Image Forming Apparatus
    11.
    发明申请
    Image Forming Apparatus 有权
    图像形成装置

    公开(公告)号:US20130084099A1

    公开(公告)日:2013-04-04

    申请号:US13628493

    申请日:2012-09-27

    IPC分类号: G03G15/00

    摘要: An image forming apparatus which may include an apparatus main body and a module unit. The module unit may include a communication member having an opening that allows communication between inside and outside of the module unit and a unit-side positioning portion located adjacent to the opening of the communication member. Further, the apparatus main body may include a ventilation member having an opening located so as to oppose the opening of the communication member. Further, the apparatus main body may include a main body-side positioning portion located adjacent to an opening of the ventilation member. Also, the apparatus main body may include an urging member that is configured to urge the module unit so as to bring the unit-side positioning portion into contact with the main body-side positioning portion.

    摘要翻译: 一种图像形成装置,其可以包括装置主体和模块单元。 模块单元可以包括具有开口的通信构件,该开口允许模块单元的内部和外部之间的连通以及邻近通信构件的开口定位的单元侧定位部。 此外,设备主体可以包括通风构件,其具有与通信构件的开口相对的开口。 此外,装置主体可以包括邻近通气构件的开口定位的主体侧定位部。 此外,装置主体可以包括推动构件,其被构造成推动模块单元以使单元侧定位部与主体侧定位部接触。

    METHOD FOR SEPARATING AN OPTICAL FILM BONDED TO AN ADHEREND WITH A PRESSURE-SENSITIVE ADHESIVE OPTICAL FILM
    12.
    发明申请
    METHOD FOR SEPARATING AN OPTICAL FILM BONDED TO AN ADHEREND WITH A PRESSURE-SENSITIVE ADHESIVE OPTICAL FILM 有权
    用压敏粘合光膜分离粘合剂粘合剂的光学膜的方法

    公开(公告)号:US20120261077A1

    公开(公告)日:2012-10-18

    申请号:US13538041

    申请日:2012-06-29

    IPC分类号: B32B38/10

    摘要: There is provided a method for separating an optical film bonded to an adherend with a pressure-sensitive adhesive layer interposed therebetween from the adherend. The pressure-sensitive adhesive layer is formed using an optical pressure-sensitive adhesive. The optical pressure-sensitive adhesive of the invention comprises a base polymer having a functional group (F); and a coupling agent that has a benzyl ester group and is represented by Formula (1): wherein A1 and A2 are different functional groups, one of A1 and A2 shows reactivity or interaction with the functional group (F) of the base polymer, R1 is an optionally substituted alkylene group of 1 to 12 carbon atoms and/or an optionally substituted phenylene group, and R2 and R3 are each a hydrogen atom or an alkyl group of 1 to 12 carbon atoms and may be the same or different.

    摘要翻译: 提供了一种从被粘物分离粘合到被粘物上的光学膜与其中夹在其间的压敏粘合剂层的方法。 使用光学压敏粘合剂形成压敏粘合剂层。 本发明的光学粘合剂包括具有官能团(F)的基础聚合物; 和具有苄基酯基并由式(1)表示的偶联剂:其中A1和A2是不同的官能团,A1和A2之一表示与基础聚合物的官能团(F)的反应性或相互作用,R1 是1〜12个碳原子的任选取代的亚烷基和/或任意取代的亚苯基,R 2和R 3各自为氢原子或碳原子数为1〜12的烷基,可以相同也可以不同。

    Demodulator and receiving device
    13.
    发明授权
    Demodulator and receiving device 失效
    解调器和接收装置

    公开(公告)号:US08270850B2

    公开(公告)日:2012-09-18

    申请号:US12621949

    申请日:2009-11-19

    IPC分类号: H04B10/06

    CPC分类号: H04B10/677

    摘要: A demodulator includes: a splitter that branches a differential phase shift keying optical signal into a first branched optical signal passing through a first optical path and a second branched optical signal passing through a second optical path; a multiplexer that multiplexes the first branched optical signal having passed through the first optical path and the second branched optical signal having passed through the second optical path and makes interference between the first branched optical signal and the second branched optical signal; and a double refraction medium that reduces difference between phase differences between each polarized wave between the first branched optical signal and the second branched optical signal multiplexed by the multiplexer.

