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公开(公告)号：US07132676B2
公开(公告)日：2006-11-07
申请号：US10145140
申请日：2002-05-15
IPC分类号： H01L29/06
CPC分类号： H01S5/10 , B82Y20/00 , H01S5/041 , H01S5/1042 , H01S5/105 , H01S5/3412
摘要： A photon source comprising a quantum dot comprising a confined conduction band energy level capable of being populated with at least one carrier and a confined valence band energy level capable of being populated by at least one carrier is provided, the source further comprises supply means for intermittently supplying at least one carrier to the energy levels to create an exciton in the quantum dot, wherein the supply means are configured to regulate the supply of carriers such that as the exciton decays either a single photon or a plurality of single photons each having different distinct energies are emitted during a predetermined time interval. The source is configured to be able to enhance the production of a desired type of exciton and can also be configured to exploit the use of higher order excitons such as biexcitons.
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公开(公告)号：US09219191B2
公开(公告)日：2015-12-22
申请号：US12903490
申请日：2010-10-13
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0012 , H01L33/08 , H01L33/105 , H01S5/3412 , H01S5/3416
摘要： A photon source comprising a semiconductor heterostructure, said semiconductor heterostructure comprising a quantum well, a barrier region adjacent said quantum well and a quantum dot provided in said quantum well, the photon source further comprising electrical contacts and a power supply coupled to first and second electrical contacts configured to apply a tuneable electric field across said quantum dot to control the emission energy of said quantum dot, said electric field being tuneable across an operating range an wherein the tunneling time of carriers from said quantum dot to said first electrical contact and the tunneling time of carriers from said quantum dot to said second electrical contact are greater than the radiative decay time of an exciton in said quantum dot over said operating range for controlling the emission energy, said photon source being configured such that emission from a single quantum dot exits said photon source.
摘要翻译： 一种包括半导体异质结构的光子源，所述半导体异质结构包括量子阱，与所述量子阱相邻的势垒区和设置在所述量子阱中的量子点，所述光子源还包括电接触和耦合到第一和第二电 触点，被配置为在所述量子点上施加可调电场以控制所述量子点的发射能量，所述电场可在整个工作范围内调节，其中载流子从所述量子点到所述第一电触点的隧穿时间和隧穿 从所述量子点到所述第二电接触的载流子的时间大于在所述操作范围上的所述量子点中的激子的辐射衰减时间，用于控制发射能量，所述光子源被配置为使得来自单个量子点的发射退出 说光子源。
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公开(公告)号：US08841596B2
公开(公告)日：2014-09-23
申请号：US12906624
申请日：2010-10-18
CPC分类号： G01J1/44
摘要： A photon detection system comprising an avalanche photodiode and a voltage source for said avalanche photodiode, wherein said avalanche photodiode comprises Silicon or its heterostructures and wherein said voltage source is configured to bias said avalanche photodiode with a voltage component which is static with respect to time and a voltage component which varies with time.
摘要翻译： 一种包括雪崩光电二极管和用于所述雪崩光电二极管的电压源的光子检测系统，其中所述雪崩光电二极管包括硅或其异质结构，并且其中所述电压源被配置为以相对于时间静态的电压分量来偏置所述雪崩光电二极管， 随时间变化的电压分量。
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公开(公告)号：US08604511B2
公开(公告)日：2013-12-10
申请号：US13419525
申请日：2012-03-14
IPC分类号： H01L33/00
CPC分类号： H01S5/18394 , B82Y10/00 , B82Y20/00 , H01S5/041 , H01S5/06216 , H01S5/105 , H01S5/18319 , H01S5/18327 , H01S5/18369 , H01S5/3412
摘要： A photon source comprising a photon source body, said photon source body comprising at least one quantum dot; carrier injection means for injecting carriers into said at least one quantum dot and change of state means for changing the state of the carriers within the quantum dot after a predetermined time duration, the carrier injection means injecting carriers which are configured to allow emission of radiation by radiative recombination.
