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公开(公告)号：US07449415B2
公开(公告)日：2008-11-11
申请号：US11078349
申请日：2005-03-14
IPC分类号： B01D15/00
CPC分类号： H01L21/32137 , C07C17/208 , C07C17/38 , C07C17/383 , C07C17/389 , C07C23/08 , H01L21/0212 , H01L21/02274 , H01L21/31116 , H01L21/31138 , H01L21/3127
摘要： A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.
摘要翻译： 用于等离子体反应的高纯度气体，其基于用于等离子体反应的气体的总体积具有至少99.9体积％的八氟环戊烯纯度，其中氮气和氧气的总含量作为余量的微量气体成分 ，不大于200ppm（体积）。 这种用于等离子体反应的高纯度气体可以通过以下方法制备：（1）在0组的惰性气体中蒸馏粗制八氟环戊烯的方法，或（2）将粗制八氟环戊烷蒸馏至99.9体积％以上的纯度的方法， 然后除去杂质余量。
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公开(公告)号：US20050178731A1
公开(公告)日：2005-08-18
申请号：US11078349
申请日：2005-03-14
IPC分类号： H01L21/302 , C07C17/20 , C07C17/38 , C07C17/383 , C07C17/389 , C07C23/08 , H01L21/205 , H01L21/3065 , H01L21/311 , H01L21/312 , H01L21/3213 , B01D15/00
CPC分类号： H01L21/32137 , C07C17/208 , C07C17/38 , C07C17/383 , C07C17/389 , C07C23/08 , H01L21/0212 , H01L21/02274 , H01L21/31116 , H01L21/31138 , H01L21/3127
摘要： A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluoro-cyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.
摘要翻译： 用于等离子体反应的高纯度气体，其基于用于等离子体反应的气体的总体积具有至少99.9体积％的八氟环戊烯纯度，其中氮气和氧气的总含量作为余量的微量气体成分 ，不大于200ppm（体积）。 这种用于等离子体反应的高纯度气体可以通过以下方法制备：（1）在第0组的惰性气体中蒸馏粗制八氟环戊烯的方法，或（2）将粗制八氟环戊烷蒸馏至99.9％以上的纯度的方法， 体积，然后除去杂质余量。
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公开(公告)号：US06884365B1
公开(公告)日：2005-04-26
申请号：US09979508
申请日：2000-05-24
IPC分类号： H01L21/302 , C07C17/20 , C07C17/38 , C07C17/383 , C07C17/389 , C07C23/08 , H01L21/205 , H01L21/3065 , H01L21/311 , H01L21/312 , H01L21/3213 , C09K13/00 , C09K13/06
CPC分类号： H01L21/32137 , C07C17/208 , C07C17/38 , C07C17/383 , C07C17/389 , C07C23/08 , H01L21/0212 , H01L21/02274 , H01L21/31116 , H01L21/31138 , H01L21/3127
摘要： A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.
摘要翻译： 用于等离子体反应的高纯度气体，其基于用于等离子体反应的气体的总体积具有至少99.9体积％的八氟环戊烯纯度，其中氮气和氧气的总含量作为余量的微量气体成分 ，不大于200ppm（体积）。 这种用于等离子体反应的高纯度气体可以通过以下方法制备：（1）在0组的惰性气体中蒸馏粗制八氟环戊烯的方法，或（2）将粗制八氟环戊烷蒸馏至99.9体积％以上的纯度的方法， 然后除去杂质余量。
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公开(公告)号：US07341764B2
公开(公告)日：2008-03-11
申请号：US10493225
申请日：2002-10-31
CPC分类号： C07C21/22 , C07C17/25 , C23C16/26 , C23C16/30 , C23F4/00 , H01L21/3065 , H01L21/31116
摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.
摘要翻译： 一种用于等离子体反应的气体，包括具有5或6个碳原子的链状全氟炔烃，优选全氟-2-戊炔。 这种等离子体反应气体适用于形成精细图案的干蚀刻，用于形成薄膜的等离子体CVD和等离子体灰化。 通过使二氢氟烷烃化合物或单氢氟烯烃化合物与碱性化合物接触来合成等离子体反应气体。
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5.发明授权公开(公告)号：US07652179B2
公开(公告)日：2010-01-26
申请号：US12007522
申请日：2008-01-11
IPC分类号： C07C21/22
CPC分类号： C07C21/22 , C07C17/25 , C23C16/26 , C23C16/30 , C23F4/00 , H01L21/3065 , H01L21/31116
摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.
摘要翻译： 一种用于等离子体反应的气体，包括具有5或6个碳原子的链状全氟炔烃，优选全氟-2-戊炔。 这种等离子体反应气体适用于形成精细图案的干蚀刻，用于形成薄膜的等离子体CVD和等离子体灰化。 通过使二氢氟烷烃化合物或单氢氟烯烃化合物与碱性化合物接触来合成等离子体反应气体。
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6.发明申请公开(公告)号：US20080139855A1
公开(公告)日：2008-06-12
申请号：US12007522
申请日：2008-01-11
IPC分类号： C07C21/22
CPC分类号： C07C21/22 , C07C17/25 , C23C16/26 , C23C16/30 , C23F4/00 , H01L21/3065 , H01L21/31116
摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.