    摘要翻译: 解调器包括:分离器,其将差分相移键控光信号分支成通过第一光路的第一分支光信号和通过第二光路的第二分支光信号; 复用多路复用器,其经过第一光路的第一分支光信号和穿过第二光路的第二分支光信号,并使第一分支光信号和第二分支光信号之间产生干涉; 以及双折射介质,其减小由所述多路复用器复用的所述第一分支光信号与所述第二分支光信号之间的每个极化波之间的相位差之间的差异。

    CONTROL APPARATUS
    14.
    发明申请
    CONTROL APPARATUS 有权
    控制装置

    公开(公告)号:US20120123634A1

    公开(公告)日:2012-05-17

    申请号:US13292413

    申请日:2011-11-09

    申请人: Takashi Shimizu

    发明人: Takashi Shimizu

    IPC分类号: G06F7/00

    CPC分类号: B60R21/0173

    摘要: A control apparatus for vehicles including a first vehicle compatible with an airbag-linked emergency and a second vehicle incompatible with the airbag-linked emergency is provided. The control apparatus includes: a receiver section for receiving an airbag signal from an airbag apparatus; an abnormality determination section for determining that the airbag apparatus is abnormal when the receiver section does not receive the airbag signal from the airbag apparatus; and a control section for activating the abnormality determination section when the control apparatus is mounted to the first vehicle, and for deactivating the abnormality determination section when the control apparatus is mounted to the second vehicle.

    摘要翻译: 提供一种用于车辆的控制装置,其包括与气囊连接的紧急情况兼容的第一车辆和与气囊连接的紧急情况不兼容的第二车辆。 控制装置包括:接收部,用于从气囊装置接收气囊信号; 异常判定部,其用于当所述接收部未从所述气囊装置接收到所述气囊信号时,判定为所述气囊装置异常; 以及控制部,其用于当所述控制装置安装到所述第一车辆时激活所述异常判定部,并且用于当所述控制装置安装到所述第二车辆时停止所述异常判定部。

    MANUFACTURING METHOD AND APPARATUS FOR SEMICONDUCTOR DEVICE
    15.
    发明申请
    MANUFACTURING METHOD AND APPARATUS FOR SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法和装置

    公开(公告)号:US20120052600A1

    公开(公告)日:2012-03-01

    申请号:US13217736

    申请日:2011-08-25

    摘要: A manufacturing method for a semiconductor device, comprising: performing first processing on a plurality of wafers in a first processing order in a first processing apparatus; obtaining a processed amount with respect to each of the plurality of wafers in the first processing; obtaining a processed amount with respect to each of the plurality of wafers by second processing in a second processing apparatus after the first processing; deciding a second processing order, which is different from the first processing order, from the processed amount with respect to each of the plurality of wafers by the first processing and the processed amount with respect to each of the plurality of wafers by the second processing; and performing the second processing on the plurality of wafers in the second processing order in the second processing apparatus.

    摘要翻译: 一种半导体器件的制造方法,包括:在第一处理装置中以第一处理顺序对多个晶片执行第一处理; 在所述第一处理中获得关于所述多个晶片中的每一个的处理量; 通过在第一处理之后的第二处理装置中的第二处理来获得关于多个晶片中的每一个的处理量; 通过所述第一处理,通过所述第一处理和相对于所述多个晶片中的每一个处理的量,通过所述第二处理来确定与所述第一处理顺序不同的第二处理顺序相对于所述多个晶片中的每一个的处理量; 以及在所述第二处理装置中以所述第二处理顺序对所述多个晶片执行所述第二处理。

