公开(公告)号：US5136602A

公开(公告)日：1992-08-04

申请号：US587686

申请日：1990-09-25

申请人： Mitsuru Sugawara

发明人： Mitsuru Sugawara

IPC分类号： G02F3/02 ,  G02F1/015 ,  G02F1/017 ,  H01L31/0352 ,  H01S5/00

CPC分类号： B82Y20/00 ,  G02F1/017 ,  H01L31/035236 ,  G02F1/01708 ,  G02F2001/0157 ,  G02F2001/01766

摘要： An InP p-n diode having an MQW consisting of an InP barrier layer and an In.sub.1-x Ga.sub.x As well layer as an active layer. An optical modulating diode in which a composition of a value 0.44 which is smaller than the x value 0.47 at which lattices are matched is selected so as to cause compressive strain in the well layer, and an optical bistable diode in which a composition of a value 0.55 which is greater than 0.47 is selected so as to cause tensile strain in the well layer.

公开(公告)号：US5113283A

公开(公告)日：1992-05-12

申请号：US435943

申请日：1989-11-13

申请人： Mitsuru Sugawara

发明人： Mitsuru Sugawara

IPC分类号： G02F1/015 ,  G02F1/017 ,  G02F1/025 ,  H01S3/10

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F1/025 ,  G02F2001/0155

摘要： An optical intensity modulator includes a compound semiconductor substrate of a first conductivity type having first and second surfaces, and a compound semiconductor active layer of the first conductivity type formed on the first surface of the compound semiconductor substrate. An incident laser beam to be intensity-modulated is applied to the compound semiconductor active layer. The modulator further includes a compound semiconductor layer of the first conductivity type formed on the compound semiconductor active layer, an opposite conductivity type compound semiconductor layer of a second conductivity type opposite to the first conductivity type, a first electrode formed on the opposite conductivity type compound semiconductor layer, and a second electrode formed on the second surface of the compound semiconductor substrate.

公开(公告)号：US08427013B2

公开(公告)日：2013-04-23

申请号：US12832290

申请日：2010-07-08

申请人： Masatoshi Watanabe ,  Mitsuru Sugawara

发明人： Masatoshi Watanabe ,  Mitsuru Sugawara

IPC分类号： H01H31/10 ,  H01H33/59 ,  H01H47/00 ,  H01H85/46 ,  H01H19/14

CPC分类号： G05F1/56 ,  H02J7/0072 ,  Y10T307/76

摘要： According to one embodiment, a power supply circuit includes a power switch section, an error amplifier, a wiring and a reset switch section. The error amplifier has one input portion connected to the output terminal, the other input portion and an output portion. The error amplifier outputs the control potential via the output portion to make the resistance of the power switch section high so that potential applied to the one input portion is high to potential applied to the other input portion. The wiring connects a reference terminal to the other input portion. In addition, the reset switch section is configured to isolate the wiring from a baseline potential when the input terminal is supplied with a potential, and to connect the wiring to the baseline potential when the input terminal is not supplied with the potential.

摘要翻译： 根据一个实施例，电源电路包括电源开关部分，误差放大器，布线和复位开关部分。 误差放大器具有连接到输出端子，另一个输入部分和输出部分的一个输入部分。 误差放大器通过输出部分输出控制电位，使电源开关部分的电阻变高，使得施加到一个输入部分的电位高到施加到另一个输入部分的电位。 接线将参考端子连接到另一个输入部分。 此外，复位开关部分被配置为当输入端被提供电位时将布线与基线电位隔离，并且当输入端未被提供电位时，将布线连接到基准电位。

公开(公告)号：US08391805B2

公开(公告)日：2013-03-05

申请号：US13052473

申请日：2011-03-21

申请人： Toshifumi Ishimori ,  Toshiki Seshita ,  Mitsuru Sugawara

发明人： Toshifumi Ishimori ,  Toshiki Seshita ,  Mitsuru Sugawara

IPC分类号： H04B1/44

CPC分类号： H03K17/687 ,  H03K17/063 ,  H03K17/162 ,  H03K17/693 ,  H03K2217/0036 ,  H03K2217/0054 ,  H04B1/48

摘要： According to one embodiment, a semiconductor switch circuit includes a switch section, a decoder section, a DC-DC converter, a driver section, a first filter circuit, a first filter bypass circuit and a first bypass control circuit. The switch section includes an input-output terminal, radio frequency signal terminals, and semiconductor switch elements. The decoder section generates a switch control signal controlling a conduction and a non-conduction state of switch elements. The DC-DC converter generates a first potential. The driver section supplies the first and a second potential to a gate electrode of the switch elements. The first filter circuit is electrically connected between the DC-DC converter and the driver section and outputs the first potential to the driver section. The first filter bypass circuit is electrically connected with the first filter circuit. The first bypass control circuit supplies a first mode signal to the first filter bypass circuit.

