摘要:
A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by reducing mass from a top electrode layer. For a substrate having multiple resonators, mass is reduced from only selected resonator to provide resonators having different resonance frequencies on the same substrate.
摘要:
A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by mass loading piezoelectric (PZ) layer between two electrodes. For a substrate having multiple resonators, only selected resonator is mass loaded to provide resonators having different resonance frequencies on the same substrate.
摘要:
A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading electrode to a bottom electrode layer. For a substrate having multiple resonators, mass loading bottom electrode is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.
摘要:
A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. The resonator is fabricated on a substrate by fabricating a bottom electrode layer and a piezoelectric (PZ) layer over the bottom electrode layer. A selected portion of the PZ layer is partially etched. Then, a top electrode is fabricated over the selected portion of the PZ layer.
摘要:
A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading top electrode layer. For a substrate having multiple resonators, the top mass loading electrode layer is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.
摘要:
A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. A resonator is fabricated on a substrate, and its top electrode 56 is oxidized to form a oxide layer 58. For a substrate having multiple resonators, the top electrode 56 of only selected resonator is oxidized to provide resonators having different resonance frequencies on the same substrate.
摘要:
An FBAR-based duplexer that comprises a first port, a second port, a third port, a first band-pass filter connected between the first port and the third port and a series circuit connected between the second port and the third port. The first band-pass filter includes a first ladder circuit having shunt and series elements. Each of the elements of the first ladder circuit comprises a film bulk acoustic resonator (FBAR). The series circuit includes a 90° phase shifter in series with a second band-pass filter. The second band-pass filter includes a second ladder circuit having shunt and series elements. Each of the elements of the second ladder circuit comprises a film bulk acoustic resonator. A band-pass filter comprising shunt elements and series elements in which the series elements and the shunt elements are connected to form a ladder circuit, and each of the elements includes a film bulk acoustic resonator (FBAR).
摘要:
A bulk acoustic resonator having a high quality factor is formed on a substrate having a depression formed in a top surface of the substrate. The resonator includes a first electrode, a piezoelectric material and a second electrode. The first electrode is disposed on the top surface of the substrate and extends beyond the edges of the depression by a first distance to define a first region therebetween. The piezoelectric material is disposed on the top surface of the substrate and over the first electrode, and the second electrode is disposed on the piezoelectric material. The second electrode includes a portion that is located above the depression. The portion of the second electrode that is located over the depression has at least one edge that is offset from a corresponding edge of the depression by a second distance to define a second region therebetween. The first and second regions have different impedances, as a result of the different materials located in the two regions. In addition, the first and second distances are approximately equal to a quarter-wavelength of a sound wave travelling laterally across the respective region, such that reflections off of the edges of the regions constructively interfere to maximize the reflectivity of the resonator.
摘要:
A sensor senses an environmental condition. The sensor includes a film bulk acoustic resonator that includes a layer of material that causes resonant frequency and/or quality factor shifts of the film bulk acoustic resonator in response to changes in the environmental condition. The environmental condition may be relative humidity and the layer of material may be a moisture absorptive material.
摘要:
An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.