    Semiconductor structure
    16.
    发明授权
    Semiconductor structure 有权
    半导体结构

    公开(公告)号:US08089117B2

    公开(公告)日:2012-01-03

    申请号:US12065901

    申请日:2006-08-22

    申请人: Takashi Shimizu

    发明人: Takashi Shimizu

    IPC分类号: H01L29/49

    摘要: A desired property for a metal gate electrode layer is that it can cover a three-dimensional semiconductor structure having a microstructure with high step coverage. Another desired property for the metal gate electrode layer is that the surface of a deposited electrode layer is flat on a nanometer scale, enables a dielectric layer for electrical insulation to be coated without performing special planization after deposition of the electrode layer. Furthermore, another desired property for the metal gate electrode layer is that it has the similar etching workability to materials used in an ordinary semiconductor manufacturing process. Furthermore, another desired property for the metal gate electrode layer is that it has a structure in which diffusion of impurity is suppressed due to homogeneity thereof and the absence of grain boundaries. It was found that an amorphous metal electrode is most suitable for realizing the metal gate electrode layer satisfying the above-mentioned properties and thereby the present invention was achieved.

    摘要翻译: 用于金属栅电极层的期​​望性质是其可以覆盖具有高阶覆盖的微结构的三维半导体结构。 用于金属栅极电极层的另一期望性质是沉积电极层的表面是纳米级的平坦的,能够在沉积电极层之后进行电绝缘的电介质层而不进行特殊的平面化。 此外,对于金属栅电极层的另一期望特性是它具有与在普通半导体制造工艺中使用的材料相似的蚀刻可加工性。 此外,用于金属栅电极层的另一期望性质是其具有由于其均匀性和不存在晶界而抑制杂质扩散的结构。 发现非晶金属电极最适于实现满足上述性能的金属栅电极层,从而实现了本发明。

    Semiconductor device and manufacturing method thereof

    公开(公告)号:US20110316095A1

    公开(公告)日:2011-12-29

    申请号:US13137650

    申请日:2011-08-31

    申请人: Takashi Shimizu

    发明人: Takashi Shimizu

    IPC分类号: H01L29/772

    摘要: A semiconductor device includes a silicon substrate, an SiO film, and a High-K film. The SiO film is first formed on the silicon substrate and then subjected to a nitridation process to obtain an SiON film from the SiO film. The nitridation process is performed such that nitrogen concentration in the SiO film decreases from an interface with the silicon substrate below and an interface with the High-K film above, and nitrogen having predetermined concentration or more is introduced in a thickness within a range of 0.2 nm to 1 nm from the interface with the silicon substrate. The SiON film is etched up to a depth to which nitrogen of the predetermined concentration or more is introduced. The High-K film is then formed on the SiON film.

    Semiconductor device and method of fabricating the same
    18.
    发明授权
    Semiconductor device and method of fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号:US07989896B2

    公开(公告)日:2011-08-02

    申请号:US12612238

    申请日:2009-11-04

    IPC分类号: H01L27/11

    摘要: A method of fabricating a semiconductor device according to one embodiment includes: laying out a first region, a second region, a third region and a fourth region on a semiconductor substrate by forming an element isolation region in the semiconductor substrate; forming a first insulating film on the first region and the second region; forming a first semiconductor film on the first insulating film; forming a second insulating film and an aluminum oxide film thereon on the fourth region after forming of the first semiconductor film; forming a third insulating film and a lanthanum oxide film thereon on the third region after forming of the first semiconductor film; forming a high dielectric constant film on the aluminum oxide film and the lanthanum oxide film; forming a metal film on the high dielectric constant film; forming a second semiconductor film on the first semiconductor film and the metal film; and patterning the first insulating film, the first semiconductor film, the second insulating film, the aluminum oxide film, the third insulating film, the lanthanum oxide film, the high dielectric constant film, the metal film and the second semiconductor film.

