-
11.发明授权Method of modifying a microchip layout data set to generate a predicted mask printed data set 失效修改微芯片布局数据集以产生预测的掩模印刷数据集的方法公开(公告)号：US06261724B1
公开(公告)日：2001-07-17
申请号：US09334367
申请日：1999-06-16
IPC分类号： G03F900
CPC分类号： G03F7/70433 , G03F1/36 , G03F7/70441
摘要： A method is presented here that enables one to improve the prediction for the printed structures of circuit patterns in a microchip, thereby potentially aiding in the design of the microchip circuitry. This method comprises the steps of determining, by applying process bias and corner curvature rules to a real mask image, a simulated structure for the mask used in optical projection lithography; and determining, by applying optical and process proximity correction rules to said simulated mask structure, a more accurate prediction for the structures printed on the wafer. Preferably the simulated mask structure is determined by applying a symmetric bias consistent with a mask build process to the real mask image, adjusting predetermined features of the real mask image such as corners or narrow lines, and applying a reverse symmetric bias to the adjusted real mask image.
摘要翻译： 这里呈现出一种可以改进对微芯片中电路图案的印刷结构的预测的方法，从而有助于微芯片电路的设计。 该方法包括以下步骤：通过将光学投影光刻中使用的掩模的模拟结构应用于实际掩模图像来确定加工偏压和拐角曲率规则; 以及通过对所述模拟掩模结构应用光学和过程接近校正规则来确定印刷在晶片上的结构的更准确的预测。 优选地，通过将与掩模构建处理一致的对称偏置应用于真实掩模图像来确定模拟掩模结构，调整真实掩模图像的预定特征，例如拐角或窄线，以及将反向对称偏压施加到经调整的真实掩模 图片。
-
公开(公告)号：US06258490B1
公开(公告)日：2001-07-10
申请号：US09350863
申请日：1999-07-09
IPC分类号： G03F900
摘要： A transmission controlled mask (TCM) for providing effective and accurate printing of images on a semiconductor wafer is defined. The transmission controlled mask (TCM) of the present invention includes opaque regions, clear regions, and transmission controlled (TC) regions, each region have different transmittance for reducing and/or eliminating the foreshortening which occurs in image printing. By employing the TCM of the present invention and adjusting the exposure time, images of lines and holes may be printed correctly with the same mask. The TCM of the present invention comprises a quartz substrate having a carbon layer and a chrome layer deposited on its surface.
摘要翻译： 定义了用于在半导体晶片上提供有效和准确的图像打印的传输控制掩模（TCM）。 本发明的透射控制掩模（TCM）包括不透明区域，透明区域和透射控制（TC）区域，每个区域具有不同的透射率，用于减少和/或消除在图像打印中发生的缩短。 通过采用本发明的TCM并调整曝光时间，可以用相同的掩模正确地印刷线和孔的图像。 本发明的TCM包括在其表面上沉积有碳层和铬层的石英基底。
-
公开(公告)号：US06425112B1
公开(公告)日：2002-07-23
申请号：US09335305
申请日：1999-06-17
IPC分类号： E06F1750
CPC分类号： G03F1/36 , G06F17/5081
摘要： A method and computer system are provided for checking integrated circuit designs for design rule violations. The method may include generating a working design data set, creating a wafer image data set, comparing the wafer image data set to the design rules to produce an error list and automatically altering the working design data set when the comparing indicates a design rule violation. The method further automatically repeats the creating, the comparing and the automatically altering until no design rule violations occur or no solution to the errors exists.
摘要翻译： 提供了一种用于检查设计规则违规的集成电路设计的方法和计算机系统。 该方法可以包括生成工作设计数据集，创建晶片图像数据集，将晶片图像数据集与设计规则进行比较以产生错误列表，并且当比较指示设计规则违反时自动改变工作设计数据集。 该方法进一步自动重复创建，比较和自动更改，直到没有设计规则违规发生或没有解决方案存在错误。
-
公开(公告)号：US06627361B2
公开(公告)日：2003-09-30
申请号：US09901241
申请日：2001-07-09
IPC分类号： G03F900
摘要： An assist feature is formed on a lithographic reticle or mask using a hybrid resist and an exposure dose such that only an annular area is effectively exposed having a width that is potentially less than the minimum feature size that can be resolved by the mask exposure tool to simultaneously or sequentially form both a feature of interest and an assist feature for enhancing imaging of the feature of interest when the feature is printed to a wafer. Since the assist feature can be imaged simultaneously with the feature of interest or multiple assist features imaged concurrently, possibly between closely spaced features, data volume and mask writing time are greatly reduced. The invention is particularly applicable to the scaling of contact holes for connections to active devices in extremely high density integrated circuits.
