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    High throughput hot testing method and system for high-brightness light-emitting diodes
    1.
    发明授权
    High throughput hot testing method and system for high-brightness light-emitting diodes 有权
    高亮度发光二极管的高通量热测试方法和系统

    公开(公告)号：US08927944B2

    公开(公告)日：2015-01-06

    申请号：US13673947

    申请日：2012-11-09

    Applicant: KLA-Tencor Corporation

    Inventor： Richard W. Solarz

    IPC: G01R31/44 ,  H05B33/10

    CPC classification number: G01R31/44 ,  G01N21/66 ,  G01N21/71 ,  H01L33/32 ,  H01L33/44 ,  H05B33/10

    Abstract: A method of performing a hot test of a wafer-level, packaged high-brightness phosphor converted light-emitting diode (pc-HBLED) includes selectively heating portions of the phosphor layer using a laser to provide a predetermined temperature gradient in the phosphor layer. The selective heating can directly heat the silicone in a silicone-based phosphor layer, or directly heat the active ion(s) of the phosphor in a Lumiramic™-based phosphor or even the active ion(s) of a silicone-based phosphor layer. A current is applied to the InGaN film to establish a predetermined temperature at the InGaN film junction, the film junction being adjacent to the phosphor layer. Photometric measurements are performed on the HBLED after the selective heating and during the applied electroluminescent current. This method quickly establishes the temperatures and temperature gradients in the HBLED consistent with those of an operating, product-level HBLED, thereby ensuring accurate binning of the HBLED.

    Abstract translation: 进行晶片级封装的高亮度荧光体转换发光二极管（pc-HBLED）的热测试的方法包括使用激光选择性地加热荧光体层的部分，以在荧光体层中提供预定的温度梯度。 选择性加热可以直接加热硅氧烷基荧光体层中的硅氧烷，或直接加热基于Lumiramic TM的荧光体中的荧光体的活性离子，或甚至加热硅氧烷基荧光体层的活性离子 。 对InGaN膜施加电流以在InGaN膜结处建立预定温度，膜结与磷光体层相邻。 在选择性加热和施加的电致发光电流之后，对HBLED进行光度测量。 该方法快速建立HBLED的温度和温度梯度与操作的产品级HBLED的温度和温度梯度一致，从而确保HBLED的准确分箱。

    Solid State Light Production Using Flexible Grouping Of LEDs
    3.
    发明申请
    Solid State Light Production Using Flexible Grouping Of LEDs 审中-公开
    使用柔性分组LED的固态光生产

    公开(公告)号：US20150194565A1

    公开(公告)日：2015-07-09

    申请号：US14589859

    申请日：2015-01-05

    Applicant: KLA-Tencor Corporation

    Inventor： Richard W. Solarz ,  David Oak

    IPC: H01L33/00 ,  B07C5/342

    CPC classification number: B07C5/342 ,  G01N21/66 ,  G01R31/2635

    Abstract: Solid state lighting devices (e.g., lamps and fixtures) are produced using unbinned/uncharacterized LEDs from an entire LED production “cloud” by way of sequentially measuring light emitted from the unbinned LEDs, and then assigning/placing each unbinned LED immediately into an associated LED product group (e.g., directly onto a PCB that forms part of the final lamp/fixture). The group assignment for each LED is based on how its measured light matches with other LEDs based on flexible group characteristics, which are generated in accordance with user-defined parameters, whereby each LED is placed in a product group such that light collectively generated by the LEDs of each product group complies with the user-defined parameters. The flexible group characteristics are also adjusted in real time (i.e., as batch-related characteristics of the LED “cloud” are acquired by way of the sequential testing), whereby the LED assignment process is modified for each LED batch.

