摘要:
A CMOS image sensor includes an image transfer transistor therein. This image transfer transistor includes a semiconductor channel region of first conductivity type and an electrically conductive gate on the semiconductor channel region. A gate insulating region is also provided. The gate insulating region extends between the semiconductor channel region and the electrically conductive gate. The gate insulating region includes a nitridated insulating layer extending to an interface with the electrically conductive gate and a substantially nitrogen-free insulating layer extending to an interface with the semiconductor channel region. The nitridated insulating layer may be a silicon oxynitride (SiON) layer.
摘要:
Provided herein are systems and methods for the detection of cells and/or compositions using optical coherence tomography. The systems and methods comprise a plurality of magnets for applying a plurality of distinct magnetic field strengths to the cells and/or compositions and a phase sensitive optical coherence tomographic imaging modality for detecting the cells and/or compositions while same are disposed in the presence of at least one of the plurality of distinct magnetic field strengths.
摘要:
A catheter imaging probe for a patient. The probe includes a conduit through with energy is transmitted. The probe includes a first portion through which the conduit extends. The probe includes a second portion which rotates relative to the conduit to redirect the energy from the conduit. A method for imaging a patient. The method includes the steps of inserting a catheter into the patient. There is the step of rotating a second portion of the catheter relative to a conduit extending through a first portion of the catheter, which redirects the energy transmitted through the conduit to the patient and receives the energy reflected back to the second portion from the patient and redirects the reflected energy to the conduit.
摘要:
A method for forming a capacitor comprises forming a supporting insulating film, an etching stopper film made of alumina series or hafnium oxide series, and a mold insulating film on a surface of a semiconductor substrate having a first structure including conductive plugs surrounded by a first insulating film, patterning the mold insulating film, the etching stopper film and the supporting insulating film to form openings that expose the conductive plugs, forming a storage node conductive film electrically connected to the conductive plugs on the surface of the semiconductor substrate having the openings formed therein and concurrently annealing the etching stopper film, separating the storage node conductive film to form a plurality of storage nodes, exposing at least a part of an outer surface of the storage node by selectively etching remaining mold insulating film, which is exposed by the separated storage node conductive film, until the etching stopper film is exposed, and forming a plurality of plate nodes on the plurality of storage nodes with a dielectric film disposed therebetween.
摘要:
The present invention relates to a rotating catheter tip for optical coherence tomography based on the use of an optical fiber that does not rotate, that is enclosed in a catheter, which has a tip rotates under the influence of a fluid drive system to redirect light from the fiber to a surrounding vessel and the light reflected or backscattered from the vessel back to the optical fiber.
摘要:
The present invention relates to a rotating catheter tip for optical coherence tomography based on the use of an optical fiber that does not rotate, that is enclosed in a catheter, which has a tip rotates under the influence of a fluid drive system to redirect light from the fiber to a surrounding vessel and the light reflected or backscattered from the vessel back to the optical fiber.
摘要:
A semiconductor device and a method of manufacturing the semiconductor device may include a layered structure and a plug. The layered structure may have a lower insulation layer pattern, a single crystalline silicon pattern, and an upper insulation layer pattern provided on a substrate. A contact hole may be provided in the layered structure. The contact hole may expose the single crystalline silicon pattern and the substrate. The plug may include silicon germanium. The plug may be provided in the contact hole and may be electrically connected to the substrate and the single crystalline silicon pattern.
摘要:
In a method of manufacturing a capacitor including a hemispherical grain (HSG) silicon layer, after forming a storage electrode electrically coupled to a contact region of a substrate, the HSG silicon layer is formed on the storage electrode by providing a first gas including silicon and a second gas onto a surface of the storage electrode with a volume ratio of about 1.0:0.1 to about 1.0:5.0. A dielectric layer and a plate electrode are sequentially formed on the HSG silicon layer. A grain size of the HSG silicon layer may be easily adjusted and abnormal growths of the HSG at a lower portion of the storage electrode may be suppressed. Therefore, the HSG silicon layer may be uniformly formed on the storage electrode, and a structural stability of the storage electrode may be improved to prevent electrical defects of the capacitor.
摘要:
A method and apparatus using an on-screen keyboard as an input unit. A method of using an on-screen keyboard as an input unit comprises receiving information on a first key that is selected through the input unit that has fewer input keys than the on-screen keyboard, highlighting a predetermined key in a predetermined group of keys including a number key on the on-screen keyboard that corresponds to the first key, and moving a highlighted portion on the on-screen keyboard when a second key is selected through the input unit.