摘要:
After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
摘要:
A light generating apparatus includes: a submount; a semiconductor laser chip mounted on the submount; a substrate which is mounted on the submount and includes an optical waveguide; and a substance having a predetermined thickness which is disposed between the semiconductor laser chip and the substrate. In an oscillation wavelength stabilizing apparatus for a light source, the light source is a semiconductor laser which includes: an active region for providing gain; and a distributed Bragg reflection (DBR) region for controlling an oscillation wavelength. The apparatus includes a control section which monotonously varies, in a first direction, a DBR current to be input to the DBR region while detecting the oscillation wavelength of an output light of the semiconductor laser so as to detect a DBR current value Io corresponding to a predetermined wavelength value, and then monotonously varies the DBR current in a second direction which is opposite the first direction beyond the detected value Io, and then monotonously varies the DBR current in the first direction again to set the DBR current at the detected value Io, thereby fixing the oscillation wavelength of the semiconductor laser chip at the predetermined wavelength value.
摘要:
After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
摘要:
A wavelength-variable semiconductor laser includes: a submount; and a semiconductor laser chip being mounted onto the submount and having at least an active layer region and a distributed Bragg reflection region, wherein the semiconductor laser chip is mounted onto the submount in such a manner that an epitaxial growth surface thereof faces the submount and a heat transfer condition of the active layer region is different from a heat transfer condition of the distributed Bragg reflection region. Moreover, an optical integrated device includes at least a semiconductor laser and an optical waveguide device both mounted on a submount, wherein the semiconductor laser is the wavelength-variable semiconductor laser as set forth above.
摘要:
A short-wavelength light generating apparatus comprising a pumping semiconductor laser and an intra-cavity solid state laser, the intra-cavity solid state laser is excited in response to a laser light beam from the semiconductor laser to generate a short-wavelength light beam to an external. Also included in the apparatus is an external grating mirror having on its one surface a reflection type diffraction grating and placed between the semiconductor laser and the intra-cavity solid state laser. The external grating mirror reflects the laser light beam from the semiconductor laser to feedback a portion of the laser light beam to said semiconductor laser so that an oscillated wavelength of the semiconductor laser becomes within a wavelength acceptance of the intra-cavity solid state laser. Further, the external grating mirror supplies a portion of the laser light beam from the semiconductor laser to the intra-cavity solid state laser. This arrangement can output a stable harmonic wave with a high efficiency.
摘要:
After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a nonlinear optical effect, a highly reliable element is provided.
摘要:
An optical pickup and an optical information recording/reproducing device are provided, each of which is capable of forming a super-resolution spot to conduct micro-mark recording, and does not undergo signal degradation due to an increased sidelobe in a reproducing operation. A variable phase filter having three regions to produce a phase difference in a radial direction is used, to provide a phase difference of π between the center region and the side regions in a recording operation, so that a super-resolution spot is formed on a recording layer of the optical disk. In a reproducing operation, a phase difference is nullified between the regions of the variable phase filter, so that a normal light spot at a diffraction limit having a smaller sidelobe is formed. The variable phase filter can be formed with a homogeneous-alignment liquid crystal element.
摘要:
An optical waveguide device is provided that can reduce external interference noise. The optical waveguide device includes a substrate, an optical waveguide formed on the substrate, a periodic polarization inversion region formed on the optical waveguide, and an optical thin film formed in a portion of the optical waveguide. The optical waveguide (refractive index: N2) and the optical thin film (refractive index: N1) differ in refractive index dispersion, and the magnitude relationship between the refractive indexes is reversed depending on wavelength. The relationship N1>N2 is established for light having a shorter wavelength, while the relationship N2>N1 is established for light having a longer wavelength.
摘要:
The present invention aims to simplify a mass production process of an optical waveguide device and to reduce cost as well as noise. The optical waveguide device includes an optical waveguide whose entrance end face and exit end face are substantially parallel to each other. A SHG device is mass-produced by optically polishing an optical material substrate with a large area and then cutting the substrate. This method can mass-produce the optical waveguide devices having a uniform device length. The angle between the exit end face of the optical waveguide and the direction of an optical axis of the optical waveguide at the exit end face is not 90°, thereby reducing return light from the exit end face.
摘要:
A laser beam as fundamental waves which is emitted from a distribution Bragg reflection (DBR) semiconductor laser is incident on an optical waveguide of a light wavelength conversion device in which domain-inverted regions and the optical waveguide are formed in an LiTaO.sub.3 substrate. The wavelength of the incident laser beam is then converted so as to obtain higher harmonic waves such as blue light. In the conversion, a drive current to be applied to a DBR portion of the DBR semiconductor laser is changed so as to change an oscillating wavelength of the DBR semiconductor laser, thereby matching the oscillating wavelength with a phase-matched wavelength of the light wavelength conversion device. Thus, the generation of the harmonic waves to be output is stably controlled.