摘要翻译： 使用混合抗蚀剂和曝光剂量在光刻掩模版或掩模上形成辅助特征，使得只有环形区域被有效地暴露，其宽度可能小于可由掩模曝光工具解析的最小特征尺寸， 同时或顺序地形成感兴趣的特征和当将特征印刷到晶片时增强感兴趣特征的成像的辅助特征。 由于可以与感兴趣的特征或同时成像的多个辅助特征（可能在紧密间隔的特征之间）同时成像辅助特征，所以数据量和掩模写入时间被大大减少。 本发明特别适用于用于连接到极高密度集成电路中的有源器件的接触孔的缩放。
-
公开(公告)号：US6016357A
公开(公告)日：2000-01-18
申请号：US876931
申请日：1997-06-16
申请人： Timothy E. Neary , Edward W. Conrad , Orest Bula
发明人： Timothy E. Neary , Edward W. Conrad , Orest Bula
摘要： A method of repairing a semiconductor phase shift mask comprises first providing a semiconductor mask having a defect and then illuminating the mask to create an aerial image of the mask. Subsequently, the aerial image of the mask is analyzed and the defect in the mask is detected from the aerial image. An ideal mask image is defined and compared to the aerial image of the defective mask to determine the repair parameters. Unique parameters for repairing the mask defect are determined by utilizing the aerial image analysis and a look-up table having information on patch properties as a function of material deposition parameters. The mask is then repaired in accordance with the parameters to correct the mask defect. A patch of an attenuated material may be applied to the mask or a predetermined amount of material may be removed from the mask. The aerial image of the repair is analyzed to determine whether the repair sufficiently corrects the defect within predetermined tolerances.
摘要翻译： 修复半导体相移掩模的方法包括首先提供具有缺陷的半导体掩模，然后照亮掩模以产生掩模的空间图像。 随后，分析掩模的空中图像，并从空中图像中检测出掩模中的缺陷。 定义理想的掩模图像并将其与有缺陷的掩模的空间图像进行比较以确定修复参数。 用于修复掩模缺陷的唯一参数通过利用空中图像分析和具有作为材料沉积参数的函数的贴片特性信息的查找表来确定。 然后根据参数修复面罩以校正掩模缺陷。 衰减材料的贴片可以施加到掩模上，或者可以从掩模中去除预定量的材料。 分析修复的空中图像，以确定修复是否在预定公差范围内充分纠正缺陷。
-
公开(公告)号：US06383719B1
公开(公告)日：2002-05-07
申请号：US09081456
申请日：1998-05-19
IPC分类号： G03F720
摘要： Fine feature lithography is enhanced by selectively providing exposures to correct for effects such as foreshortening, corner rounding, nested to isolated print bias, feature size dependent bias, and other image biases in semiconductor processing. These results are achieved by increasing the local exposure dose in critical areas of specific images, such as line ends and corners. The general process incorporates techniques which tailor the exposure dose as a function of position to achieve the desired final image shape. The techniques include contrast enhancement layers (CEL), scanning optical beams, and exposures with different masks. In one embodiment the process of forming a pattern comprises the steps of providing a substrate having a photosensitive coating, exposing the center area of the pattern on the photosensitive coating with one mask, and exposing ends of the pattern on the photosensitive coating without exposing the center area with a second mask. The second exposure overlaps the first exposure and may extend beyond the pattern but the second dose is much lower than the first dose.
摘要翻译： 通过选择性地提供曝光以校正诸如缩短，拐角舍入，嵌套到隔离印刷偏移，特征尺寸依赖偏置和半导体处理中的其他图像偏移的效果来增强精细特征光刻。 这些结果通过增加特定图像的关键区域（例如线端和角）的局部曝光剂量来实现。 一般过程包括将曝光剂量定制为位置的函数以实现期望的最终图像形状的技术。 这些技术包括对比度增强层（CEL），扫描光束和具有不同掩模的曝光。 在一个实施方案中，形成图案的方法包括以下步骤：提供具有感光涂层的基底，用一个掩模曝光在感光涂层上的图案的中心区域，以及将图案的端部暴露在感光涂层上，而不暴露中心 区域与第二个掩模。 第二次暴露与第一次暴露重叠，并且可能延伸超出模式，但是第二次剂量比第一次剂量低得多。
-
公开(公告)号：US06268908B1
公开(公告)日：2001-07-31
申请号：US09385907
申请日：1999-08-30
IPC分类号： G03B2772
CPC分类号： G03F7/70091 , G03F7/70116
摘要： The distribution of ultraviolet light irradiated from an illumination source to optical elements of a projection exposure device is varied by an illumination aperture. The illumination aperture is formed with a plurality of openings which may be opened or closed independently to the passage of irradiating light. The size and shape of the opening formed by the plurality of openings of the illumination aperture is determined according to the particular image to be projected.
