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    Apparatus and method for detecting a target environmental variable that employs film-bulk acoustic wave resonator oscillators
    11.
    发明授权
    Apparatus and method for detecting a target environmental variable that employs film-bulk acoustic wave resonator oscillators 有权
    用于检测使用膜 - 体声波谐振器振荡器的目标环境变量的装置和方法

    公开(公告)号：US07358651B2

    公开(公告)日：2008-04-15

    申请号：US11109108

    申请日：2005-04-18

    Applicant: Richard C. Ruby ,  Graham M. Flower ,  John D. Larson, III ,  Mark A. Unkrich

    Inventor： Richard C. Ruby ,  Graham M. Flower ,  John D. Larson, III ,  Mark A. Unkrich

    IPC: H01L41/08

    CPC classification number: G01K11/265 ,  G01L1/165 ,  G01L9/0025 ,  H03H9/0542

    Abstract: An apparatus and method for detecting a target environmental variable (TEV). A first film-bulk acoustic resonator (FBAR) oscillator that includes a first FBAR with a first response to the target environmental variable generates a first frequency. A second film-bulk acoustic resonator (FBAR) oscillator that includes a second FBAR with a second response to the target environmental variable generates a second frequency. A circuit that is coupled to the first FBAR oscillator and the second FBAR oscillator determines the target environmental variable (e.g., changes in the TEV) based on the first frequency and the second frequency.

    Abstract translation: 一种用于检测目标环境变量（TEV）的装置和方法。 包括对目标环境变量具有第一响应的第一FBAR的第一薄膜体声波谐振器（FBAR）振荡器产生第一频率。 包括具有对目标环境变量的第二响应的第二FBAR的第二薄膜 - 体声波谐振器（FBAR）振荡器产生第二频率。 耦合到第一FBAR振荡器和第二FBAR振荡器的电路基于第一频率和第二频率来确定目标环境变量（例如，TEV的变化）。

    Duplexer incorporating thin-film bulk acoustic resonators (FBARs)
    16.
    发明授权
    Duplexer incorporating thin-film bulk acoustic resonators (FBARs) 有权
    掺入薄膜体声共振器（FBAR）的双工器

    公开(公告)号：US06262637B1

    公开(公告)日：2001-07-17

    申请号：US09324618

    申请日：1999-06-02

    Applicant: Paul D. Bradley ,  John D. Larson, III ,  Richard C. Ruby

    Inventor： Paul D. Bradley ,  John D. Larson, III ,  Richard C. Ruby

    IPC: H03H954

    CPC classification number: H03H9/568 ,  H03H9/706

    Abstract: An FBAR-based duplexer that comprises a first port, a second port, a third port, a first band-pass filter connected between the first port and the third port and a series circuit connected between the second port and the third port. The first band-pass filter includes a first ladder circuit having shunt and series elements. Each of the elements of the first ladder circuit comprises a film bulk acoustic resonator (FBAR). The series circuit includes a 90° phase shifter in series with a second band-pass filter. The second band-pass filter includes a second ladder circuit having shunt and series elements. Each of the elements of the second ladder circuit comprises a film bulk acoustic resonator. A band-pass filter comprising shunt elements and series elements in which the series elements and the shunt elements are connected to form a ladder circuit, and each of the elements includes a film bulk acoustic resonator (FBAR).

    Abstract translation: 一种基于FBAR的双工器，包括连接在第一端口和第三端口之间的第一端口，第二端口，第三端口，第一带通滤波器以及连接在第二端口和第三端口之间的串联电路。 第一带通滤波器包括具有并联和串联元件的第一梯形电路。 第一梯形电路的每个元件包括膜体声波谐振器（FBAR）。 串联电路包括与第二带通滤波器串联的90°移相器。 第二带通滤波器包括具有分路和串联元件的第二梯形电路。 第二梯形电路的每个元件包括膜体声波谐振器。 一种带通滤波器，包括并联元件和串联元件，其中串联元件和分流元件连接以形成梯形电路，并且每个元件包括膜体声波谐振器（FBAR）。

    Vertically separated acoustic filters and resonators
    17.
    发明授权
    Vertically separated acoustic filters and resonators 失效
    垂直分离的声学滤波器和谐振器

    公开(公告)号：US07312675B2

    公开(公告)日：2007-12-25

    申请号：US11373355

    申请日：2006-03-09

    Applicant: Richard C. Ruby ,  John D. Larson, III

    Inventor： Richard C. Ruby ,  John D. Larson, III

    IPC: H03H9/54

    CPC classification number: H03H9/605 ,  H03H9/587 ,  H03H9/60 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

    Abstract: An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

    Abstract translation: 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离，所以实现谐振器所需的总面积减小，从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

    Thin-film acoustically-coupled transformer
    18.
    发明授权
    Thin-film acoustically-coupled transformer 有权
    薄膜声耦合变压器

