公开(公告)号：US20060170090A1

公开(公告)日：2006-08-03

申请号：US11339352

申请日：2006-01-25

申请人： Yasuhiro Shinma ,  Masanori Onodera ,  Kouichi Meguro ,  Koji Taya ,  Junji Tanaka ,  Junichi Kasai

发明人： Yasuhiro Shinma ,  Masanori Onodera ,  Kouichi Meguro ,  Koji Taya ,  Junji Tanaka ,  Junichi Kasai

IPC分类号： H01L23/02

CPC分类号： H05K1/144 ,  H01L23/49827 ,  H01L23/5387 ,  H01L24/73 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2924/01004 ,  H01L2924/01087 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K1/023 ,  H05K1/147 ,  H05K1/189 ,  H05K3/361 ,  H05K3/403 ,  H05K2201/09181 ,  H05K2201/10515 ,  H05K2201/10734 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A stacked type semiconductor device includes semiconductor devices, interposers by which the semiconductor devices are stacked, the interposers having electrodes provided on sides thereof, and a connection substrate connecting the electrodes together. The electrodes provided on the sides of the interposers may be connected to the connection substrate by one of an electrically conductive adhesive or an anisotropically conductive film.

摘要翻译： 堆叠型半导体器件包括半导体器件，半导体器件堆叠的插入器，具有设置在其侧面上的电极的插入器以及将电极连接在一起的连接基板。 设置在插入件侧面的电极可以通过导电粘合剂或各向异性导电膜中的一种连接到连接基板。

公开(公告)号：US09142440B2

公开(公告)日：2015-09-22

申请号：US12315417

申请日：2008-12-03

申请人： Masanori Onodera ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Koji Taya ,  Junji Tanaka

发明人： Masanori Onodera ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Koji Taya ,  Junji Tanaka

IPC分类号： H01L21/00 ,  H01L21/683 ,  H01L21/673 ,  H01L25/10 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L21/6835 ,  H01L21/67336 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/3511

摘要： A method of producing a carrier structure for fabricating a stacked-type semiconductor device includes laminating thin plates for a lower carrier associated with an upper carrier. The method includes forming openings in the thin plates by etching or electric discharge machining. The lower carrier includes a magnet that is buried therein and the magnet maintains contact between the lower carrier and the upper carrier. A thin plate of the laminated thin plates is provided on each opposing surface of the magnet. The lower carrier further includes multiple magnets arranged around a periphery of the lower carrier and through a center region of the lower carrier that is between magnets on the periphery.

摘要翻译： 制造叠层型半导体器件的载体结构的方法包括层叠与上载体相关联的下载体的薄板。 该方法包括通过蚀刻或放电加工在薄板上形成开口。 下载体包括埋在其中的磁体，并且磁体保持下载体和上载体之间的接触。 层叠薄板的薄板设置在磁体的每个相对表面上。 下载体还包括多个磁体，其布置在下载体的周边周围并且穿过位于外围的磁体之间的下载体的中心区域。

公开(公告)号：US20050269682A1

公开(公告)日：2005-12-08

申请号：US11126739

申请日：2005-05-11

申请人： Masanori Onodera ,  Junichi Kasai ,  Kouichi Meguro ,  Junji Tanaka ,  Yasuhiro Shinma ,  Koji Taya

发明人： Masanori Onodera ,  Junichi Kasai ,  Kouichi Meguro ,  Junji Tanaka ,  Yasuhiro Shinma ,  Koji Taya

IPC分类号： H01L21/48 ,  H01L23/02 ,  H01L25/10

CPC分类号： H01L25/50 ,  H01L25/105 ,  H01L2221/68318 ,  H01L2224/16 ,  H01L2225/06586 ,  H01L2225/06596 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331

摘要： A carrier for a stacked type semiconductor device includes a lower carrier having a first accommodating portion that accommodates a first semiconductor device, and an upper carrier having a second accommodating portion that accommodates a second semiconductor device stacked on the first semiconductor device so as to be placed in position on the first semiconductor device. It is thus possible to eliminate an additional device used for stacking the semiconductor device, and thereby reduce the cost.

