公开(公告)号：US20110095317A1

公开(公告)日：2011-04-28

申请号：US12908413

申请日：2010-10-20

Applicant: Sun Kyung KIM

Inventor： Sun Kyung KIM

IPC: H01L33/22

CPC classification number: H01L33/20 ,  H01L33/145 ,  H01L33/22 ,  H01L33/382 ,  H01L2224/48091 ,  H01L2933/0083 ,  H01L2924/00014

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system including the same. The light emitting device includes a second electrode layerelectrode, a light emitting structure, a texture, and a current spreading layer. The light emitting structure is on second electrode layerelectrode, and includes a second conductive type semiconductor layer, an active layer on the second conductive type semiconductor layer, and a first conductive type semiconductor layer on the active layer. The texture is on at least one portion of the light emitting structure. The current spreading layer is on the light emitting structure provided with the texture.

Abstract translation: 提供了一种发光器件，发光器件封装以及包括该发光器件的照明系统。 发光器件包括第二电极层间电极，发光结构，纹理和电流扩展层。 发光结构在第二电极层间电极上，并且包括第二导电类型半导体层，第二导电类型半导体层上的有源层和有源层上的第一导电类型半导体层。 纹理位于发光结构的至少一部分上。 电流扩散层位于具有纹理的发光结构上。

公开(公告)号：US20100230701A1

公开(公告)日：2010-09-16

申请号：US12720013

申请日：2010-03-09

Applicant: Sun Kyung KIM

Inventor： Sun Kyung KIM

IPC: H01L33/46

CPC classification number: H01L33/02 ,  H01L33/20 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2933/0083 ,  H01L2924/00014

Abstract: A light emitting device, a light emitting device package and a lighting system including the same are provided. The light emitting device may include a light emitting structure, a dielectric pattern, a second electrode layer, and a resonator structure. The light emitting structure may include a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The dielectric pattern may be disposed on the second conductive type semiconductor layer. The second electrode layer may be disposed on the second conductive type comprising the dielectric pattern. The resonator structure may be disposed on the light emitting structure.

Abstract translation: 提供了发光器件，发光器件封装和包括其的照明系统。 发光器件可以包括发光结构，电介质图案，第二电极层和谐振器结构。 发光结构可以包括第一导电类型半导体层，有源层和第二导电类型半导体层。 电介质图案可以设置在第二导电类型半导体层上。 第二电极层可以设置在包括电介质图案的第二导电类型上。 谐振器结构可以设置在发光结构上。

公开(公告)号：US20100090242A1

公开(公告)日：2010-04-15

申请号：US12637637

申请日：2009-12-14

Applicant: Hyun Kyong CHO ,  Sun Kyung KIM ,  Jun Ho JANG

Inventor： Hyun Kyong CHO ,  Sun Kyung KIM ,  Jun Ho JANG

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0083 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

公开(公告)号：US20110287564A1

公开(公告)日：2011-11-24

申请号：US13196648

申请日：2011-08-02

Applicant: Sun Kyung KIM

Inventor： Sun Kyung KIM

IPC: H01L33/42

CPC classification number: H01L33/20 ,  H01L33/44 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58 ,  H01L2933/0083

Abstract: A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of −45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.

Abstract translation: 具有能够提高光提取效率和可靠性的具有光提取结构的发光器件及其制造方法。 发光器件包括具有包括发光层的多层结构的半导体层; 以及以具有单位结构的图案形成在所述半导体层上的光提取结构。 此外，每个单元结构的壁与平行于发光器件的主发光方向的虚拟垂直线成-45°至+45°的角度倾斜。

公开(公告)号：US20110186883A1

公开(公告)日：2011-08-04

申请号：US12900102

申请日：2010-10-07

Applicant: Sun Kyung KIM

Inventor： Sun Kyung KIM

IPC: H01L33/30 ,  H01L33/48

CPC classification number: H01L33/20 ,  H01L2224/48091 ,  H01L2933/0083 ,  H01L2924/00014

Abstract: A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a light extraction structure that extracts light from the light emitting structure. The light extraction structure includes at least a first light extraction zone and a second light extraction zone, where a period and/or size of first concave and/or convex structures of the first light extraction zone is different from a period and/or size of second concave and/or convex structures of the second light extraction zone.

