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11.发明授权Integrated circuit product yield optimization using the results of performance path testing 有权集成电路产品产量优化使用性能路径测试的结果公开(公告)号：US09058034B2
公开(公告)日：2015-06-16
申请号：US13570285
申请日：2012-08-09
IPC分类号： G06F17/50 , G05B19/418
CPC分类号： G05B19/41875 , G05B2219/32182 , G05B2219/32187 , G05B2219/32208 , G05B2219/37224 , Y02P80/30 , Y02P90/22
摘要： Disclosed are embodiments of a method, system and computer program product for optimizing integrated circuit product yield by re-centering the manufacturing line and, optionally, adjusting wafer-level chip dispositioning rules based on the results of post-manufacture (e.g., wafer-level or module-level) performance path testing. In the embodiments, a correlation is made between in-line parameter measurements and performance measurements acquired during the post-manufacture performance path testing. Then, based on this correlation, the manufacturing line can be re-centered. Optionally, an additional correlation is made between performance measurements acquired during wafer-level performance testing and performance measurements acquired particularly during module-level performance path testing and, based on this additional correlation, adjustments can be made to the wafer-level chip dispositioning rules to further minimize yield loss.
摘要翻译： 公开了用于通过使生产线重新对中来优化集成电路产品产量的方法，系统和计算机程序产品的实施例，并且可选地，基于后期制造的结果调整晶片级芯片布置规则（例如，晶片级 或模块级）性能路径测试。 在实施例中，在后续制造性能路径测试期间获得的在线参数测量和性能测量之间进行相关。 然后，基于这种相关性，生产线可以重新居中。 可选地，在晶片级性能测试期间获得的性能测量和特别在模块级性能路径测试期间获得的性能测量之间进行附加的相关性，并且基于该附加相关性，可以对晶片级芯片布置规则进行调整 进一步降低产量损失。
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12.发明授权公开(公告)号：US08726201B2
公开(公告)日：2014-05-13
申请号：US12780138
申请日：2010-05-14
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G06F2217/10
摘要： A method and system to predict a number of electromigration critical elements in semiconductor products. This method includes determining critical element factors for a plurality of library elements in a circuit design library using a design tool running on a computer device and based on at least one of an increased reliability temperature and an increased expected current. The method also includes determining a number of critical elements in a product based on: (i) numbers of respective ones of the plurality of library elements comprised in the product, and (ii) the critical element factors.
摘要翻译： 一种用于预测半导体产品中多个电迁移关键元件的方法和系统。 该方法包括使用运行在计算机设备上的设计工具并且基于增加的可靠性温度和增加的预期电流中的至少一个来确定电路设计库中的多个库元件的关键要素因子。 该方法还包括：（i）产品中包含的多个库元素中的相应数量的数量，以及（ii）关键要素因素来确定产品中的关键元素的数量。
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公开(公告)号：US20130326459A1
公开(公告)日：2013-12-05
申请号：US13749851
申请日：2013-01-25
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G01R31/31721 , G06F17/5031
摘要： A method of optimizing power and timing for an integrated circuit (IC) chip, identifies a plurality of valid temperature and voltage combinations that allow integrated circuit chips produced according to the integrated circuit chip design to operate within average power consumption goals and timing delay goals. Such a method selects temperature cut points from the valid temperature and voltage combinations for each of the integrated circuit chips, calculates a power consumption amount of each of the temperature cut points, and adjusts the temperature cut points based on the power consumption amount until the temperature cut points achieve the average power consumption goals. Next, this method tests each of the integrated circuit chips, and records the temperature cut points in the memory of the integrated circuit chips.
摘要翻译： 一种优化集成电路（IC）芯片的功率和定时的方法，识别允许根据集成电路芯片设计产生的集成电路芯片在平均功耗目标和时序延迟目标内工作的多个有效的温度和电压组合。 这种方法从每个集成电路芯片的有效温度和电压组合中选择温度切割点，计算每个温度切断点的功率消耗量，并且基于功耗量调节温度切断点直到温度 切点实现了平均功耗目标。 接下来，该方法测试每个集成电路芯片，并将温度切割点记录在集成电路芯片的存储器中。
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14.发明申请METHOD FOR COMPUTING THE SENSITIVITY OF A VLSI DESIGN TO BOTH RANDOM AND SYSTEMATIC DEFECTS USING A CRITICAL AREA ANALYSIS TOOL 失效使用关键区域分析工具计算VLSI设计对两个随机和系统缺陷的灵敏度的方法公开(公告)号：US20120137262A1
公开(公告)日：2012-05-31
申请号：US13368413
申请日：2012-02-08
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed. The fault density value is subsequently compared to a predetermined value, wherein the predetermined value is determined using test structures and/or yield data from a target manufacturing process.
