公开(公告)号：US10199591B2

公开(公告)日：2019-02-05

申请号：US15477195

申请日：2017-04-03

Applicant: Japan Display Inc.

Inventor： Yoshinori Ishii ,  Kazufumi Watabe ,  Isao Suzumura

IPC: H01L51/50 ,  H01L29/49 ,  H01L27/32 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/153 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10 ,  H01L51/52

Abstract: An organic EL display device has a TFT formed on the substrate, and an organic EL layer formed on the TFT. A protective layer is formed on the organic EL layer, and a first barrier layer which contains AlOx is formed between the substrate and the TFT.

公开(公告)号：US20180203169A1

公开(公告)日：2018-07-19

申请号：US15828458

申请日：2017-12-01

Applicant: Japan Display Inc.

Inventor： Kazufumi Watabe ,  Hiroshi Kawanago

IPC: G02B5/20 ,  G02F1/1335 ,  G02F1/1368 ,  G02F1/1333 ,  H01L27/12 ,  H01L29/786 ,  H01L21/428

CPC classification number: G02B5/208 ,  G02B5/26 ,  G02F1/133305 ,  G02F1/133509 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2203/11 ,  H01L21/428 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/78603 ,  H01L29/7869 ,  H01L51/0097

Abstract: The purpose of the present invention is to realize a flexible display includes a resin substrate and a TFT having an oxide. The structure of the invention is as follows. A display device comprising: a substrate formed by resin, an inorganic insulating film and a thin film transistor including a semiconductor, wherein an infra-red light reflecting film is formed between the substrate and the thin film transistor.

公开(公告)号：US11942484B2

公开(公告)日：2024-03-26

申请号：US17876063

申请日：2022-07-28

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Hajime Watakabe ,  Kazufumi Watabe

IPC: H01L27/12 ,  G06F1/26 ,  H02J13/00 ,  H04L41/069 ,  H04L47/2416 ,  H04L67/12 ,  H01L29/423 ,  H01L29/51 ,  H01L29/786 ,  H04Q9/02

CPC classification number: H01L27/1225 ,  G06F1/26 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1251 ,  H02J13/00 ,  H02J13/00016 ,  H04L41/069 ,  H04L47/2416 ,  H04L67/12 ,  H01L29/42384 ,  H01L2029/42388 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  H04Q9/02 ,  H04Q2209/826

Abstract: A semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.

公开(公告)号：US11810921B2

公开(公告)日：2023-11-07

申请号：US17983481

申请日：2022-11-09

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Kazufumi Watabe ,  Yoshinori Ishii ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H10K59/121

CPC classification number: H01L27/1225 ,  G02F1/1368 ,  G02F1/13306 ,  G02F1/136209 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/7869 ,  H01L29/78633 ,  H01L29/78675 ,  G02F1/13685 ,  G02F2202/10 ,  G02F2202/104 ,  H10K59/1213

Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US11616104B2

公开(公告)日：2023-03-28

申请号：US16910084

申请日：2020-06-24

Applicant: Japan Display Inc.

Inventor： Hiroshi Kawanago ,  Kazufumi Watabe

IPC: H01L51/52 ,  H01L27/32 ,  B32B15/08 ,  H01L51/00

Abstract: The purpose of the invention is to manufacture the flexible display device having resin substrate with high yield. The structure is as follows.
A manufacturing method of a display device comprising: forming a first layer of a semiconductor on a glass substrate, forming a second layer of a first metal on the first layer, forming a third layer of a first insulating material on the second layer, forming a fourth layer of a second metal or a metal oxide on the third layer, coating precursor of polyimide on the fourth layer, making a polyimide substrate by baking the precursor of polyimide to make a polyimide substrate, forming pixels on the polyimide substrate, separating the polyimide substrate and the glass substrate by making peel off between the second layer and the third layer with irradiation of a laser beam on the first layer.

公开(公告)号：US11482544B2

公开(公告)日：2022-10-25

申请号：US16924281

申请日：2020-07-09

Applicant: Japan Display Inc.

Inventor： Hiroshi Kawanago ,  Kazufumi Watabe

IPC: H01L27/12 ,  H01L51/00 ,  G02F1/1333

Abstract: The purpose of the invention is to manufacture the flexible display device having resin substrate with high throughput and high yield. The structure of the invention is as follows: a display device having plural pixels on a resin substrate comprising: a first layer made of a metal oxide film is formed on a surface of the resin substrate opposite to a surface that the plural pixels are formed, a second layer made of a transparent conductive film is formed in contact with a surface, which is opposite side to the resin substrate, of the first layer.

公开(公告)号：US11049882B2

公开(公告)日：2021-06-29

申请号：US16743080

申请日：2020-01-15

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Kazufumi Watabe ,  Yoshinori Ishii ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49

Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US10396304B2

公开(公告)日：2019-08-27

申请号：US15596056

申请日：2017-05-16

Applicant: Japan Display Inc.

Inventor： Kazufumi Watabe ,  Yoshinori Ishii

IPC: H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H05B33/14 ,  H05B33/20 ,  G06F1/16 ,  C09K19/06 ,  C09K19/38 ,  G02F1/1333

Abstract: The invention provides an organic EL display device that, even if bent, is not prone to plastic deformation and has improved moisture blocking characteristics.An organic EL display device includes: a glass substrate; an organic EL layer formed on an upper side of the glass substrate; and a support substrate glued on a lower side of the glass substrate via a first adhesive. Recessed portions or projecting portions are formed on the glass substrate at a side thereof facing the support substrate. The recessed portions or a space between each of the projecting portions is filled with the first adhesive.

公开(公告)号：US10026754B2

公开(公告)日：2018-07-17

申请号：US15585401

申请日：2017-05-03

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Kazufumi Watabe ,  Yoshinori Ishii ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L27/32

Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US20180102478A1

公开(公告)日：2018-04-12

申请号：US15831452

申请日：2017-12-05

Applicant: Japan Display Inc.

Inventor： Hiroshi Kawanago ,  Kazufumi Watabe

IPC: H01L51/00 ,  H01L27/32 ,  H05B33/12 ,  H05B33/08 ,  H05B33/10 ,  H01L51/52

CPC classification number: H01L51/003 ,  H01L27/322 ,  H01L27/3244 ,  H01L51/5284 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H05B33/0896 ,  H05B33/10 ,  H05B33/12

Abstract: A method of manufacturing a display device, including: a stacking step of stacking, on a glass substrate, a sacrificial resin layer, a metal layer, a transparent metal oxide layer, a base material resin layer, and a functional layer including at least one of a pixel circuit-constituting layer driving a plurality of pixels and a color filter layer, in this order; a radiating step of radiating a pulsed light of a xenon flash lamp to the metal layer through the glass substrate and the sacrificial resin layer; and a detaching step of reducing a force of adhesion between the sacrificial resin layer and the metal layer with the pulsed light radiated in the radiating step, and detaching the sacrificial resin layer from the metal layer.