CMOS IMAGE SENSORS AND METHODS OF FABRICATING SAME
    11.
    发明申请
    CMOS IMAGE SENSORS AND METHODS OF FABRICATING SAME 审中-公开
    CMOS图像传感器及其制造方法

    公开(公告)号:US20080296644A1

    公开(公告)日:2008-12-04

    申请号:US12187103

    申请日:2008-08-06

    IPC分类号: H01L27/146 H01L21/28

    摘要: A CMOS image sensor includes an image transfer transistor therein. This image transfer transistor includes a semiconductor channel region of first conductivity type and an electrically conductive gate on the semiconductor channel region. A gate insulating region is also provided. The gate insulating region extends between the semiconductor channel region and the electrically conductive gate. The gate insulating region includes a nitridated insulating layer extending to an interface with the electrically conductive gate and a substantially nitrogen-free insulating layer extending to an interface with the semiconductor channel region. The nitridated insulating layer may be a silicon oxynitride (SiON) layer.

    摘要翻译: CMOS图像传感器包括其中的图像转移晶体管。 该图像传输晶体管包括半导体沟道区上的第一导电类型的半导体沟道区和导电栅。 还提供了栅极绝缘区域。 栅极绝缘区域在半导体沟道区域和导电栅极之间延伸。 栅极绝缘区域包括延伸到与导电栅极的界面的氮化绝缘层和延伸到与半导体沟道区域的界面的基本上无氮的绝缘层。 氮化绝缘层可以是氮氧化硅(SiON)层。

    Method for forming capacitor using etching stopper film in semiconductor memory
    14.
    发明申请
    Method for forming capacitor using etching stopper film in semiconductor memory 审中-公开
    在半导体存储器中使用蚀刻阻挡膜形成电容器的方法

    公开(公告)号:US20050153518A1

    公开(公告)日:2005-07-14

    申请号:US11012403

    申请日:2004-12-15

    CPC分类号: H01L28/91 H01L27/10852

    摘要: A method for forming a capacitor comprises forming a supporting insulating film, an etching stopper film made of alumina series or hafnium oxide series, and a mold insulating film on a surface of a semiconductor substrate having a first structure including conductive plugs surrounded by a first insulating film, patterning the mold insulating film, the etching stopper film and the supporting insulating film to form openings that expose the conductive plugs, forming a storage node conductive film electrically connected to the conductive plugs on the surface of the semiconductor substrate having the openings formed therein and concurrently annealing the etching stopper film, separating the storage node conductive film to form a plurality of storage nodes, exposing at least a part of an outer surface of the storage node by selectively etching remaining mold insulating film, which is exposed by the separated storage node conductive film, until the etching stopper film is exposed, and forming a plurality of plate nodes on the plurality of storage nodes with a dielectric film disposed therebetween.

    摘要翻译: 一种形成电容器的方法,包括形成支撑绝缘膜,由氧化铝系列或氧化铪系列制成的蚀刻阻挡膜,以及在具有第一结构的半导体衬底的表面上的模具绝缘膜,该第一结构包括由第一绝缘体 膜,图案化模具绝缘膜,蚀刻停止膜和支撑绝缘膜,以形成露出导电插塞的开口,形成与其上形成有开口的半导体衬底的表面上的导电插塞电连接的存储节点导电膜 并且同时退火所述蚀刻停止膜,分离所述存储节点导电膜以形成多个存储节点,通过选择性地蚀刻剩余的模制绝缘膜,暴露所述存储节点的外表面的至少一部分, 节点导电膜,直到蚀刻停止膜暴露,并形成 g多个存储节点上的多个平板节点,其间设置介电膜。

    Method of manufacturing a hemisperical grain silicon layer and method of manufacturing a semiconductor device using the same
    19.
    发明申请
    Method of manufacturing a hemisperical grain silicon layer and method of manufacturing a semiconductor device using the same 审中-公开
    制造半晶粒硅层的方法及使用其制造半导体器件的方法

    公开(公告)号:US20060160337A1

    公开(公告)日:2006-07-20

    申请号:US11323999

    申请日:2005-12-29

    IPC分类号: H01L21/20 H01L21/36

    摘要: In a method of manufacturing a capacitor including a hemispherical grain (HSG) silicon layer, after forming a storage electrode electrically coupled to a contact region of a substrate, the HSG silicon layer is formed on the storage electrode by providing a first gas including silicon and a second gas onto a surface of the storage electrode with a volume ratio of about 1.0:0.1 to about 1.0:5.0. A dielectric layer and a plate electrode are sequentially formed on the HSG silicon layer. A grain size of the HSG silicon layer may be easily adjusted and abnormal growths of the HSG at a lower portion of the storage electrode may be suppressed. Therefore, the HSG silicon layer may be uniformly formed on the storage electrode, and a structural stability of the storage electrode may be improved to prevent electrical defects of the capacitor.

    摘要翻译: 在制造包括半球形晶粒(HSG)硅层的电容器的方法中,在形成与基板的接触区域电耦合的存储电极之后,通过提供包括硅的第一气体和存储电极形成HSG硅层, 第二气体以约1.0:0.1至约1.0:5.0的体积比存储在存储电极的表面上。 在HSG硅层上依次形成电介质层和平板电极。 可以容易地调节HSG硅层的晶粒尺寸,并且可以抑制存储电极下部的HSG的异常生长。 因此,HSG硅层可以均匀地形成在存储电极上,并且可以改善存储电极的结构稳定性,以防止电容器的电缺陷。

    Method and apparatus using on-screen keyboard as input unit
    20.
    发明授权
    Method and apparatus using on-screen keyboard as input unit 有权
    使用屏幕键盘作为输入单元的方法和装置

    公开(公告)号:US09317132B2

    公开(公告)日:2016-04-19

    申请号:US11969251

    申请日:2008-01-04

    CPC分类号: G06F3/0236 G06F3/04886

    摘要: A method and apparatus using an on-screen keyboard as an input unit. A method of using an on-screen keyboard as an input unit comprises receiving information on a first key that is selected through the input unit that has fewer input keys than the on-screen keyboard, highlighting a predetermined key in a predetermined group of keys including a number key on the on-screen keyboard that corresponds to the first key, and moving a highlighted portion on the on-screen keyboard when a second key is selected through the input unit.

    摘要翻译: 使用屏幕键盘作为输入单元的方法和装置。 一种使用屏幕上键盘作为输入单元的方法包括:通过输入单元选择的第一键上的信息具有比屏幕上键盘少的输入键,突出显示预定键组中的预定键,包括 对应于第一键的屏幕键盘上的数字键,以及当通过输入单元选择第二键时移动屏幕键盘上的高亮部分。