公开(公告)号：US08710612B2

公开(公告)日：2014-04-29

申请号：US13112828

申请日：2011-05-20

申请人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Jeng-Shyan Lin ,  Cheng-Ying Ho

发明人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Jeng-Shyan Lin ,  Cheng-Ying Ho

IPC分类号： H01L31/02 ,  H01L21/30 ,  H01L27/146

CPC分类号： H01L31/02005 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14698 ,  H01L31/02327 ,  H01L2224/0345 ,  H01L2224/03831 ,  H01L2224/0391 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/01029 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device includes a device substrate having a front side and a back side corresponding to a front side and a back side of the semiconductor device, a metal feature formed on the front side of the device substrate, a bonding pad disposed on the back side of the semiconductor device and in electrical communication with the metal feature, and a shield structure disposed on the back side of the device substrate in which the shield structure and the bonding pad have different thicknesses relative to each other.

摘要翻译： 半导体器件包括具有与半导体器件的正面和背面对应的正面和背面的器件基板，形成在器件基板的正面的金属特征，设置在背面侧的接合焊盘 和与金属特征电连通的屏蔽结构，以及设置在器件基板背面的屏蔽结构，其中屏蔽结构和焊盘相对于彼此具有不同的厚度。

公开(公告)号：US20120292728A1

公开(公告)日：2012-11-22

申请号：US13112828

申请日：2011-05-20

申请人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Jeng-Shyan Lin ,  Cheng-Ying Ho

发明人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Jeng-Shyan Lin ,  Cheng-Ying Ho

IPC分类号： H01L31/0232

CPC分类号： H01L31/02005 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14698 ,  H01L31/02327 ,  H01L2224/0345 ,  H01L2224/03831 ,  H01L2224/0391 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/01029 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device includes a device substrate having a front side and a back side corresponding to a front side and a back side of the semiconductor device, a metal feature formed on the front side of the device substrate, a bonding pad disposed on the back side of the semiconductor device and in electrical communication with the metal feature, and a shield structure disposed on the back side of the device substrate in which the shield structure and the bonding pad have different thicknesses relative to each other.

摘要翻译： 半导体器件包括具有与半导体器件的正面和背面对应的正面和背面的器件基板，形成在器件基板的正面的金属特征，设置在背面侧的接合焊盘 和与金属特征电连通的屏蔽结构，以及设置在器件基板背面的屏蔽结构，其中屏蔽结构和焊盘相对于彼此具有不同的厚度。

公开(公告)号：US08946849B2

公开(公告)日：2015-02-03

申请号：US13592124

申请日：2012-08-22

申请人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Feng-Chi Hung

发明人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Feng-Chi Hung

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14687

摘要： A device includes a semiconductor substrate having a front side and a backside. A plurality of image sensors is disposed at the front side of the semiconductor substrate. A plurality of clear color-filters is disposed on the backside of the semiconductor substrate. A plurality of metal rings encircles the plurality of clear color-filters.

摘要翻译： 一种器件包括具有正面和背面的半导体衬底。 多个图像传感器设置在半导体衬底的前侧。 多个透明滤色器设置在半导体衬底的背面。 多个金属环围绕多个透明滤色器。

公开(公告)号：US20130285179A1

公开(公告)日：2013-10-31

申请号：US13457301

申请日：2012-04-26

申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14689

摘要： A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.

摘要翻译： 提供了一种用于减少感光二极管之间串扰的系统和方法。 在一个实施例中，在第一感光二极管上形成第一滤色器，并且在第二感光二极管上形成第二滤色器，并且在第一滤色器和第二滤色器之间形成间隙。 间隙将用于反射否则将从第一滤色器过渡到第二滤色器的光，从而减少第一光敏二极管和第二感光二极管之间的串扰。 也可以在第一感光二极管和第二感光二极管之间形成反射栅格，以帮助反射并进一步减少串扰量。

公开(公告)号：US09224770B2

公开(公告)日：2015-12-29

申请号：US13457301

申请日：2012-04-26

申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

IPC分类号： H01L31/0203 ,  H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14689

摘要： A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.

