Method of fine patterning semiconductor device
    13.
    发明授权
    Method of fine patterning semiconductor device 有权
    精细图案化半导体器件的方法

    公开(公告)号:US08029688B2

    公开(公告)日:2011-10-04

    申请号:US12217784

    申请日:2008-07-09

    摘要: For patterning during integrated circuit fabrication, a first pattern of first masking structures is formed, and a buffer layer is formed on exposed surfaces of the first masking structures. Also, a second pattern of second masking structures is formed in recesses between the buffer layer at sidewalls of the first masking structures. Furthermore, the first and masking structures are formed from spin-coating respective high carbon containing materials. Such first and second masking structures pattern a target layer with higher pitch than possible with traditional photolithography.

    摘要翻译: 为了在集成电路制造期间进行图案化,形成第一掩模结构的第一图案,并且在第一掩模结构的暴露表面上形成缓冲层。 此外,在第一掩蔽结构的侧壁处的缓冲层之间的凹部中形成第二掩模结构的第二图案。 此外,第一掩模结构和掩模结构由各自含高含碳材料的旋涂形成。 这样的第一和第二掩模结构以比传统光刻法更高的间距对目标层进行图案化。