Electrode catalyst with improved longevity properties and fuel cell using the same
    11.
    发明申请
    Electrode catalyst with improved longevity properties and fuel cell using the same 有权
    具有改善寿命性能的电极催化剂和使用其的燃料电池

    公开(公告)号:US20070248862A1

    公开(公告)日:2007-10-25

    申请号:US11488175

    申请日:2006-07-18

    Abstract: Disclosed is an electrode catalyst comprising: (a) a support; (b) metal catalyst particles supported on the support and formed of a catalytically active metal or metal-containing alloy; and (c) an anti-coarsening compound, which is dispersed in at least one region selected from the group consisting of interstitial spaces among the catalyst particles and contact sites between the support and the catalyst particles, and has a coarsening temperature higher than that of the catalyst. A method for preparing the electrode catalyst is also disclosed. Additionally, disclosed is a method for preventing metal catalyst particles supported on a support and formed of a catalytically active metal or metal-containing alloy from coarsening, the method comprising: dispersing an anti-coarsening compound having a coarsening temperature higher than that of the metal catalyst, in at least one region selected from the group consisting of interstitial spaces among the metal catalyst particles and contact sites between the support and the metal catalyst particles. The electrode catalyst is structurally stable while not causing degradation of electrochemical quality, and thus can improve the longevity properties of a fuel cell.

    Abstract translation: 公开了一种电极催化剂,包括:(a)载体; (b)负载在载体上并由催化活性金属或含金属的合金形成的金属催化剂颗粒; 和(c)分散在选自催化剂颗粒间的间隙和载体与催化剂颗粒之间的接触位置的至少一个区域中的抗粗化化合物,其粗化温度高于 催化剂。 还公开了一种制备电极催化剂的方法。 此外,公开了一种防止金属催化剂颗粒负载在由催化活性金属或含金属的合金中粗大化形成的方法,该方法包括:将具有高于金属的粗化温度的抗粗化化合物 催化剂,在选自金属催化剂颗粒之间的间隙和载体与金属催化剂颗粒之间的接触位置的至少一个区域中。 电极催化剂结构稳定,不会导致电化学质量的降低,从而可以改善燃料电池的寿命性能。

    Organic light-emitting display device with frit seal and reinforcing structure
    12.
    发明申请
    Organic light-emitting display device with frit seal and reinforcing structure 有权
    有机发光显示装置,玻璃料密封和加固结构

    公开(公告)号:US20070170839A1

    公开(公告)日:2007-07-26

    申请号:US11541047

    申请日:2006-09-29

    Abstract: Disclosed is an organic light-emitting display device in which the substrate and the encapsulation substrate are attached to each other by using a frit. The organic light-emitting display device includes a first substrate including a pixel region in which an organic light-emitting diode is formed, and a non-pixel region. The organic light-emitting diode includes an organic light-emitting layer between a first electrode and a second electrode. A second substrate attached to the first substrate. A frit is provided between the non-pixel region of the first substrate and the second substrate to attach the first substrate and the second substrate. A reinforcement material of resin is formed outside the frit.

    Abstract translation: 公开了一种有机发光显示装置,其中基板和封装基板通过使用玻璃料彼此附接。 有机发光显示装置包括具有形成有机发光二极管的像素区域和非像素区域的第一基板。 有机发光二极管包括在第一电极和第二电极之间的有机发光层。 附着在第一基板上的第二基板。 在第一基板的非像素区域和第二基板之间设置玻璃料以附接第一基板和第二基板。 在玻璃料外部形成树脂的增强材料。

    Method of forming compressive channel layer of PMOS device using gate spacer and PMOS device having a compressed channel layer
    14.
    发明申请
    Method of forming compressive channel layer of PMOS device using gate spacer and PMOS device having a compressed channel layer 有权
    使用具有压缩沟道层的栅极间隔物和PMOS器件形成PMOS器件的压电沟道层的方法

    公开(公告)号:US20070141795A1

    公开(公告)日:2007-06-21

    申请号:US11637359

    申请日:2006-12-11

    Applicant: Jin Park

    Inventor: Jin Park

    CPC classification number: H01L29/4983 H01L21/31155 H01L29/6656 H01L29/7843

    Abstract: A method of forming a compressive channel layer in a PMOS device and a PMOS device having a compressive channel layer are provided. The method includes (a) forming a buffer oxide layer on a silicon semiconductor substrate having a gate oxide layer and a gate electrode thereon, (b) forming a silicon nitride layer on the buffer oxide layer, (c) implanting impurities into the silicon nitride layer, and (d) etching or patterning the silicon nitride layer and the buffer oxide layer into which impurities are implanted to form gate spacers on sidewalls of the gate electrode.

    Abstract translation: 提供了在PMOS器件中形成压缩沟道层的方法和具有压缩沟道层的PMOS器件。 该方法包括:(a)在其上具有栅极氧化层和栅电极的硅半导体衬底上形成缓冲氧化物层,(b)在缓冲氧化物层上形成氮化硅层,(c)将杂质注入氮化硅 层,以及(d)蚀刻或图案化氮化硅层和其中注入杂质的缓冲氧化物层,以在栅电极的侧壁上形成栅极间隔物。

    Compatible progressive download method and system
    15.
    发明申请
    Compatible progressive download method and system 有权
    兼容的渐进式下载方式和系统

    公开(公告)号:US20070130210A1

    公开(公告)日:2007-06-07

    申请号:US11603624

    申请日:2006-11-22

    Applicant: Jin Park

    Inventor: Jin Park

    Abstract: Disclosed is a compatible progressive download method and system. In the system, a terminal acquires format information of a remote content file prior to download of the content file and sets a progressive download environment based on the acquired format information. The terminal then simultaneously downloads data in a position corresponding to the format information from a server and plays the downloaded data. At this time, receipt of each media data, i.e., audio data and video data, is performed independently and a progressive download is performed in such a way that media data that is smaller than its threshold during playback is downloaded to fill a buffer. This progressive download method can be applied to downloading of content in other formats in addition to formats defined by the 3rd Generation Partnership Project (3GPP). Therefore, it is not necessary for the server to modify the format of content according to the 3GPP standard.