    Abstract translation: 固态照明装置（例如灯具和固定装置）使用来自整个LED生产“云”的未测试/未表征的LED通过顺序地测量从未掺杂的LED发出的光，然后将每个未组装的LED立即分配/放置到相关联的 LED产品组（例如，直接连接到构成最终灯/灯具的一部分的PCB上）。 每个LED的组分配基于其测量的光如何与基于柔性组特性的其他LED匹配，其根据用户定义的参数生成，由此每个LED被放置在产品组中，使得由 每个产品组的LED符合用户定义的参数。 柔性组特性也被实时调整（即，通过顺序测试获得LED“云”的批量相关特性），由此为每个LED批次修改LED分配过程。

    EUV high throughput inspection system for defect detection on patterned EUV masks, mask blanks, and wafers
    6.
    发明授权
    EUV high throughput inspection system for defect detection on patterned EUV masks, mask blanks, and wafers 有权
    EUV高通量检测系统，用于在图案化的EUV掩模，掩模毛坯和晶片上进行缺陷检测

    公开(公告)号：US08692986B2

    公开(公告)日：2014-04-08

    申请号：US14014142

    申请日：2013-08-29

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Chuang ,  Richard W. Solarz ,  David R. Shafer ,  Bin-Ming Benjamin Tsai ,  David L. Brown

    IPC: G01N21/00

    CPC classification number: G01N21/95 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G01N2201/068 ,  G03F1/84 ,  G03F7/70616 ,  H05G2/008

    Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

    Abstract translation: 对EUV图案化掩模，空白掩模和由EUV图案化掩模生成的图案化晶片的检查需要高倍率和在图像平面上的大视场。 EUV检查系统可以包括指向检查表面的光源，用于检测从被检查表面偏转的光的检测器和用于将来自被检查表面的光引导到检测器的光学配置。 特别地，检测器可以包括多个传感器模块。 另外，光学配置可以包括在小于5米长的光路内提供至少100倍的放大倍数的多个反射镜。 在一个实施例中，光路大约2-3米长。

    High Throughput Hot Testing Method And System For High-Brightness Light-Emitting Diodes
    7.
    发明申请
    High Throughput Hot Testing Method And System For High-Brightness Light-Emitting Diodes 有权
    高亮度发光二极管高通量热测试方法和系统

    公开(公告)号：US20130119275A1

    公开(公告)日：2013-05-16

    申请号：US13673947

    申请日：2012-11-09

    Applicant: KLA-Tencor Corporation

    Inventor： Richard W. Solarz

    IPC: G01R31/44

    CPC classification number: G01R31/44 ,  G01N21/66 ,  G01N21/71 ,  H01L33/32 ,  H01L33/44 ,  H05B33/10

    Abstract: A method of performing a hot test of a wafer-level, packaged high-brightness phosphor converted light-emitting diode (pc-HBLED) includes selectively heating portions of the phosphor layer using a laser to provide a predetermined temperature gradient in the phosphor layer. The selective heating can directly heat the silicone in a silicone-based phosphor layer, or directly heat the active ion(s) of the phosphor in a Lumiramic™-based phosphor or even the active ion(s) of a silicone-based phosphor layer. A current is applied to the InGaN film to establish a predetermined temperature at the InGaN film junction, the film junction being adjacent to the phosphor layer. Photometric measurements are performed on the HBLED after the selective heating and during the applied electroluminescent current. This method quickly establishes the temperatures and temperature gradients in the HBLED consistent with those of an operating, product-level HBLED, thereby ensuring accurate binning of the HBLED.

    Abstract translation: 进行晶片级封装的高亮度荧光体转换发光二极管（pc-HBLED）的热测试的方法包括使用激光选择性地加热荧光体层的部分，以在荧光体层中提供预定的温度梯度。 选择性加热可以直接加热硅氧烷基荧光体层中的硅氧烷，或直接加热基于Lumiramic TM的荧光体中的荧光体的活性离子或者甚至基于硅氧烷的荧光体的活性离子 磷光体层。 对InGaN膜施加电流以在InGaN膜结处建立预定温度，膜结与磷光体层相邻。 在选择性加热和施加的电致发光电流之后，对HBLED进行光度测量。 该方法快速建立HBLED的温度和温度梯度与操作的产品级HBLED的温度和温度梯度一致，从而确保HBLED的准确分箱。

    High throughput hot testing method and system for high-brightness light-emitting diodes
    9.
    发明授权
    High throughput hot testing method and system for high-brightness light-emitting diodes 有权
    高亮度发光二极管的高通量热测试方法和系统

