公开(公告)号：US10764527B2

公开(公告)日：2020-09-01

申请号：US16397072

申请日：2019-04-29

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  Sharon Zamek ,  John Fielden ,  Devis Contarato ,  David L. Brown

IPC: H01L27/148 ,  H04N5/378 ,  H04N5/361 ,  G01N21/956 ,  G01N21/95 ,  G06T7/00 ,  H04N5/372

Abstract: A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

公开(公告)号：US20190313044A1

公开(公告)日：2019-10-10

申请号：US16439297

申请日：2019-06-12

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  Sharon Zamek ,  John Fielden ,  Devis Contarato ,  David L. Brown

IPC: H04N5/378 ,  G01N21/956 ,  H04N5/361 ,  H04N5/372 ,  G06T7/00 ,  H01L27/148 ,  G01N21/95

Abstract: A multiple-column-per-channel image CCD sensor utilizes a multiple-column-per-channel readout circuit including connected transfer gates that alternately transfer pixel data (charges) from a group of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at multiple times the line clock rate to pass the image charges to the shared output circuit. A symmetrical fork-shaped diffusion is utilized in one embodiment to merge the image charges from the group of related pixel columns. A method of driving the multiple-column-per-channel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the multiple-column-per-channel CCD sensor is also described.

公开(公告)号：US09860466B2

公开(公告)日：2018-01-02

申请号：US15153543

申请日：2016-05-12

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  David L. Brown ,  Jingjing Zhang ,  Keith Lyon ,  Mark Shi Wang

IPC: G01N21/00 ,  H04N5/3722 ,  G01N21/956

CPC classification number: H04N5/3722 ,  G01N21/956 ,  G01N2201/12

Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.

公开(公告)号：US20170295334A1

公开(公告)日：2017-10-12

申请号：US15337604

申请日：2016-10-28

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  Sharon Zamek ,  John Fielden ,  Devis Contarato ,  David L. Brown

IPC: H04N5/378 ,  G01N21/95 ,  H01L27/148 ,  H04N5/372 ,  G06T7/00

CPC classification number: H04N5/378 ,  G01N21/9501 ,  G06T7/0008 ,  G06T2207/30148 ,  H01L27/14812 ,  H01L27/14825 ,  H04N5/361 ,  H04N5/372

Abstract: A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

公开(公告)号：US20160334342A1

公开(公告)日：2016-11-17

申请号：US15153543

申请日：2016-05-12

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  David L. Brown ,  Jingjing Zhang ,  Keith Lyon ,  Mark Shi Wang

IPC: G01N21/95

CPC classification number: H04N5/3722 ,  G01N21/956 ,  G01N2201/12

Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.

Abstract translation: 通过对像素的电阻控制栅极的中心区域施加更多的负的控制电压，并对栅极的端部施加更多的正的控制电压来实现线性传感器中的像素孔径尺寸调整。 这些控制电压使得电阻控制栅极产生将在像素的感光区域的选定部分中产生的光电子驱动到用于后续测量的电荷累积区域中的电场，并驱动在像素的光敏区域的其他部分中产生的光电子 从电荷累积区域进行随后的丢弃或同时读出。 系统利用光学器件将从不同角度或不同位置接收的光引导到每个像素的光敏区域的相应不同部分。 选择性地启动多个孔径控制电极以收集/测量从窄范围或宽范围的角度或位置接收的光，从而实现快速的图像数据调整。

公开(公告)号：US08832611B2

公开(公告)日：2014-09-09

申请号：US13919577

申请日：2013-06-17

Applicant: KLA-Tencor Corporation

Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden ,  Bin-Ming Benjamin Tsai ,  Jingjing Zhang

IPC: G06F17/50 ,  G06F19/00 ,  G06F17/10

CPC classification number: G06F17/5018 ,  G03F7/70625 ,  G06F17/10 ,  G06F17/5081 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G06F2217/16 ,  H01L22/12 ,  H01L22/20

Abstract: Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.

Abstract translation: 提供了流程感知度量的系统和方法。 一种方法包括为用于在晶片上形成结构的一个或多个工艺步骤选择工艺参数的标称值和一个或多个不同值，模拟使用标称值在晶片上形成的结构的一个或多个特性， 以及基于所述结构的一个或多个特性如何在所述标称值和所述一个或多个不同值中的至少两个之间变化来确定所述光学模型的参数化。

公开(公告)号：US10778925B2

公开(公告)日：2020-09-15

申请号：US16439297

申请日：2019-06-12

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  Sharon Zamek ,  John Fielden ,  Devis Contarato ,  David L. Brown

IPC: H04N5/378 ,  G01N21/956 ,  H04N5/361 ,  H04N5/372 ,  H01L27/148 ,  G01N21/95 ,  G06T7/00

Abstract: A multiple-column-per-channel image CCD sensor utilizes a multiple-column-per-channel readout circuit including connected transfer gates that alternately transfer pixel data (charges) from a group of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at multiple times the line clock rate to pass the image charges to the shared output circuit. A symmetrical fork-shaped diffusion is utilized in one embodiment to merge the image charges from the group of related pixel columns. A method of driving the multiple-column-per-channel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the multiple-column-per-channel CCD sensor is also described.

公开(公告)号：US10194108B2

公开(公告)日：2019-01-29

申请号：US15806913

申请日：2017-11-08

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  David L. Brown ,  Jingjing Zhang ,  Keith Lyon ,  Mark Shi Wang

IPC: G01N21/00 ,  H04N5/3722 ,  G01N21/956

Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.

公开(公告)号：US09620547B2

公开(公告)日：2017-04-11

申请号：US15201028

申请日：2016-07-01

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  John Fielden

IPC: H01L27/146 ,  G01N21/95 ,  G01N21/88 ,  H01L27/148 ,  H01L31/107 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L27/14632 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2201/061 ,  G01N2201/0638 ,  G01N2201/12 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14681 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698 ,  H01L27/14825 ,  H01L27/14831 ,  H01L27/14856 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm−3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

公开(公告)号：US20150260659A1

公开(公告)日：2015-09-17

申请号：US14643148

申请日：2015-03-10

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  John Fielden

IPC: G01N21/95 ,  H01L27/146 ,  H01L31/18 ,  H01L31/107 ,  H01L31/028 ,  G01N21/88 ,  H01L27/148

CPC classification number: H01L27/14632 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2201/061 ,  G01N2201/0638 ,  G01N2201/12 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14681 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698 ,  H01L27/14825 ,  H01L27/14831 ,  H01L27/14856 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm−3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

Abstract translation: 高灵敏度图像传感器包括硅的外延层，其是固有的或轻掺杂的（例如掺杂水平小于约1013cm-3）。 CMOS或CCD电路制造在外延层的前侧。 外延p和n型层生长在外延层的背面。 在n型外延层上沉积纯硼层。 在硼沉积过程中，一些硼从背面被驱动到几nm的n型外延层中。 可以将抗反射涂层施加到纯硼层。 在传感器的操作期间，将数十至几百伏的负偏压施加到硼层，以加速光电子远离背面，并通过雪崩效应产生额外的电子。 接地的p阱可以根据需要从反向偏置的外延层保护有源电路。