    Abstract translation: 公开了一种兼容的逐行下载方法和系统。 在系统中,终端在下载内容文件之前获取远程内容文件的格式信息,并且基于所获取的格式信息设置逐行下载环境。 终端然后同时从与服务器的格式信息相对应的位置下载数据并播放下载的数据。 此时,独立地执行每个媒体数据的接收,即,音频数据和视频数据,并且以这样的方式执行逐行下载,使得在回放期间小于其阈值的媒体数据被下载以填充缓冲器。 这种渐进式下载方法除了由第三代生成合作伙伴计划(3GPP)定义的格式之外,还可以用于以其它格式下载内容。 因此,服务器不需要根据3GPP标准修改内容的格式。

    Semiconductor device package
    16.
    发明申请
    Semiconductor device package 失效
    半导体器件封装

    公开(公告)号:US20070096343A1

    公开(公告)日:2007-05-03

    申请号:US11585828

    申请日:2006-10-25

    Abstract: Disclosed is a semiconductor device package. The semiconductor device package includes at least one semiconductor device acting as a heating source, a package substrate having an upper surface on which the semiconductor device is mounted, the package substrate at least having a higher heat conductivity than that of the semiconductor device, and a fiber-reinforced polymer composite formed to surround a side surface of the package substrate, the polymer composite including fibers acting as a reinforcing material and a resin mass embedding the fibers therein.

    Abstract translation: 公开了一种半导体器件封装。 半导体器件封装包括至少一个充当加热源的半导体器件,具有上表面的封装衬底,半导体器件安装在该上表面上,封装衬底至少具有比半导体器件更高的导热性, 形成为围绕封装基板的侧表面的纤维增强聚合物复合材料,所述聚合物复合材料包括用作增强材料的纤维和将纤维嵌入其中的树脂块。

    Golf game system and method thereof
    17.
    发明申请
    Golf game system and method thereof 审中-公开
    高尔夫游戏系统及其方法

    公开(公告)号:US20070060409A1

    公开(公告)日:2007-03-15

    申请号:US11515128

    申请日:2006-09-01

    Abstract: A system and method for playing a golf game. A user is allotted with an ability value for the golf game, and a swing gauge for determining a movement direction of a ball is adjusted on the basis of the ability value allotted to the user. The golf game is processed by determining a movement direction of a golf ball on the basis of a signal received according to the user's manipulation of the swing gauge, and moving the ball toward the determined movement direction on the basis of a flight distance according to the ability value and the user's manipulation of the swing gauge. A score is yielded on the basis of a final position of the ball according to a shot played by the user and of the number of strokes taken by the user. A result of the golf game is determined according to the score, and ability points capable of adjusting the ability value according to the result of the golf game are selectively allotted to the user. Accordingly, the user can adjust the ability value which influences the user's rate of winning the golf game using the ability points allotted according to the result of the golf game, thereby enhancing the enjoyment of the golf game.

    Abstract translation: 一种打高尔夫球游戏的系统和方法。 用户被分配有高尔夫游戏的能力值,并且基于分配给用户的能力值来调整用于确定球的移动方向的挥杆。 基于根据用户对摆动量规的操纵接收到的信号,并根据飞行距离将球朝向确定的运动方向移动,来根据飞行距离来确定高尔夫球的移动方向来处理高尔夫游戏 能力值和用户对摆动量规的操纵。 根据用户拍摄的镜头和用户拍摄的笔画数,根据球的最终位置得到分数。 高尔夫游戏的结果根据分数确定,并且能够根据高尔夫游戏的结果调整能力值的能力点被选择性地分配给用户。 因此,用户可以使用根据高尔夫游戏的结果分配的能力点来调整影响用户赢得高尔夫游戏的速率的能力值,从而增强高尔夫游戏的享受。

    Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof
    20.
    发明申请
    Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof 审中-公开
    氮化物半导体LED的照明效率提高和制造方法

    公开(公告)号:US20060208264A1

    公开(公告)日:2006-09-21

    申请号:US11439127

    申请日:2006-05-24

    CPC classification number: H01L33/007

    Abstract: A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.

    Abstract translation: 提高了照明效率的氮化物半导体LED及其制造方法,其中在衬底上形成n掺杂半导体层。 在n掺杂半导体层上形成有源层,以露出n掺杂半导体层的至少一部分区域。 在有源层上形成p掺杂半导体层。 在p掺杂半导体层上形成p +掺杂的半导体层。 通过n掺杂剂离子注入在p +掺杂的半导体层的至少部分上部区域中形成n +掺杂的半导体层。 n +掺杂的半导体层与p +掺杂的半导体层的下面的部分区域配合以实现反向偏压隧道结。 此外,在n +掺杂的半导体层上形成上部n掺杂半导体层,以实现横向电流扩展。 本发明可以通过使用反向偏置隧道结和/或横向电流扩展来提高照明效率。

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