公开(公告)号：US10778925B2

公开(公告)日：2020-09-15

申请号：US16439297

申请日：2019-06-12

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  Sharon Zamek ,  John Fielden ,  Devis Contarato ,  David L. Brown

IPC: H04N5/378 ,  G01N21/956 ,  H04N5/361 ,  H04N5/372 ,  H01L27/148 ,  G01N21/95 ,  G06T7/00

Abstract: A multiple-column-per-channel image CCD sensor utilizes a multiple-column-per-channel readout circuit including connected transfer gates that alternately transfer pixel data (charges) from a group of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at multiple times the line clock rate to pass the image charges to the shared output circuit. A symmetrical fork-shaped diffusion is utilized in one embodiment to merge the image charges from the group of related pixel columns. A method of driving the multiple-column-per-channel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the multiple-column-per-channel CCD sensor is also described.

公开(公告)号：US10446696B2

公开(公告)日：2019-10-15

申请号：US16151225

申请日：2018-10-03

Applicant: KLA-Tencor Corporation

Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/88 ,  G01N21/95 ,  H01L31/0216 ,  G01N21/956 ,  H01L27/146 ,  H01L27/148

Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer and a doped layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

公开(公告)号：US10194108B2

公开(公告)日：2019-01-29

申请号：US15806913

申请日：2017-11-08

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  David L. Brown ,  Jingjing Zhang ,  Keith Lyon ,  Mark Shi Wang

IPC: G01N21/00 ,  H04N5/3722 ,  G01N21/956

Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.

公开(公告)号：US20160290932A1

公开(公告)日：2016-10-06

申请号：US15182200

申请日：2016-06-14

Applicant: KLA-Tencor Corporation

Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/88 ,  H01L27/146

CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

Abstract translation: 一种检查系统，包括用于将来自照明源的光引导到样品的光学系统（光学器件），以及将从样品反射/散射的光引导到一个或多个图像传感器。 系统的至少一个图像传感器形成在包括具有相对表面的外延层的半导体膜上，形成在外延层的一个表面上的电路元件和在外延层的另一个表面上的纯硼层。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。 图像传感器可以包括在电子轰击的图像传感器和/或检查系统中。

公开(公告)号：US09426400B2

公开(公告)日：2016-08-23

申请号：US14096911

申请日：2013-12-04

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Chuang ,  Yury Yuditsky

IPC: H04N5/374 ,  H04N5/225 ,  G01N21/956

CPC classification number: H04N5/3742 ,  G01N21/8851 ,  G01N2021/8896 ,  G01N2021/95676 ,  H04N5/2256 ,  H04N5/3743

Abstract: A method of operating an image sensor with a continuously moving object is described. In this method, a timed delay integration mode (TDI-mode) operation can be performed during an extended-time illumination pulse. During this TDI-mode operation, charges stored by pixels of the image sensor are shifted only in a first direction, and track the image motion. Notably, a split-readout operation is performed only during non-illumination. During this split-readout operation, first charges stored by first pixels of the image sensor are shifted in the first direction and second charges stored by second pixels of the image sensor are concurrently shifted in a second direction, the second direction being opposite to the first direction.

Abstract translation: 描述了一种使用连续移动物体操作图像传感器的方法。 在该方法中，可以在扩展时间照明脉冲期间执行定时延迟积分模式（TDI模式）操作。 在该TDI模式操作期间，图像传感器的像素存储的电荷仅在第一方向移动，并且跟踪图像运动。 值得注意的是，仅在非照明期间执行分离读出操作。 在该分离读出操作期间，图像传感器的第一像素存储的第一电荷在第一方向上移动，并且第二方向上的图像传感器的第二像素存储的第二电荷同时移位，第二方向与第一方向相反 方向。

公开(公告)号：US09077862B2

公开(公告)日：2015-07-07

申请号：US14058061

申请日：2013-10-18

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Chuang

IPC: H04N7/18 ,  G01N21/95 ,  H04N5/369 ,  G01N21/88 ,  G01N21/956 ,  H04N5/372

CPC classification number: H04N7/18 ,  G01N21/9501 ,  G01N2021/8887 ,  G01N2021/95676 ,  H04N5/3694 ,  H04N5/372

Abstract: An inspection system for inspecting a surface of a wafer/mask/reticle can include a modular array. The modular array can include a plurality of time delay integration (TDI) sensor modules, each TDI sensor module having a TDI sensor and a plurality of localized circuits for driving and processing the TDI sensor. At least one of the localized circuits can control a clock associated with the TDI sensor. At least one light pipe can be used to distribute a source illumination to the plurality of TDI sensor modules. The plurality of TDI sensor modules can be positioned capture a same inspection region or different inspection regions. The plurality of TDI sensor modules can be identical or provide for different integration stages. Spacing of the modules can be arranged to provide 100% coverage of the inspection region in one pass or for fractional coverage requiring two or more passes for complete coverage.