摘要翻译： 叠层型半导体器件的载体包括具有容纳第一半导体器件的第一容纳部分的下载体和具有第二容纳部分的上载体，所述第二容纳部分容纳堆叠在第一半导体器件上的第二半导体器件以便放置 在第一半导体器件上的位置。 因此，可以消除用于堆叠半导体器件的附加装置，从而降低成本。

公开(公告)号：US07851260B2

公开(公告)日：2010-12-14

申请号：US12332146

申请日：2008-12-10

申请人： Junji Tanaka ,  Kouichi Meguro ,  Yasuhiro Shinma

发明人： Junji Tanaka ,  Kouichi Meguro ,  Yasuhiro Shinma

IPC分类号： H01L21/00

CPC分类号： H01L21/561 ,  H01L24/97 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device is disclosed. As a part of the method, one surface of a substrate is molded with resin where the substrate and the resin are heated in a first heating process and maintained in a flat condition. The substrate and the resin are returned to room temperature while being maintained in the flat condition after the first heating process. The resin is cut after the substrate and the resin are returned to room temperature from a surface of the resin that is opposite the surface of the resin where the substrate contacts the resin. The substrate is left intact when the resin is cut. Thereafter, the substrate is separated.

摘要翻译： 公开了一种制造半导体器件的方法。 作为该方法的一部分，基板的一个表面用树脂模制，其中基板和树脂在第一加热过程中被加热并保持在平坦的状态。 在第一加热处理之后，将基板和树脂恢复到室温，同时保持在平坦状态。 在基板之后切割树脂，树脂从与树脂接触的树脂表面相对的树脂表面返回到室温。 当切割树脂时，基材保持不变。 此后，分离基板。

公开(公告)号：US07696616B2

公开(公告)日：2010-04-13

申请号：US11339352

申请日：2006-01-25

申请人： Yasuhiro Shinma ,  Masanori Onodera ,  Kouichi Meguro ,  Koji Taya ,  Junji Tanaka ,  Junichi Kasai

发明人： Yasuhiro Shinma ,  Masanori Onodera ,  Kouichi Meguro ,  Koji Taya ,  Junji Tanaka ,  Junichi Kasai

IPC分类号： H01L23/02

CPC分类号： H05K1/144 ,  H01L23/49827 ,  H01L23/5387 ,  H01L24/73 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2924/01004 ,  H01L2924/01087 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K1/023 ,  H05K1/147 ,  H05K1/189 ,  H05K3/361 ,  H05K3/403 ,  H05K2201/09181 ,  H05K2201/10515 ,  H05K2201/10734 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A stacked type semiconductor device includes semiconductor devices, interposers by which the semiconductor devices are stacked, the interposers having electrodes provided on sides thereof, and a connection substrate connecting the electrodes together. The electrodes provided on the sides of the interposers may be connected to the connection substrate by one of an electrically conductive adhesive or an anisotropically conductive film.

摘要翻译： 堆叠型半导体器件包括半导体器件，半导体器件堆叠的插入器，具有设置在其侧面上的电极的插入器以及将电极连接在一起的连接基板。 设置在插入件侧面的电极可以通过导电粘合剂或各向异性导电膜中的一种连接到连接基板。

公开(公告)号：US20090093085A1

公开(公告)日：2009-04-09

申请号：US12315417

申请日：2008-12-03

申请人： Masanori Onodera ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Koji Taya ,  Junji Tanaka

发明人： Masanori Onodera ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Koji Taya ,  Junji Tanaka

IPC分类号： H01L21/71 ,  H01L23/48

CPC分类号： H01L21/6835 ,  H01L21/67336 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/3511

摘要： A carrier structure for fabricating a stacked-type semiconductor device includes: a lower carrier that has laminated thin plates and has first openings for mounting first semiconductor packages thereon; and an upper carrier having second openings for mounting second semiconductor packages on the first semiconductor packages. The lower carrier composed of the laminated thin plates realizes an even plate thickness and reduces warps because stress is distributed to the thin plates. This results in an improved production yield. A pattern of the openings in the thin plates of the lower carrier may be formed by etching or electric discharging. The openings thus formed have reduced warps and burrs.

