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公开(公告)号：US20160290796A1
公开(公告)日：2016-10-06
申请号：US15090389
申请日：2016-04-04
Applicant: KLA-Tencor Corporation
Inventor： Ady Levy , Daniel Kandel , Michael E. Adel , Leonid Poslavsky , John Robinson , Tal Marciano , Barak Bringoltz , Tzahi Grunzweig , Dana Klein , Tal Itzkovich , Nadav Carmel , Nuriel Amir , Vidya Ramanathan , Janay Camp , Mark Wagner
CPC classification number: G01B11/272 , G01N21/211 , G01N21/31 , G01N21/41 , G01N21/4738 , G01N21/4788 , G01N21/6489 , G01N21/9501 , G01N2021/213 , G03F7/705 , G03F7/70525 , G03F7/70533 , G03F7/70616
Abstract: A metrology performance analysis system includes a metrology tool including one or more detectors and a controller communicatively coupled to the one or more detectors. The controller is configured to receive one or more metrology data sets associated with a metrology target from the metrology tool in which the one or more metrology data sets include one or more measured metrology metrics and the one or more measured metrology metrics indicate deviations from nominal values. The controller is further configured to determine relationships between the deviations from the nominal values and one or more selected semiconductor process variations, and determine one or more root causes of the deviations from the nominal values based on the relationships between values of the one or more metrology metrics and the one or more selected semiconductor process variations.
Abstract translation: 计量性能分析系统包括包括一个或多个检测器的计量工具和通信地耦合到所述一个或多个检测器的控制器。 所述控制器被配置为从所述计量工具接收与度量目标相关联的一个或多个度量数据集，其中所述一个或多个测量数据集包括一个或多个测量的度量度量，并且所述一个或多个测量的度量度量指示与标称值的偏差 。 控制器还被配置为确定与标称值和一个或多个所选择的半导体工艺变化的偏差之间的关系，并且基于一个或多个测量值的值之间的关系确定偏离标称值的一个或多个根本原因 度量和一个或多个所选择的半导体工艺变化。
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公开(公告)号：US20140199791A1
公开(公告)日：2014-07-17
申请号：US14083126
申请日：2013-11-18
Applicant: KLA-Tencor Corporation
Inventor： Allen Park , Ellis Chang , Michael Adel , Kris Bhaskar , Ady Levy , Amir Widmann , Mark Wagner , Songnian Rong
CPC classification number: H01L22/12 , G06F17/5081
Abstract: Universal target based inspection drive metrology includes designing a plurality of universal metrology targets measurable with an inspection tool and measurable with a metrology tool, identifying a plurality of inspectable features within at least one die of a wafer using design data, disposing the plurality of universal targets within the at least one die of the wafer, each universal target being disposed at least proximate to one of the identified inspectable features, inspecting a region containing one or more of the universal targets with an inspection tool, identifying one or more anomalistic universal targets in the inspected region with an inspection tool and, responsive to the identification of one or more anomalistic universal targets in the inspected region, performing one or more metrology processes on the one or more anomalistic universal metrology targets with the metrology tool.
Abstract translation: 通用的基于目标的检测驱动度量包括设计多个通过检测工具测量的通用度量目标并且可以用计量工具测量，使用设计数据识别晶片的至少一个管芯内的多个检查特征，将多个通用目标 在晶片的至少一个模具内，每个通用目标被设置为至少接近所识别的可检查特征之一，用检查工具检查包含一个或多个通用目标的区域，以识别一个或多个异常通用目标 检查区域具有检查工具，并且响应于在被检查区域中识别一个或多个异常通用目标，对所述一个或多个异常通用度量目标与计量工具执行一个或多个计量过程。
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公开(公告)号：US20180253017A1
公开(公告)日：2018-09-06
申请号：US15867485
申请日：2018-01-10
Applicant: KLA-Tencor Corporation
Inventor： Michael E. Adel , Amnon Manassen , William Pierson , Ady Levy , Pradeep Subrahmanyan , Liran Yerushalmi , DongSub Choi , Hoyoung Heo , Dror Alumot , John Charles Robinson
IPC: G03F7/20
CPC classification number: G03F7/70633 , G03F7/705 , G03F7/70508 , G03F7/7085
Abstract: A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample.