Abstract translation: 用于检查晶片/掩模/掩模版的表面的检查系统可以包括模块阵列。 模块化阵列可以包括多个时间延迟积分（TDI）传感器模块，每个TDI传感器模块具有TDI传感器和用于驱动和处理TDI传感器的多个局部电路。 至少一个局部电路可以控制与TDI传感器相关的时钟。 可以使用至少一个光管来将源照明分配给多个TDI传感器模块。 多个TDI传感器模块可以被定位成捕获相同的检查区域或不同的检查区域。 多个TDI传感器模块可以相同或提供不同的集成阶段。 可以设置模块的间隔，以便在一次通过中提供100％的检查区域覆盖，或者为了完全覆盖而需要两次或更多次通过的分数覆盖。

公开(公告)号：US20140217299A1

公开(公告)日：2014-08-07

申请号：US14242802

申请日：2014-04-01

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Richard W. Solarz ,  David R. Shafer ,  Bin-Ming Benjamin Tsai ,  David L. Brown

IPC: G01N21/95

CPC classification number: G01N21/95 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G01N2201/068 ,  G03F1/84 ,  G03F7/70616 ,  H05G2/008

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract translation: 对EUV图案化掩模，空白掩模和由EUV图案化掩模生成的图案化晶片的检查需要高倍率和在图像平面上的大视场。 EUV检查系统可以包括指向检查表面的光源，用于检测从被检查表面偏转的光的检测器和用于将来自被检查表面的光引导到检测器的光学配置。 特别地，检测器可以包括多个传感器模块。 另外，光学配置可以包括在小于5米长的光路内提供至少100倍的放大倍数的多个反射镜。 在一个实施例中，光路大约2-3米长。

公开(公告)号：US20140158864A1

公开(公告)日：2014-06-12

申请号：US14096911

申请日：2013-12-04

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Chuang ,  Yury Yuditsky

IPC: H04N3/14

CPC classification number: H04N5/3742 ,  G01N21/8851 ,  G01N2021/8896 ,  G01N2021/95676 ,  H04N5/2256 ,  H04N5/3743

Abstract: A method of operating an image sensor with a continuously moving object is described. In this method, a timed delay integration mode (TDI-mode) operation can be performed during an extended-time illumination pulse. During this TDI-mode operation, charges stored by pixels of the image sensor are shifted only in a first direction, and track the image motion. Notably, a split-readout operation is performed only during non-illumination. During this split-readout operation, first charges stored by first pixels of the image sensor are shifted in the first direction and second charges stored by second pixels of the image sensor are concurrently shifted in a second direction, the second direction being opposite to the first direction.

Abstract translation: 描述了一种使用连续移动物体操作图像传感器的方法。 在该方法中，可以在扩展时间照明脉冲期间执行定时延迟积分模式（TDI模式）操作。 在该TDI模式操作期间，图像传感器的像素存储的电荷仅在第一方向移动，并且跟踪图像运动。 值得注意的是，仅在非照明期间执行分离读出操作。 在该分离读出操作期间，图像传感器的第一像素存储的第一电荷在第一方向上移动，并且第二方向上的图像传感器的第二像素存储的第二电荷同时移位，第二方向与第一方向相反 方向。

公开(公告)号：US20140001370A1

公开(公告)日：2014-01-02

申请号：US14014142

申请日：2013-08-29

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Richard W. Solarz ,  David R. Shafer ,  Bin-Ming Benjamin Tsai ,  David L. Brown

IPC: G01N21/88

CPC classification number: G01N21/95 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G01N2201/068 ,  G03F1/84 ,  G03F7/70616 ,  H05G2/008

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

公开(公告)号：US20130264481A1

公开(公告)日：2013-10-10

申请号：US13792166

申请日：2013-03-10

Applicant: KLA-TENCOR CORPORATION

Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: H01L31/0216 ,  G01N21/88

CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

Abstract: An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

Abstract translation: 用于短波长光和带电粒子的图像传感器包括半导体膜，形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 该图像传感器具有高效率和良好的稳定性，即使在高通量下连续使用多年。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。 图像传感器可以包括在电子轰击的图像传感器和/或检查系统中。