    公开(公告)号：US06946928B2

    公开(公告)日：2005-09-20

    申请号：US10699481

    申请日：2003-10-30

    Applicant: John D. Larson, III ,  Richard C. Ruby

    Inventor： John D. Larson, III ,  Richard C. Ruby

    IPC: H03H9/17 ,  H03H9/13 ,  H03H9/60 ,  H03H9/54 ,  H03H9/205

    CPC classification number: H03H9/605 ,  H01L2224/48091 ,  H01L2224/49175 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  Y10T29/42 ,  H01L2924/00014

    Abstract: The acoustically-coupled transformer includes first and second stacked bulk acoustic resonators (SBARs), each having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between them. In one embodiment, the acoustic decoupler comprises a layer of decoupling material has having a nominal thickness equal to an odd integral multiple of one quarter of the wavelength of an acoustic wave having a frequency equal to the transformer's center frequency. In another embodiment, the acoustic decoupler comprises a Bragg stack. Each FBAR has opposed planar electrodes with piezoelectric material between them. The transformer additionally has first terminals, second terminals, a first electrical circuit connecting one FBARs of the first SBAR to one FBAR of the second SBAR and the first terminals, and a second electrical circuit connecting the other FBAR of the first SBAR to the other FBAR of the second SBAR and the second terminals.

    Abstract translation: 声耦合变压器包括第一和第二堆叠的体声波谐振器（SBAR），每个具有堆叠的一对薄膜体声共振器（FBAR），在它们之间具有声耦合器。 在一个实施例中，声学解耦器包括去耦材料层具有等于频率等于变压器中心频率的声波波长四分之一的奇数整数倍的标称厚度。 在另一个实施例中，声分离器包括布拉格堆叠。 每个FBAR都具有与它们之间的压电材料的平面电极。 变压器还具有第一端子，第二端子，将第一SBAR的一个FBAR与第二SBAR的一个FBAR和第一端子连接的第一电路，以及将第一SBAR的另一个FBAR连接到另一个FBAR的第二电路 的第二个SBAR和第二个终端。

    Bulk acoustic resonator perimeter reflection system
    19.
    发明授权
    Bulk acoustic resonator perimeter reflection system 有权
    体声共振器周边反射系统

    公开(公告)号：US06424237B1

    公开(公告)日：2002-07-23

    申请号：US09746525

    申请日：2000-12-21

    Applicant: Richard C. Ruby ,  John D. Larson, III ,  Paul D. Bradley

    Inventor： Richard C. Ruby ,  John D. Larson, III ,  Paul D. Bradley

    IPC: H03H915

    CPC classification number: H03H9/173 ,  H03H9/0211 ,  H03H9/02118 ,  H03H9/132 ,  Y10T29/42

    Abstract: A bulk acoustic resonator having a high quality factor is formed on a substrate having a depression formed in a top surface of the substrate. The resonator includes a first electrode, a piezoelectric material and a second electrode. The first electrode is disposed on the top surface of the substrate and extends beyond the edges of the depression by a first distance to define a first region therebetween. The piezoelectric material is disposed on the top surface of the substrate and over the first electrode, and the second electrode is disposed on the piezoelectric material. The second electrode includes a portion that is located above the depression. The portion of the second electrode that is located over the depression has at least one edge that is offset from a corresponding edge of the depression by a second distance to define a second region therebetween. The first and second regions have different impedances, as a result of the different materials located in the two regions. In addition, the first and second distances are approximately equal to a quarter-wavelength of a sound wave travelling laterally across the respective region, such that reflections off of the edges of the regions constructively interfere to maximize the reflectivity of the resonator.

    Abstract translation: 具有高质量因素的体声波谐振器形成在具有形成在基板的顶表面中的凹陷的基板上。 谐振器包括第一电极，压电材料和第二电极。 第一电极设置在衬底的顶表面上并且延伸超过凹陷的边缘第一距离以限定它们之间的第一区域。 压电材料设置在基板的顶表面上并在第一电极上方，第二电极设置在压电材料上。 第二电极包括位于凹部上方的部分。 位于凹部上方的第二电极的部分具有至少一个边缘，该边缘与凹陷的对应边缘偏移第二距离，以限定它们之间的第二区域。 由于位于两个区域的不同材料，第一和第二区域具有不同的阻抗。 此外，第一和第二距离近似等于横过各个区域横向移动的声波的四分之一波长，使得区域边缘的反射构造地干扰以最大化谐振器的反射率。

    Method of manufacturing vertically separated acoustic filters and resonators
    20.
    发明授权
    Method of manufacturing vertically separated acoustic filters and resonators 失效
    制造垂直分离的声学滤波器和谐振器的方法

    公开(公告)号：US07841055B2

    公开(公告)日：2010-11-30

    申请号：US11373451

    申请日：2006-03-09

    Applicant: Richard C. Ruby ,  John D. Larson, III

    Inventor： Richard C. Ruby ,  John D. Larson, III

    IPC: H01L41/22

    CPC classification number: H03H9/605 ,  H03H9/587 ,  H03H9/60 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

    Abstract: An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

    Abstract translation: 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离，所以实现谐振器所需的总面积减小，从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

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