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20 条记录 (耗时 0.026 秒)

    Deionized water conditioning system and methods
    1.
    发明授权
    Deionized water conditioning system and methods 有权
    去离子水调节系统及方法

    公开(公告)号：US09138784B1

    公开(公告)日：2015-09-22

    申请号：US12961274

    申请日：2010-12-06

    申请人： Jeffrey Alan Hawkins ,  Charles Lorenzo Merrill ,  Jason Daniel Marchetti ,  Kousik Ganesan ,  Bryan L. Buckalew

    发明人： Jeffrey Alan Hawkins ,  Charles Lorenzo Merrill ,  Jason Daniel Marchetti ,  Kousik Ganesan ,  Bryan L. Buckalew

    IPC分类号： B08B3/00 ,  B08B3/10 ,  B01D19/00

    CPC分类号： B08B3/10 ,  B01D19/00 ,  H01L21/67017 ,  H01L21/67051

    摘要： An apparatus for conditioning deionized water and delivering it to a semiconductor wafer in a post electrofill module includes a degassing station configured to remove dissolved gas from the deionized water flow, a heating station configured to heat the deionized water flow, and a nozzle configured to deliver the deionized water flow to the wafer. The heating and degassing are performed before the delivery of the deionized water flow to the wafer. In some implementations the degassing station includes a contact degasser or an inert gas bubbler, and the heating station is configured to heating the deionized water flow to a temperature of between about 35-40° C. In some embodiments the deionized water flow is passed through the degassing station before being passed through the heating station.

    摘要翻译： 一种用于调节去离子水并将其输送到后电解电池模块中的半导体晶片的设备包括：脱气站，其被配置为从去离子水流中除去溶解的气体;加热站，被配置为加热去离子水流;以及喷嘴， 去离子水流向晶片。 在将去离子水流输送到晶片之前进行加热和脱气。 在一些实施方案中，脱气站包括接触脱气器或惰性气体起泡器，并且加热站配置为将去离子水流加热到约35-40℃之间的温度。在一些实施方案中，去离子水流通过 脱气站通过加热站。

    MAGNETICALLY ACTUATED CHUCK FOR EDGE BEVEL REMOVAL
    6.
    发明申请
    MAGNETICALLY ACTUATED CHUCK FOR EDGE BEVEL REMOVAL 有权
    磁力去除的磁力驱动

    公开(公告)号：US20100219920A1

    公开(公告)日：2010-09-02

    申请号：US12394339

    申请日：2009-02-27

    申请人： Jingbin Feng ,  Aaron LaBrie ,  Kousik Ganesan

    发明人： Jingbin Feng ,  Aaron LaBrie ,  Kousik Ganesan

    IPC分类号： H01F7/02

    CPC分类号： H01L21/68728 ,  Y10S414/141 ,  Y10T279/18

    摘要： Provided are magnetically actuated wafer chucks that permit a wafer to be clamped or undamped at any time during a process and at any rotational speed, as desired. Such wafer chucks may include constraining members that are movable between open and closed positions. In a closed position, a constraining member aligns the wafer after wafer handoff and/or clamps the wafer during rotation to prevent it from flying off the chuck. In an open position, the constraining member moves away from the wafer to allow liquid etchant to flow from the wafer edge without obstruction. The constraining members may be, for example, cams, attached to arms or links of the chuck. The cams or other constraining members move between open and closed positions by self-balancing forces including a first force, such as a spring force, that acts to move a cam in a first direction, and a non-contact actuate-able force, such as a magnetic force, that acts to move the cam in the opposite direction. The resulting cam motion is smooth and continuous.

    摘要翻译： 提供了磁力驱动的晶片卡盘，其允许晶片在工艺期间的任何时间以及根据需要以任何转速进行夹紧或无阻尼。 这种晶片卡盘可以包括可在打开位置和闭合位置之间移动的约束构件。 在关闭位置，限制构件在晶片切换之后对准晶片和/或在旋转期间夹紧晶片以防止其从卡盘飞出。 在打开位置，约束构件远离晶片移动，以允许液体蚀刻剂从晶片边缘流动而无障碍。 约束构件可以是例如凸轮，附接到卡盘的臂或连杆。 凸轮或其他约束构件通过自平衡力在打开和关闭位置之间移动，包括用于沿第一方向移动凸轮的第一力（例如弹簧力）和非接触致动力 作为磁力，其作用是使凸轮沿相反方向移动。 所得到的凸轮运动是平滑和连续的。

    Plating method and apparatus with multiple internally irrigated chambers
    7.
    发明授权
    Plating method and apparatus with multiple internally irrigated chambers 有权
    具有多个内部灌溉室的电镀方法和装置

    公开(公告)号：US08540857B1

    公开(公告)日：2013-09-24

    申请号：US13571199

    申请日：2012-08-09

    申请人： Steven Mayer ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Jingbin Feng

    发明人： Steven Mayer ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Jingbin Feng

    IPC分类号： C25B9/00 ,  C25D17/00 ,  C25D7/12

    CPC分类号： C25D17/001 ,  C25D5/08 ,  C25D17/002 ,  C25D17/008

    摘要： An apparatus for electroplating a layer of metal onto a work piece surface includes a membrane separating the chamber of the apparatus into a catholyte chamber and an anolyte chamber. In the catholyte chamber is a catholyte manifold region that includes a catholyte manifold and at least one flow distribution tube. The catholyte manifold and at least one flow distribution tube serve to mix and direct catholyte flow in the catholyte chamber. The provided configuration effectively reduces failure and improves the operational ranges of the apparatus.

    摘要翻译： 用于将金属层电镀到工件表面上的装置包括将装置的室分离成阴极电解液室和阳极电解液室的膜。 在阴极电解液室中是阴极电解液歧管区域，其包括阴极电解液歧管和至少一个流量分布管。 阴极电解液歧管和至少一个分流管用于混合和引导阴极电解液在阴极电解液室中的流动。 所提供的配置有效地减少故障并改善设备的操作范围。

    Electroplating cup assembly
    8.
    发明授权
    Electroplating cup assembly 有权
    电镀杯组装

    公开(公告)号：US08377268B2

    公开(公告)日：2013-02-19

    申请号：US13154224

    申请日：2011-06-06

    申请人： Robert Rash ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Tariq Majid ,  Jeff Hawkins ,  Seshasayee Varadarajan ,  Bryan Buckalew

    发明人： Robert Rash ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Tariq Majid ,  Jeff Hawkins ,  Seshasayee Varadarajan ,  Bryan Buckalew

    IPC分类号： C25D17/06 ,  C25D7/12

    CPC分类号： C25D17/001 ,  C25D7/123 ,  C25D17/02

    摘要： Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.

    摘要翻译： 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个触点，并且其中每个触头具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。