Closed contact electroplating cup assembly
    13.
    发明授权
    Closed contact electroplating cup assembly 有权
    闭合电镀杯组装

    公开(公告)号:US07985325B2

    公开(公告)日:2011-07-26

    申请号:US11929638

    申请日:2007-10-30

    CPC classification number: C25D17/001 C25D7/123 C25D17/02

    Abstract: Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.

    Abstract translation: 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底,以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构,其中电接触结构包括外环和从外环向内延伸的多个触点,并且其中每个触头具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构,其配置成使晶片位于杯中心。

    Deionized water conditioning system and methods
    16.
    发明授权
    Deionized water conditioning system and methods 有权
    去离子水调节系统及方法

    公开(公告)号:US09138784B1

    公开(公告)日:2015-09-22

    申请号:US12961274

    申请日:2010-12-06

    CPC classification number: B08B3/10 B01D19/00 H01L21/67017 H01L21/67051

    Abstract: An apparatus for conditioning deionized water and delivering it to a semiconductor wafer in a post electrofill module includes a degassing station configured to remove dissolved gas from the deionized water flow, a heating station configured to heat the deionized water flow, and a nozzle configured to deliver the deionized water flow to the wafer. The heating and degassing are performed before the delivery of the deionized water flow to the wafer. In some implementations the degassing station includes a contact degasser or an inert gas bubbler, and the heating station is configured to heating the deionized water flow to a temperature of between about 35-40° C. In some embodiments the deionized water flow is passed through the degassing station before being passed through the heating station.

    Abstract translation: 一种用于调节去离子水并将其输送到后电解电池模块中的半导体晶片的设备包括:脱气站,其被配置为从去离子水流中除去溶解的气体;加热站,被配置为加热去离子水流;以及喷嘴, 去离子水流向晶片。 在将去离子水流输送到晶片之前进行加热和脱气。 在一些实施方案中,脱气站包括接触脱气器或惰性气体起泡器,并且加热站配置为将去离子水流加热到约35-40℃之间的温度。在一些实施方案中,去离子水流通过 脱气站通过加热站。

    ELECTROPLATING CUP ASSEMBLY
    17.
    发明申请
    ELECTROPLATING CUP ASSEMBLY 有权
    电镀杯组装

    公开(公告)号:US20110233056A1

    公开(公告)日:2011-09-29

    申请号:US13154224

    申请日:2011-06-06

    CPC classification number: C25D17/001 C25D7/123 C25D17/02

    Abstract: Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.

    Abstract translation: 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底,以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构,其中电接触结构包括外环和从外环向内延伸的多个触点,并且其中每个触头具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构,其配置成使晶片位于杯中心。

    Closed Contact Electroplating Cup Assembly
    19.
    发明申请
    Closed Contact Electroplating Cup Assembly 有权
    闭合式电镀杯组装

    公开(公告)号:US20090107836A1

    公开(公告)日:2009-04-30

    申请号:US11929638

    申请日:2007-10-30

    CPC classification number: C25D17/001 C25D7/123 C25D17/02

    Abstract: Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.

    Abstract translation: 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底,以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构,其中电接触结构包括外环和从外环向内延伸的多个接触件,并且其中每个接触件具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构,其配置成使晶片位于杯中心。

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