摘要翻译： 从照明源照射到投影曝光装置的光学元件的紫外线的分布由照明孔径变化。 照明孔形成有多个开口，其可以独立于照射光的通过而打开或关闭。 根据要投影的特定图像确定由照明孔的多个开口形成的开口的尺寸和形状。
-
公开(公告)号：US06577406B2
公开(公告)日：2003-06-10
申请号：US09683551
申请日：2002-01-17
申请人： James A. Bruce , Orest Bula , Emily E. Fisch
发明人： James A. Bruce , Orest Bula , Emily E. Fisch
IPC分类号： G01B1100
CPC分类号： G03F7/70641
摘要： A control target structure and method for monitoring the lithographic affects on minimum feature in a lithographic process. The control target uses line array elements having a nominal width. By changing the shape of the line-ends of the elements the control target can be optimized for controlling either focus or dose.
-
公开(公告)号：US06238850B1
公开(公告)日：2001-05-29
申请号：US09379454
申请日：1999-08-23
IPC分类号： G03C500
CPC分类号： G03F7/70433 , G03F7/203 , G03F7/70466
摘要： A method of forming an image having reduced comer rounding in a photoresist layer is provided which comprises exposing a photoresist layer to a first mask having a first image, said first image having at least two edges; exposing said photoresist layer to a second mask having a second image, said second image having at least two edges, the second image edges being substantially rotated relative to the first image edges to produce a latent image in said photoresist layer having edges substantially rotated relative to the first and second image edges; and developing the photoresist layer to produce said image.
摘要翻译： 提供了一种在光致抗蚀剂层中形成具有减角的图像的方法，其包括将光致抗蚀剂层暴露于具有第一图像的第一掩模，所述第一图像具有至少两个边缘; 将所述光致抗蚀剂层暴露于具有第二图像的第二掩模，所述第二图像具有至少两个边缘，所述第二图像边缘相对于所述第一图像边缘基本旋转，以在所述光致抗蚀剂层中产生潜像，所述潜像基本上相对于 第一和第二图像边缘; 并显影光致抗蚀剂层以产生所述图像。
-
20.发明授权Serif mask design methodology based on enhancing high spatial frequency contribution for improved printability 失效基于增强高空间频率贡献以提高可印刷性的Serif掩模设计方法公开(公告)号：US06214494B1
公开(公告)日：2001-04-10
申请号：US09167948
申请日：1998-10-07
申请人： Orest Bula , Daniel Cole , Edward Conrad , Ning Lu
发明人： Orest Bula , Daniel Cole , Edward Conrad , Ning Lu
IPC分类号： G03F900
CPC分类号： G03F7/70441 , G03F1/36
摘要： A proximity correction serif design methodology is described that provides improved inner and outer corner rounding, line end shortening, as well as improvements in more general undesirable two-dimensional shape distortions introduced into the lithographic printing process due to proximity effects. Using this method, exact solutions are shown for the specialized cases of either coherent or incoherent illumination exposing a hypothetical resist that develops via a simple diffusion like mechanism. The basis of this method for predicting the positions and shapes of serifs is tied to the need to increase the components of high spatial frequency that are essentially lost due to diffraction, diffusion, dissolution, and etching related effects. The correct amount to increase the spatial components is determined in the coordinate space and makes use of an empirical characterization of these physical factors.
摘要翻译： 描述了接近校正衬线设计方法，其提供改进的内角和外角圆角，线端缩短，以及由于邻近效应而被引入到平版印刷工艺中的更一般的不期望的二维形状变形的改进。 使用这种方法，对于相干或非相干照明的特殊情况，显示了明确的解决方案，暴露了通过简单的扩散机制发展的假想抗蚀剂。 用于预测衬线的位置和形状的这种方法的基础与增加基本上由于衍射，扩散，溶解和蚀刻相关效应而损失的高空间频率的分量的需要相关联。 在坐标空间中确定增加空间分量的正确数量，并利用这些物理因素的经验表征。
-
-
-
-
-
-
-
-
-
搜索结果
22 条记录 (耗时 0.028 秒)
