公开(公告)号：US08003419B2

公开(公告)日：2011-08-23

申请号：US12458900

申请日：2009-07-27

申请人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

发明人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.

摘要翻译： 提供了一种使用晶片接合方法从大面积接合晶片制造发光器件的方法。 该方法可以包括在多个生长衬底上形成多个半导体层，每个半导体层具有发射光的有源区。 该方法还可以包括在其上形成半导体层的多个生长衬底布置在一个接合衬底上，并且通过后续处理同时处理在每个生长衬底上形成的每个半导体层。 接合晶片可以由减少或防止由于晶片材料（例如蓝宝石）和接合晶片之间的热膨胀系数的差异而导致的弯曲或翘曲的材料形成。 根据上述方法，由于可以通过一个处理来处理多个晶片，因此大量生产LED可能会降低制造成本。

公开(公告)号：US08222663B2

公开(公告)日：2012-07-17

申请号：US12458797

申请日：2009-07-23

申请人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

发明人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/12

摘要： Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.

摘要翻译： 提供了通过使用晶片接合方法制造的发光二极管（LED）和通过使用晶片接合方法制造LED的方法。 晶片接合方法可以包括在半导体层和接合基板之间插入由金属形成的应力松弛层。 当使用应力松弛层时，由于金属的柔韧性，接合基板和生长基板之间的应力可能被抵消，因此可以减少或防止接合基板的弯曲或翘曲。

公开(公告)号：US20100124798A1

公开(公告)日：2010-05-20

申请号：US12458900

申请日：2009-07-27

申请人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-Seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

发明人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-Seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

IPC分类号： H01L21/28

CPC分类号： H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.

摘要翻译： 提供了一种使用晶片接合方法从大面积接合晶片制造发光器件的方法。 该方法可以包括在多个生长衬底上形成多个半导体层，每个半导体层具有发射光的有源区。 该方法还可以包括在其上形成半导体层的多个生长衬底布置在一个接合衬底上，并且通过后续处理同时处理在每个生长衬底上形成的每个半导体层。 接合晶片可以由减少或防止由于晶片材料（例如蓝宝石）和接合晶片之间的热膨胀系数的差异而导致的弯曲或翘曲的材料形成。 根据上述方法，由于可以通过一个处理来处理多个晶片，因此大量生产LED可能会降低制造成本。

公开(公告)号：US20100123158A1

公开(公告)日：2010-05-20

申请号：US12458797

申请日：2009-07-23

申请人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

发明人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

IPC分类号： H01L33/00 ,  H01L21/50

CPC分类号： H01L33/0079 ,  H01L33/12

摘要： Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.

摘要翻译： 提供了通过使用晶片接合方法制造的发光二极管（LED）和通过使用晶片接合方法制造LED的方法。 晶片接合方法可以包括在半导体层和接合基板之间插入由金属形成的应力松弛层。 当使用应力松弛层时，由于金属的柔韧性，接合基板和生长基板之间的应力可能被抵消，因此可以减少或防止接合基板的弯曲或翘曲。

公开(公告)号：US20110291120A1

公开(公告)日：2011-12-01

申请号：US13109263

申请日：2011-05-17

申请人： Young-jo Tak ,  Young-soo Park ,  Su-hee Chae ,  Bok-ki Min ,  Jun-youn Kim ,  Hyun-gi Hong ,  Jae-won Lee ,  Hyung-su Jeong

发明人： Young-jo Tak ,  Young-soo Park ,  Su-hee Chae ,  Bok-ki Min ,  Jun-youn Kim ,  Hyun-gi Hong ,  Jae-won Lee ,  Hyung-su Jeong

IPC分类号： H01L27/15 ,  H01L33/06

CPC分类号： H01L33/382 ,  H01L33/08 ,  H01L33/405 ,  H01L33/641 ,  H01L2933/0016

摘要： Example embodiments of the present invention relate to a light emitting device having a connection structure and a method of manufacturing the light emitting device. The method of manufacturing may include forming a light emitting region and electrode layers on a substrate in which a plurality of cell regions and a bridge for partially connecting the cell regions are disposed, thereby providing a light emitting device that controls stress with relative ease and integrates electrical connections between the cell regions.

摘要翻译： 本发明的示例性实施例涉及具有连接结构的发光器件和制造发光器件的方法。 制造方法可以包括在其上设置多个单元区域和用于部分连接单元区域的桥的基板上形成发光区域和电极层，从而提供相对容易地控制应力的发光装置 电池区之间的电连接。

公开(公告)号：US20110272712A1

公开(公告)日：2011-11-10

申请号：US12926854

申请日：2010-12-14

申请人： Hyung-su Jeong ,  Young-soo Park ,  Su-hee Chae ,  Bok-ki Min ,  Jun-youn Kim ,  Hyun-gi Hong ,  Young-jo Tak ,  Jae-won Lee

发明人： Hyung-su Jeong ,  Young-soo Park ,  Su-hee Chae ,  Bok-ki Min ,  Jun-youn Kim ,  Hyun-gi Hong ,  Young-jo Tak ,  Jae-won Lee

IPC分类号： H01L33/12 ,  H01L33/00

CPC分类号： H01L33/0025 ,  H01L27/156 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42

摘要： Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.

