Abstract:
A grooved passageway surface in a magnetic gas gate, the gas gate adapted to operatively connect two adjacent chambers, in the first chamber of which process gases are introduced for depositing a first layer upon a magnetic substrate and in the second chamber of which process gases are introduced for depositing a second layer atop the first layer. Since it is important to prevent the second chamber gases from contaminating the first chamber gases, a constant pressure differential established between the chambers is employed to provide a substantially unidirectional flow of gases from the first chamber into the second chamber. Magnetic gas gates have been used in the prior art to reduce the size of gas gate passageways by creating a magnetic field which urges the unlayered surface of the substrate toward a wall of the passageway. Although, thereby reducing the size of the passageway opening and correspondingly reducing the back diffusion of gases from the second chamber, the passageway is simultaneously divided into a relatively large flow channel and a relatively narrow flow channel. The present invention is concerned with reducing the back diffusion of gases through the relatively narrow flow channel. This is accomplished by forming a plurality of elongated grooves in the passageway wall toward which the unlayered surface of the substrate is urged. The grooves are substantially coextensive with the length of the passageway so as to operatively interconnect the adjacent chambers. The flow channels thus established are able to accommodate a sufficient flow rate of process gases to further reduce the back diffusion of process gases.
Abstract:
A system and method for measuring the velocity of gas flow between multiple plasma deposition chambers is provided. A passage atmospherically linking two plasma processing chambers conducts a gas flow therebetween due to differential pressures within the respective chambers. The gas flow velocity is measured by a linear or non-linear ultrasonic energy acoustic path between two transducers located exteriorly to the chambers using the difference in transit time in a forward and reverse direction due to the velocity of gas in the passage. The pressure of process gas in one or more chambers is adjustable based on the measured velocity of gas flow in the passage.
Abstract:
A system for the continuous deposition of a semiconductor material onto one or more webs of substrate material which are advanced therethrough includes a web transport system having a plurality of web support assemblies. Each web support assembly includes a base having a primary support arm pivotally mounted thereto so as to be displaceable from a first position to a second position. The support includes a first biasing member in mechanical communication with the primary support arm. The first biasing member operates to impart a first biasing force to the primary support arm so as to move it from its first position to its second position. The support includes a dancer arm which is pivotally mounted to the primary support arm so as to be displaceable from a first position to a second position relative to the primary support arm. The system further includes a second biasing member in mechanical communication with the dancer arm. The second biasing member operates to impart a second biasing force to the dancer arm so as to move it from its first position to its second position. A roller is rotatably supported on the dancer arm. The roller is configured to engage a portion of the web. The web support assembly operates to maintain continuous contact between the roller and the moving web of substrate material as it passes through the deposition system.
Abstract:
A semiconductor device is provided in accordance with an exemplary embodiment. The semiconductor device includes a semiconductive layer disposed over a multi-layer substrate. The multi-layer substrate includes a plurality of dissimilar regions, one of which is an inner magnetic region and the remainder of the multi-layer substrate is thermally symmetrical about the inner magnetic region.
Abstract:
Deposition apparatus for uniformly forming material on a substrate in accordance with an exemplary embodiment is provided. The deposition apparatus includes an energy source, an electrode in a facing, spaced relationship with respect to the substrate, and interface structure joined to the electrode. The interface structure is configured to electrically couple energy from the energy source through and about the interface structure to the electrode for formation of a substantially uniform electric field between the electrode and a predetermined area of the substrate when the interface structure is supplied with energy from the energy source.
Abstract:
A novel high speed, high quality plasma enhanced surface modification or CVD thin-film deposition method and apparatus. The invention employs both microwave and e-beam energy for creation of a plasma of excited species which modify the surface of substrates or are deposited onto substrates to form the desired thin film. The invention also employs a gas jet system to introduce the reacting species to the plasma. This gas jet system allows for higher deposition speed than conventional PECVD processes while maintaining the desired high quality of the deposited materials.
Abstract:
Microwave energy apparatus adapted to sustain a substantially uniform plasma over a relatively large area. In the broadest form of the invention, an isolating window is disposed about the microwave applicator, said isolating window formed from a material through which the microwave energy can be transmitted from the applicator into a plasma reaction vessel and said isolating window configured in a shape which is substantially optimized to withstand compressive forces. In this manner, the thickness of the isolating window may be minimized to provide for rapid thermal cooling, wherby high power densities may be achieved without cracking the window.
Abstract:
There are disclosed a method and apparatus for improved operation of one or more deposition systems. A minimum expenditure malfunction recovery system provides for a variable recovery related to the current hardware and actual states of the system. A simplified input and output (I/O) device is provided to control the data flow in the system without addressing and decoding complexity. A flexible operation system is also provided for a plurality of deposition systems whose operation easily can be varied without reprogramming of the operating sequence.
Abstract:
An apparatus for producing improved large area photovoltaic devices by substantially reducing the warpage of relatively large area, relatively thin webs of magnetic substrate material which travel through a plurality of high temperature, low pressure glow discharge deposition chambers. As the web of the substrate material moves through the deposition chambers, it assumes a normal, elongated path of travel. Due to the elevated deposition temperature, the elongated path of travel, the force of gravity, etc., the web has a tendency to warp. Warpage of the web is undesirable as it promotes the deposition of non-uniform semiconductor alloy layers. The improvement of the present invention contemplates the establishment of at least one magnetic field within each deposition chamber which is adapted to urge the web of substrate material out of its normal path of travel into a flat, substantially planar path of travel. The new flat path of travel serves to substantially reduce warpage of the web which permits uniform amorphous semiconductor alloy layers to be deposited. In alternate embodiments, the web of substrate material may be urged into sliding contact with a plurality of stationary ceramic magnets or the web may be urged into rolling contact with a plurality of rotatable magnetic elements which may either be hollow, ceramic magnets or electromagnets.
Abstract:
A web support assembly for a moving web of substrate material includes a base having a primary support arm pivotally mounted thereto so as to be displaceable from a first position to a second position. The web support assembly includes a first biasing member in mechanical communication with the primary support arm. The first biasing member operates to impart a first biasing force to the primary support arm so as to move it from its first position to its second position. The system includes a dancer arm which is pivotally mounted to the primary support arm so as to be displaceable from a first position to a second position relative primary support arm. The web support assembly further includes a second biasing member in mechanical communication with the dancer arm. The second biasing member operates to impart a second biasing force to the dancer arm so as to move it from its first position to its second position. A roller is rotatably supported on the dancer arm. The roller is configured to engage a portion of the web. The web support assembly operates to maintain continuous contact between the roller and the moving web of substrate material as it passes through a multi-station processing system.