摘要翻译： 根据一个实施例，半导体开关电路包括开关部分，解码器部分，DC-DC转换器，驱动器部分，第一滤波器电路，第一滤波器旁路电路和第一旁路控制电路。 开关部分包括输入输出端子，射频信号端子和半导体开关元件。 解码器部分产生控制开关元件的导通和非导通状态的开关控制信号。 DC-DC转换器产生第一电位。 驱动器部分将第一和第二电位提供给开关元件的栅电极。 第一滤波器电路电连接在DC-DC转换器和驱动器部分之间，并将第一电位输出到驱动器部分。 第一滤波器旁路电路与第一滤波器电路电连接。 第一旁路控制电路向第一滤波器旁路电路提供第一模式信号。

公开(公告)号：US20120068757A1

公开(公告)日：2012-03-22

申请号：US13046934

申请日：2011-03-14

申请人： Toshiki Seshita ,  Mitsuru Sugawara

发明人： Toshiki Seshita ,  Mitsuru Sugawara

IPC分类号： H03K17/687 ,  H03K17/56

CPC分类号： H03K17/693 ,  H03K3/356104 ,  H03K17/102 ,  H03K2217/0054

摘要： According to one embodiment, a semiconductor switch includes a power supply circuit, a control circuit and a switch circuit. The power supply circuit includes an internal potential generator connected to a power supply, and a first transistor connected between an input and an output of the internal potential generator. The internal potential generator generates a first potential higher than an input potential. The first transistor is turned on when the first potential becomes lower than the input potential and has a threshold voltage being set so as to keep the first potential not lower than the input potential. The control circuit is configured to receive the first potential to output a high-level or low-level control signal. The switch circuit is configured to receive an input of the control signal to switch connection between terminals.

摘要翻译： 根据一个实施例，半导体开关包括电源电路，控制电路和开关电路。 电源电路包括连接到电源的内部电位发生器和连接在内部电位发生器的输入和输出端之间的第一晶体管。 内部电位发生器产生高于输入电位的第一电位。 当第一电位变得低于输入电位时，第一晶体管导通，并且设置阈值电压以使第一电位不低于输入电位。 控制电路被配置为接收第一电位以输出高电平或低电平控制信号。 开关电路被配置为接收控制信号的输入以切换端子之间的连接。

公开(公告)号：US07449415B2

公开(公告)日：2008-11-11

申请号：US11078349

申请日：2005-03-14

申请人： Toshinobu Hirayama ,  Toshiro Yamada ,  Tatsuya Sugimoto ,  Mitsuru Sugawara

发明人： Toshinobu Hirayama ,  Toshiro Yamada ,  Tatsuya Sugimoto ,  Mitsuru Sugawara

IPC分类号： B01D15/00

CPC分类号： H01L21/32137 ,  C07C17/208 ,  C07C17/38 ,  C07C17/383 ,  C07C17/389 ,  C07C23/08 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3127

摘要： A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.

摘要翻译： 用于等离子体反应的高纯度气体，其基于用于等离子体反应的气体的总体积具有至少99.9体积％的八氟环戊烯纯度，其中氮气和氧气的总含量作为余量的微量气体成分 ，不大于200ppm（体积）。 这种用于等离子体反应的高纯度气体可以通过以下方法制备：（1）在0组的惰性气体中蒸馏粗制八氟环戊烯的方法，或（2）将粗制八氟环戊烷蒸馏至99.9体积％以上的纯度的方法， 然后除去杂质余量。

公开(公告)号：US07341764B2

公开(公告)日：2008-03-11

申请号：US10493225

申请日：2002-10-31

申请人： Mitsuru Sugawara ,  Toshiro Yamada ,  Tatsuya Sugimoto ,  Kimiaki Tanaka

发明人： Mitsuru Sugawara ,  Toshiro Yamada ,  Tatsuya Sugimoto ,  Kimiaki Tanaka

IPC分类号： C08J5/18 ,  C08J7/18

CPC分类号： C07C21/22 ,  C07C17/25 ,  C23C16/26 ,  C23C16/30 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116

摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

摘要翻译： 一种用于等离子体反应的气体，包括具有5或6个碳原子的链状全氟炔烃，优选全氟-2-戊炔。 这种等离子体反应气体适用于形成精细图案的干蚀刻，用于形成薄膜的等离子体CVD和等离子体灰化。 通过使二氢氟烷烃化合物或单氢氟烯烃化合物与碱性化合物接触来合成等离子体反应气体。

公开(公告)号：US07081983B2

公开(公告)日：2006-07-25

申请号：US11023369

申请日：2004-12-29

申请人： Tomoyuki Akiyama ,  Nobuaki Hatori ,  Mitsuru Sugawara

发明人： Tomoyuki Akiyama ,  Nobuaki Hatori ,  Mitsuru Sugawara

IPC分类号： G02F1/35 ,  G02F1/39

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  G02F1/3556 ,  H01S3/169

摘要： A wavelength conversion device including a nonlinear medium having quantum dots uses a tunable laser as an excitation light source of optical four wave mixing, and performs wavelength conversion for a wide bandwidth signal light with optical four wave mixing by employing a control apparatus for controlling an optical system including an optical path of a signal light and an optical system including an optical path of an excitation light in correspondence with a wavelength of a signal light that is to be wavelength converted.

摘要翻译： 包括具有量子点的非线性介质的波长转换装置使用可调谐激光器作为光学四波混频的激发光源，并且通过采用用于控制光学的光学控制装置对光学四波混频进行宽带宽信号光的波长转换 系统包括信号光的光路和包括与待波长转换的信号光的波长对应的激发光的光路的光学系统。

公开(公告)号：US07015498B2

公开(公告)日：2006-03-21

申请号：US10662819

申请日：2003-09-16

申请人： Hiroji Ebe ,  Yoshiaki Nakata ,  Mitsuru Sugawara ,  Takashi Kita ,  Osamu Wada ,  Yasuhiko Arakawa

发明人： Hiroji Ebe ,  Yoshiaki Nakata ,  Mitsuru Sugawara ,  Takashi Kita ,  Osamu Wada ,  Yasuhiko Arakawa

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： B82Y10/00 ,  B82Y20/00 ,  H01L29/127 ,  H01L33/06 ,  H01L33/30 ,  H01S5/3201 ,  H01S5/3412 ,  H01S5/5009 ,  Y10S438/962

摘要： A quantum semiconductor device including quantum dots formed by S-K growth process taking place in a heteroepitaxial system wherein the relationship between the energy level of light holes and the energy level of heavy holes in the valence band is changed by optimizing the in-plane strain and the vertical strain accumulated in a quantum dot.

摘要翻译： 一种量子半导体器件，其包括通过在异质外延系统中发生的SK生长过程形成的量子点，其中通过优化面内应变来改变光空穴的能级与价带中的重孔的能级之间的关系， 在量子点中积累的垂直应变。

公开(公告)号：US06983108B2

公开(公告)日：2006-01-03

申请号：US09978637

申请日：2001-10-18

申请人： Mitsuru Sugawara ,  Takashi Yano ,  Kyosuke Dobashi ,  Katsumi Kusama ,  Sadao Tanikoshi ,  Kazuhiko Ide ,  Mitsuru Otani ,  Masayuki Takami ,  Mototaka Kitajima

发明人： Mitsuru Sugawara ,  Takashi Yano ,  Kyosuke Dobashi ,  Katsumi Kusama ,  Sadao Tanikoshi ,  Kazuhiko Ide ,  Mitsuru Otani ,  Masayuki Takami ,  Mototaka Kitajima

IPC分类号： H04J14/00

CPC分类号： H04J14/0294 ,  H04J14/0204 ,  H04J14/0205 ,  H04J14/0206 ,  H04J14/0212 ,  H04J14/0216 ,  H04J14/0219 ,  H04J14/0283 ,  H04J14/0291 ,  H04Q11/0005 ,  H04Q2011/0081

摘要： Optical signals inputted to input ports are split in half by 1×2 optical splitters respectively and the resulting signals are inputted to the input terminals of an optical matrix switch. The optical matrix switch switches between the routes of the individual optical signals and outputs the signal at any of the output ports. This enables the optical signal from the same input port to be outputted at two different output ports, which makes it possible to effect “bridge” at the time of protection switching.