摘要翻译： 一种用于等离子体反应的气体，包括具有5或6个碳原子的链状全氟炔烃，优选全氟-2-戊炔。 这种等离子体反应气体适用于形成精细图案的干蚀刻，用于形成薄膜的等离子体CVD和等离子体灰化。 通过使二氢氟烷烃化合物或单氢氟烯烃化合物与碱性化合物接触来合成等离子体反应气体。
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公开(公告)号：US20050092240A1
公开(公告)日：2005-05-05
申请号：US10493225
申请日：2002-10-31
IPC分类号： H01L25/00 , C07C17/25 , C07C21/22 , C23C16/00 , H01L21/3065 , H01L21/311
CPC分类号： C07C21/22 , C07C17/25 , C23C16/26 , C23C16/30 , C23F4/00 , H01L21/3065 , H01L21/31116
摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.
摘要翻译： 一种用于等离子体反应的气体，包括具有5或6个碳原子的链状全氟炔烃，优选全氟-2-戊炔。 这种等离子体反应气体适用于形成精细图案的干蚀刻，用于形成薄膜的等离子体CVD和等离子体灰化。 通过使二氢氟烷烃化合物或单氢氟烯烃化合物与碱性化合物接触来合成等离子体反应气体。
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公开(公告)号：US06211420B1
公开(公告)日：2001-04-03
申请号：US09180627
申请日：1998-11-13
申请人： Akira Sekiya , Toshiro Yamada , Mitsuru Sugawara
发明人： Akira Sekiya , Toshiro Yamada , Mitsuru Sugawara
IPC分类号： C07C1720
CPC分类号： C07C23/08 , C07C17/206 , C07C17/208 , C07C17/383
摘要： In a process for preparing a fluorinated olefin having a carbon—carbon double bond, the carbon atoms of which have a fluorine atom, by reacting a halogenated olefin having at least one carbon—carbon double bond, a carbon atom or the carbon atoms of which bond have a chlorine atom or atoms bound thereto, and, in which the carbon atom or atoms with a single bond in the molecule have no halogen atom other than a fluorine atom, with an alkali metal fluoride, said reaction of the halogenated olefin with the alkali metal fluoride is conducted in the presence of an organic halogen-containing compound having a carbon—carbon single bond, a carbon or the carbons of which have at least one halogen atom other than fluorine atom.
摘要翻译： 在通过使具有至少一个碳 - 碳双键的卤代烯烃，碳原子或碳原子的碳原子与碳原子一起形成碳原子的碳 - 碳双键的氟代烯烃的方法中，其碳原子具有氟原子 键具有与其结合的氯原子或原子，并且其中分子中具有单键的碳原子或原子不具有氟原子的卤素原子与碱金属氟化物反应，卤代烯烃与 碱金属氟化物在具有碳 - 碳单键的有机含卤素化合物，碳或碳具有至少一个除氟原子以外的卤素原子的存在下进行。
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公开(公告)号：US20080073640A1
公开(公告)日：2008-03-27
申请号：US11798627
申请日：2007-05-15
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01L21/02395 , H01L21/02463 , H01L21/02491 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L21/02658 , H01L21/02664 , H01L29/66977 , H01L33/06 , H01S5/305 , H01S5/3054 , H01S5/3412 , H01S2304/04
摘要： The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming quantum dots 16; the step of etching the surfaces of the quantum dots 16 with an As raw material gas to thereby remove an InSb layer 18 containing Sb deposited on the surfaces of the quantum dots 16; and growing a capping layer 22 on the quantum dots 16 with the InSb layer 18 removed.
摘要翻译： 制造半导体器件的方法包括通过自组装生长在基底层10上形成量子点16的步骤; 在形成量子点16之前或阶段中将Sb或GaSb照射到基底层10的表面的步骤; 用As原料气体蚀刻量子点16的表面，从而除去沉积在量子点16的表面上的含有Sb的InSb层18; 并且在去除了InSb层18的量子点16上生长封盖层22。
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公开(公告)号：US20050117200A1
公开(公告)日：2005-06-02
申请号：US11023369
申请日：2004-12-29
IPC分类号： G02B6/26
CPC分类号： B82Y20/00 , B82Y10/00 , G02F1/3556 , H01S3/169
摘要： A wavelength conversion device including a nonlinear medium having quantum dots uses a tunable laser as an excitation light source of optical four wave mixing, and performs wavelength conversion for a wide bandwidth signal light with optical four wave mixing by employing a control apparatus for controlling an optical system including an optical path of a signal light and an optical system including an optical path of an excitation light in correspondence with a wavelength of a signal light that is to be wavelength converted.
摘要翻译： 包括具有量子点的非线性介质的波长转换装置使用可调谐激光器作为光学四波混频的激发光源，并且通过采用用于控制光学四极波的控制装置对于具有光学四波混频的宽带宽信号光进行波长转换 系统包括信号光的光路和包括与待波长转换的信号光的波长对应的激发光的光路的光学系统。
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