摘要翻译： 一种包括光子源体的光子源，所述光子源体包括至少一个量子点; 用于将载流子注入所述至少一个量子点的载流子注入装置和在预定持续时间之后改变量子点内的载流子状态的装置，载流子注入装置注入被配置为允许通过 辐射重组。
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公开(公告)号：US08547617B2
公开(公告)日：2013-10-01
申请号：US13039893
申请日：2011-03-03
IPC分类号： G06E3/00
CPC分类号： G06N99/002 , B82Y10/00
摘要： A component comprising a qubit and a controller for said qubit, said component comprising a quantum dot and an excitation portion configured to produce a neutral exciton state in said quantum dot to form said qubit, the component further comprising a measuring unit to make an optical measurement relating to the orientation of said state, wherein said controller comprises voltage source coupled to electrical contacts configured to apply a modulated electric field across said quantum dot, wherein the modulation is faster than the decay time of said neutral exciton state.
摘要翻译： 一种包括量子位的组件和用于所述量子位的控制器，所述组件包括量子点和激励部分，其被配置为在所述量子点中产生中性激子状态以形成所述量子位，所述组件还包括测量单元以进行光学测量 涉及所述状态的取向，其中所述控制器包括耦合到电触点的电压源，所述电触点被配置为在所述量子点上施加调制电场，其中所述调制比所述中性激子状态的衰减时间快。
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公开(公告)号：US08530881B2
公开(公告)日：2013-09-10
申请号：US13037006
申请日：2011-02-28
申请人： Andrew James Shields
发明人： Andrew James Shields
IPC分类号： H01L33/00
CPC分类号： B82Y30/00 , B82Y20/00 , G02B6/1225 , G02F1/0126 , G02F2203/15 , H01S5/041 , H01S5/10 , H01S5/105 , H01S5/3412
摘要： An optical device which can operate as a single photon emitter 1, comprising a three dimensional optical cavity 7 which spatially confines a photon to the order of the photon wavelength in all three dimensions. The cavity 7 is configured to define preferred emission direction for photons entering the cavity. A photon can be supplied to the cavity using a quantum dot 5. Strong coupling can occur between the cavity 7 and the quantum dot 5 which causes the formation of two hybridised modes. Switching on an off the coupling by irradiating the device with radiation having an energy equal to that of one of the hybridised modes allows the device to act as an optical switch.
摘要翻译： 可以作为单个光子发射器1操作的光学装置，包括在所有三维空间上将光子限制在光子波长的顺序上的三维光学腔7。 空腔7被配置为限定进入空腔的光子的优选发射方向。 可以使用量子点5将光子提供给空腔。在空腔7和量子点5之间可能发生强耦合，这导致形成两种杂化模式。 通过用具有与混合模式中的一种能量相等的能量的辐射照射装置来接通耦合，允许该装置充当光学开关。
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公开(公告)号：US08525149B2
公开(公告)日：2013-09-03
申请号：US12903524
申请日：2010-10-13
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L33/0012 , H01L33/08 , H01L33/105 , H01L33/20
摘要： A photon source comprising: a quantum dot; electrical contacts configured to apply an electric field across said quantum dot: and an electrical source coupled to said contacts, said electrical source being configured to apply a potential such that carriers are supplied to said quantum dot to form a bi-exciton or higher order exciton, wherein said photon source further comprises a barrier configured to increase the time which a carrier takes to tunnel to and from said quantum dot to be greater than the radiative lifetime of an exciton in the quantum dot, the quantum dot being suitable for emission of entangled photons during decay of a bi-exciton or higher order exciton.
