摘要:
An image processor comprising a control unit, wherein the control unit includes an obtaining unit that obtains image data generated as a result of reading a document by a reader in which a predetermined document reading condition is set; a selecting unit that allows a user to select an use of the image data obtained by the obtaining unit out of a plurality of the uses set in advance; a processing unit that processes the image data obtained by the obtaining unit according to an image processing condition suitable for the use selected by the selecting unit; and a transferring unit that transfers the image data after being processed by the processing unit to an application suitable for the use selected by the selecting unit.
摘要:
In a solid-state image sensor device, the efficiency of light collection to a light-receiving region of a photodiode PD through a microlens is enhanced by arranging a wiring line configuration. Each of the first metal layer and the second metal layer is arranged to have a ring-like portion formed along a profile of the light-receiving region of the photodiode PD in a fashion that an upper position over the photodiode PD is surrounded by the first and second metal layers and a third metal layer.
摘要:
A multi junction photovoltaic device and an integrated multi junction photovoltaic device, having a two-terminal structure, in which subsequent layers can be stacked under conditions with minimal restrictions imposed by previously stacked layers. Also, processes for producing these photovoltaic devices. A plurality of photovoltaic cells having different spectral sensitivity levels are stacked such that at least the photovoltaic cells (2, 4) at the light-incident end and the opposite end have a conductive thin-film layer (5a, 5d) as the outermost layer that undergoes connection, the remaining photovoltaic cell (3) has conductive thin-film layers (5b, 5c) as the outermost layers that undergo connection, and the outermost layers are bonded via anisotropic conductive adhesive layers (6a, 6b) containing conductive microparticles within a transparent insulating material. The conductive microparticles in the anisotropic conductive adhesive layers (6a, 6b) electrically connect the layers in the stacking direction, and the conductive thin film layers (5a, 5b, 5c, 5d) electrically connect the photovoltaic layers (2, 3, 4) that function as bonding materials in the lateral direction (in-plane direction).
摘要:
Objects are to reduce the burden on an operator and to improve fabrication efficiency. A transparent conductive film or a transparent optical film formed on a substrate W is irradiated with line illumination light by means of a line illumination device 3, line reflected light reflected at the transparent conductive film or the transparent optical film is detected with a camera, a color evaluation value of the detected reflected light is measured, and a film thickness corresponding to the measured color evaluation value is obtained using a film-thickness characteristic in which the color evaluation value is associated with the film thickness.
摘要:
The ultraviolet ray sensor measures the intensity of ultraviolet rays irradiated to the ultraviolet ray receiving surface. The CPU performs control to measure ultraviolet intensity in a case in which the ultraviolet ray receiving surface of the ultraviolet ray sensor faces in a predetermined direction.
摘要:
A thin-film inspection apparatus includes a storage section (14) that stores at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum that are affected by a variation in the film thickness of at least one of a first transparent thin film and a second transparent thin film are each associated with the film thickness of the first transparent thin film and the film thickness of the second transparent thin film; a light irradiation section (11) that irradiates an inspection-target substrate (S) with white light through a transparent glass substrate; a light receiving section (12) that receives reflected light reflected from the inspection-target substrate (S); and an arithmetic section (15) that obtains measurement values of the feature values stored in the storage section (14) from a spectral reflectance spectrum generated based on the received reflected light and that calculates the film thickness of each of the first transparent thin film and the second transparent thin film by using the obtained measurement values of the feature values and the feature-value characteristics stored in the storage section (14).
摘要:
An object is to improve production efficiency as well as reducing the burden on an operator. Light is radiated on a crystalline silicon film used for a thin-film silicon device, reflection light reflected by the crystalline silicon film is detected, a parameter of the luminance of the detected reflection light is measured, and film quality evaluation of the crystalline silicon film is performed in accordance with whether the parameter of the luminance is within a predetermined proper range or not.
摘要:
After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).
摘要:
A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of oxide film and uniformity in thickness of the oxide film.
摘要:
An object of the present invention is to provide a photovoltaic device and a process for producing such a photovoltaic device that enable a stable, high photovoltaic conversion efficiency to be achieved by using a transparent electrode having an optimal relationship between the resistivity and the transmittance. At least one transparent electrode (12, 16) is either a ZnO layer containing no Ga or a Ga-doped ZnO layer in which the quantity of added Ga is not more than 5 atomic % relative to the Zn within the ZnO layer, and the ZnO layer is formed by a sputtering method using a rare gas containing added oxygen as the sputtering gas, wherein the quantity of oxygen added to the sputtering gas is not less than 0.1% by volume and not more than 5% by volume relative to the combined volume of the oxygen and the rare gas.