    公开(公告)号：US09519033B2

    公开(公告)日：2016-12-13

    申请号：US14589728

    申请日：2015-01-05

    Applicant: KLA-Tencor Corporation

    Inventor： Richard W. Solarz

    IPC: G01R31/44 ,  H05B33/10 ,  G01N21/66 ,  G01N21/71 ,  H01L33/32 ,  H01L33/44

    CPC classification number: G01R31/44 ,  G01N21/66 ,  G01N21/71 ,  H01L33/32 ,  H01L33/44 ,  H05B33/10

    Abstract: A method of performing a hot test of a packaged phosphor converted light-emitting diode (pc-LED) includes selectively heating portions of the phosphor layer using a laser to provide a predetermined temperature gradient in the phosphor layer. The selective heating can directly heat the silicone in a silicone-based phosphor layer, or directly heat the active ion(s) of the phosphor in a Lumiramic™-based phosphor or even the active ion(s) of a silicone-based phosphor layer. A current is applied to the InGaN film to establish a predetermined temperature at the InGaN film junction, the film junction being adjacent to the phosphor layer. Photometric measurements are performed on the LED after the selective heating and during the applied electroluminescent current. This method quickly establishes the temperatures and temperature gradients in the LED consistent with those of an operating, product-level LED, thereby ensuring accurate binning of the LED.

    Abstract translation: 包装的磷光体转换发光二极管（pc-LED）的热测试方法包括使用激光选择性地加热荧光体层的一部分，以在荧光体层中提供预定的温度梯度。 选择性加热可以直接加热硅氧烷基荧光体层中的硅氧烷，或直接加热基于Lumiramic TM的荧光体中的荧光体的活性离子，或甚至加热硅氧烷基荧光体层的活性离子 。 对InGaN膜施加电流以在InGaN膜结处建立预定温度，膜结与磷光体层相邻。 在选择性加热和施加的电致发光电流之后，对LED进行光度测量。 该方法快速地将LED的温度和温度梯度与操作的产品级LED的温度梯度相一致，从而确保了LED的精确的分级。

    SUB 200NM LASER PUMPED HOMONUCLEAR EXCIMER LASERS
    10.
    发明申请
    SUB 200NM LASER PUMPED HOMONUCLEAR EXCIMER LASERS 有权
    SUB 200NM激光泵浦红外激光激光器

    公开(公告)号：US20150168847A1

    公开(公告)日：2015-06-18

    申请号：US14571100

    申请日：2014-12-15

    Applicant: KLA-Tencor Corporation

    Inventor： Richard W. Solarz ,  llya Bezel ,  Anatoly Shchemelinin

    IPC: G03F7/20 ,  H01S3/094

    CPC classification number: H01S3/094 ,  H01S3/036 ,  H01S3/094042 ,  H01S3/094053 ,  H01S3/0941 ,  H01S3/2207 ,  H01S3/225

    Abstract: Disclosed are methods and apparatus for generating a sub-200 nm continuous wave (cw) laser. A laser apparatus includes a chamber for receiving at least a rare gas or rare gas mixtures and a pump laser source for generating at least one cw pump laser focused in the chamber for generating at least one laser-sustained plasma in the chamber. The laser apparatus further includes a system for forming an optical cavity in which the at least one laser-sustained plasma serves as an excitation source for producing at least one cw laser having a wavelength that is below about 200 nm. In one aspect, the at least one laser-sustained plasma has a shape that substantially matches a shape of the optical cavity.

    Abstract translation: 公开了用于产生亚200nm连续波（cw）激光的方法和装置。 激光装置包括用于至少接收稀有气体或稀有气体混合物的腔室和用于产生聚集在腔室中的至少一个cw泵激光器的泵激光源，用于在腔室中产生至少一个激光持续等离子体。 激光装置还包括用于形成光腔的系统，其中所述至少一个激光持续等离子体用作用于产生至少一个具有低于约200nm的波长的cw激光的激发源。 在一个方面，所述至少一个激光维持等离子体具有基本上与所述光腔的形状相匹配的形状。

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