摘要翻译： 用于制造层叠型半导体器件的载体结构包括：具有叠层薄板并具有用于在其上安装第一半导体封装的第一开口的下载体; 以及具有用于将第二半导体封装安装在第一半导体封装上的第二开口的上载体。 由层压薄板构成的下部载体由于应力分布在薄板上，因此实现了均匀的板厚度并且减少了翘曲。 这导致提高的产量。 下载体的薄板中的开口的图案可以通过蚀刻或放电形成。 如此形成的开口减少了经纱和毛刺。

公开(公告)号：US20070290320A1

公开(公告)日：2007-12-20

申请号：US11894828

申请日：2007-08-22

申请人： Masanori Onodera ,  Junichi Kasai ,  Kouichi Meguro ,  Junji Tanaka ,  Yasuhiro Shinma ,  Koji Taya

发明人： Masanori Onodera ,  Junichi Kasai ,  Kouichi Meguro ,  Junji Tanaka ,  Yasuhiro Shinma ,  Koji Taya

IPC分类号： H01L23/02

CPC分类号： H01L25/50 ,  H01L25/105 ,  H01L2221/68318 ,  H01L2224/16 ,  H01L2225/06586 ,  H01L2225/06596 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331

摘要： A carrier for a stacked type semiconductor device includes a lower carrier having a first accommodating portion that accommodates a first semiconductor device, and an upper carrier having a second accommodating portion that accommodates a second semiconductor device stacked on the first semiconductor device so as to be placed in position on the first semiconductor device. It is thus possible to eliminate an additional device used for stacking the semiconductor device, and thereby reduce the cost.

公开(公告)号：US20060043600A1

公开(公告)日：2006-03-02

申请号：US11214630

申请日：2005-08-30

申请人： Masanori Onodera ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Koji Taya ,  Junji Tanaka

发明人： Masanori Onodera ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Koji Taya ,  Junji Tanaka

IPC分类号： H01L23/48

CPC分类号： H01L21/6835 ,  H01L21/67336 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/3511

摘要： A carrier structure for fabricating a stacked-type semiconductor device includes: a lower carrier that has laminated thin plates and has first openings for mounting first semiconductor packages thereon; and an upper carrier having second openings for mounting second semiconductor packages on the first semiconductor packages. The lower carrier composed of the laminated thin plates realizes an even plate thickness and reduces warps because stress is distributed to the thin plates. This results in an improved production yield. A pattern of the openings in the thin plates of the lower carrier may be formed by etching or electric discharging. The openings thus formed have reduced warps and burrs.

公开(公告)号：US20070145579A1

公开(公告)日：2007-06-28

申请号：US11636155

申请日：2006-12-07

申请人： Masataka Hoshino ,  Junichi Kasai ,  Kouichi Meguro ,  Ryota Fukuyama ,  Yasuhiro Shinma ,  Koji Taya ,  Masanori Onodera ,  Naomi Masuda

发明人： Masataka Hoshino ,  Junichi Kasai ,  Kouichi Meguro ,  Ryota Fukuyama ,  Yasuhiro Shinma ,  Koji Taya ,  Masanori Onodera ,  Naomi Masuda

IPC分类号： H01L23/34

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L23/49575 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/05548 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2924/01004 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.

摘要翻译： 本发明提供一种半导体器件，其包括堆叠的半导体芯片，每个半导体芯片包括半导体衬底和设置在半导体衬底的侧面上且在其侧面上形成有凹部的第一绝缘层; 设置在凹部的内侧面的中心部的第一金属层; 以及第二金属层，其设置在凹部中并连接到形成在每个半导体芯片上的第一金属层。 本发明还提供一种半导体器件的制造方法。

公开(公告)号：US09293441B2

公开(公告)日：2016-03-22

申请号：US13252714

申请日：2011-10-04

申请人： Masataka Hoshino ,  Junichi Kasai ,  Kouichi Meguro ,  Ryota Fukuyama ,  Yasuhiro Shinma ,  Koji Taya ,  Masanori Onodera ,  Naomi Masuda

发明人： Masataka Hoshino ,  Junichi Kasai ,  Kouichi Meguro ,  Ryota Fukuyama ,  Yasuhiro Shinma ,  Koji Taya ,  Masanori Onodera ,  Naomi Masuda

IPC分类号： H01L23/02 ,  H01L25/065 ,  H01L25/00 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L23/49575 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/05548 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2924/01004 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.