摘要翻译： 估计集成电路产量的方法包括基于制造过程提供集成电路布局和一组系统缺陷。 接下来，该方法通过修改集成电路布局中的结构以产生修改的结构来表示系统缺陷。 更具体地，对于短路导致的缺陷，当结构包括较高的系统缺陷灵敏度水平时，该方法预扩展结构，并且当结构包括较低的系统缺陷灵敏度水平时，预结构。 接下来，使用改进的结构对集成电路布局进行关键区域分析，其中使用点投掷，几何展开或Voronoi图。 然后，该方法计算故障密度值，计算随机缺陷和系统缺陷。 随后将故障密度值与预定值进行比较，其中使用来自目标制造过程的测试结构和/或屈服数据确定预定值。
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15.发明申请公开(公告)号：US20090158231A1
公开(公告)日：2009-06-18
申请号：US11955580
申请日：2007-12-13
申请人： Brent A. Anderson , Jeanne P. Bickford , Markus Buehler , Jason D. Hibbeler , Juergen Koehl , Edward J. Nowak
发明人： Brent A. Anderson , Jeanne P. Bickford , Markus Buehler , Jason D. Hibbeler , Juergen Koehl , Edward J. Nowak
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A design structure for an integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.
摘要翻译： 一种用于集成电路的设计结构，该集成电路包括第一级布线轨道的第一线，第二级布线轨道的第二线，第三级布线轨道的第三线，以及位于第一距离处的第四线 第二根电线在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线，第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线，第四通孔基本上与第三通孔轴向对准。 第二，第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径，该路径对于第一通孔是冗余的。
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16.发明授权Method and system for providing quality control on wafers running on a manufacturing line 失效用于对在生产线上运行的晶片提供质量控制的方法和系统公开(公告)号：US07089132B2
公开(公告)日：2006-08-08
申请号：US10709805
申请日：2004-05-28
CPC分类号： G01R31/2831 , H01L22/14
摘要： A method for providing quality control on wafers running on a manufacturing line is disclosed. The resistances on a group of manufacturing test structures within a wafer running on a wafer manufacturing line are initially measured. Then, an actual distribution value is obtained based on the result of the measured resistances on the group of manufacturing test structures. The difference between the actual distribution value and a predetermined distribution value is recorded. Next, the resistances on a group of design test structures within the wafer are measured. The measured resistances of the group of design test structures are correlated to the measured resistances of the group of manufacturing test structures in order to obtain an offset value. The resistance of an adjustable resistor circuit within the wafer and subsequent wafers running on the wafer manufacturing line are adjusted according to the offset value.
摘要翻译： 公开了一种用于对在生产线上运行的晶片进行质量控制的方法。 初始测量在晶片生产线上运行的晶片内的一组制造测试结构的电阻。 然后，基于制造试验结构体的测定电阻的结果，求出实际的分布值。 记录实际分布值与预定分布值之间的差。 接下来，测量晶片内的一组设计测试结构的电阻。 设计测试结构组的测量电阻与制造测试结构组的测量电阻相关，以获得偏移值。 根据偏移值调整晶片内的可调节电阻电路和在晶片生产线上运行的随后的晶片的电阻。
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公开(公告)号：US08839170B2
公开(公告)日：2014-09-16
申请号：US13749851
申请日：2013-01-25
IPC分类号： G06F17/50 , G01R31/317
CPC分类号： G06F17/5045 , G01R31/31721 , G06F17/5031
摘要： A method of optimizing power and timing for an integrated circuit (IC) chip, identifies a plurality of valid temperature and voltage combinations that allow integrated circuit chips produced according to the integrated circuit chip design to operate within average power consumption goals and timing delay goals. Such a method selects temperature cut points from the valid temperature and voltage combinations for each of the integrated circuit chips, calculates a power consumption amount of each of the temperature cut points, and adjusts the temperature cut points based on the power consumption amount until the temperature cut points achieve the average power consumption goals. Next, this method tests each of the integrated circuit chips, and records the temperature cut points in the memory of the integrated circuit chips.
摘要翻译： 一种优化集成电路（IC）芯片的功率和定时的方法，识别允许根据集成电路芯片设计产生的集成电路芯片在平均功耗目标和时序延迟目标内工作的多个有效的温度和电压组合。 这种方法从每个集成电路芯片的有效温度和电压组合中选择温度切割点，计算每个温度切断点的功率消耗量，并且基于功耗量调节温度切断点直到温度 切点实现了平均功耗目标。 接下来，该方法测试每个集成电路芯片，并将温度切割点记录在集成电路芯片的存储器中。
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18.发明申请INTEGRATED CIRCUIT PRODUCT YIELD OPTIMIZATION USING THE RESULTS OF PERFORMANCE PATH TESTING 有权使用性能路径测试结果的集成电路产品线优化公开(公告)号：US20140046466A1
公开(公告)日：2014-02-13
申请号：US13570285
申请日：2012-08-09
IPC分类号： G05B19/18
CPC分类号： G05B19/41875 , G05B2219/32182 , G05B2219/32187 , G05B2219/32208 , G05B2219/37224 , Y02P80/30 , Y02P90/22
摘要： Disclosed are embodiments of a method, system and computer program product for optimizing integrated circuit product yield by re-centering the manufacturing line and, optionally, adjusting wafer-level chip dispositioning rules based on the results of post-manufacture (e.g., wafer-level or module-level) performance path testing. In the embodiments, a correlation is made between in-line parameter measurements and performance measurements acquired during the post-manufacture performance path testing. Then, based on this correlation, the manufacturing line can be re-centered. Optionally, an additional correlation is made between performance measurements acquired during wafer-level performance testing and performance measurements acquired particularly during module-level performance path testing and, based on this additional correlation, adjustments can be made to the wafer-level chip dispositioning rules to further minimize yield loss.