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公开(公告)号：US09903711B2
公开(公告)日：2018-02-27
申请号：US15090389
申请日：2016-04-04
Applicant: KLA-Tencor Corporation
Inventor： Ady Levy , Daniel Kandel , Michael E. Adel , Leonid Poslavsky , John Robinson , Tal Marciano , Barak Bringoltz , Tzahi Grunzweig , Dana Klein , Tal Itzkovich , Nadav Carmel , Nuriel Amir , Vidya Ramanathan , Janay Camp , Mark Wagner
IPC: G01B11/14 , G01B11/27 , G01N21/95 , G03F7/20 , G01N21/21 , G01N21/31 , G01N21/41 , G01N21/47 , G01N21/64
CPC classification number: G01B11/272 , G01N21/211 , G01N21/31 , G01N21/41 , G01N21/4738 , G01N21/4788 , G01N21/6489 , G01N21/9501 , G01N2021/213 , G03F7/705 , G03F7/70525 , G03F7/70533 , G03F7/70616
Abstract: A metrology performance analysis system includes a metrology tool including one or more detectors and a controller communicatively coupled to the one or more detectors. The controller is configured to receive one or more metrology data sets associated with a metrology target from the metrology tool in which the one or more metrology data sets include one or more measured metrology metrics and the one or more measured metrology metrics indicate deviations from nominal values. The controller is further configured to determine relationships between the deviations from the nominal values and one or more selected semiconductor process variations, and determine one or more root causes of the deviations from the nominal values based on the relationships between values of the one or more metrology metrics and the one or more selected semiconductor process variations.
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公开(公告)号：US09702693B2
公开(公告)日：2017-07-11
申请号：US15136855
申请日：2016-04-22
Applicant: KLA-Tencor Corporation
Inventor： Mark Ghinovker , Michael Adel , Walter D. Mieher , Ady Levy , Dan Wack
CPC classification number: G01B11/272 , G01N21/4785 , G01N21/9501 , G03F7/70633 , H01L21/68 , H01L21/682 , H01L23/544 , Y10S438/975
Abstract: A metrology system for determining overlay is disclosed. The system includes an optical assembly for capturing images of an overlay mark and a computer for analyzing the captured images to determine whether there is an overlay error. The mark comprises first and second regions that each include at least two separately generated working zones, juxtaposed relative to one another, configured to provide overlay information in a first direction, and include a periodic structure having coarsely segmented elements. The mark comprises third and fourth regions that each include at least two separately generated working zones, juxtaposed relative to one another, configured to provide overlay information in a second direction, and include a periodic structure having coarsely segmented elements. Working zones of the first and second regions are diagonally opposed and spatially offset relative to one another, and the working zones of the third and fourth regions are diagonally opposed and spatially offset relative to one another.
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Patent Agency Ranking
公开(公告)号：US09576861B2
公开(公告)日：2017-02-21
申请号：US14083126
申请日：2013-11-18
Applicant: KLA-Tencor Corporation
Inventor： Allen Park , Ellis Chang , Michael Adel , Kris Bhaskar , Ady Levy , Amir Widmann , Mark Wagner , Songnian Rong
CPC classification number: H01L22/12 , G06F17/5081
Abstract: Universal target based inspection drive metrology includes designing a plurality of universal metrology targets measurable with an inspection tool and measurable with a metrology tool, identifying a plurality of inspectable features within at least one die of a wafer using design data, disposing the plurality of universal targets within the at least one die of the wafer, each universal target being disposed at least proximate to one of the identified inspectable features, inspecting a region containing one or more of the universal targets with an inspection tool, identifying one or more anomalistic universal targets in the inspected region with an inspection tool and, responsive to the identification of one or more anomalistic universal targets in the inspected region, performing one or more metrology processes on the one or more anomalistic universal metrology targets with the metrology tool.
Abstract translation: 通用的基于目标的检测驱动度量包括设计多个通过检测工具测量的通用度量目标并且可以用计量工具测量，使用设计数据识别晶片的至少一个管芯内的多个检查特征，将多个通用目标 在晶片的至少一个模具内，每个通用目标被设置为至少接近所识别的可检查特征之一，用检查工具检查包含一个或多个通用目标的区域，以识别一个或多个异常通用目标 检查区域具有检查工具，并且响应于在被检查区域中识别一个或多个异常通用目标，对所述一个或多个异常通用度量目标与计量工具执行一个或多个计量过程。
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公开(公告)号：US20160313116A1
公开(公告)日：2016-10-27
申请号：US15136855
申请日：2016-04-22
Applicant: KLA-Tencor Corporation
Inventor： Mark Ghinovker , Michael Adel , Walter D. Mieher , Ady Levy , Dan Wack
IPC: G01B11/27
CPC classification number: G01B11/272 , G01N21/4785 , G01N21/9501 , G03F7/70633 , H01L21/68 , H01L21/682 , H01L23/544 , Y10S438/975
Abstract: A metrology system for determining overlay is disclosed. The system includes an optical assembly for capturing images of an overlay mark and a computer for analyzing the captured images to determine whether there is an overlay error. The mark comprises first and second regions that each include at least two separately generated working zones, juxtaposed relative to one another, configured to provide overlay information in a first direction, and include a periodic structure having coarsely segmented elements. The mark comprises third and fourth regions that each include at least two separately generated working zones, juxtaposed relative to one another, configured to provide overlay information in a second direction, and include a periodic structure having coarsely segmented elements. Working zones of the first and second regions are diagonally opposed and spatially offset relative to one another, and the working zones of the third and fourth regions are diagonally opposed and spatially offset relative to one another.