摘要翻译： 提供了一种用于减少感光二极管之间串扰的系统和方法。 在一个实施例中，在第一感光二极管上形成第一滤色器，并且在第二感光二极管上形成第二滤色器，并且在第一滤色器和第二滤色器之间形成间隙。 间隙将用于反射否则将从第一滤色器过渡到第二滤色器的光，从而减少第一光敏二极管和第二感光二极管之间的串扰。 也可以在第一感光二极管和第二感光二极管之间形成反射栅格，以帮助反射并进一步减少串扰量。

公开(公告)号：US08941204B2

公开(公告)日：2015-01-27

申请号：US13458827

申请日：2012-04-27

申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Tzu-Hsuan Hsu ,  Shuang-Ji Tsai ,  Min-Feng Kao

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Tzu-Hsuan Hsu ,  Shuang-Ji Tsai ,  Min-Feng Kao

IPC分类号： H01L27/146 ,  H01L21/762 ,  H01L31/0232

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463

摘要： A method for reducing cross talk in image sensors comprises providing a backside illuminated image sensor wafer, forming an isolation region in the backside illuminated image sensor wafer, wherein the isolation region encloses a photo active region, forming an opening in the isolation region from a backside of the backside illuminated image sensor wafer and covering an upper terminal of the opening with a dielectric material to form an air gap embedded in the isolation region of the backside illuminated image sensor wafer.

摘要翻译： 一种用于减少图像传感器中的串扰的方法包括提供背面照射的图像传感器晶片，在背面照射的图像传感器晶片中形成隔离区域，其中隔离区域包围光有源区域，在隔离区域中形成从后侧开口 并且用电介质材料覆盖开口的上端，以形成嵌入在背面照射的图像传感器晶片的隔离区域中的气隙。

公开(公告)号：US20130307107A1

公开(公告)日：2013-11-21

申请号：US13592124

申请日：2012-08-22

申请人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Feng-Chi Hung

发明人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Feng-Chi Hung

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14687

摘要： A device includes a semiconductor substrate having a front side and a backside. A plurality of image sensors is disposed at the front side of the semiconductor substrate. A plurality of clear color-filters is disposed on the backside of the semiconductor substrate. A plurality of metal rings encircles the plurality of clear color-filters.

摘要翻译： 一种器件包括具有正面和背面的半导体衬底。 多个图像传感器设置在半导体衬底的前侧。 多个透明滤色器设置在半导体衬底的背面。 多个金属环围绕多个透明滤色器。

公开(公告)号：US20130285181A1

公开(公告)日：2013-10-31

申请号：US13458827

申请日：2012-04-27

申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Tzu-Hsuan Hsu ,  Shuang-Ji Tsai ,  Min-Feng Kao

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Tzu-Hsuan Hsu ,  Shuang-Ji Tsai ,  Min-Feng Kao

IPC分类号： H01L31/0232

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463

摘要： A method for reducing cross talk in image sensors comprises providing a backside illuminated image sensor wafer, forming an isolation region in the backside illuminated image sensor wafer, wherein the isolation region encloses a photo active region, forming an opening in the isolation region from a backside of the backside illuminated image sensor wafer and covering an upper terminal of the opening with a dielectric material to form an air gap embedded in the isolation region of the backside illuminated image sensor wafer.

摘要翻译： 一种用于减少图像传感器中的串扰的方法包括提供背面照射的图像传感器晶片，在背面照射的图像传感器晶片中形成隔离区域，其中隔离区域包围光有源区域，在隔离区域中形成从后侧开口 并且用电介质材料覆盖开口的上端，以形成嵌入在背面照射的图像传感器晶片的隔离区域中的气隙。

公开(公告)号：US08952497B2

公开(公告)日：2015-02-10

申请号：US13619705

申请日：2012-09-14

申请人： U-Ting Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Shuang-Ji Tsai

发明人： U-Ting Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Shuang-Ji Tsai

IPC分类号： H01L21/78 ,  H01L23/00

CPC分类号： H01L21/78 ,  H01L22/32 ,  H01L22/34 ,  H01L23/562 ,  H01L23/585 ,  H01L27/1464 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips.

摘要翻译： 晶片包括排列成行和列的多个芯片。 第一组多个划痕线在多个芯片的行之间。 第一多个划线中的每一个包括含有金属特征的金属特征，其中包含金属特征，以及与金属特征的划线相平行并相邻的金属特征自由划线。 第二多个划线在多个芯片的列之间。

公开(公告)号：US20140077320A1

公开(公告)日：2014-03-20

申请号：US13619705

申请日：2012-09-14

申请人： U-Ting Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Shuang-Ji Tsai

发明人： U-Ting Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Shuang-Ji Tsai

IPC分类号： H01L23/544 ,  H01L21/78 ,  H01L27/146

CPC分类号： H01L21/78 ,  H01L22/32 ,  H01L22/34 ,  H01L23/562 ,  H01L23/585 ,  H01L27/1464 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips.

摘要翻译： 晶片包括排列成行和列的多个芯片。 第一组多个划痕线在多个芯片的行之间。 第一多个划线中的每一个包括含有金属特征的金属特征，其中包含金属特征，以及与金属特征的划线相平行并相邻的金属特征自由划线。 第二多个划线在多个芯片的列之间。