Abstract translation: 发光器件包括在第一导电类型半导体层和第二导电类型半导体层之间包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光结构，以及提取 来自发光结构的光。 光提取结构至少包括第一光提取区和第二光提取区，其中第一光提取区的第一凹和/或凸结构的周期和/或尺寸不同于第一光提取区的周期和/或尺寸 第二光提取区的第二凹和/或凸结构。

公开(公告)号：US20100219434A1

公开(公告)日：2010-09-02

申请号：US12573422

申请日：2009-10-05

Applicant: Sun Kyung KIM

Inventor： Sun Kyung KIM

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/38

Abstract: A light emitting device is provided. The light emitting device may include a reflective layer having a prescribed pattern of at least one shape having prescribed thickness, width and periodicity. The light emitting device may also include a light emitting layer formed on the reflective layer. The prescribed periodicity may be based on 0.75λ/n to 5λ/n, where λ is the wavelength of the light emitted from the light emitting layer, and n is the refractive index of the light emitting layer.

Abstract translation: 提供了一种发光器件。 发光装置可以包括具有预定厚度，宽度和周期的至少一种形状的规定图案的反射层。 发光器件还可以包括形成在反射层上的发光层。 规定的周期可以基于0.75λ/ n至5λ/ n，其中λ是从发光层发射的光的波长，n是发光层的折射率。

公开(公告)号：US20100090243A1

公开(公告)日：2010-04-15

申请号：US12637646

申请日：2009-12-14

Applicant: Hyun Kyong CHO ,  Sun Kyung KIM ,  Jun Ho JANG

Inventor： Hyun Kyong CHO ,  Sun Kyung KIM ,  Jun Ho JANG

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0083 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract translation: 公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。 发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。

公开(公告)号：US20120217509A1

公开(公告)日：2012-08-30

申请号：US13467882

申请日：2012-05-09

Applicant: Sun Kyung KIM ,  Hyun Kyong CHO

Inventor： Sun Kyung KIM ,  Hyun Kyong CHO

IPC: H01L33/32 ,  H01L33/60

CPC classification number: H01L33/10 ,  H01L33/20 ,  H01L33/46 ,  H01L2933/0083

Abstract: A light-emitting device comprises a first conductive type semiconductor layer; a second conductive type semiconductor layer under the first conductive type semiconductor layer; an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a nonconductive semiconductor layer on the first conductive type semiconductor layer and including a light extraction structure formed in the nonconductive semiconductor layer; a recess disposed from the nonconductive semiconductor layer to an upper portion of the first conductive type semiconductor layer; a first electrode layer on the upper portion of the first conductive type semiconductor layer; a second electrode layer under the second conductive type semiconductor layer.

Abstract translation: 发光器件包括第一导电类型半导体层; 在第一导电类型半导体层下面的第二导电类型半导体层; 在所述第一导电类型半导体层和所述第二导电类型半导体层之间的有源层; 在第一导电类型半导体层上的非导电半导体层，并且包括形成在非导电半导体层中的光提取结构; 从所述非导电半导体层设置到所述第一导电类型半导体层的上部的凹部; 在所述第一导电型半导体层的上部的第一电极层; 在第二导电型半导体层下方的第二电极层。

公开(公告)号：US20120012878A1

公开(公告)日：2012-01-19

申请号：US13241984

申请日：2011-09-23

Applicant: Sun Kyung KIM

Inventor： Sun Kyung KIM

IPC: H01L33/60

CPC classification number: H01L33/44 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a passivation layer protecting a surface of the light emitting structure. The passivation layer includes a first passivation layer on a top surface of the light emitting structure and a second passivation layer having a refractive index different from that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure. The second passivation layer has a refractive index greater than that of the first passivation layer.

Abstract translation: 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括发光结构，其包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层，以及保护表面的钝化层 的发光结构。 钝化层包括在发光结构的顶表面上的第一钝化层和具有不同于第一钝化层的折射率的第二钝化层，第二钝化层设置在发光结构的侧表面上 。 第二钝化层的折射率大于第一钝化层的折射率。

公开(公告)号：US20110211354A1

公开(公告)日：2011-09-01

申请号：US13087487

申请日：2011-04-15

Applicant: Sun Kyung KIM

Inventor： Sun Kyung KIM

IPC: F21V3/00 ,  H01L33/60 ,  H01L33/58 ,  F21V21/00

CPC classification number: H01L33/60 ,  H01L33/105 ,  H01L33/20 ,  H01L33/387 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes an electrode layer, a current density adjusting pattern on the electrode layer, and a light emitting structure on the electrode layer and the current density adjusting pattern. A column pattern or a hole pattern serving as a structure of a resonant cavity is formed at an upper portion of the light emitting structure.

Abstract translation: 公开了一种发光器件，发光器件封装和照明系统。 发光器件包括电极层，电极层上的电流密度调节图案，以及电极层上的发光结构和电流密度调节图案。 在发光结构的上部形成有用作谐振腔结构的列图案或孔图案。