    摘要翻译: 根据一个实施例的制造半导体器件的方法包括:通过在半导体衬底中形成元件隔离区,在半导体衬底上铺设第一区域,第二区域,第三区域和第四区域; 在所述第一区域和所述第二区域上形成第一绝缘膜; 在所述第一绝缘膜上形成第一半导体膜; 在形成第一半导体膜之后的第四区域上形成第二绝缘膜和氧化铝膜; 在形成第一半导体膜之后,在第三区域上形成第三绝缘膜和氧化镧膜; 在氧化铝膜和氧化镧膜上形成高介电常数膜; 在高介电常数膜上形成金属膜; 在所述第一半导体膜和所述金属膜上形成第二半导体膜; 以及图案化第一绝缘膜,第一半导体膜,第二绝缘膜,氧化铝膜,第三绝缘膜,氧化镧膜,高介电常数膜,金属膜和第二半导体膜。

    Optical switch and control method of optical switch, and control method of MEMS device
    19.
    发明授权
    Optical switch and control method of optical switch, and control method of MEMS device 有权
    光开关的光开关和控制方法以及MEMS器件的控制方法

    公开(公告)号:US07961993B2

    公开(公告)日:2011-06-14

    申请号:US12292278

    申请日:2008-11-14

    IPC分类号: G02B6/26 G02B26/08

    摘要: A control section of an optical switch calculates information relating to a polarization amount in an insulating film at each predetermined time, to update the information relating to the polarization amount in the insulating film. On the other hand, when a drive voltage is applied to a MEMS mirror, an initial value of the drive voltage corresponding to an input setting command is read out from an initial value memory, and also, the information relating to the polarization amount in the insulating film is read out from the polarization amount memory, and the initial value of the drive voltage is corrected according to the read information relating to the polarization amount in the insulating film, to thereby set a new drive voltage, and the new drive voltage is applied on electrodes of the MEMS mirror.

    摘要翻译: 光开关的控制部分在每个预定时间计算与绝缘膜中的极化量相关的信息,以更新与绝缘膜中的极化量有关的信息。 另一方面,当向MEMS反射镜施加驱动电压时,从初始值存储器读出对应于输入设定指令的驱动电压的初始值,并且还将与 从极化量存储器读出绝缘膜,根据与绝缘膜中的极化量相关的读取信息来校正驱动电压的初始值,从而设定新的驱动电压,新的驱动电压为 施加在MEMS反射镜的电极上。

    Optical member and backlight using the same
    20.
    发明申请
    Optical member and backlight using the same 审中-公开
    光学构件和背光使用相同

    公开(公告)号:US20110110117A1

    公开(公告)日:2011-05-12

    申请号:US10590872

    申请日:2005-02-24

    IPC分类号: F21V8/00 G02B1/10 G09F13/04

    摘要: There is provided a light diffusive plate and a light guide plate, in which the generation of deflection, a cause of defective imaging, can be prevented.On both surfaces and/or end surfaces of a light diffusive plate 1 made of synthetic resin, a moisture proof layer 2 made of a material having lower vapor permeability than that of the light diffusive plate 1 is formed to produce a light diffusive plate 3. On both surfaces and/or end surfaces of a light guide plate 1 made of synthetic resin, which has at least on end as a light incident surface and a surface almost orthogonal with it as a light emergent surface, a moisture proof layer 2 made of a material having lower vapor permeability than that of the light guide plate 1 is formed to produce a light guide plate 3.

    摘要翻译: 提供了一种光漫射板和导光板,其中可以防止产生偏转,导致成像不良的原因。 在由合成树脂制成的光漫射板1的两个表面和/或端面上形成由透光率低于光漫射板1的材料制成的防潮层2,以产生光扩散板3。 在由合成树脂制成的导光板1的至少一端作为光入射面的表面和/或表面几乎与其作为光出射表面几乎正交的两面和/或端面上,形成防潮层2 形成透光率低于导光板1的材料,以制造导光板3。