利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

40 条记录 (耗时 0.035 秒)

    Vertical light emitting device
    11.
    发明授权
    Vertical light emitting device 失效
    垂直发光装置

    公开(公告)号：US08564009B2

    公开(公告)日：2013-10-22

    申请号：US13188791

    申请日：2011-07-22

    申请人： Bok-ki Min ,  Young-soo Park ,  Su-hee Chae ,  Jun-youn Kim ,  Hyun-gi Hong ,  Young-jo Tak

    发明人： Bok-ki Min ,  Young-soo Park ,  Su-hee Chae ,  Jun-youn Kim ,  Hyun-gi Hong ,  Young-jo Tak

    IPC分类号： H01L33/42

    CPC分类号： H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L2933/0091

    摘要： According to an example embodiment, a vertical light emitting device (LED) includes a semiconductor layer including an active layer configured to emitting light, a first electrode on a first side of the semiconductor layer, and a second electrode on a second side of the semiconductor layer opposite to the first electrode. At least one of the first and second electrodes includes a metal electrode pattern and a transparent electrode pattern. The transparent electrode pattern is in a region between segment electrodes of the metal electrode pattern. The transparent electrode pattern is electrically connected to the metal electrode pattern.

    摘要翻译： 根据示例性实施例，垂直发光器件（LED）包括半导体层，其包括被配置为发光的有源层，半导体层的第一侧上的第一电极和半导体的第二侧上的第二电极 层与第一电极相对。 第一和第二电极中的至少一个包括金属电极图案和透明电极图案。 透明电极图案位于金属电极图案的段电极之间的区域中。 透明电极图形电连接到金属电极图案。

    VERTICAL LIGHT EMITTING DEVICE
    12.
    发明申请
    VERTICAL LIGHT EMITTING DEVICE 失效
    垂直发光装置

    公开(公告)号：US20120175662A1

    公开(公告)日：2012-07-12

    申请号：US13188791

    申请日：2011-07-22

    申请人： Bok-ki Min ,  Young-soo Park ,  Su-hee Chae ,  Jun-youn Kim ,  Hyun-gi Hong ,  Young-jo Tak

    发明人： Bok-ki Min ,  Young-soo Park ,  Su-hee Chae ,  Jun-youn Kim ,  Hyun-gi Hong ,  Young-jo Tak

    IPC分类号： H01L33/42

    CPC分类号： H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L2933/0091

    摘要： According to an example embodiment, a vertical light emitting device (LED) includes a semiconductor layer including an active layer configured to emitting light, a first electrode on a first side of the semiconductor layer, and a second electrode on a second side of the semiconductor layer opposite to the first electrode. At least one of the first and second electrodes includes a metal electrode pattern and a transparent electrode pattern. The transparent electrode pattern is in a region between segment electrodes of the metal electrode pattern. The transparent electrode pattern is electrically connected to the metal electrode pattern.

    摘要翻译： 根据示例性实施例，垂直发光器件（LED）包括半导体层，其包括被配置为发光的有源层，半导体层的第一侧上的第一电极和半导体的第二侧上的第二电极 层与第一电极相对。 第一和第二电极中的至少一个包括金属电极图案和透明电极图案。 透明电极图案位于金属电极图案的段电极之间的区域中。 透明电极图形电连接到金属电极图案。

    Method of manufacturing light emitting device
    15.
    发明授权
    Method of manufacturing light emitting device 有权
    制造发光器件的方法

    公开(公告)号：US08003419B2

    公开(公告)日：2011-08-23

    申请号：US12458900

    申请日：2009-07-27

    申请人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

    发明人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.

    摘要翻译： 提供了一种使用晶片接合方法从大面积接合晶片制造发光器件的方法。 该方法可以包括在多个生长衬底上形成多个半导体层，每个半导体层具有发射光的有源区。 该方法还可以包括在其上形成半导体层的多个生长衬底布置在一个接合衬底上，并且通过后续处理同时处理在每个生长衬底上形成的每个半导体层。 接合晶片可以由减少或防止由于晶片材料（例如蓝宝石）和接合晶片之间的热膨胀系数的差异而导致的弯曲或翘曲的材料形成。 根据上述方法，由于可以通过一个处理来处理多个晶片，因此大量生产LED可能会降低制造成本。

    Method of manufacturing light emitting device
    18.
    发明申请
    Method of manufacturing light emitting device 有权
    制造发光器件的方法

    公开(公告)号：US20100124798A1

    公开(公告)日：2010-05-20

    申请号：US12458900

    申请日：2009-07-27

    申请人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-Seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

    发明人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-Seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

    IPC分类号： H01L21/28

    CPC分类号： H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.

    摘要翻译： 提供了一种使用晶片接合方法从大面积接合晶片制造发光器件的方法。 该方法可以包括在多个生长衬底上形成多个半导体层，每个半导体层具有发射光的有源区。 该方法还可以包括在其上形成半导体层的多个生长衬底布置在一个接合衬底上，并且通过后续处理同时处理在每个生长衬底上形成的每个半导体层。 接合晶片可以由减少或防止由于晶片材料（例如蓝宝石）和接合晶片之间的热膨胀系数的差异而导致的弯曲或翘曲的材料形成。 根据上述方法，由于可以通过一个处理来处理多个晶片，因此大量生产LED可能会降低制造成本。