摘要翻译： 示例性实施例涉及包括图案化发光单元的发光器件和制造发光器件的方法。 发光器件包括在半导体层的顶部上的第一电极和在半导体层的底部上的第二电极，其中半导体层是由多个堆叠形成的图案阵列。 多个堆叠之间的空间填充有绝缘层，并且第一电极在绝缘层上。

公开(公告)号：US08592839B2

公开(公告)日：2013-11-26

申请号：US12926854

申请日：2010-12-14

申请人： Hyung-su Jeong ,  Young-soo Park ,  Su-hee Chae ,  Bok-ki Min ,  Jun-youn Kim ,  Hyun-gi Hong ,  Young-jo Tak ,  Jae-won Lee

发明人： Hyung-su Jeong ,  Young-soo Park ,  Su-hee Chae ,  Bok-ki Min ,  Jun-youn Kim ,  Hyun-gi Hong ,  Young-jo Tak ,  Jae-won Lee

IPC分类号： H01L29/205 ,  H01L33/00 ,  H01L29/207

CPC分类号： H01L33/0025 ,  H01L27/156 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42

摘要： Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.

摘要翻译： 示例性实施例涉及包括图案化发光单元的发光器件和制造发光器件的方法。 发光器件包括在半导体层的顶部上的第一电极和在半导体层的底部上的第二电极，其中半导体层是由多个堆叠形成的图案阵列。 多个堆叠之间的空间填充有绝缘层，并且第一电极在绝缘层上。

公开(公告)号：US20110127554A1

公开(公告)日：2011-06-02

申请号：US12801198

申请日：2010-05-27

申请人： Jae-won Lee ,  Bok-ki Min ,  Jun-youn Kim ,  Young-jo Tak ,  Hyung-su Jeong

发明人： Jae-won Lee ,  Bok-ki Min ,  Jun-youn Kim ,  Young-jo Tak ,  Hyung-su Jeong

IPC分类号： H01L33/46 ,  H01L33/00

CPC分类号： H01L33/60 ,  H01L33/007 ,  H01L33/10 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0016

摘要： A light emitting device may include a substrate, an n-type clad layer, an active layer, and a p-type clad layer. A concave-convex pattern having a plurality of grooves and a mesa between each of the plurality of grooves may be formed on the substrate, and a reflective layer may be formed on the surfaces of the plurality of grooves or the mesa between each of the plurality of grooves. Therefore, light generated in the active layer may be reflected by the reflective layer, and extracted to an external location.

摘要翻译： 发光器件可以包括衬底，n型覆盖层，有源层和p型覆盖层。 可以在基板上形成具有多个凹槽和每个凹槽之间的台面的凹凸图案，并且可以在多个凹槽或多个凹槽中的每一个之间的台面的表面上形成反射层 的凹槽。 因此，有源层中产生的光可以被反射层反射，并被提取到外部位置。

公开(公告)号：US08138510B2

公开(公告)日：2012-03-20

申请号：US12662925

申请日：2010-05-12

申请人： Young-jo Tak ,  Jun-youn Kim ,  Hyun-gi Hong ,  Jae-won Lee ,  Hyung-su Jeong

发明人： Young-jo Tak ,  Jun-youn Kim ,  Hyun-gi Hong ,  Jae-won Lee ,  Hyung-su Jeong

IPC分类号： H01L33/00 ,  H01L33/20 ,  H01L33/24

CPC分类号： H01L33/10 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/12

摘要： A gallium nitride (GaN) light emitting device and a method of manufacturing the same are provided, the method including sequentially forming a buffer layer and a first nitride layer on a silicon substrate, and forming a plurality of patterns by dry etching the first nitride layer. Each pattern includes a pair of sidewalls facing each other. A reflective layer is deposited on the first nitride layer so that one sidewall of the pair is exposed by the reflective layer. An n-type nitride layer that covers the first nitride layer is formed by horizontally growing an n-type nitride from the exposed sidewall, and a GaN-based light emitting structure layer is formed on the n-type nitride layer.

摘要翻译： 提供了一种氮化镓（GaN）发光器件及其制造方法，该方法包括在硅衬底上依次形成缓冲层和第一氮化物层，并通过干蚀刻第一氮化物层形成多个图案 。 每个图案包括彼此面对的一对侧壁。 反射层沉积在第一氮化物层上，使得该对的一个侧壁被反射层暴露。 通过从暴露的侧壁水平生长n型氮化物，形成覆盖第一氮化物层的n型氮化物层，并且在n型氮化物层上形成GaN基发光结构层。

公开(公告)号：US20110121330A1

公开(公告)日：2011-05-26

申请号：US12662925

申请日：2010-05-12

申请人： Young-jo Tak ,  Jun-youn Kim ,  Hyun-gi Hong ,  Jae-won Lee ,  Hyung-su Jeong

发明人： Young-jo Tak ,  Jun-youn Kim ,  Hyun-gi Hong ,  Jae-won Lee ,  Hyung-su Jeong

IPC分类号： H01L33/30 ,  H01L33/10 ,  H01L33/00

CPC分类号： H01L33/10 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/12

摘要： A gallium nitride (GaN) light emitting device and a method of manufacturing the same are provided, the method including sequentially forming a buffer layer and a first nitride layer on a silicon substrate, and forming a plurality of patterns by dry etching the first nitride layer. Each pattern includes a pair of sidewalls facing each other. A reflective layer is deposited on the first nitride layer so that one sidewall of the pair is exposed by the reflective layer. An n-type nitride layer that covers the first nitride layer is formed by horizontally growing an n-type nitride from the exposed sidewall, and a GaN-based light emitting structure layer is formed on the n-type nitride layer.

摘要翻译： 提供了一种氮化镓（GaN）发光器件及其制造方法，该方法包括在硅衬底上依次形成缓冲层和第一氮化物层，并通过干蚀刻第一氮化物层形成多个图案 。 每个图案包括彼此面对的一对侧壁。 反射层沉积在第一氮化物层上，使得该对的一个侧壁被反射层暴露。 通过从暴露的侧壁水平生长n型氮化物，形成覆盖第一氮化物层的n型氮化物层，并且在n型氮化物层上形成GaN基发光结构层。