摘要翻译： 公开了用于通过使生产线重新对中来优化集成电路产品产量的方法，系统和计算机程序产品的实施例，并且可选地，基于后期制造的结果调整晶片级芯片布置规则（例如，晶片级 或模块级）性能路径测试。 在实施例中，在后续制造性能路径测试期间获得的在线参数测量和性能测量之间进行相关。 然后，基于这种相关性，生产线可以重新居中。 可选地，在晶片级性能测试期间获得的性能测量和特别在模块级性能路径测试期间获得的性能测量之间进行附加的相关性，并且基于该附加相关性，可以对晶片级芯片布置规则进行调整 进一步降低产量损失。
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19.发明授权Power and timing optimization for an integrated circuit by voltage modification across various ranges of temperatures 失效通过各种温度范围内的电压修改对集成电路进行功率和时序优化公开(公告)号：US08543960B1
公开(公告)日：2013-09-24
申请号：US13484451
申请日：2012-05-31
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G01R31/3004 , G01R31/3016 , G01R31/31725 , G06F17/5031
摘要： A method of optimizing power and timing for an integrated circuit (IC) chip, which uses an IC technology that exhibits temperature inversion, by modifying a voltage supplied to the IC chip, while meeting power consumption and timing delay performances across lower and higher temperature ranges. A high voltage is selected that meets a closed timing analysis across a full temperature range to meet a timing performance and a low voltage is selected to meet the timing performance and the power performance across a lower temperature range to a temperature cut point in the higher temperature range. The IC chip is turned on at the high voltage and the high voltage is lowered to the low voltage when the temperature cut point is exceeded to meet the power performance while maintaining the timing performance.
摘要翻译： 一种通过修改提供给IC芯片的电压同时满足较低和较高温度范围内的功率消耗和定时延迟性能来优化集成电路（IC）芯片的功率和定时的方法，该集成电路（IC）芯片使用显示温度反转的IC技术 。 选择高电压，以满足整个温度范围内的闭合时序分析，以满足定时性能，并选择低电压以满足更高温度下的温度下降温度范围内的定时性能和功率性能 范围。 IC芯片在高电压下导通，并且当超过温度切断点时将高电压降低到低电压以满足功率性能同时保持定时性能。
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20.发明授权System yield optimization using the results of integrated circuit chip performance path testing 有权系统产量优化采用集成电路芯片性能路径测试的结果公开(公告)号：US08539429B1
公开(公告)日：2013-09-17
申请号：US13572954
申请日：2012-08-13
IPC分类号： G06F17/50
CPC分类号： G01R31/31718 , G01R31/31725
摘要： Disclosed are embodiments of a method, system and computer program for optimizing system yield based on the results of post-manufacture integrated circuit (IC) chip performance path testing. In these embodiments, a correlation is made between IC chip performance measurements, which were acquired from IC chips specifically during post-manufacture (i.e., wafer-level or module-level) performance path testing, and system performance measurements, which were acquired from systems that incorporate those IC chips previously subjected to performance path testing. Based on this correlation and a target system performance value, a post-manufacture (i.e., wafer-level or module-level) chip dispositioning rule can be adjusted to optimize system yield (i.e., to ensure that subsequently manufactured systems which incorporate the IC chip meet the target system performance value). Optionally, simulation of such processing can be performed during design of the IC chip for incorporation into the system in order establish the initial chip dispositioning rule in the first place.
摘要翻译： 公开了一种基于后制造集成电路（IC）芯片性能路径测试的结果来优化系统产量的方法，系统和计算机程序的实施例。 在这些实施例中，在IC芯片特性在后期制造（即晶片级或模块级）性能路径测试中获得的IC芯片性能测量和从系统获取的系统性能测量之间进行相关 其中包含先前经过性能路径测试的那些IC芯片。 基于这种相关性和目标系统性能值，可以调整后制造（即晶片级或模块级）芯片布置规则以优化系统产量（即，确保随后制造的并入IC芯片的系统 满足目标系统的性能价值）。 可选地，可以在用于结合到系统中的IC芯片的设计期间执行这种处理的模拟，以便首先建立初始的芯片布置规则。
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