm signals in a stepwise manner according to the relative distance. A mobile terminal includes an interface of a WPAN, a control unit, and an output unit. The interface receives radio signals emitted from a portable article having a similar interface. The control unit extracts channel status information from the radio signals and estimates a relative distance from the portable article based on the channel status information. The output unit controllably outputs alarm signals in a stepwise manner according to the relative distance. The shoe is similar
摘要:
Disclosed are a side emitting lens, a light emitting device using the side emitting lens, a mold assembly for preparing the side emitting lens and a method for preparing the side emitting using the mold assembly. The lens of the present invention has a simple structure so the lens is easily fabricated through a molding process. If the lens is applied to the light emitting member, light generated from the light emitting member is laterally guided by means of the lens.
摘要:
An IGBT includes a first silicon region over a collector region, and a plurality of pillars of first and second conductivity types arranged in an alternating manner over the first silicon region. The IGBT further includes a plurality of well regions each extending over and being in electrical contact with one of the pillars of the first conductivity type, and a plurality of gate electrodes each extending over a portion of a corresponding well region. The physical dimensions of each of the first and second conductivity type pillars and the doping concentration of charge carriers in each of the first and second conductivity type pillars are selected so as to create a charge imbalance between a net charge in each pillar of first conductivity and a net charge in its adjacent pillar of the second conductivity type.
摘要:
A MEMS switch and a method of manufacturing the same are disclosed. The MEMS switch includes: a substrate including a trench, a ground line and a signal line having an opened portion; a moving plate separated from the substrate at a predetermined space and including a contact member for connecting an electrode plate and the opened portion and having a deep corrugate to insert the trench; and a supporting member for supporting the moving plate. Such a MEMS switch prevents the thermal expansion and the stiction problem.
摘要:
Provided herein are methods of preparing conductive particles including hydrophilizing the surface of polymer particles by a low-temperature plasma treatment; and coating the hydrophilized surface of the polymer particles with a conductive metal layer to form the conductive particles. The methods provided herein may provide desirable adhesion between the conductive metal layer and the polymer particles and may minimize the aggregation of the polymer particles during plating. As a result, methods disclosed herein may provide for conductive particles having desirable electrical conductivity and reliability.
摘要:
The present invention relates to a light emitting device for preventing cross-talk phenomenon. The light emitting device includes a plurality of pixels and a scan driving circuit. The pixels are formed in cross areas of data lines and scan lines. The scan driving circuit couples at least one scan line to a first voltage source having a first voltage during a first time, couples the scan line to a second voltage source having a second voltage during a second time, and couples the scan line to a third voltage source having a third voltage during a third time. Here, the second voltage is a voltage between the first voltage and the third voltage. The light emitting device discharges the data lines to the same level as data current irrespective of precharge current, and thus cross-talk phenomenon is not occurred to the light emitting device.
摘要:
A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.
摘要:
Provided is a parallel program execution method in which in order to reflect structural characteristics of a multithreaded processor-based parallel system, performance of the parallel loop is predicted while compiling or executing using a performance prediction model and then the parallel program is executed using an adaptive execution method. The method includes the steps of: generating as many threads as the number of physical processors of the parallel system in order to execute at least one parallel loop contained in the parallel program; by the generated threads, executing at least one single loop of each parallel loop; measuring an execution time, the number of executed instructions, and the number of cache misses for each parallel loop; determining an execution mode of each parallel loop by determining the number of threads used to execute each parallel loop based on the measured values; and allocating the threads to each physical processor according to the result of the determination to execute each parallel loop. The method significantly improves the performance of the parallel program driven in the multithreaded processor-based parallel system.