Abstract translation: 公开了一种用于确定覆盖层的计量系统。 该系统包括用于捕获覆盖标记的图像的光学组件和用于分析所捕获图像的计算机，以确定是否存在重叠错误。 标记包括第一和第二区域，每个区域包括至少两个单独生成的工作区域，其相对于彼此并置，被配置为在第一方向上提供覆盖信息，并且包括具有粗分段元素的周期性结构。 标记包括第三和第四区域，每个区域包括相对于彼此并置的至少两个单独生成的工作区域，其被配置为在第二方向上提供覆盖信息，并且包括具有粗分段元素的周期性结构。 第一区域和第二区域的工作区域相对于彼此对角地相对并且在空间上偏移，并且第三区域和第四区域的工作区域相对于彼此对角地相对并且在空间上偏移。
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18.发明申请System and Method for Field-By-Field Overlay Process Control Using Measured and Estimated Field Parameters 审中-公开使用测量和估计的场参数进行现场叠加过程控制的系统和方法公开(公告)号：US20150241790A1
公开(公告)日：2015-08-27
申请号：US14186744
申请日：2014-02-21
Applicant: KLA-Tencor Corporation
Inventor： Bill Pierson , Ramkumar Karur-Shanmugam , Chin-Chou Huang , Ady Levy , John Charles Robinson
IPC: G03F7/20
Abstract: The present disclosure is directed to a method of determining at least one correctable for a process tool. In an embodiment, the method includes the steps of: measuring one or more parameter values at one or more measurement locations of each field of a selection of measured fields of a wafer; estimating one or more parameter values for one or more locations of each field of a selection of unmeasured fields of the wafer; and determining at least one correctable for a process tool based upon the one or more parameter values measured at the one or more measurement locations of each field of the selection of measured fields of the wafer and the one or more parameter values estimated for the one or more locations of each field of the selection of unmeasured fields of the wafer.
Abstract translation: 本公开涉及一种确定至少一个可校正过程工具的方法。 在一个实施例中，该方法包括以下步骤：测量晶片的测量场的选择的每个场的一个或多个测量位置处的一个或多个参数值; 估计所述晶片的未测量场的选择的每个场的一个或多个位置的一个或多个参数值; 以及基于在晶片的测量场的选择的每个场的一个或多个测量位置处测量的一个或多个参数值以及针对所述晶片的所测量的一个或多个参数值估计的一个或多个参数值来确定至少一个可校正的处理工具 每个场的更多位置选择晶片的未测量场。
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公开(公告)号：US11164768B2
公开(公告)日：2021-11-02
申请号：US16019341
申请日：2018-06-26
Applicant: KLA-Tencor Corporation
Inventor： Pradeep Vukkadala , Mark D. Smith , Ady Levy , Prasanna Dighe , Dieter Mueller
Abstract: A controller is configured to perform at least a first characterization process prior to at least one discrete backside film deposition process on a semiconductor wafer; perform at least an additional characterization process following the at least one discrete backside film deposition process; determine at least one of a film force or one or more in-plane displacements for at least one discrete backside film deposited on the semiconductor wafer via the at least one discrete backside film deposition process based on the at least the first characterization process and the at least the additional characterization process; and provide at least one of the film force or the one or more in-plane displacements to at least one process tool via at least one of a feed forward loop or a feedback loop to improve performance of one or more fabrication processes.
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公开(公告)号：US10475712B2
公开(公告)日：2019-11-12
申请号：US15707927
申请日：2017-09-18
Applicant: KLA-Tencor Corporation
Inventor： Ady Levy , Mark D. Smith
Abstract: A system is disclosed. The system includes a tool cluster. The tool cluster includes a first deposition tool configured to deposit a first layer on a wafer. The tool cluster additionally includes an interferometer tool configured to obtain one or more measurements of the wafer. The tool cluster additionally includes a second deposition tool configured to deposit a second layer on the wafer. The tool cluster additionally includes a vacuum assembly. One or more correctables configured to adjust at least one of the first deposition tool or the second deposition tool are determined based on the one or more measurements. The one or more measurements are obtained between the deposition of the first layer and the deposition of the second layer without breaking the vacuum generated by the vacuum assembly.
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