摘要翻译： 一种光子源，包括：量子点; 被配置为在所述量子点上施加电场的电触点;以及耦合到所述触点的电源，所述电源被配置为施加电位，使得载流子被提供给所述量子点以形成双激子或更高阶激子 ，其中所述光子源还包括被配置为增加载体从所述量子点隧道到所述量子点的时间大于所述量子点中的激子的辐射寿命的时间，所述量子点适于发出纠缠的 光子在双激子或更高阶激子衰变期间。
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公开(公告)号：US20130107617A1
公开(公告)日：2013-05-02
申请号：US13561843
申请日：2012-07-30
CPC分类号： G11C11/14 , B82Y10/00 , G02F1/015 , G02F2001/01791 , G11C7/005 , G11C13/04 , G11C2216/08
摘要： A quantum memory component including a quantum dot molecule having first and second quantum dots provided in respective first and second layers separated by a barrier layer; an exciton comprising an electron and hole bound state in said quantum dot molecule, the spin state of said exciton forming a qubit; first and second electrical contacts respectively provided below the first quantum dot and above the second quantum dot; a voltage source to apply an electric field across said quantum dot molecule; a controller to modulate the electric field across the quantum dot molecule, including an information acquiring circuit to acquire information concerning the relationship between fine structure splitting of the exciton and the applied electric field and a timing circuit to allow switching of the exciton from an indirect configuration to a direct configuration at predetermined times derived from the fine structure splitting.
摘要翻译： 一种量子存储器组件，包括量子点分子，其具有第一和第二量子点，该第一和第二量子点设置在由阻挡层隔开的相应的第一和第二层中; 在所述量子点分子中包含电子和空穴结合状态的激子，所述激子的自旋状态形成量子位; 分别设置在第一量子点的下方且位于第二量子点的上方的第一和第二电触头; 用于在所述量子点分子上施加电场的电压源; 控制器，用于调制跨越量子点分子的电场，包括信息获取电路以获取关于激子的精细结构分裂与所施加的电场之间的关系的信息，以及定时电路，以允许从间接配置切换激子 以从精细结构分裂得到的预定时间的直接配置。
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19.发明申请公开(公告)号：US20120326116A1
公开(公告)日：2012-12-27
申请号：US13504734
申请日：2010-11-30
CPC分类号： G02B6/13 , B82Y10/00 , B82Y20/00 , G02B2006/12078 , H01L29/127 , H01S5/3412
摘要： A semiconductor structure with a waveguide, the semiconductor structure has a plurality of layers, at least one of which being partially laterally oxidised, said laterally oxidised material modifying the lateral effective refractive index with said structure in order to form a waveguide within the structure, the structure also has a quantum dot, said quantum dot being configured to emit photons into said waveguide, the waveguide being configured such that it guides the output from a single quantum dot.
摘要翻译： 具有波导的半导体结构，所述半导体结构具有多个层，其中至少一个部分地被侧向氧化，所述横向氧化的材料用所述结构改变横向有效折射率，以在该结构内形成波导， 结构还具有量子点，所述量子点被配置为将光子发射到所述波导中，所述波导被配置为使得其引导来自单个量子点的输出。
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公开(公告)号：US08306225B2
公开(公告)日：2012-11-06
申请号：US10890286
申请日：2004-07-14
IPC分类号： H04K1/02
CPC分类号： H04B10/70
摘要： A quantum communication system including an emitter and a receiver, the emitter including an encoder and at least one photon source and being configured to pass a signal pulse and a reference pulse, which are separated in time, through the encoder and output the signal pulse and the reference pulse. The reference pulse has a higher probability of containing more than one photon than the signal pulse. The receiver includes a decoder and at least one detector for measuring the signal pulse and the reference pulse.
摘要翻译： 一种包括发射器和接收器的量子通信系统，发射器包括编码器和至少一个光子源，并被配置为通过编码器传递在时间上分离的信号脉冲和参考脉冲，并输出信号脉冲和 参考脉冲。 参考脉冲具有比信号脉冲包含多于一个光子的更高概率。 接收机包括解码器和用于测量信号脉冲和参考脉冲的至少一个检测器。
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